TWI565021B - 連接器總成及其製造方法 - Google Patents
連接器總成及其製造方法 Download PDFInfo
- Publication number
- TWI565021B TWI565021B TW100121479A TW100121479A TWI565021B TW I565021 B TWI565021 B TW I565021B TW 100121479 A TW100121479 A TW 100121479A TW 100121479 A TW100121479 A TW 100121479A TW I565021 B TWI565021 B TW I565021B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrically insulating
- insulating material
- electrical connector
- connector assembly
- connector
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32235—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32238—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
- H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/37611—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
- H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
- H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
- H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
- H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40105—Connecting bonding areas at different heights
- H01L2224/40106—Connecting bonding areas at different heights the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/40227—Connecting the strap to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
- H01L2224/4101—Structure
- H01L2224/4103—Connectors having different sizes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
- H01L2224/4105—Shape
- H01L2224/41051—Connectors having different shapes
- H01L2224/41052—Different loop heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49112—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/85423—Magnesium (Mg) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85447—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
Description
本發明一般而言係關於電子器件,且更特定言之係關於連接器總成。
在過去,半導體工業在一保護結構(例如,諸如一模製化合物)內製造包括一單一半導體晶粒之半導體組件。各種類型之半導體組件係安裝至含有容許該等半導體組件彼此通信之互連結構之一印刷電路板。隨著對於電子裝置之更多功能性之需求之增加,其變得期望在印刷電路板上包含更多半導體組件。因此,半導體製造商已努力製造具有更小輪廓及安裝覆蓋區之半導體組件。
在一些實施例中,半導體晶粒以附接至該半導體晶粒之黏著劑材料之一插入層垂直堆疊於彼此之頂部上以將晶粒接合在一起以形成一多晶片或多晶粒結構。該多晶片結構係附接至一玻璃環氧類型印刷電路板基板或其他類似基板。接著該半導體晶粒線接合至該基板以在該基板與該半導體晶粒之間形成電互連。此一封裝組態之一實例係揭示於在2003年11月18日頒予Thomas B.Glenn等人之美國專利第6,650,019號中。具有經堆疊積體電路晶粒之一電子總成之另一實例係揭示於在2006年4月18日頒予Todd P.Oman之美國專利第7,030,317號中。
關於堆疊半導體晶粒之缺點包含在半導體晶粒之間形成電互連及移除來自該經堆疊結構之熱。
因此,具有適於在半導體晶粒與半導體組件之間傳輸電信號且提供來自半導體晶粒之充足熱消散之一連接器總成係有利的。其將進一步有利於具有成本及時間效應而實施該電子總成及方法。
在一實施例中,一種連接器總成包括具有第一端與第二端及第一表面與第二表面之一第一電連接器;及在該第一端處的該第一表面上的一第一電絕緣材料。
