SG11201510741TA - Semiconductor devices including stair step structures, and related methods - Google Patents
Semiconductor devices including stair step structures, and related methodsInfo
- Publication number
- SG11201510741TA SG11201510741TA SG11201510741TA SG11201510741TA SG11201510741TA SG 11201510741T A SG11201510741T A SG 11201510741TA SG 11201510741T A SG11201510741T A SG 11201510741TA SG 11201510741T A SG11201510741T A SG 11201510741TA SG 11201510741T A SG11201510741T A SG 11201510741TA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor devices
- devices including
- related methods
- stair step
- step structures
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/932,551 US9165937B2 (en) | 2013-07-01 | 2013-07-01 | Semiconductor devices including stair step structures, and related methods |
| PCT/US2014/044603 WO2015002837A1 (en) | 2013-07-01 | 2014-06-27 | Semiconductor devices including stair step structures, and related methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201510741TA true SG11201510741TA (en) | 2016-01-28 |
Family
ID=52114746
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201610772QA SG10201610772QA (en) | 2013-07-01 | 2014-06-27 | Semiconductor devices including stair step structures, and related methods |
| SG11201510741TA SG11201510741TA (en) | 2013-07-01 | 2014-06-27 | Semiconductor devices including stair step structures, and related methods |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201610772QA SG10201610772QA (en) | 2013-07-01 | 2014-06-27 | Semiconductor devices including stair step structures, and related methods |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9165937B2 (en) |
| EP (1) | EP3017474B1 (en) |
| JP (1) | JP5960369B1 (en) |
| KR (1) | KR101700565B1 (en) |
| CN (1) | CN105453266B (en) |
| SG (2) | SG10201610772QA (en) |
| TW (2) | TWI553833B (en) |
| WO (1) | WO2015002837A1 (en) |
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| US9165937B2 (en) | 2013-07-01 | 2015-10-20 | Micron Technology, Inc. | Semiconductor devices including stair step structures, and related methods |
| KR102075004B1 (en) * | 2013-11-11 | 2020-02-11 | 에스케이하이닉스 주식회사 | Nonvolatile memory device |
| US9142538B1 (en) * | 2014-09-18 | 2015-09-22 | Macronix International Co., Ltd. | Three-dimensional semiconductor device |
| JP6464697B2 (en) * | 2014-11-27 | 2019-02-06 | 東芝ライテック株式会社 | LIGHTING DEVICE FOR VEHICLE AND LIGHT |
| KR102309566B1 (en) * | 2015-03-20 | 2021-10-07 | 에스케이하이닉스 주식회사 | Semiconductor device |
| US10186519B2 (en) * | 2015-03-31 | 2019-01-22 | Samsung Electronics Co., Ltd. | Semiconductor memory devices |
| US10453748B2 (en) | 2015-08-27 | 2019-10-22 | Micron Technology, Inc. | Methods of forming semiconductor device structures including stair step structures |
| US9728548B2 (en) | 2015-11-16 | 2017-08-08 | Micron Technology, Inc. | Vertical memory blocks and related devices and methods |
| US9852942B2 (en) * | 2015-12-30 | 2017-12-26 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
| US10049744B2 (en) | 2016-01-08 | 2018-08-14 | Samsung Electronics Co., Ltd. | Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same |
| US9721663B1 (en) * | 2016-02-18 | 2017-08-01 | Sandisk Technologies Llc | Word line decoder circuitry under a three-dimensional memory array |
| US9589978B1 (en) * | 2016-02-25 | 2017-03-07 | Micron Technology, Inc. | Memory devices with stairs in a staircase coupled to tiers of memory cells and to pass transistors directly under the staircase |
| US10373970B2 (en) | 2016-03-02 | 2019-08-06 | Micron Technology, Inc. | Semiconductor device structures including staircase structures, and related methods and electronic systems |
| US9941209B2 (en) | 2016-03-11 | 2018-04-10 | Micron Technology, Inc. | Conductive structures, systems and devices including conductive structures and related methods |
| KR102550789B1 (en) * | 2016-03-28 | 2023-07-05 | 삼성전자주식회사 | Semiconductor device |
| US10043751B2 (en) * | 2016-03-30 | 2018-08-07 | Intel Corporation | Three dimensional storage cell array with highly dense and scalable word line design approach |
| US9905514B2 (en) * | 2016-04-11 | 2018-02-27 | Micron Technology, Inc. | Semiconductor device structures including staircase structures, and related methods and electronic systems |
| US9953993B2 (en) * | 2016-07-25 | 2018-04-24 | Toshiba Memory Corporation | Semiconductor memory device |
