SG11201602368YA - Methods of forming semiconductor devices and structures with improved planarization uniformity, and resulting structures and semiconductor devices - Google Patents
Methods of forming semiconductor devices and structures with improved planarization uniformity, and resulting structures and semiconductor devicesInfo
- Publication number
- SG11201602368YA SG11201602368YA SG11201602368YA SG11201602368YA SG11201602368YA SG 11201602368Y A SG11201602368Y A SG 11201602368YA SG 11201602368Y A SG11201602368Y A SG 11201602368YA SG 11201602368Y A SG11201602368Y A SG 11201602368YA SG 11201602368Y A SG11201602368Y A SG 11201602368YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor devices
- structures
- methods
- improved planarization
- planarization uniformity
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
- H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/038,164 US9082966B2 (en) | 2013-09-26 | 2013-09-26 | Methods of forming semiconductor devices and structures with improved planarization, uniformity |
PCT/US2014/054273 WO2015047692A1 (en) | 2013-09-26 | 2014-09-05 | Methods of forming semiconductor devices and structures with improved planarization uniformity, and resulting structures and semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201602368YA true SG11201602368YA (en) | 2016-04-28 |
Family
ID=52690145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201602368YA SG11201602368YA (en) | 2013-09-26 | 2014-09-05 | Methods of forming semiconductor devices and structures with improved planarization uniformity, and resulting structures and semiconductor devices |
Country Status (6)
Country | Link |
---|---|
US (3) | US9082966B2 (en) |
KR (1) | KR101748099B1 (en) |
CN (2) | CN105580114B (en) |
SG (1) | SG11201602368YA (en) |
TW (1) | TWI541886B (en) |
WO (1) | WO2015047692A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9082966B2 (en) | 2013-09-26 | 2015-07-14 | Micron Technology, Inc. | Methods of forming semiconductor devices and structures with improved planarization, uniformity |
US9899484B1 (en) * | 2016-12-30 | 2018-02-20 | Texas Instruments Incorporated | Transistor with source field plates under gate runner layers |
WO2018176422A1 (en) | 2017-03-31 | 2018-10-04 | 深圳前海达闼云端智能科技有限公司 | Resource scheduling method and apparatus, and base station |
TWI628756B (en) * | 2017-08-22 | 2018-07-01 | 鳳凰先驅股份有限公司 | Package structure and its fabrication method |
US20210013214A1 (en) * | 2019-07-09 | 2021-01-14 | Micron Technology, Inc. | Apparatus including access line structures and related methods and electronic systems |
TWI765643B (en) | 2021-04-06 | 2022-05-21 | 華邦電子股份有限公司 | Memory device and method of manufacturing the same |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2893892B2 (en) * | 1990-08-09 | 1999-05-24 | 日本電気株式会社 | Method for manufacturing semiconductor memory circuit device |
KR100304946B1 (en) * | 1994-07-08 | 2001-11-30 | 김영환 | Method for manufacturing semiconductor device |
US6342715B1 (en) | 1997-06-27 | 2002-01-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US6590255B2 (en) | 2000-09-29 | 2003-07-08 | Kabushiki Kaisha Toshiba | Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same |
KR100400033B1 (en) * | 2001-02-08 | 2003-09-29 | 삼성전자주식회사 | Semiconductor device having multi-interconnection structure and manufacturing method thereof |
US6844591B1 (en) * | 2003-09-17 | 2005-01-18 | Micron Technology, Inc. | Method of forming DRAM access transistors |
KR100654353B1 (en) * | 2005-06-28 | 2006-12-08 | 삼성전자주식회사 | Semiconductor integrated circuit device having capacitor and fabrication method thereof |
KR100833491B1 (en) | 2005-12-08 | 2008-05-29 | 한국전자통신연구원 | Embedded phase-change memory and method of fabrication the same |
US7419871B2 (en) * | 2006-04-25 | 2008-09-02 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
US8338812B2 (en) | 2008-01-16 | 2012-12-25 | Micron Technology, Inc. | Vertical spacer electrodes for variable-resistance material memories and vertical spacer variable-resistance material memory cells |
KR101006527B1 (en) | 2008-11-10 | 2011-01-07 | 주식회사 하이닉스반도체 | Phase change memory device and method for manufacturing the same |
KR101535653B1 (en) | 2009-02-09 | 2015-07-10 | 삼성전자주식회사 | Method for fabricating phase change memory device |
US8148222B2 (en) * | 2009-12-10 | 2012-04-03 | Micron Technology, Inc. | Cross-point diode arrays and methods of manufacturing cross-point diode arrays |
KR101709323B1 (en) | 2010-04-23 | 2017-02-22 | 삼성전자주식회사 | Resistance variable memory device and method for forming the same |
JP2012033839A (en) | 2010-08-03 | 2012-02-16 | Toshiba Corp | Method of manufacturing semiconductor device |