在另一實施例中,一種用於製造一連接器總成之方法,包括提供具有第一表面與第二表面及第一端與第二端之一電連接器;及在該第一端處的該第一表面之一部分上形成一電絕緣材料。
從結合附圖閱讀以下詳細描述將更好地理解本發明,其中相同參考符號指明相同元件。
一般而言,本發明提供一種連接器總成及一種用於製造該連接器總成之方法。根據本發明之實施例,一連接器總成包括具有相對表面及相對端之一電連接器。一中心區域係在該等相對端之間。一電絕緣材料係形成於該電連接器之該等端之一者中的一表面上。或者,電絕緣材料可形成於該第一端及該第二端中的相對表面上。
圖1係根據本發明之一實施例之一連接器總成400之一側視圖。圖1中展示具有相對表面404及406、端區域或部分408及412及一中心區域或部分410之一矩形形狀電連接器
402。舉例而言,電連接器402包括銅。用於電連接器402之其他合適材料包含鋁、錫、鋼、塗覆有貴金屬之一金屬夾子、銅合金、鈹、金、銀、鋁合金、黃銅、黃銅合金或類似物。電連接器402可自(例如)具有從約150微米(μm)至約250微米之一厚度範圍之一銅片蝕刻或切割。
在端區域412中的表面404上形成具有從約50微米至約100微米之一厚度範圍之一電絕緣材料414之一層。電絕緣材料414可為氧化鋁、氮化物、一熱絕緣材料、陶瓷或類似物。或者,可將端區域412中的表面404進行陽極氧化。
圖2係根據本發明之另一實施例之一連接器總成416之一側視圖。連接器總成416類似於連接器總成400,但是包含形成於端區域412中的表面406上的一電絕緣材料418之一層。電絕緣材料418可與電絕緣材料414相同或其可不同於電絕緣材料414。或者,可陽極氧化端區域412中的表面404及406。
圖3係根據本發明之另一實施例之一連接器總成420之一截面圖。圖3中展示具有相對表面424及426、端區域或部分428及432及一中心區域或部分430之一基板422。基板422較佳地係由一樹脂(諸如環氧、聚醯亞胺、三嗪,或酚醛樹脂、雙馬來醯亞胺三嗪(BT)樹脂、環氧玻璃複合物)、印刷電路板(PCB)材料、FR-4、陶瓷或類似物形成。或者,基板422可由彎曲板材料或一選擇性陽極氧化A1基板組成。在基板422中形成一導電互連層434。形成一導電接觸件436以與端區域428中的互連層434之一部分接觸且
形成一導電接觸件438以與端區域432中的互連層434之一部分接觸。導電接觸件436及438可藉由使用平版印刷技術、網板印刷、至端區域428及432中的互連層434之部分上的沈積或類似物圖案化傳導箔而形成。
儘管連接器總成420展示為分別具有端區域428及432中的導電接觸件436及438,但是此不為本發明之一限制。或者,端區域432可能不存在導電接觸件438或端區域428可能不存在導電接觸件436。
圖4係根據本發明之另一實施例之一連接器總成440之一側視圖。圖4中展示具有相對表面444及446、端區域或部分448及452及一中心區域或部分450之一矩形形狀電連接器442。舉例而言,電連接器442包括銅。用於電連接器442之其他合適材料包含鋁、錫、鋼、塗覆有貴金屬之一金屬夾子、銅合金、鈹、金、銀、鋁合金、黃銅、黃銅合金或類似物。電連接器442可自(例如)具有從約150微米至約200微米之一厚度範圍之一銅片蝕刻或切割及衝鍛或壓印使得端區域448係在由虛線456所識別之一水平面中且端區域452係在由虛線458所識別之一水平面中。由虛線456及458所識別之水平面較佳地係在一垂直方向上彼此隔開。
在端區域452中的表面446之一部分上形成具有從約50微米至約100微米之一厚度範圍之一電絕緣材料454之一層。或者,可在大體上端區域452中的表面446之所有部分上形成電絕緣材料454之層。電絕緣材料454可為氧化鋁、氮化
物、一熱絕緣材料、陶瓷或類似物。或者,可陽極氧化區域452中的表面446。
圖5係圖4中所展示之連接器總成440之一實施例之一俯視圖。圖5中展示具有表面444及藉由中心區域450而彼此連接之端區域448及452之電連接器442。一凹口460自端區域452之一端延伸至端區域452中,凹口460延伸至其中之電連接器442之部分可稱為一主體區域。端區域448與中心區域450交會之區域係藉由虛線462所識別且端區域450與端區域452交會之區域係藉由虛線464所識別。
應注意,凹口460為任選且可能不存在於電連接器440。
圖6至圖8繪示根據本發明之另一實施例之一連接器總成470。圖6及圖7係連接器總成470之等角視圖及圖8係連接器總成470之一側視圖。為了簡潔起見,將一起描述圖6至圖8。圖6至圖8中展示包括具有相對表面474及476、端區域或部分478及482及一中心區域或部分480之一電連接器472之連接器總成470。舉例而言,電連接器472包括銅。用於電連接器472之其他合適材料包含鋁、錫、鋼、塗覆有貴金屬之一金屬夾子、銅合金、鈹、金、銀、鋁合金、黃銅、黃銅合金或類似物。電連接器472可自(例如)具有從約150微米(μm)至約200微米之一厚度範圍之一銅片蝕刻或切割及衝鍛或壓印使得端區域478係在由虛線486所識別之一水平面中且端區域482係在由虛線488所識別之一水平面中。虛線486及488所定位之水平面較佳地係在一垂直方向上彼此隔開。
中心區域480包括藉由一中心子區域492連接在一起之端子區域490及494。子區域490之一端496交會端區域478且子區域490之一端498交會中心子區域492之一端500。中心子區域492之一端502交會子區域494之一端504且子區域494之一端506交會端區域482之一端508。中心子區域492係在藉由虛線510所識別之一水平面中。較佳地,虛線488所定位之水平面係在虛線486及510所定位之水平面之間且與虛線486及510所定位之水平面垂直隔開,亦即,端區域482係在虛線486及510所定位之水平面之間且與虛線486及510所定位之水平面垂直隔開之一水平面中。
