TWI563592B - Thermal plate and substrate support assembly comprising the thermal plate and method for manufacturing the thermal plate - Google Patents

Thermal plate and substrate support assembly comprising the thermal plate and method for manufacturing the thermal plate

Info

Publication number
TWI563592B
TWI563592B TW101134516A TW101134516A TWI563592B TW I563592 B TWI563592 B TW I563592B TW 101134516 A TW101134516 A TW 101134516A TW 101134516 A TW101134516 A TW 101134516A TW I563592 B TWI563592 B TW I563592B
Authority
TW
Taiwan
Prior art keywords
thermal plate
manufacturing
substrate support
support assembly
thermal
Prior art date
Application number
TW101134516A
Other languages
English (en)
Chinese (zh)
Other versions
TW201327719A (zh
Inventor
Keith William Gaff
Keith Comendant
Anthony Ricci
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW201327719A publication Critical patent/TW201327719A/zh
Application granted granted Critical
Publication of TWI563592B publication Critical patent/TWI563592B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00—Machines, plants or systems, using electric or magnetic effects
    • F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
    • F25B21/04—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect reversible
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49083—Heater type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
TW101134516A 2011-09-21 2012-09-20 Thermal plate and substrate support assembly comprising the thermal plate and method for manufacturing the thermal plate TWI563592B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/238,396 US8461674B2 (en) 2011-09-21 2011-09-21 Thermal plate with planar thermal zones for semiconductor processing

Publications (2)

Publication Number Publication Date
TW201327719A TW201327719A (zh) 2013-07-01
TWI563592B true TWI563592B (en) 2016-12-21

Family

ID=47881062

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101134516A TWI563592B (en) 2011-09-21 2012-09-20 Thermal plate and substrate support assembly comprising the thermal plate and method for manufacturing the thermal plate
TW105130713A TWI598989B (zh) 2011-09-21 2012-09-20 熱板及具有該熱板之基板支持組件及製造該熱板的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105130713A TWI598989B (zh) 2011-09-21 2012-09-20 熱板及具有該熱板之基板支持組件及製造該熱板的方法

Country Status (7)

