SG10201405677QA - Methods of forming finfet semiconductor devices using a replacement gate technique and the resulting devices - Google Patents
Methods of forming finfet semiconductor devices using a replacement gate technique and the resulting devicesInfo
- Publication number
- SG10201405677QA SG10201405677QA SG10201405677QA SG10201405677QA SG10201405677QA SG 10201405677Q A SG10201405677Q A SG 10201405677QA SG 10201405677Q A SG10201405677Q A SG 10201405677QA SG 10201405677Q A SG10201405677Q A SG 10201405677QA SG 10201405677Q A SG10201405677Q A SG 10201405677QA
- Authority
- SG
- Singapore
- Prior art keywords
- devices
- methods
- replacement gate
- gate technique
- finfet semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/044,120 US9236480B2 (en) | 2013-10-02 | 2013-10-02 | Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201405677QA true SG10201405677QA (en) | 2015-05-28 |
Family
ID=52673417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201405677QA SG10201405677QA (en) | 2013-10-02 | 2014-09-12 | Methods of forming finfet semiconductor devices using a replacement gate technique and the resulting devices |
Country Status (5)
Country | Link |
---|---|
US (2) | US9236480B2 (en) |
CN (1) | CN104517859B (en) |
DE (1) | DE102014219912B4 (en) |
SG (1) | SG10201405677QA (en) |
TW (1) | TWI576922B (en) |
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US9812336B2 (en) * | 2013-10-29 | 2017-11-07 | Globalfoundries Inc. | FinFET semiconductor structures and methods of fabricating same |
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KR102276642B1 (en) * | 2014-07-28 | 2021-07-15 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
US9653605B2 (en) | 2014-10-17 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field effect transistor (FinFET) device and method for forming the same |
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TWI652824B (en) | 2015-04-13 | 2019-03-01 | 聯華電子股份有限公司 | Semiconductor structure and process thereof |
US20160372600A1 (en) * | 2015-06-19 | 2016-12-22 | International Business Machines Corporation | Contact-first field-effect transistors |
US9379025B1 (en) * | 2015-06-19 | 2016-06-28 | International Business Machines Corporation | Method of forming source/drain contacts in unmerged FinFETs |
CN108028268B (en) * | 2015-08-07 | 2021-01-01 | 东京毅力科创株式会社 | Patterning method without dummy gate |
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US9853110B2 (en) | 2015-10-30 | 2017-12-26 | Globalfoundries Inc. | Method of forming a gate contact structure for a semiconductor device |
US9960273B2 (en) * | 2015-11-16 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit structure with substrate isolation and un-doped channel |
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CN107154457B (en) * | 2016-03-03 | 2019-12-10 | 华邦电子股份有限公司 | Electrode manufacturing method and resistance random access memory |
CN107275214A (en) * | 2016-04-08 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor devices and forming method thereof |
US9799751B1 (en) * | 2016-04-19 | 2017-10-24 | Globalfoundries Inc. | Methods of forming a gate structure on a vertical transistor device |
US10276674B2 (en) | 2016-06-28 | 2019-04-30 | Globalfoundries Inc. | Method of forming a gate contact structure and source/drain contact structure for a semiconductor device |
US9793160B1 (en) * | 2016-07-03 | 2017-10-17 | International Business Machines Coporation | Aggressive tip-to-tip scaling using subtractive integraton |
US9824921B1 (en) * | 2016-07-06 | 2017-11-21 | Globalfoundries Inc. | Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps |
US9941278B2 (en) * | 2016-07-06 | 2018-04-10 | Globalfoundries Inc. | Method and apparatus for placing a gate contact inside an active region of a semiconductor |
US9653583B1 (en) * | 2016-08-02 | 2017-05-16 | Globalfoundries Inc. | Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices |
KR102460862B1 (en) * | 2016-08-04 | 2022-10-28 | 삼성전자주식회사 | Semiconductor device |
US10347745B2 (en) | 2016-09-19 | 2019-07-09 | Globalfoundries Inc. | Methods of forming bottom and top source/drain regions on a vertical transistor device |
US10170616B2 (en) | 2016-09-19 | 2019-01-01 | Globalfoundries Inc. | Methods of forming a vertical transistor device |
US9882025B1 (en) | 2016-09-30 | 2018-01-30 | Globalfoundries Inc. | Methods of simultaneously forming bottom and top spacers on a vertical transistor device |
US9966456B1 (en) | 2016-11-08 | 2018-05-08 | Globalfoundries Inc. | Methods of forming gate electrodes on a vertical transistor device |