在端區域482中的表面474之一部分上形成具有從約50微米至約100微米之一厚度範圍之一電絕緣材料512之一層。或者,可在大體上端區域482中的表面474之所有部分上形成電絕緣材料512之層。電絕緣材料512可為氧化鋁、氮化物、一熱絕緣材料、陶瓷或類似物。或者,可不存在電絕緣層512且可將端區域482中的表面474之一部分或整個表面474進行陽極氧化。
一凹口514延伸至端區域482中。凹口514延伸至其中之電連接器472之部分可稱為一主體區域。
圖9係不存在凹口514之一連接器總成470A之一等角視圖。已對參考符號470附加參考符號「A」以區別具有一凹口之一連接器總成與不具有一凹口之一連接器總成。
圖10係在端區域482中的表面474上形成電絕緣材料512A之一層之一連接器總成470A之一等角視圖。或者,圖9及
圖10中所示之連接器總成470A不存在電絕緣材料512之層且可將端區域482中的表面474進行陽極氧化。
圖11及圖12係根據本發明之另一實施例之包括一電連接器522之一連接器總成520之等角視圖。電連接器522具有相對表面524及526、端區域或部分528及532及一中心區域或部分530且包括鋁。將端區域532中的表面526進行陽極氧化以形成具有從約50微米至約100微米之一厚度範圍之氧化鋁層534。應注意,可將端區域532中的表面526之一部分或大體上端區域532中的整個表面526進行陽極氧化。
圖13係根據本發明之另一實施例之一連接器總成550之一等角視圖。圖13中展示包括具有相對表面474及476、端區域或部分478及482及一中心區域或部分480之一電連接器472之連接器總成550。參照圖6至圖8已描述電連接器472。
在端區域482中的表面476上形成具有從約50微米至100微米之一厚度範圍之一電絕緣材料552之一層。電絕緣材料552可為氧化鋁、氮化物、一熱絕緣材料、陶瓷或類似物。或者,可將端區域482中的表面474進行陽極氧化。根據電連接器472為鋁之實施例,陽極氧化表面474自表面474形成氧化鋁。
一電連接器472A係耦合至電絕緣層552以形成連接器總成550。更特定言之,端區域482中的表面474。已對參考符號472附加參考符號「A」以區別形成連接器總成550之兩個電連接器。堆疊於彼此上以形成一連接器總成之電連
接器472之數量不為本發明之一限制。
如今,應瞭解,已提供一種連接器總成及一種用於製造該連接器總成之方法。根據本發明之實施例,該連接器總成包括具有相對端及相對表面之一電連接器。一電絕緣材料可形成於該電連接器之一端或兩端中之一表面或兩個表面之部分上。該連接器總成可用於形成具有經堆疊半導體晶粒之半導體組件。該連接器總成容許堆疊半導體晶粒,藉此減小一印刷電路板上之覆蓋區且容許有效率地移除來自半導體組件之熱。
儘管已在本文中揭示特定實施例,但是不意欲將本發明限於所揭示之實施例。熟習此項技術者將認知,在不脫離本發明之精神之情況下,可作修改及變更。本發明意欲包含如落入附加申請專利範圍之範疇內之所有此等修改及變更。
400‧‧‧連接器總成
402‧‧‧電連接器
404‧‧‧表面
406‧‧‧表面
408‧‧‧端區域/部分
410‧‧‧中心區域/部分
412‧‧‧端區域/部分
414‧‧‧電絕緣材料
416‧‧‧連接器總成
418‧‧‧電絕緣材料
420‧‧‧連接器總成
422‧‧‧基板
424‧‧‧表面
426‧‧‧表面
428‧‧‧端區域/部分
430‧‧‧中心區域/部分
432‧‧‧端區域/部分
434‧‧‧導電互連層
436‧‧‧導電接觸件
438‧‧‧導電接觸件
440‧‧‧連接器總成
444‧‧‧表面
446‧‧‧表面
448‧‧‧端區域/部分
450‧‧‧中心區域/部分
452‧‧‧端區域/部分
454‧‧‧電絕緣材料
456‧‧‧虛線
458‧‧‧虛線
460‧‧‧凹口
462‧‧‧虛線
464‧‧‧虛線
470‧‧‧連接器總成
470A‧‧‧連接器總成
472‧‧‧電連接器
472A‧‧‧電連接器
474‧‧‧表面
476‧‧‧表面
478‧‧‧端區域/部分
480‧‧‧中心區域/部分
482‧‧‧端區域/部分
486‧‧‧虛線
488‧‧‧虛線
490‧‧‧端子區域
492‧‧‧中心子區域
494‧‧‧端子區域
496‧‧‧端
498‧‧‧端
500‧‧‧端
502‧‧‧端
504‧‧‧端
506‧‧‧端
508‧‧‧端
510‧‧‧虛線
512‧‧‧電絕緣材料
514‧‧‧凹口
520‧‧‧連接器總成
522‧‧‧電連接器
524‧‧‧表面
526‧‧‧表面
528‧‧‧端區域/部分
530‧‧‧中心區域/部分
532‧‧‧端區域/部分
534‧‧‧氧化鋁層
550‧‧‧連接器總成
552‧‧‧電絕緣材料
圖1係根據本發明之實施例之一連接器總成之一部分之一側視圖;圖2係根據本發明之實施例之一連接器總成之一部分之一側視圖;圖3係根據本發明之實施例之一連接器總成之一部分之一截面圖;圖4係根據本發明之實施例之一連接器總成之一部分之一側視圖;圖5係圖4之連接器總成之部分之一俯視圖;
圖6係根據本發明之實施例之連接器總成之一等角視圖;圖7係在相對於圖6中所示之定向之一顛倒定向中的圖6之連接器總成之一等角視圖;圖8係圖6及圖7之連接器總成之一側視圖;圖9係根據本發明之實施例之連接器總成之一等角視圖;圖10係在相對於圖9中所示之定向之一顛倒定向中的圖9之連接器總成之一等角視圖;圖11係根據本發明之實施例之連接器總成之一等角視圖;圖12係在相對於圖11中所示之定向之一顛倒定向中的圖11之連接器總成之一等角視圖;及圖13係根據本發明之實施例之一連接器總成之一等角視圖。
