TWI563632B - Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material - Google Patents

Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material

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Publication number
TWI563632B
TWI563632B TW104109500A TW104109500A TWI563632B TW I563632 B TWI563632 B TW I563632B TW 104109500 A TW104109500 A TW 104109500A TW 104109500 A TW104109500 A TW 104109500A TW I563632 B TWI563632 B TW I563632B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor devices
gate structure
contact structures
structure positioned
Prior art date
Application number
TW104109500A
Other languages
English (en)
Other versions
TW201541611A (zh
Inventor
Ruilong Xie
Jr William J Taylor
Ryan Ryoung-Han Kim
Original Assignee
Globalfoundries Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalfoundries Us Inc filed Critical Globalfoundries Us Inc
Publication of TW201541611A publication Critical patent/TW201541611A/zh
Application granted granted Critical
Publication of TWI563632B publication Critical patent/TWI563632B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
TW104109500A 2014-04-01 2015-03-25 Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material TWI563632B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/242,416 US9299781B2 (en) 2014-04-01 2014-04-01 Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material

Publications (2)

Publication Number Publication Date
TW201541611A TW201541611A (zh) 2015-11-01
TWI563632B true TWI563632B (en) 2016-12-21

Family

ID=54191512

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109500A TWI563632B (en) 2014-04-01 2015-03-25 Semiconductor devices with contact structures and a gate structure positioned in trenches formed in a layer of material

Country Status (3)

Country Link
US (1) US9299781B2 (zh)
CN (1) CN104979347B (zh)
TW (1) TWI563632B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312388B2 (en) * 2014-05-01 2016-04-12 Globalfoundries Inc. Methods of forming epitaxial semiconductor material in trenches located above the source and drain regions of a semiconductor device
US9373641B2 (en) * 2014-08-19 2016-06-21 International Business Machines Corporation Methods of forming field effect transistors using a gate cut process following final gate formation
US9871042B2 (en) 2015-12-03 2018-01-16 Samsung Electronics Co., Ltd. Semiconductor device having fin-type patterns
WO2017113266A1 (zh) * 2015-12-31 2017-07-06 上海凯世通半导体有限公司 FinFET的掺杂方法
US10014389B2 (en) * 2016-07-26 2018-07-03 Globalfoundries Inc. Methods of forming IC products comprising a nano-sheet device and a transistor device having first and second replacement gate structures
WO2018125035A1 (en) * 2016-12-27 2018-07-05 Intel Corporation Transistors including final source/drain material processed after replacement gate processing
US10103233B1 (en) * 2017-09-29 2018-10-16 Nxp Usa, Inc. Transistor die with drain via arrangement, and methods of manufacture thereof
US20230008496A1 (en) * 2021-07-09 2023-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structure for semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130285155A1 (en) * 2011-12-20 2013-10-31 Glenn A. Glass Iii-v layers for n-type and p-type mos source-drain contacts

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933183B2 (en) * 2003-12-09 2005-08-23 International Business Machines Corporation Selfaligned source/drain FinFET process flow
US20050191812A1 (en) * 2004-03-01 2005-09-01 Lsi Logic Corporation Spacer-less transistor integration scheme for high-k gate dielectrics and small gate-to-gate spaces applicable to Si, SiGe strained silicon schemes
US7220647B2 (en) * 2005-02-02 2007-05-22 United Microelectronics Corp. Method of cleaning wafer and method of manufacturing gate structure
US7279375B2 (en) 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US20070287256A1 (en) * 2006-06-07 2007-12-13 International Business Machines Corporation Contact scheme for FINFET structures with multiple FINs
KR100855834B1 (ko) * 2007-05-25 2008-09-01 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
US8110877B2 (en) * 2008-12-19 2012-02-07 Intel Corporation Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
US8367498B2 (en) 2010-10-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-like field effect transistor (FinFET) device and method of manufacturing same
CN102768957B (zh) 2011-05-06 2016-09-14 中国科学院微电子研究所 鳍式场效应晶体管及其制造方法
CN102956453B (zh) * 2011-08-19 2017-02-22 联华电子股份有限公司 半导体装置及其制作方法
US8936979B2 (en) * 2012-06-11 2015-01-20 GlobalFoundries, Inc. Semiconductor devices having improved gate height uniformity and methods for fabricating same
US10535735B2 (en) * 2012-06-29 2020-01-14 Intel Corporation Contact resistance reduced P-MOS transistors employing Ge-rich contact layer
US9029913B2 (en) * 2013-03-11 2015-05-12 International Business Machines Corporation Silicon-germanium fins and silicon fins on a bulk substrate
US9219062B2 (en) * 2013-05-24 2015-12-22 GlobalFoundries, Inc. Integrated circuits with improved source/drain contacts and methods for fabricating such integrated circuits
US9159833B2 (en) 2013-11-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130285155A1 (en) * 2011-12-20 2013-10-31 Glenn A. Glass Iii-v layers for n-type and p-type mos source-drain contacts

Also Published As

Publication number Publication date
US20150279935A1 (en) 2015-10-01
CN104979347B (zh) 2018-04-20
US9299781B2 (en) 2016-03-29
CN104979347A (zh) 2015-10-14
TW201541611A (zh) 2015-11-01

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