CN102403278A - 连接器组件及制造方法 - Google Patents

连接器组件及制造方法 Download PDF

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Publication number
CN102403278A
CN102403278A CN2011101874625A CN201110187462A CN102403278A CN 102403278 A CN102403278 A CN 102403278A CN 2011101874625 A CN2011101874625 A CN 2011101874625A CN 201110187462 A CN201110187462 A CN 201110187462A CN 102403278 A CN102403278 A CN 102403278A
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connector assembly
electric connector
connector
electrical insulating
insulating material
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CN102403278B (zh
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S·克里南
王松伟
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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    • H—ELECTRICITY
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    • H05K7/00—Constructional details common to different types of electric apparatus
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Abstract

一种连接器组件以及用于制造连接器组件的方法。根据实施例，连接器组件包括具有第一和第二表面以及第一和第二端部的电连接器。一层电绝缘材料由在第一端部的第一表面的一部分形成或者被形成于该部分之上。可选地，一层电绝缘材料能够由第二表面形成或者被形成第二表面之上。

Description

连接器组件及制造方法
技术领域
本发明一般地涉及电子领域，并且更特别地涉及连接器组件。
背景技术
在过去，半导体工业制造包含在保护结构(例如，塑封料)之内的单个半导体管芯的半导体零件。各种类型的半导体零件被安装于含有允许半导体零件相互通信的互连结构的印制电路板。随着在电子器件中对更多功能的需求增大，希望将更多的半导体零件包含于印制电路板上。因而，半导体制造商一直努力制造具有更小的外形及安装占用面积的半导体零件。
在某些实施例中，半导体管芯以粘合材料插入层相互垂直堆叠，该粘合材料插入层附接于半导体管芯以便将管芯键合到一起以形成多芯片或多管芯结构。多芯片结构被附接于玻璃树脂型的印制电路板基板或其他相似的基板。然后使半导体管芯丝线键合于基板以在基板和半导体管芯之间形成电互连。在2003年11月18日颁予Thomas B.Glenn等人的美国专利No.6,650,019中公开了此类封装结构的一个实例。在2006年4月18日颁予Todd P.Oman的美国专利No.7,030,317中公开了具有层叠的集成电路管芯的电子组件的一个实例。
层叠半导体管芯的缺点包括形成半导体管芯之间的电互连以及去除来自堆叠结构的热量。
因此，拥有适合于在半导体管芯及半导体零件之间传输电信号并且提供半导体管芯的足够的热耗散的连接器组件将是有利的。有利的是该电子组件及方法的实现是有成本和时间效益的。
附图说明
本发明通过结合附图来阅读后面的详细描述将会更好理解，在附图中相同的参考标记指示相同的元件，并且在附图中：
图1是根据本发明的实施例的连接器组件的一部分的侧视图；
图2是根据本发明的实施例的连接器组件的一部分的侧视图；
图3是根据本发明的实施例的连接器组件的一部分的截面图；
图4是根据本发明的实施例的连接器组件的一部分的侧视图；
图5是图4的连接器组件的一部分的顶视图；
图6是根据本发明的实施例的连接器组件的等距视图；
图7是图6的连接器组件在相对图6所示的取向反向的取向上的等距视图；
图8是图6和7的连接器组件的侧视图；
图9是根据本发明的实施例的连接器组件的等距视图；
图10是图9的连接器组件在相对图9所示的取向反向的取向上的等距视图；
图11是根据本发明的实施例连接器组件的等距视图；
图12是图11的连接器组件在相对图11所示的取向反向的取向上的等距视图；以及
图13是根据本发明的实施例的连接器组件的等距视图。
具体实施方式
一般地，本发明提供连接器组件以及用于制造连接器组件的方法。根据本发明的实施例，连接器组件包括具有相反的表面和相对的端部的电连接器。中心区域位于相对的端部之间。电绝缘材料形成于电连接器的一个端部中的一个表面上。作为选择，电绝缘材料能够形成于第一和第二端部中的相反的表面上。
图1是根据本发明的一种实施例的连接器组件400的侧视图。在图1中示出的是矩形形状的电连接器402，该电连接器402具有相反的表面404和406、端部区域或部分408和412以及中心区域或部分410。举例来说，电连接器402包括铜。其他适用于电连接器402的材料包括铝、锡、钢、涂布有贵金属的金属夹、铜合金、铍、金、银、铝合金、黄铜、黄铜合金等。电连接器402可以从例如具有厚度范围为大约150～大约250微米(μm)的铜片蚀刻或切割出。
将厚度范围为大约50～大约100μm的一层电绝缘材料414形成于端部区域412中的表面404上。电绝缘材料414可以是氧化铝、氮化物、隔热材料、陶瓷等。作为选择，可以阳极氧化在区域412中的表面404。
图2是根据本发明的另一种实施例的连接器组件416的侧视图。连接器组件416与连接器组件400相似，但包括一层形成于端部区域412中的表面406上的电绝缘材料418。电绝缘材料418可以与电绝缘材料414相同或者它可以不同于电绝缘材料414。作为选择，可以阳极氧化在端部区域412中的表面404和406。