470‧‧‧連接器總成
472‧‧‧電連接器
478‧‧‧端區域/部分
480‧‧‧中心區域/部分
482‧‧‧端區域/部分
496‧‧‧端
500‧‧‧端
506‧‧‧端
508‧‧‧端
512‧‧‧電絕緣材料
514‧‧‧凹口
Claims (10)
- 一種連接器總成,其包括:一第一電連接器,其具有第一端與第二端及第一表面與第二表面;及一第一電絕緣材料,其在該第一端處位於該第一表面上,其中該第一電絕緣材料為自電絕緣材料群組選擇之一電絕緣材料,該電絕緣材料群組包括陶瓷、氮化物及一金屬基氧化物(metallic base oxide)。
- 如請求項1之連接器總成,其中該第一電連接器包括一導電材料。
- 如請求項1之連接器總成,其中該第一電絕緣材料為自電絕緣材料群組選擇之一電絕緣材料,該電絕緣材料群組包括陶瓷、一金屬基氧化物、氮化物及一導熱材料。
- 如請求項1之連接器總成,其進一步包含在該第一端處位於該第二表面上的一第二電絕緣材料。
- 如請求項1之連接器總成,其中該第一電連接器具有第一區段、第二區段及第三區段,該第一區段藉由該第二區段耦合至該第三區段,且其中該第一區段係在一第一水平面中且該第三區段係在一第二水平面中。
- 如請求項5之連接器總成,其中該第二區段包括:第一子區段、第二子區段及第三子區段,該第一子區段藉由該第二子區段耦合至該第三子區段,該第二子區段係在一第三水平面中,該第三水平面垂直地介於該第一水平面與該第二水平面之間。
- 如請求項1之連接器總成,其中該第一電連接器具有第一區段、第二區段及第三區段,該第一區段藉由該第二區段耦合至該第三區段,且其中該第三區段為平坦的,具有一主體部分、一端及自該端延伸至該主體部分中的一凹口,且進一步包括一第二電連接器,該第二電連接器耦合至在該第一電連接器處位於該第一端之該第一表面上的該第一電絕緣材料。
- 一種用於製造一連接器總成之方法,其包括:提供具有第一表面與第二表面及第一端與第二端之一電連接器;及在該第一端處位於該第一表面之一部分上形成一電絕緣材料,其中該電絕緣材料為自電絕緣材料群組選擇之一電絕緣材料,該電絕緣材料群組包括陶瓷、氮化物及金屬基氧化物(metallic base oxide)。
- 一種用於製造一連接器總成之方法,該方法包括:提供具有第一表面與第二表面及第一端與第二端之一第一電連接器,其中提供該第一電連接器包含形成該第一電連接器以具有在一第一水平面中之該第一端及在一第二水平面中之該第二端;及在該第一端處位於該第一表面之一部份上形成一電絕緣材料,其中該電絕緣材料為自電絕緣材料群組選擇之一電絕緣材料,該電絕緣材料群組包括陶瓷、氮化物及氧化物。
- 如請求項9之方法,其中提供該第一電連接器包含形成 該第一電連接器以具有在該第一端與該第二端之間之一中心區域,其中該中心區域包含位於一第三水平面中的一部分,該第三水平面在該第一水平面與該第二水平面之間,且進一步包含將一第二電連接器耦合至在該第一電連接器之該第一端處位於該第一表面之該部分上的該電絕緣材料。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2010004311A MY166609A (en) | 2010-09-15 | 2010-09-15 | Connector assembly and method of manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201222757A TW201222757A (en) | 2012-06-01 |
TWI565021B true TWI565021B (zh) | 2017-01-01 |
Family
ID=45806551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100121479A TWI565021B (zh) | 2010-09-15 | 2011-06-20 | 連接器總成及其製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8451621B2 (zh) |
CN (1) | CN102403278B (zh) |
HK (1) | HK1168195A1 (zh) |
MY (1) | MY166609A (zh) |
SG (1) | SG179333A1 (zh) |
TW (1) | TWI565021B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9048338B2 (en) * | 2011-11-04 | 2015-06-02 | Infineon Technologies Ag | Device including two power semiconductor chips and manufacturing thereof |
US10128219B2 (en) * | 2012-04-25 | 2018-11-13 | Texas Instruments Incorporated | Multi-chip module including stacked power devices with metal clip |