Country Link
US (2) US8461674B2 (enExample)
JP (1) JP6144263B2 (enExample)
KR (2) KR101822318B1 (enExample)
CN (1) CN104471682B (enExample)
SG (3) SG10201605909XA (enExample)
TW (2) TWI563592B (enExample)
WO (1) WO2013042027A2 (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428295B (zh) 2009-12-15 2020-08-11 朗姆研究公司 调节基板温度来改进关键尺寸（cd）的均匀性
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US9324589B2 (en) * 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
US9681497B2 (en) 2013-03-12 2017-06-13 Applied Materials, Inc. Multi zone heating and cooling ESC for plasma process chamber
WO2014164449A1 (en) 2013-03-13 2014-10-09 Applied Materials, Inc. Multi-zone heated esc with independent edge zones
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
TW201518538A (zh) 2013-11-11 2015-05-16 Applied Materials Inc 像素化冷卻溫度控制的基板支撐組件
US10460968B2 (en) 2013-12-02 2019-10-29 Applied Materials, Inc. Electrostatic chuck with variable pixelated magnetic field
US10217615B2 (en) * 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US9716022B2 (en) 2013-12-17 2017-07-25 Lam Research Corporation Method of determining thermal stability of a substrate support assembly
US9520315B2 (en) 2013-12-31 2016-12-13 Applied Materials, Inc. Electrostatic chuck with internal flow adjustments for improved temperature distribution
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US20150221481A1 (en) * 2014-01-31 2015-08-06 Michael D. Willwerth Electrostatic chuck with magnetic cathode liner for critical dimension (cd) tuning
US9435692B2 (en) 2014-02-05 2016-09-06 Lam Research Corporation Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9589853B2 (en) 2014-02-28 2017-03-07 Lam Research Corporation Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
US9472410B2 (en) 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
US9580360B2 (en) 2014-04-07 2017-02-28 Lam Research Corporation Monolithic ceramic component of gas delivery system and method of making and use thereof
US9543171B2 (en) 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
KR102164611B1 (ko) 2014-07-02 2020-10-12 어플라이드 머티어리얼스, 인코포레이티드 매립형 광섬유들 및 에폭시 광학 확산기들을 사용하는 기판들의 온도 제어를 위한 장치, 시스템들, 및 방법들
KR102302723B1 (ko) 2014-07-23 2021-09-14 어플라이드 머티어리얼스, 인코포레이티드 튜닝가능한 온도 제어되는 기판 지지 어셈블리
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
JP6530220B2 (ja) * 2015-03-30 2019-06-12 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法
US10453775B1 (en) * 2015-06-10 2019-10-22 SA Photonics, Inc. Distributed thermoelectric cooling system
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10386821B2 (en) 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US10381248B2 (en) 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US9779974B2 (en) 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US9864361B2 (en) 2015-06-22 2018-01-09 Lam Research Corporation Flexible temperature compensation systems and methods for substrate processing systems
JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9684754B2 (en) * 2015-10-02 2017-06-20 Arm Limited Standard cell architecture layout
US9826574B2 (en) * 2015-10-28 2017-11-21 Watlow Electric Manufacturing Company Integrated heater and sensor system
US9812342B2 (en) * 2015-12-08 2017-11-07 Watlow Electric Manufacturing Company Reduced wire count heater array block
US10845375B2 (en) * 2016-02-19 2020-11-24 Agjunction Llc Thermal stabilization of inertial measurement units
JP6226092B2 (ja) * 2016-03-14 2017-11-08 Toto株式会社 静電チャック
CN107534012B (zh) * 2016-03-29 2020-06-09 日本碍子株式会社 静电卡盘加热器
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
JP6238097B1 (ja) * 2016-07-20 2017-11-29 Toto株式会社 静電チャック
US10685861B2 (en) 2016-08-26 2020-06-16 Applied Materials, Inc. Direct optical heating of substrates through optical guide
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
KR102434561B1 (ko) * 2017-06-29 2022-08-23 주식회사 케이씨텍 기판처리장치 및 기판처리방법
KR102156365B1 (ko) * 2018-07-04 2020-09-15 (주)케이에스티이 히터가 구비된 정전척 및 그 제조방법
WO2020027993A1 (en) * 2018-08-03 2020-02-06 Applied Materials, Inc. Multizone lamp control and individual lamp control in a lamphead
KR20200023988A (ko) 2018-08-27 2020-03-06 삼성전자주식회사 정전 척 및 상기 정전 척을 탑재한 웨이퍼 식각 장치
TWI843772B (zh) 2018-12-07 2024-06-01 美商蘭姆研究公司 用於具有多工加熱器陣列之靜電卡盤的長壽命延伸溫度範圍嵌入式二極體設計
US11564292B2 (en) 2019-09-27 2023-01-24 Applied Materials, Inc. Monolithic modular microwave source with integrated temperature control
JP7316179B2 (ja) * 2019-10-04 2023-07-27 東京エレクトロン株式会社 基板支持台、及びプラズマ処理装置
JP7018978B2 (ja) * 2020-01-31 2022-02-14 株式会社日立ハイテク プラズマ処理装置
JP6900139B1 (ja) 2020-12-22 2021-07-07 株式会社浅野研究所 熱成形装置および熱成形方法
CN115210860B (zh) 2021-02-04 2025-07-15 日本碍子株式会社 半导体制造装置用构件及其制法
KR102654892B1 (ko) * 2021-07-28 2024-04-05 세메스 주식회사 지지 유닛, 가열 유닛 및 이를 포함하는 기판 처리 장치
CN116403943A (zh) * 2023-04-21 2023-07-07 江苏微导纳米科技股份有限公司 一种加热盘及其制造方法、一种半导体设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123286A (ja) * 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc 基板処理装置
US20110092072A1 (en) * 2009-10-21 2011-04-21 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US20110143462A1 (en) * 2009-12-15 2011-06-16 Lam Research Corporation Adjusting substrate temperature to improve cd uniformity