| US10504838B2 (en) * | 2016-09-21 | 2019-12-10 | Micron Technology, Inc. | Methods of forming a semiconductor device structure including a stair step structure |
| US10446437B2 (en) | 2016-10-10 | 2019-10-15 | Macronix International Co., Ltd. | Interlevel connectors in multilevel circuitry, and method for forming the same |
| WO2018140102A1 (en) * | 2017-01-30 | 2018-08-02 | Micron Technology, Inc. | Integrated memory assemblies comprising multiple memory array decks |
| US9953992B1 (en) * | 2017-06-01 | 2018-04-24 | Sandisk Technologies Llc | Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof |
| JP2019009382A (en) * | 2017-06-28 | 2019-01-17 | 東芝メモリ株式会社 | Semiconductor device |
| KR102428273B1 (en) * | 2017-08-01 | 2022-08-02 | 삼성전자주식회사 | Three-dimensional semiconductor device |
| CN107644876B (en) * | 2017-08-28 | 2019-01-01 | 长江存储科技有限责任公司 | Step structure and forming method thereof |
| US10373904B2 (en) * | 2017-08-28 | 2019-08-06 | Micron Technology, Inc. | Semiconductor devices including capacitors, related electronic systems, and related methods |
| JP6863864B2 (en) * | 2017-09-08 | 2021-04-21 | キオクシア株式会社 | Storage device |
| KR102587973B1 (en) * | 2017-11-07 | 2023-10-12 | 삼성전자주식회사 | Three-dimensional semiconductor devices |
| KR102403732B1 (en) * | 2017-11-07 | 2022-05-30 | 삼성전자주식회사 | 3D nonvolatile memory device |
| US10269625B1 (en) | 2017-12-28 | 2019-04-23 | Micron Technology, Inc. | Methods of forming semiconductor structures having stair step structures |
| US11342351B2 (en) | 2018-01-10 | 2022-05-24 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor device |
| KR102630926B1 (en) * | 2018-01-26 | 2024-01-30 | 삼성전자주식회사 | Three-dimensional semiconductor memory device |
| JP7338975B2 (en) * | 2018-02-12 | 2023-09-05 | 三星電子株式会社 | semiconductor memory device |
| KR102639721B1 (en) | 2018-04-13 | 2024-02-26 | 삼성전자주식회사 | Three-dimensional semiconductor memory devices |
| JP2019201038A (en) | 2018-05-14 | 2019-11-21 | 東芝メモリ株式会社 | Semiconductor device and method of manufacturing the same |
| US11114379B2 (en) | 2018-06-01 | 2021-09-07 | Micron Technology, Inc. | Integrated circuitry, memory integrated circuitry, and methods used in forming integrated circuitry |
| KR102573272B1 (en) | 2018-06-22 | 2023-09-01 | 삼성전자주식회사 | Three-dimensional semiconductor memory device |
| US10580791B1 (en) | 2018-08-21 | 2020-03-03 | Micron Technology, Inc. | Semiconductor device structures, semiconductor devices, and electronic systems |
| KR102517334B1 (en) | 2019-03-19 | 2023-04-03 | 삼성전자주식회사 | Semiconductor device including selector |
| US10847526B1 (en) | 2019-07-26 | 2020-11-24 | Micron Technology, Inc. | Microelectronic devices including staircase structures, and related memory devices and electronic systems |
| US11217601B2 (en) * | 2019-10-29 | 2022-01-04 | Micron Technology, Inc. | Microelectronic devices including staircase structures, and related memory devices and electronic systems |
| US10978478B1 (en) * | 2019-12-17 | 2021-04-13 | Micron Technology, Inc. | Block-on-block memory array architecture using bi-directional staircases |
| CN111108600B (en) * | 2019-12-24 | 2022-07-08 | 长江存储科技有限责任公司 | Three-dimensional memory device and method of forming the same |
| US11302634B2 (en) | 2020-02-13 | 2022-04-12 | Micron Technology, Inc. | Microelectronic devices with symmetrically distributed staircase stadiums and related systems and methods |
| KR20210141563A (en) * | 2020-03-23 | 2021-11-23 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | Staircase structure of three-dimensional memory device and method of forming the same |
| EP3953969A4 (en) * | 2020-06-05 | 2022-08-03 | Yangtze Memory Technologies Co., Ltd. | Staircase structure in three-dimensional memory device and method for forming the same |
| US11437318B2 (en) | 2020-06-12 | 2022-09-06 | Micron Technology, Inc. | Microelectronic devices including staircase structures, and related memory devices and electronic systems |
| US11647636B2 (en) * | 2020-06-17 | 2023-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory devices |
| US11744080B2 (en) * | 2020-07-23 | 2023-08-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional memory device with word lines extending through sub-arrays, semiconductor device including the same and method for manufacturing the same |