US9078380B2 (en) * | 2012-10-19 | 2015-07-07 | Nvidia Corporation | MOSFET stack package |
US9470720B2 (en) | 2013-03-08 | 2016-10-18 | Sandisk Technologies Llc | Test system with localized heating and method of manufacture thereof |
US10013033B2 (en) | 2013-06-19 | 2018-07-03 | Sandisk Technologies Llc | Electronic assembly with thermal channel and method of manufacture thereof |
US9313874B2 (en) | 2013-06-19 | 2016-04-12 | SMART Storage Systems, Inc. | Electronic system with heat extraction and method of manufacture thereof |
US9898056B2 (en) | 2013-06-19 | 2018-02-20 | Sandisk Technologies Llc | Electronic assembly with thermal channel and method of manufacture thereof |
US9549457B2 (en) | 2014-02-12 | 2017-01-17 | Sandisk Technologies Llc | System and method for redirecting airflow across an electronic assembly |
US9497889B2 (en) | 2014-02-27 | 2016-11-15 | Sandisk Technologies Llc | Heat dissipation for substrate assemblies |
US9519319B2 (en) | 2014-03-14 | 2016-12-13 | Sandisk Technologies Llc | Self-supporting thermal tube structure for electronic assemblies |
US9485851B2 (en) | 2014-03-14 | 2016-11-01 | Sandisk Technologies Llc | Thermal tube assembly structures |
US9348377B2 (en) * | 2014-03-14 | 2016-05-24 | Sandisk Enterprise Ip Llc | Thermal isolation techniques |
USD857420S1 (en) | 2016-12-23 | 2019-08-27 | Few Fahrzeugelektrikwerk Gmbh & Co. Kg | Mounting device |
DE102016125781A1 (de) * | 2016-12-28 | 2018-06-28 | Few Fahrzeugelektrikwerk Gmbh & Co. Kg | Elektrisches Anschlusselement |
TWI637476B (zh) * | 2017-02-14 | 2018-10-01 | 來揚科技股份有限公司 | 雙晶片封裝結構 |
US11309273B2 (en) | 2017-05-19 | 2022-04-19 | Shindengen Electric Manufacturing Co., Ltd. | Electronic module |
JP6952042B2 (ja) * | 2017-05-19 | 2021-10-20 | 新電元工業株式会社 | 電子モジュール |
WO2019197304A1 (en) * | 2018-04-11 | 2019-10-17 | Abb Schweiz Ag | Material reduced metallic plate on power semiconductor chip |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050017339A1 (en) * | 2003-06-19 | 2005-01-27 | Shigeharu Yoshiba | Semiconductor device and switching element |
US20050191913A1 (en) * | 2004-02-27 | 2005-09-01 | Farnworth Warren M. | Electrical contacts, devices including the same, and associated methods of fabrication |
TW200742122A (en) * | 2005-07-12 | 2007-11-01 | Lamina Ceramics Inc | Surface mountable light emitting diode assemblies packaged for high temperature operation |