图3是根据本发明的另一种实施例的连接器组件420的截面图。在图3中示出的是具有相反的表面424和426、端部区域或部分428和432以及中心区域或部分430的基板422。基板422优选由树脂(例如环氧、聚酰亚胺、三嗪或酚醛树脂)、双马来酰亚胺三嗪(BT)树脂、环氧玻璃复合物、印制电路板(PCB)材料、FR-4、陶瓷等形成。作为选择，基板22可以包括挠性板材料或选择性阳极氧化的铝基板。导电互连层434被形成于基板422中。形成导电触点436使之与端部区域428中的互连层434的一部分接触并且形成导电触点438使之与端部区域432中的互连层434的一部分接触。导电触点436和438可以通过使用光刻技术图形化导电铂、丝网印刷、在端部区域428和432中的互连层434的部分上沉积等来形成。
虽然连接器组件420被示出在端部区域428和432中分别具有导电触点436和438，但是本发明并不限制于此。作为选择，在端部区域432中可以不存在导电触点438或者在端部区域428中可以不存在导电触点436。
图4是根据本发明的另一种实施例的连接器组件440的侧视图。在图4中示出的是矩形形状的电连接器442，该电连接器442具有相反的表面444和446、端部区域或部分448和452以及中心区域或部分450。举例来说，电连接器442包括铜。其他适用于电连接器442的材料包括铝、锡、钢、涂布有贵金属的金属夹、铜合金、铍、金、银、铝合金、黄铜、黄铜合金等。电连接器442可以从例如厚度范围为大约150～大约200μm的铜片蚀刻或切割出并且被压印或压花使得端部区域448位于由虚线456标识的水平面并且端部区域452位于由虚线457标识的水平面。优选地，水平面456和458在垂直方向上彼此间隔开。
将厚度范围为大约50～大约100μm的一层电绝缘材料454形成于端部区域452中的表面446的一部分上。作为选择，可以将该层电绝缘材料454形成于端部区域452中的表面446的基本上所有部分上。电绝缘材料454可以是氧化铝、氮化物、隔热材料、陶瓷等。作为选择，可以阳极氧化在区域452中的表面446。
图5是图4所示的连接器组件440的实施例的顶视图。在图5中示出的是具有表面444以及通过中心区域450相互连接的端部区域448和452的电连接器442。凹口460从端部区域452的末端延伸到端部区域452之中。电连接器442中凹口460延伸到其中的部分可以称为体区域。端部区域448与中心区域450相接的区域由虚线462标识并且端部区域450与端部区域452相接的区域由虚线464标识。
应当指出，凹口460是任选的并且在电连接器440中可以不存在。
图6-8示出了根据本发明的另一种实施例的连接器组件470。图6和7是连接器组件470的等距视图并且图8是连接器组件470的侧视图。为了清晰起见，图6-8将在一起描述。在图6-8中示出的是包括电连接器472的连接器组件470，该电连接器472具有相反的表面474和476、端部区域或部分478和482以及中心区域或部分480。举例来说，电连接器472包括铜。其他适用于电连接器472的材料包括铝、锡、钢、涂布有贵金属的金属夹、铜合金、铍、金、银、铝合金、黄铜、黄铜合金等。电连接器472可以被蚀刻或切割从例如厚度范围为大约150～大约200微米(μm)的铜片蚀刻或切割出并且被压印或压花使得端部区域478位于由虚线486标识的水平面并且端部区域482位于由虚线488标识的水平面。优选地，虚线486和488位于其中的水平面在垂直方向上彼此间隔开。
中心区域480包括由中心子区域492连接到一起的端部子区域490和494。子区域490的端部496与端部区域478相接并且子区域490的端部498与中心子区域492的端部500相接。中心子区域492的端部502与子区域494的端部504相接并且子区域494的端部506与端部区域482的端部508相接。中心子区域492位于由虚线510标识的水平面。优选地，虚线492位于其中的水平面在虚线486和488位于其中的水平面之间并且与它们间隔开，即，中心区域492位于在端部区域486和488位于其中的水平面之间的并且与它们垂直间隔开的水平面。
将厚度范围为大约50～大约100μm的一层电绝缘材料512形成于端部区域482中的表面474的一部分上。作为选择，可以将该层电绝缘材料512形成于端部区域482中的表面474的基本上所有部分上。电绝缘材料512可以是氧化铝、氮化物、隔热材料、陶瓷等。作为选择，电绝缘层512可以不存在并且可以阳极氧化在区域482中的表面474的一部分或全部。
凹口514延伸到端部区域482之中。电连接器472中凹口514延伸到其中的部分可以称为体区域。
图9是其中不存在凹口514的连接器组件470A的等距视图。参考标记“A”已经被附加到参考标记470上以使具有凹口的连接器组件区分于没有凹口的连接器组件。
图10是其中在端部区域482中的表面474上形成了一层电绝缘材料512A的连接器组件470A的等距视图。作为选择，在图9和10所示出的连接器组件470A中可以不存在电绝缘材料512层并且在端部区域482中的表面474被阳极氧化。
图11和12是根据本发明的另一种实施例的包括电连接器522的连接器组件520的等距视图。电连接器522具有相反的表面524和526、端部区域或部分528和532以及中心区域或部分530并且包括铝。在端部区域532中的表面526被阳极氧化以形成厚度范围为大约50～大约100μm的氧化铝层534。应当指出，可以阳极氧化在端部区域532中的表面526的一部分或者可以阳极氧化在端部区域532中的基本上整个表面526。
图13是根据本发明的另一种实施例的连接器组件550的等距视图。在图12中示出的是包括电连接器472的连接器组件550，该电连接器472具有相反的表面474和476、端部区域或部分478和482以及中心区域或部分480。电连接器472已经参考图6-8进行了描述。
将厚度范围为大约50～大约100μm的一层电绝缘材料552形成于端部区域482中的表面476上。电绝缘材料552可以是氧化铝、氮化物、隔热材料、陶瓷等。作为选择，可以阳极氧化在区域482中的表面474。根据其中电连接器472为铝的实施例，阳极氧化的表面474由表面474形成了氧化铝。
