SG11201601319QA - Ge and iii-v channel semiconductor devices having maximized compliance and free surface relaxation - Google Patents
Ge and iii-v channel semiconductor devices having maximized compliance and free surface relaxationInfo
- Publication number
- SG11201601319QA SG11201601319QA SG11201601319QA SG11201601319QA SG11201601319QA SG 11201601319Q A SG11201601319Q A SG 11201601319QA SG 11201601319Q A SG11201601319Q A SG 11201601319QA SG 11201601319Q A SG11201601319Q A SG 11201601319QA SG 11201601319Q A SG11201601319Q A SG 11201601319QA
- Authority
- SG
- Singapore
- Prior art keywords
- iii
- semiconductor devices
- free surface
- channel semiconductor
- surface relaxation
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10252—Germanium [Ge]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2013/062447 WO2015047342A1 (en) | 2013-09-27 | 2013-09-27 | Ge and iii-v channel semiconductor devices having maximized compliance and free surface relaxation |
Publications (1)
Publication Number | Publication Date |
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SG11201601319QA true SG11201601319QA (en) | 2016-03-30 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SG11201601319QA SG11201601319QA (en) | 2013-09-27 | 2013-09-27 | Ge and iii-v channel semiconductor devices having maximized compliance and free surface relaxation |
Country Status (7)
Country | Link |
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US (2) | US9570614B2 (en) |
EP (1) | EP3050091B1 (en) |
KR (1) | KR102135306B1 (en) |
CN (2) | CN110071168B (en) |
SG (1) | SG11201601319QA (en) |
TW (2) | TWI600152B (en) |
WO (1) | WO2015047342A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3050111A4 (en) * | 2013-09-27 | 2017-06-07 | Intel Corporation | Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon |
KR20210040176A (en) * | 2013-09-27 | 2021-04-12 | 인텔 코포레이션 | Non-planar i/o and logic semiconductor devices having different workfunction on common substrate |
US20150123211A1 (en) * | 2013-11-04 | 2015-05-07 | Globalfoundries Inc. | NARROW DIFFUSION BREAK FOR A FIN FIELD EFFECT (FinFET) TRANSISTOR DEVICE |
US9263555B2 (en) * | 2014-07-03 | 2016-02-16 | Globalfoundries Inc. | Methods of forming a channel region for a semiconductor device by performing a triple cladding process |
US11004985B2 (en) | 2016-05-30 | 2021-05-11 | Samsung Electronics Co., Ltd. | Semiconductor device having multi-thickness nanowire |
KR20170135115A (en) * | 2016-05-30 | 2017-12-08 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6359233B1 (en) * | 1999-10-26 | 2002-03-19 | Intel Corporation | Printed circuit board multipack structure having internal gold fingers and multipack and printed circuit board formed therefrom, and methods of manufacture thereof |
JP4772262B2 (en) * | 2000-06-05 | 2011-09-14 | フーバー ウント ズーナー アーゲー | Method for assembly of an optical plug connector, apparatus for carrying out this method and plug connector for use in such a method |
US6800910B2 (en) * | 2002-09-30 | 2004-10-05 | Advanced Micro Devices, Inc. | FinFET device incorporating strained silicon in the channel region |
US6943407B2 (en) * | 2003-06-17 | 2005-09-13 | International Business Machines Corporation | Low leakage heterojunction vertical transistors and high performance devices thereof |
US6855588B1 (en) * | 2003-10-07 | 2005-02-15 | United Microelectronics Corp. | Method of fabricating a double gate MOSFET device |
US7153734B2 (en) * | 2003-12-29 | 2006-12-26 | Intel Corporation | CMOS device with metal and silicide gate electrodes and a method for making it |
US7393733B2 (en) * | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US7494858B2 (en) * | 2005-06-30 | 2009-02-24 | Intel Corporation | Transistor with improved tip profile and method of manufacture thereof |
US7338834B2 (en) * | 2006-03-17 | 2008-03-04 | Acorn Technologies, Inc. | Strained silicon with elastic edge relaxation |
KR100764360B1 (en) * | 2006-04-28 | 2007-10-08 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabricating the same |
US7897493B2 (en) * | 2006-12-08 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inducement of strain in a semiconductor layer |
JP2009016462A (en) * | 2007-07-03 | 2009-01-22 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
US7879659B2 (en) | 2007-07-17 | 2011-02-01 | Micron Technology, Inc. | Methods of fabricating semiconductor devices including dual fin structures |
KR100902105B1 (en) * | 2007-11-09 | 2009-06-09 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