TW200915587A (en) * | 2007-07-13 | 2009-04-01 | Miasole | Photovoltaic module with integrated energy storage |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01140580A (ja) * | 1987-11-25 | 1989-06-01 | Mitsubishi Electric Corp | 接続用ジャンパとその製造方法 |
US5241134A (en) * | 1990-09-17 | 1993-08-31 | Yoo Clarence S | Terminals of surface mount components |
US5311401A (en) | 1991-07-09 | 1994-05-10 | Hughes Aircraft Company | Stacked chip assembly and manufacturing method therefor |
US5313096A (en) | 1992-03-16 | 1994-05-17 | Dense-Pac Microsystems, Inc. | IC chip package having chip attached to and wire bonded within an overlying substrate |
US5291061A (en) | 1993-04-06 | 1994-03-01 | Micron Semiconductor, Inc. | Multi-chip stacked devices |
US5532512A (en) | 1994-10-03 | 1996-07-02 | General Electric Company | Direct stacked and flip chip power semiconductor device structures |
US5796159A (en) * | 1995-11-30 | 1998-08-18 | Analog Devices, Inc. | Thermally efficient integrated circuit package |
DE19635582C1 (de) | 1996-09-02 | 1998-02-19 | Siemens Ag | Leistungs-Halbleiterbauelement für Brückenschaltungen mit High- bzw. Low-Side-Schaltern |
KR100304959B1 (ko) | 1998-10-21 | 2001-09-24 | 김영환 | 칩 적층형 반도체 패키지 및 그 제조방법 |
US6291881B1 (en) * | 1999-03-04 | 2001-09-18 | United Microelectronics Corp. | Dual silicon chip package |
TW415056B (en) | 1999-08-05 | 2000-12-11 | Siliconware Precision Industries Co Ltd | Multi-chip packaging structure |
DE10009171B4 (de) | 2000-02-26 | 2005-08-11 | Robert Bosch Gmbh | Stromrichter und sein Herstellverfahren |
US6472758B1 (en) * | 2000-07-20 | 2002-10-29 | Amkor Technology, Inc. | Semiconductor package including stacked semiconductor dies and bond wires |
JP2002176137A (ja) | 2000-09-28 | 2002-06-21 | Toshiba Corp | 積層型半導体デバイス |
JP3802742B2 (ja) * | 2000-10-06 | 2006-07-26 | 矢崎総業株式会社 | シールドコネクタ |
US6720643B1 (en) | 2001-02-22 | 2004-04-13 | Rambus, Inc. | Stacked semiconductor module |
TW498470B (en) | 2001-05-25 | 2002-08-11 | Siliconware Precision Industries Co Ltd | Semiconductor packaging with stacked chips |
JP4714371B2 (ja) * | 2001-06-06 | 2011-06-29 | ポリマテック株式会社 | 熱伝導性成形体及びその製造方法 |
TW587850U (en) * | 2001-08-06 | 2004-05-11 | Delta Electronics Inc | Power supply device with a plug protection structure |
US6979894B1 (en) | 2001-09-27 | 2005-12-27 | Marvell International Ltd. | Integrated chip package having intermediate substrate |