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440883A (en) 1966-12-01 1969-04-29 Monsanto Co Electronic semiconductor thermometer
JPS58153387A (ja) * 1982-03-08 1983-09-12 Toshiba Corp 温度制御装置
JPS59139654A (ja) * 1984-01-13 1984-08-10 Hitachi Ltd 温度制御回路
JPS61142743A (ja) * 1984-12-15 1986-06-30 Nec Corp 半導体の製造装置
JPH01152655A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd ペルチェ素子制御回路
JPH0487321A (ja) * 1990-07-31 1992-03-19 Japan Synthetic Rubber Co Ltd 真空処理装置の被処理物保持装置
US5536918A (en) 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
FR2682253A1 (fr) 1991-10-07 1993-04-09 Commissariat Energie Atomique Sole chauffante destinee a assurer le chauffage d'un objet dispose a sa surface et reacteur de traitement chimique muni de ladite sole.
US5255520A (en) 1991-12-20 1993-10-26 Refir Technologies Advanced thermoelectric heating and cooling system
US5414245A (en) 1992-08-03 1995-05-09 Hewlett-Packard Corporation Thermal-ink heater array using rectifying material
DE4231702C2 (de) 1992-09-22 1995-05-24 Litef Gmbh Thermoelektrische, beheizbare Kühlkammer
KR100290748B1 (ko) 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
US5504471A (en) 1993-09-16 1996-04-02 Hewlett-Packard Company Passively-multiplexed resistor array
US5667622A (en) 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
JPH09213781A (ja) 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US6095084A (en) 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5740016A (en) 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder
WO1998005060A1 (en) 1996-07-31 1998-02-05 The Board Of Trustees Of The Leland Stanford Junior University Multizone bake/chill thermal cycling module
JP3526184B2 (ja) 1997-03-17 2004-05-10 大日本スクリーン製造株式会社 基板処理装置
JP2954908B2 (ja) * 1997-09-30 1999-09-27 エスエムシー株式会社 基板の温度調整装置
US6222161B1 (en) 1998-01-12 2001-04-24 Tokyo Electron Limited Heat treatment apparatus
US5886866A (en) 1998-07-06 1999-03-23 Applied Materials, Inc. Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing
JP3892609B2 (ja) 1999-02-16 2007-03-14 株式会社東芝 ホットプレートおよび半導体装置の製造方法
DE19907497C2 (de) 1999-02-22 2003-05-28 Steag Hamatech Ag Vorrichtung und Verfahren zur Wärmebehandlung von Substraten
US6353209B1 (en) 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
US6523493B1 (en) 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
US6175175B1 (en) 1999-09-10 2001-01-16 The University Of Chicago Levitation pressure and friction losses in superconducting bearings
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
WO2001031978A1 (en) 1999-10-22 2001-05-03 Ibiden Co., Ltd. Ceramic heater
US6271459B1 (en) 2000-04-26 2001-08-07 Wafermasters, Inc. Heat management in wafer processing equipment using thermoelectric device
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
AU2002212963A1 (en) 2000-10-25 2002-05-06 Tokyo Electron Limited Method of and structure for controlling electrode temperature
WO2002071446A2 (en) 2001-03-02 2002-09-12 Tokyo Electron Limited Method and apparatus for active temperature control of susceptors
US6746616B1 (en) 2001-03-27 2004-06-08 Advanced Micro Devices, Inc. Method and apparatus for providing etch uniformity using zoned temperature control
JP2002299319A (ja) 2001-03-29 2002-10-11 Hitachi Kokusai Electric Inc 基板処理装置
US6741446B2 (en) 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
JP3582518B2 (ja) 2001-04-18 2004-10-27 住友電気工業株式会社 抵抗発熱体回路パターンとそれを用いた基板処理装置
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6795292B2 (en) 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
JP3897563B2 (ja) 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
JP2003133402A (ja) * 2001-10-26 2003-05-09 Hitachi High-Technologies Corp 試料保持装置