电连接器472A与电绝缘层552耦连以形成连接器组件550。更特别地，表面474在端部区域482中。参考标记“A”已经被附加到参考标记472上以区分形成连接器组件550的两个电连接器。本发明并不限制相互叠加以形成连接器组件的电连接器472的数目。
应当意识到，至此已经提供了连接器组件以及用于制造连接器组件的方法。根据本发明的实施例，连接器组件包括具有相对的端部和相反的表面的电连接器。电绝缘材料可以形成于电连接器的一个或两个端部中的一个或两个表面的某些部分上。连接器组件可以用来形成具有层叠的半导体管芯的半导体零件。连接器组件使半导体管芯能够堆叠由此减少在印制电路板上的占用面积并且允许从半导体零件中有效地去除热量。
虽然在此已经公开了具体的实施例，但是这并不意欲本发明仅限于所公开的实施例。本领域技术人员应当意识到修改和改变能够在不脱离本发明的精神的情况下进行。希望本发明包括在所附权利要求书的范围之内的所有此类修改和改变。

Claims (10)

1.一种连接器组件，包括：
具有第一和第二端部以及第一和第二表面的第一电连接器；以及
在所述第一端部的所述第一表面上的第一电绝缘材料。
2.根据权利要求1所述的连接器组件，其中所述第一电连接器包括导电材料。
3.根据权利要求1所述的连接器组件，其中所述第一电绝缘材料是选自包括陶瓷、氧化物、氮化物和导热材料的电绝缘材料的组中的电绝缘材料。
4.根据权利要求1所述的连接器组件，还包括在所述第一端部的所述第二表面上的第二电绝缘材料。
5.根据权利要求1所述的连接器组件，其中所述第一电连接器具有第一、第二和第三部分，所述第一部分通过所述第二部分与所述第三部分耦连，并且其中所述第一部分位于第一水平面，所述第三部分位于第二水平面。
6.根据权利要求5所述的连接器组件，其中所述第二部分包括：
第一、第二和第三子部分，所述第一子部分通过所述第二子部分与所述第三子部分耦连，所述第二子部分位于第三水平面，所述第三水平面垂直地位于所述第一和第二水平面之间。
7.根据权利要求1所述的连接器组件，其中所述第一电连接器具有第一、第二和第三部分，所述第一部分通过所述第二部分与所述第三部分耦连，并且其中所述第三部分是平面，具有体部分、端部和从所述端部延伸进所述体部分的凹口，并且还包括：第二电连接器，所述第二电连接器与所述第一电连接器的所述第一端部的所述第一表面之上的所述第一电绝缘材料耦连。
8.一种用于制造连接器组件的方法，包括：
提供具有第一和第二表面以及第一和第二端部的第一电连接器；以及
将电绝缘材料形成于所述第一端部的所述第一表面的一部分之上。
9.根据权利要求8所述的方法，其中提供所述第一电连接器包括：
形成所述第一电连接器以使所述第一端部位于第一水平面并且所述第二端部位于第二水平面。
10.根据权利要求9所述的方法，其中提供所述第一电连接器包括：形成所述第一电连接器以使中心区域位于所述第一和第二端部之间，其中所述中心区域包括处于第三水平面的部分，所述第三水平面位于所述第一和第二水平面之间，并且该方法还包括：使第二电连接器与所述第一电连接器的所述第一端部的所述第一表面的所述部分之上的所述电绝缘材料耦连。
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048338B2 (en) * 2011-11-04 2015-06-02 Infineon Technologies Ag Device including two power semiconductor chips and manufacturing thereof
US10128219B2 (en) * 2012-04-25 2018-11-13 Texas Instruments Incorporated Multi-chip module including stacked power devices with metal clip
US9078380B2 (en) * 2012-10-19 2015-07-07 Nvidia Corporation MOSFET stack package
US9470720B2 (en) 2013-03-08 2016-10-18 Sandisk Technologies Llc Test system with localized heating and method of manufacture thereof
US10013033B2 (en) 2013-06-19 2018-07-03 Sandisk Technologies Llc Electronic assembly with thermal channel and method of manufacture thereof
US9898056B2 (en) 2013-06-19 2018-02-20 Sandisk Technologies Llc Electronic assembly with thermal channel and method of manufacture thereof
US9313874B2 (en) 2013-06-19 2016-04-12 SMART Storage Systems, Inc. Electronic system with heat extraction and method of manufacture thereof
US9549457B2 (en) 2014-02-12 2017-01-17 Sandisk Technologies Llc System and method for redirecting airflow across an electronic assembly
US9497889B2 (en) 2014-02-27 2016-11-15 Sandisk Technologies Llc Heat dissipation for substrate assemblies
US9485851B2 (en) 2014-03-14 2016-11-01 Sandisk Technologies Llc Thermal tube assembly structures