US8395935B2 (en) | 2010-10-06 | 2013-03-12 | Macronix International Co., Ltd. | Cross-point self-aligned reduced cell size phase change memory |
KR101204675B1 (en) * | 2011-02-15 | 2012-11-26 | 에스케이하이닉스 주식회사 | Semiconductor device comprising capacitor and metal contact and method for fabricating the same |
KR20120097206A (en) | 2011-02-24 | 2012-09-03 | 삼성전자주식회사 | Resistance variable memory device and method for forming the same |
KR20120104041A (en) | 2011-03-11 | 2012-09-20 | 삼성전자주식회사 | Phase-change memory device and manufacturing method at the same |
KR101817158B1 (en) | 2011-06-02 | 2018-01-11 | 삼성전자 주식회사 | Phase change memory device having stack-typed capacitor |
KR20130012385A (en) | 2011-07-25 | 2013-02-04 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
KR20130017647A (en) | 2011-08-11 | 2013-02-20 | 삼성전자주식회사 | Method of fabricating resistance variable memory device |
KR20130071006A (en) | 2011-12-20 | 2013-06-28 | 삼성전자주식회사 | Variable resistance memory device and method of forming the same |
TWI447858B (en) * | 2012-02-03 | 2014-08-01 | Inotera Memories Inc | Manufacturing method of random access memory |
US8994121B2 (en) * | 2013-03-22 | 2015-03-31 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US9082966B2 (en) | 2013-09-26 | 2015-07-14 | Micron Technology, Inc. | Methods of forming semiconductor devices and structures with improved planarization, uniformity |
-
2013
- 2013-09-26 US US14/038,164 patent/US9082966B2/en active Active
-
2014
- 2014-09-05 WO PCT/US2014/054273 patent/WO2015047692A1/en active Application Filing
- 2014-09-05 SG SG11201602368YA patent/SG11201602368YA/en unknown
- 2014-09-05 CN CN201480052485.7A patent/CN105580114B/en active Active
- 2014-09-05 KR KR1020167010502A patent/KR101748099B1/en active IP Right Grant
- 2014-09-05 CN CN201810894258.9A patent/CN109166964A/en active Pending
- 2014-09-19 TW TW103132519A patent/TWI541886B/en active
-
2015
- 2015-06-15 US US14/739,452 patent/US9343669B2/en active Active
-
2016
- 2016-03-24 US US15/080,060 patent/US9728449B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN105580114A (en) | 2016-05-11 |
CN105580114B (en) | 2018-09-11 |
US20160204022A1 (en) | 2016-07-14 |
TWI541886B (en) | 2016-07-11 |
US20150280116A1 (en) | 2015-10-01 |
US9728449B2 (en) | 2017-08-08 |
WO2015047692A1 (en) | 2015-04-02 |
KR101748099B1 (en) | 2017-06-15 |
US9082966B2 (en) | 2015-07-14 |
US20150083986A1 (en) | 2015-03-26 |
US9343669B2 (en) | 2016-05-17 |
KR20160052755A (en) | 2016-05-12 |
TW201521099A (en) | 2015-06-01 |
CN109166964A (en) | 2019-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1202983A1 (en) | Semiconductor device and manufacturing method of the same | |
GB2581749B (en) | Organomimetic devices and methods of use and manufacturing thereof | |
GB2517079B (en) | Security devices and methods of manufacture | |
SG11201510741TA (en) | Semiconductor devices including stair step structures, and related methods | |
EP3033767A4 (en) | Semiconductor structures and methods of fabrication of same | |
HK1201935A1 (en) | Methods and ophthalmic devices with organic semiconductor layer | |
EP2973716A4 (en) | Carbon doping semiconductor devices | |
EP2985790A4 (en) | Semiconductor device and semiconductor device manufacturing method | |
GB201412524D0 (en) | Semiconductor device with low-k spacer and method of forming the same | |
HK1204506A1 (en) | Semiconductor device and manufacturing method of semiconductor device | |
HK1198562A1 (en) | Method of manufacturing semiconductor device, and semiconductor device | |
GB2535418B (en) | Semiconductor nanowire fabrication | |
EP3027556A4 (en) | Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures | |
HK1202704A1 (en) | Manufacturing method of semiconductor device | |
HK1198783A1 (en) | Method of manufacturing semiconductor device and semiconductor device | |
SG11201509226RA (en) | Communication methods and communication devices | |
SG11201602368YA (en) | Methods of forming semiconductor devices and structures with improved planarization uniformity, and resulting structures and semiconductor devices | |
GB201320925D0 (en) | Semiconductor devices and fabrication methods | |
SG11201503368TA (en) | Method of fabricating semiconductor devices | |
HK1206869A1 (en) | Semiconductor device and method of manufacturing the same | |
SG11201510008UA (en) | Semiconductor device and manufacturing method therefor | |
HK1201101A1 (en) | Method of manufacturing semiconductor device and semiconductor device | |
GB201311862D0 (en) | Optoelectronic devices, methods of fabrication thereof and materials therefor | |
HK1201990A1 (en) | Semiconductor device and method of manufacturing same | |
HK1201983A1 (en) | Semiconductor device manufacturing method and semiconductor device |