US20090206404A1 (en) | 2008-02-15 | 2009-08-20 | Ravi Pillarisetty | Reducing external resistance of a multi-gate device by silicidation |
KR100968151B1 (en) * | 2008-05-06 | 2010-07-06 | 주식회사 하이닉스반도체 | Semiconductor device with channel of FIN structure and the method for manufacturing the same |
US8110877B2 (en) * | 2008-12-19 | 2012-02-07 | Intel Corporation | Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions |
US8816391B2 (en) * | 2009-04-01 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain engineering of devices with high-mobility channels |
CN101908543B (en) * | 2009-06-02 | 2016-06-22 | 台湾积体电路制造股份有限公司 | Integrated circuit structure |
US8373238B2 (en) * | 2009-12-03 | 2013-02-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs with multiple Fin heights |
US20110147840A1 (en) * | 2009-12-23 | 2011-06-23 | Cea Stephen M | Wrap-around contacts for finfet and tri-gate devices |
US8313999B2 (en) * | 2009-12-23 | 2012-11-20 | Intel Corporation | Multi-gate semiconductor device with self-aligned epitaxial source and drain |
US8169025B2 (en) * | 2010-01-19 | 2012-05-01 | International Business Machines Corporation | Strained CMOS device, circuit and method of fabrication |
US8278703B2 (en) * | 2010-02-08 | 2012-10-02 | Micron Technology, Inc. | Cross-hair cell based floating body device |
DE102011004506B4 (en) * | 2011-02-22 | 2012-10-18 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | A method of fabricating a semiconductor device and semiconductor device as a fin transistor fabricated on a patterned STI region by a late stage etch |
US9761666B2 (en) * | 2011-06-16 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel field effect transistor |
US9293377B2 (en) * | 2011-07-15 | 2016-03-22 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device structure and method for manufacturing the same |
US9190261B2 (en) * | 2011-08-25 | 2015-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layer alignment in FinFET fabrication |
US8890207B2 (en) * | 2011-09-06 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET design controlling channel thickness |
JP2013077753A (en) * | 2011-09-30 | 2013-04-25 | Sumitomo Electric Device Innovations Inc | Semiconductor laser and manufacturing method thereof |
CN102519999B (en) * | 2011-11-11 | 2015-12-16 | 中国石油大学(北京) | Magnetic nuclear resonance analyzer and nuclear magnetic resonance measuring method |
US9355209B2 (en) * | 2011-11-17 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Revising layout design through OPC to reduce corner rounding effect |
US8901615B2 (en) * | 2012-06-13 | 2014-12-02 | Synopsys, Inc. | N-channel and P-channel end-to-end finfet cell architecture |
US8847281B2 (en) * | 2012-07-27 | 2014-09-30 | Intel Corporation | High mobility strained channels for fin-based transistors |
US8927352B2 (en) * | 2013-03-08 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Channel epitaxial regrowth flow (CRF) |
US20150162435A1 (en) * | 2013-12-09 | 2015-06-11 | Globalfoundries Inc. | Asymmetric channel growth of a cladding layer over fins of a field effect transistor (finfet) device |
-
2013
- 2013-09-27 CN CN201910109659.3A patent/CN110071168B/en active Active
- 2013-09-27 KR KR1020167004101A patent/KR102135306B1/en active IP Right Grant
- 2013-09-27 WO PCT/US2013/062447 patent/WO2015047342A1/en active Application Filing
- 2013-09-27 US US14/914,102 patent/US9570614B2/en active Active
- 2013-09-27 CN CN201380079044.1A patent/CN105793967B/en active Active
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- 2013-09-27 SG SG11201601319QA patent/SG11201601319QA/en unknown
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2014
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2017
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TWI600152B (en) | 2017-09-21 |
CN110071168B (en) | 2022-08-16 |
KR20160061976A (en) | 2016-06-01 |
TWI544624B (en) | 2016-08-01 |
EP3050091B1 (en) | 2019-04-10 |
WO2015047342A1 (en) | 2015-04-02 |
US9570614B2 (en) | 2017-02-14 |
US20170125524A1 (en) | 2017-05-04 |
TW201701466A (en) | 2017-01-01 |
CN105793967A (en) | 2016-07-20 |
EP3050091A1 (en) | 2016-08-03 |
KR102135306B1 (en) | 2020-07-17 |
EP3050091A4 (en) | 2017-05-10 |
US9905651B2 (en) | 2018-02-27 |
TW201519439A (en) | 2015-05-16 |
US20160204246A1 (en) | 2016-07-14 |
CN105793967B (en) | 2019-03-12 |
CN110071168A (en) | 2019-07-30 |
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