US9348377B2 (en) * 2014-03-14 2016-05-24 Sandisk Enterprise Ip Llc Thermal isolation techniques
US9519319B2 (en) 2014-03-14 2016-12-13 Sandisk Technologies Llc Self-supporting thermal tube structure for electronic assemblies
USD857420S1 (en) 2016-12-23 2019-08-27 Few Fahrzeugelektrikwerk Gmbh & Co. Kg Mounting device
DE202016008092U1 (de) * 2016-12-28 2017-03-03 Few Fahrzeugelektrikwerk Gmbh & Co. Kg Elektrisches Anschlusselement
TWI637476B (zh) * 2017-02-14 2018-10-01 來揚科技股份有限公司 雙晶片封裝結構
JP6952042B2 (ja) * 2017-05-19 2021-10-20 新電元工業株式会社 電子モジュール
CN109287129B (zh) * 2017-05-19 2022-04-08 新电元工业株式会社 电子模块
JP7437582B2 (ja) * 2018-04-11 2024-02-26 ヒタチ・エナジー・リミテッド パワー半導体チップ上の材料減少金属板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962585A (en) * 1987-11-25 1990-10-16 Mitsubishi Denki Kabushiki Kaisha Connective jumper and method of manufacturing the same
US5796159A (en) * 1995-11-30 1998-08-18 Analog Devices, Inc. Thermally efficient integrated circuit package
US6291881B1 (en) * 1999-03-04 2001-09-18 United Microelectronics Corp. Dual silicon chip package
TW587850U (en) * 2001-08-06 2004-05-11 Delta Electronics Inc Power supply device with a plug protection structure
CN101207117A (zh) * 2006-12-18 2008-06-25 联发科技股份有限公司 系统级封装体及其制造方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241134A (en) * 1990-09-17 1993-08-31 Yoo Clarence S Terminals of surface mount components
US5311401A (en) 1991-07-09 1994-05-10 Hughes Aircraft Company Stacked chip assembly and manufacturing method therefor
US5313096A (en) 1992-03-16 1994-05-17 Dense-Pac Microsystems, Inc. IC chip package having chip attached to and wire bonded within an overlying substrate
US5291061A (en) 1993-04-06 1994-03-01 Micron Semiconductor, Inc. Multi-chip stacked devices
US5532512A (en) 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
DE19635582C1 (de) 1996-09-02 1998-02-19 Siemens Ag Leistungs-Halbleiterbauelement für Brückenschaltungen mit High- bzw. Low-Side-Schaltern
KR100304959B1 (ko) 1998-10-21 2001-09-24 김영환 칩 적층형 반도체 패키지 및 그 제조방법
TW415056B (en) 1999-08-05 2000-12-11 Siliconware Precision Industries Co Ltd Multi-chip packaging structure
DE10009171B4 (de) 2000-02-26 2005-08-11 Robert Bosch Gmbh Stromrichter und sein Herstellverfahren
US6472758B1 (en) * 2000-07-20 2002-10-29 Amkor Technology, Inc. Semiconductor package including stacked semiconductor dies and bond wires
JP2002176137A (ja) 2000-09-28 2002-06-21 Toshiba Corp 積層型半導体デバイス
JP3802742B2 (ja) * 2000-10-06 2006-07-26 矢崎総業株式会社 シールドコネクタ
US6720643B1 (en) 2001-02-22 2004-04-13 Rambus, Inc. Stacked semiconductor module
TW498470B (en) 2001-05-25 2002-08-11 Siliconware Precision Industries Co Ltd Semiconductor packaging with stacked chips
JP4714371B2 (ja) * 2001-06-06 2011-06-29 ポリマテック株式会社 熱伝導性成形体及びその製造方法