US9935018B1 (en) | 2017-02-17 | 2018-04-03 | Globalfoundries Inc. | Methods of forming vertical transistor devices with different effective gate lengths |
US10229999B2 (en) | 2017-02-28 | 2019-03-12 | Globalfoundries Inc. | Methods of forming upper source/drain regions on a vertical transistor device |
US10014370B1 (en) | 2017-04-19 | 2018-07-03 | Globalfoundries Inc. | Air gap adjacent a bottom source/drain region of vertical transistor device |
US10056303B1 (en) * | 2017-04-21 | 2018-08-21 | Globalfoundries Inc. | Integration scheme for gate height control and void free RMG fill |
US10269983B2 (en) * | 2017-05-09 | 2019-04-23 | Globalfoundries Inc. | Stacked nanosheet field-effect transistor with air gap spacers |
US10355134B2 (en) * | 2017-05-23 | 2019-07-16 | Qualcomm Incorporated | Metal-oxide semiconductor (MOS) device with thick oxide |
US10529833B2 (en) * | 2017-08-28 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit with a fin and gate structure and method making the same |
US10943830B2 (en) * | 2017-08-30 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned structure for semiconductor devices |
US10679988B2 (en) | 2017-09-18 | 2020-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including FinFETS having different channel heights and manufacturing method thereof |
US10483369B2 (en) * | 2017-10-30 | 2019-11-19 | Globalfoundries Inc. | Methods of forming replacement gate structures on transistor devices |
US10453936B2 (en) | 2017-10-30 | 2019-10-22 | Globalfoundries Inc. | Methods of forming replacement gate structures on transistor devices |
US20190139830A1 (en) * | 2017-11-03 | 2019-05-09 | Globalfoundries Inc. | Self-aligned gate isolation |
US10600914B2 (en) | 2018-01-12 | 2020-03-24 | Globalfoundries Inc. | Isolation pillar first gate structures and methods of forming same |
US20190259618A1 (en) * | 2018-02-19 | 2019-08-22 | Stmicroelectronics (Crolles 2) Sas | Process for forming a layer of a work function metal for a mosfet gate having a uniaxial grain orientation |
CN110648967A (en) * | 2018-06-26 | 2020-01-03 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor structure and forming method thereof |
US11264288B2 (en) * | 2018-09-28 | 2022-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate structure and patterning method |
US11195754B2 (en) * | 2018-10-09 | 2021-12-07 | International Business Machines Corporation | Transistor with reduced gate resistance and improved process margin of forming self-aligned contact |
CN113327856B (en) * | 2020-02-28 | 2023-03-24 | 中芯国际集成电路制造(天津)有限公司 | Semiconductor structure and forming method thereof |
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KR100560818B1 (en) * | 2004-06-02 | 2006-03-13 | 삼성전자주식회사 | A semiconductor device and method for fabricating the same |
US7105934B2 (en) * | 2004-08-30 | 2006-09-12 | International Business Machines Corporation | FinFET with low gate capacitance and low extrinsic resistance |
US7863713B2 (en) * | 2005-12-22 | 2011-01-04 | Tohoku University | Semiconductor device |
US8053318B2 (en) * | 2009-06-25 | 2011-11-08 | International Business Machines Corporation | FET with replacement gate structure and method of fabricating the same |
US8138543B2 (en) * | 2009-11-18 | 2012-03-20 | International Business Machines Corporation | Hybrid FinFET/planar SOI FETs |
DE102010064283B4 (en) * | 2010-12-28 | 2012-12-27 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG | A method of making a self-aligned land transistor on a bulk substrate by a late land etch |
US8921940B2 (en) * | 2013-03-15 | 2014-12-30 | Samsung Electronics Co., Ltd. | Semiconductor device and a method for fabricating the same |
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2013
- 2013-10-02 US US14/044,120 patent/US9236480B2/en active Active
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2014
- 2014-09-12 SG SG10201405677QA patent/SG10201405677QA/en unknown
- 2014-10-01 DE DE102014219912.3A patent/DE102014219912B4/en active Active
- 2014-10-01 TW TW103134170A patent/TWI576922B/en active
- 2014-10-08 CN CN201410524980.5A patent/CN104517859B/en not_active Expired - Fee Related
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2015
- 2015-12-08 US US14/962,015 patent/US9773867B2/en active Active
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US9236480B2 (en) | 2016-01-12 |
DE102014219912A1 (en) | 2015-04-02 |
US9773867B2 (en) | 2017-09-26 |
US20160093692A1 (en) | 2016-03-31 |
US20150091100A1 (en) | 2015-04-02 |
CN104517859A (en) | 2015-04-15 |
TWI576922B (en) | 2017-04-01 |
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CN104517859B (en) | 2017-11-24 |
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