US6774475B2 (en) | 2002-01-24 | 2004-08-10 | International Business Machines Corporation | Vertically stacked memory chips in FBGA packages |
US7095053B2 (en) | 2003-05-05 | 2006-08-22 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
US7005734B2 (en) | 2003-05-05 | 2006-02-28 | Ixys Corporation | Double-sided cooling isolated packaged power semiconductor device |
US7193307B2 (en) | 2004-03-25 | 2007-03-20 | Ault Incorporated | Multi-layer FET array and method of fabricating |
JP2005302951A (ja) | 2004-04-09 | 2005-10-27 | Toshiba Corp | 電力用半導体装置パッケージ |
US7898092B2 (en) | 2007-11-21 | 2011-03-01 | Alpha & Omega Semiconductor, | Stacked-die package for battery power management |
US7598600B2 (en) | 2005-03-30 | 2009-10-06 | Stats Chippac Ltd. | Stackable power semiconductor package system |
JP4309368B2 (ja) * | 2005-03-30 | 2009-08-05 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US7030317B1 (en) * | 2005-04-13 | 2006-04-18 | Delphi Technologies, Inc. | Electronic assembly with stacked integrated circuit die |
US7615854B2 (en) * | 2005-11-03 | 2009-11-10 | International Rectifier Corporation | Semiconductor package that includes stacked semiconductor die |
DE102006002381B3 (de) | 2006-01-17 | 2007-07-19 | Infineon Technologies Ag | Leistungshalbleiterbauteil mit Chipstapel und Verfahren zu seiner Herstellung |
US7569920B2 (en) | 2006-05-10 | 2009-08-04 | Infineon Technologies Ag | Electronic component having at least one vertical semiconductor power transistor |
US7485954B2 (en) | 2006-09-07 | 2009-02-03 | Alpha And Omega Semiconductor Limited | Stacked dual MOSFET package |
JP2008108675A (ja) * | 2006-10-27 | 2008-05-08 | Toshiba Corp | プラグ |
US7932586B2 (en) * | 2006-12-18 | 2011-04-26 | Mediatek Inc. | Leadframe on heat sink (LOHS) semiconductor packages and fabrication methods thereof |
TWI327359B (en) | 2007-02-13 | 2010-07-11 | Advanced Semiconductor Eng | Stacked semiconductor package |
JP2009094152A (ja) * | 2007-10-04 | 2009-04-30 | Hitachi Ltd | 半導体装置、その製造方法及び半導体搭載用フレキシブル基板 |
-
2010
- 2010-09-15 MY MYPI2010004311A patent/MY166609A/en unknown
- 2010-11-18 US US12/948,970 patent/US8451621B2/en active Active
- 2010-11-18 US US12/948,977 patent/US8449339B2/en active Active
-
2011
- 2011-06-20 TW TW100121479A patent/TWI565021B/zh active
- 2011-07-06 CN CN201110187462.5A patent/CN102403278B/zh active Active
- 2011-07-27 SG SG2011054301A patent/SG179333A1/en unknown
-
2012