US6739138B2 (en) 2001-11-26 2004-05-25 Innovations Inc. Thermoelectric modules and a heating and cooling apparatus incorporating same
JP4087190B2 (ja) * 2002-02-12 2008-05-21 古河電気工業株式会社 光学装置、光学装置の起動方法及び駆動方法、並びに光通信機器
US6921724B2 (en) 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
JP3808407B2 (ja) 2002-07-05 2006-08-09 住友大阪セメント株式会社 電極内蔵型サセプタ及びその製造方法
AU2003248918A1 (en) 2002-07-11 2004-02-02 Temptronic Corporation Workpiece chuck with temperature control assembly having spacers between layers providing clearance for thermoelectric modules
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7372001B2 (en) 2002-12-17 2008-05-13 Nhk Spring Co., Ltd. Ceramics heater
US6825617B2 (en) 2003-02-27 2004-11-30 Hitachi High-Technologies Corporation Semiconductor processing apparatus
WO2004095531A2 (en) 2003-03-28 2004-11-04 Tokyo Electron Ltd Method and system for temperature control of a substrate
US6989210B2 (en) 2003-04-23 2006-01-24 Hewlett-Packard Development Company, L.P. Fuel cartridge with thermo-degradable barrier system
US8974630B2 (en) 2003-05-07 2015-03-10 Sungkyunkwan University Inductively coupled plasma processing apparatus having internal linear antenna for large area processing
US20050016465A1 (en) 2003-07-23 2005-01-27 Applied Materials, Inc. Electrostatic chuck having electrode with rounded edge
TWI247551B (en) 2003-08-12 2006-01-11 Ngk Insulators Ltd Method of manufacturing electrical resistance heating element
JP4442171B2 (ja) * 2003-09-24 2010-03-31 東京エレクトロン株式会社 熱処理装置
US20100257871A1 (en) 2003-12-11 2010-10-14 Rama Venkatasubramanian Thin film thermoelectric devices for power conversion and cooling
JP4349952B2 (ja) 2004-03-24 2009-10-21 京セラ株式会社 ウェハ支持部材とその製造方法
US7141763B2 (en) 2004-03-26 2006-11-28 Tokyo Electron Limited Method and apparatus for rapid temperature change and control
JP2005294237A (ja) 2004-04-05 2005-10-20 Aun:Kk 面状ヒーター
JP4281605B2 (ja) 2004-04-08 2009-06-17 住友電気工業株式会社 半導体加熱装置
US20050229854A1 (en) 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
US7415312B2 (en) 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
US7396431B2 (en) 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
US7475551B2 (en) 2004-12-23 2009-01-13 Nanocoolers, Inc. System employing temporal integration of thermoelectric action
JP4667158B2 (ja) 2005-08-09 2011-04-06 パナソニック株式会社 ウェーハレベルバーンイン方法
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
US8168050B2 (en) 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
JP4394667B2 (ja) 2006-08-22 2010-01-06 日本碍子株式会社 ヒータ付き静電チャックの製造方法
US7557328B2 (en) 2006-09-25 2009-07-07 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
JP4850664B2 (ja) 2006-11-02 2012-01-11 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
KR20080058109A (ko) 2006-12-21 2008-06-25 동부일렉트로닉스 주식회사 웨이퍼 가열장치 및 가열방법
US20080197015A1 (en) 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
KR100849069B1 (ko) 2007-04-20 2008-07-30 주식회사 하이닉스반도체 정전기 방전 보호 장치
US20090000738A1 (en) 2007-06-29 2009-01-01 Neil Benjamin Arrays of inductive elements for minimizing radial non-uniformity in plasma
JP4486135B2 (ja) 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP5476726B2 (ja) * 2009-01-30 2014-04-23 住友電気工業株式会社 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置
JP5239988B2 (ja) * 2009-03-24 2013-07-17 東京エレクトロン株式会社 載置台構造及び処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123286A (ja) * 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc 基板処理装置
US20110092072A1 (en) * 2009-10-21 2011-04-21 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US20110143462A1 (en) * 2009-12-15 2011-06-16 Lam Research Corporation Adjusting substrate temperature to improve cd uniformity