| CN112740402B (en) * | 2020-12-25 | 2024-04-19 | 长江存储科技有限责任公司 | Three-dimensional memory device with source electrode selection gate incision structure and forming method thereof |
| WO2022133990A1 (en) | 2020-12-25 | 2022-06-30 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory device having source-select-gate cut structures and methods for forming the same |
| US11894056B2 (en) | 2022-02-22 | 2024-02-06 | Sandisk Technologies Llc | Non-volatile memory with efficient word line hook-up |
| CN117727689A (en) * | 2022-09-09 | 2024-03-19 | 长鑫存储技术有限公司 | Semiconductor structure and method for manufacturing semiconductor structure |
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| US7177191B2 (en) | 2004-12-30 | 2007-02-13 | Sandisk 3D Llc | Integrated circuit including memory array incorporating multiple types of NAND string structures |
| JP5016832B2 (en) | 2006-03-27 | 2012-09-05 | 株式会社東芝 | Nonvolatile semiconductor memory device and manufacturing method thereof |
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| KR101434588B1 (en) | 2008-06-11 | 2014-08-29 | 삼성전자주식회사 | Semiconductor Device And Method Of Fabricating The Same |
| JP5330017B2 (en) | 2009-02-17 | 2013-10-30 | 株式会社東芝 | Nonvolatile semiconductor memory device and manufacturing method thereof |
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| KR101713228B1 (en) | 2010-06-24 | 2017-03-07 | 삼성전자주식회사 | Semiconductor memory devices having asymmetric wordline pads |
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| TWI490862B (en) * | 2011-01-19 | 2015-07-01 | Macronix Int Co Ltd | Memory architecture of 3d array with improved uniformity of bit line capacitances |
| US8374051B2 (en) | 2011-03-03 | 2013-02-12 | Sandisk 3D Llc | Three dimensional memory system with column pipeline |
| KR101855324B1 (en) * | 2011-05-04 | 2018-05-09 | 삼성전자주식회사 | Three dimmensional semiconductor memory deivces and methods of fabricating the same |
| US8530350B2 (en) * | 2011-06-02 | 2013-09-10 | Micron Technology, Inc. | Apparatuses including stair-step structures and methods of forming the same |
| US8956968B2 (en) * | 2011-11-21 | 2015-02-17 | Sandisk Technologies Inc. | Method for fabricating a metal silicide interconnect in 3D non-volatile memory |
| US8501609B2 (en) | 2012-02-02 | 2013-08-06 | Tower Semiconductor Ltd. | Method for generating a three-dimensional NAND memory with mono-crystalline channels using sacrificial material |
| US8704205B2 (en) * | 2012-08-24 | 2014-04-22 | Macronix International Co., Ltd. | Semiconductor structure with improved capacitance of bit line |
| US9111591B2 (en) * | 2013-02-22 | 2015-08-18 | Micron Technology, Inc. | Interconnections for 3D memory |
| US9165937B2 (en) | 2013-07-01 | 2015-10-20 | Micron Technology, Inc. | Semiconductor devices including stair step structures, and related methods |
-
2013
- 2013-07-01 US US13/932,551 patent/US9165937B2/en active Active
-
2014
- 2014-06-27 KR KR1020167001989A patent/KR101700565B1/en active IP Right Grant
- 2014-06-27 EP EP14820536.2A patent/EP3017474B1/en active Active
- 2014-06-27 TW TW103122380A patent/TWI553833B/en active
- 2014-06-27 SG SG10201610772QA patent/SG10201610772QA/en unknown
- 2014-06-27 SG SG11201510741TA patent/SG11201510741TA/en unknown
- 2014-06-27 TW TW105125830A patent/TWI652801B/en active
- 2014-06-27 WO PCT/US2014/044603 patent/WO2015002837A1/en active Application Filing
- 2014-06-27 JP JP2015563030A patent/JP5960369B1/en active Active
- 2014-06-27 CN CN201480038462.0A patent/CN105453266B/en active Active
-
2015
- 2015-10-08 US US14/877,997 patent/US9659950B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI553833B (en) | 2016-10-11 |
| US20160027793A1 (en) | 2016-01-28 |
| WO2015002837A1 (en) | 2015-01-08 |
| KR20160014783A (en) | 2016-02-11 |
| EP3017474A1 (en) | 2016-05-11 |
| CN105453266B (en) | 2020-03-13 |
| US9659950B2 (en) | 2017-05-23 |
| JP5960369B1 (en) | 2016-08-02 |
| CN105453266A (en) | 2016-03-30 |
| TW201642446A (en) | 2016-12-01 |
| TW201511236A (en) | 2015-03-16 |
| KR101700565B1 (en) | 2017-01-26 |
| EP3017474A4 (en) | 2017-03-15 |
| JP2016526782A (en) | 2016-09-05 |
| US9165937B2 (en) | 2015-10-20 |
| EP3017474B1 (en) | 2021-05-26 |
| US20150001613A1 (en) | 2015-01-01 |
| TWI652801B (en) | 2019-03-01 |
| SG10201610772QA (en) | 2017-02-27 |
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