- 2012-09-05 HK HK12108663.5A patent/HK1168195A1/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050017339A1 (en) * | 2003-06-19 | 2005-01-27 | Shigeharu Yoshiba | Semiconductor device and switching element |
US20050191913A1 (en) * | 2004-02-27 | 2005-09-01 | Farnworth Warren M. | Electrical contacts, devices including the same, and associated methods of fabrication |
TW200742122A (en) * | 2005-07-12 | 2007-11-01 | Lamina Ceramics Inc | Surface mountable light emitting diode assemblies packaged for high temperature operation |
TW200915587A (en) * | 2007-07-13 | 2009-04-01 | Miasole | Photovoltaic module with integrated energy storage |
Also Published As
Publication number | Publication date |
---|---|
CN102403278B (zh) | 2016-03-16 |
US8449339B2 (en) | 2013-05-28 |
CN102403278A (zh) | 2012-04-04 |
US8451621B2 (en) | 2013-05-28 |
HK1168195A1 (zh) | 2012-12-21 |
MY166609A (en) | 2018-07-17 |
US20120064781A1 (en) | 2012-03-15 |
US20120063107A1 (en) | 2012-03-15 |
SG179333A1 (en) | 2012-04-27 |
TW201222757A (en) | 2012-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI565021B (zh) | 連接器總成及其製造方法 | |
JP5485110B2 (ja) | 配線基板及びその製造方法、電子装置 | |
JP4775007B2 (ja) | 半導体装置及びその製造方法 | |
US7176062B1 (en) | Lead-frame method and assembly for interconnecting circuits within a circuit module | |
US7312521B2 (en) | Semiconductor device with holding member | |
US20060033112A1 (en) | Substrate for light emitting diodes | |
KR101939864B1 (ko) | 캐리어 장치, 캐리어 장치를 포함하는 전기 장치 및 이들의 제조 방법 | |
JP2006060128A (ja) | 半導体装置 | |
KR20090122274A (ko) | 미세 피치 마이크로 접촉부 및 그 형성 방법 | |
CN105359632B (zh) | 布线基板以及电子装置 | |
US8110921B2 (en) | Semiconductor package and method of manufacturing the same | |
KR100802267B1 (ko) | Bga형 반도체 장치 및 그 제조 방법 | |
JP2007027281A (ja) | 半導体装置 | |
JP6109078B2 (ja) | リードクラックが強化された電子素子用テープ | |
US8304665B2 (en) | Package substrate having landless conductive traces | |
US6833512B2 (en) | Substrate board structure | |
US20200365418A1 (en) | Printed wiring board and method for manufacturing printed wiring board | |
JPH07235618A (ja) | 多端子半導体パッケージ | |
JP5868274B2 (ja) | 配線基板およびそれを用いた電子装置 | |
JP2011119481A5 (zh) | ||
KR101814843B1 (ko) | 인쇄회로기판 및 그의 제조 방법 | |
CN110660896B (zh) | 一种led封装结构及其封装方法 | |
US20170062375A1 (en) | Semiconductor device | |
JP2019062062A (ja) | 配線基板、電子装置、及び、配線基板の製造方法 | |
TWI315169B (en) | Wiring substrate with improvement in tensile strength of traces |