US6979894B1 (en) 2001-09-27 2005-12-27 Marvell International Ltd. Integrated chip package having intermediate substrate
US6774475B2 (en) 2002-01-24 2004-08-10 International Business Machines Corporation Vertically stacked memory chips in FBGA packages
US7095053B2 (en) 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7005734B2 (en) 2003-05-05 2006-02-28 Ixys Corporation Double-sided cooling isolated packaged power semiconductor device
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
US7094117B2 (en) * 2004-02-27 2006-08-22 Micron Technology, Inc. Electrical contacts with dielectric cores
US7193307B2 (en) 2004-03-25 2007-03-20 Ault Incorporated Multi-layer FET array and method of fabricating
JP2005302951A (ja) * 2004-04-09 2005-10-27 Toshiba Corp 電力用半導体装置パッケージ
US7898092B2 (en) 2007-11-21 2011-03-01 Alpha & Omega Semiconductor, Stacked-die package for battery power management
US7598600B2 (en) 2005-03-30 2009-10-06 Stats Chippac Ltd. Stackable power semiconductor package system
JP4309368B2 (ja) * 2005-03-30 2009-08-05 エルピーダメモリ株式会社 半導体記憶装置
US7030317B1 (en) 2005-04-13 2006-04-18 Delphi Technologies, Inc. Electronic assembly with stacked integrated circuit die
WO2007056253A2 (en) 2005-11-03 2007-05-18 International Rectifier Corporation A semiconductor package that includes stacked semiconductor die
DE102006002381B3 (de) 2006-01-17 2007-07-19 Infineon Technologies Ag Leistungshalbleiterbauteil mit Chipstapel und Verfahren zu seiner Herstellung
US7569920B2 (en) 2006-05-10 2009-08-04 Infineon Technologies Ag Electronic component having at least one vertical semiconductor power transistor
US7485954B2 (en) 2006-09-07 2009-02-03 Alpha And Omega Semiconductor Limited Stacked dual MOSFET package
JP2008108675A (ja) * 2006-10-27 2008-05-08 Toshiba Corp プラグ
TWI327359B (en) 2007-02-13 2010-07-11 Advanced Semiconductor Eng Stacked semiconductor package
US20090014049A1 (en) * 2007-07-13 2009-01-15 Miasole Photovoltaic module with integrated energy storage
JP2009094152A (ja) * 2007-10-04 2009-04-30 Hitachi Ltd 半導体装置、その製造方法及び半導体搭載用フレキシブル基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962585A (en) * 1987-11-25 1990-10-16 Mitsubishi Denki Kabushiki Kaisha Connective jumper and method of manufacturing the same
US5796159A (en) * 1995-11-30 1998-08-18 Analog Devices, Inc. Thermally efficient integrated circuit package
US6291881B1 (en) * 1999-03-04 2001-09-18 United Microelectronics Corp. Dual silicon chip package
TW587850U (en) * 2001-08-06 2004-05-11 Delta Electronics Inc Power supply device with a plug protection structure
CN101207117A (zh) * 2006-12-18 2008-06-25 联发科技股份有限公司 系统级封装体及其制造方法

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