Also Published As

Publication number Publication date
TW201643993A (zh) 2016-12-16
KR20140063840A (ko) 2014-05-27
CN104471682B (zh) 2017-03-22
SG11201400623XA (en) 2014-04-28
US20130072035A1 (en) 2013-03-21
SG10201605905TA (en) 2016-09-29
US20130269368A1 (en) 2013-10-17
KR101643828B1 (ko) 2016-07-29
JP6144263B2 (ja) 2017-06-07
CN104471682A (zh) 2015-03-25
US8587113B2 (en) 2013-11-19
TWI598989B (zh) 2017-09-11
SG10201605909XA (en) 2016-08-30
KR20160091456A (ko) 2016-08-02
TW201327719A (zh) 2013-07-01
US8461674B2 (en) 2013-06-11
WO2013042027A3 (en) 2015-06-25
JP2015509280A (ja) 2015-03-26
WO2013042027A2 (en) 2013-03-28
KR101822318B1 (ko) 2018-01-25

Similar Documents

Publication Publication Date Title
TWI563592B (en) Thermal plate and substrate support assembly comprising the thermal plate and method for manufacturing the thermal plate
TWI562424B (en) Light-emitting panel, light-emitting device, and method for manufacturing the light-emitting panel
SG10201401901WA (en) Glass for substrate, and glass substrate
SG10201505586UA (en) Semiconductor device and method for manufacturing the same
GB201215798D0 (en) Pallet and method for manufacturing the same
EP2546871A4 (en) Heat dissipating structure and production method therefor
EP2931795A4 (en) TRANSPARENT POLYIMIDE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
SG10201606075XA (en) Opto-electronic module and method for manufacturing the same
GB2494880B (en) Layer assembly for heat exchanger
GB201222500D0 (en) Display device and method for manufacturing the same
EP2690138A4 (en) HEAT DISSIPATING ELEMENT AND METHOD FOR MANUFACTURING SAME
EP2755545A4 (en) CARRIER STRUCTURE AND METHOD FOR AN OPERATING ELEMENT
EP2704537A4 (en) WELDING SUBSTRATE, MULTIPLE WIRE SUBSTRATE AND MANUFACTURING METHOD THEREFOR
EP2624673A4 (en) INTEGRATED COMPONENT SUBSTRATE AND METHOD FOR MANUFACTURING INTEGRATED COMPONENT SUBSTRATE
PL2604869T3 (pl) Kotwa rozporowa i sposób montażu kotwy rozporowej
EP2775808A4 (en) METHOD FOR MANUFACTURING A SUBSTRATE HAVING AN INTEGRATED COMPONENT, AND SUBSTRATE HAVING AN INTEGRATED COMPONENT MANUFACTURED BY SAID METHOD
EP2785470A4 (en) PHOTONIC DEVICES ON PLANE AND CURVED SUBSTRATES AND METHODS OF MAKING SAME
GB2483405B (en) Semiconductor structure and method for manufacturing the same
EP2687756A4 (en) TRAINING TRAY AND METHOD FOR MANUFACTURING THE SAME
EP2563105A4 (en) METHOD FOR MANUFACTURING PRINTED SUBSTRATE, AND PRINTED SUBSTRATE USING THE SAME
EP2898147A4 (en) CHLOROFLUORPOLYMER-COATED SUBSTRATES AND METHOD FOR THE PRODUCTION THEREOF
GB2503639B (en) Semiconductor device structure and method for manufacturing the same
EP2624672A4 (en) METHOD FOR PRODUCING A SUBSTRATE WITH INTEGRATED COMPONENT AND SUBSTRATE PRODUCED BY THIS PROCESS WITH INTEGRATED COMPONENT
EP2674971A4 (en) Method for manufacturing heat dissipating plate for semiconductor module, said heat dissipating plate, and semiconductor module using said heat dissipating plate
ZA201303537B (en) Method for forming ground - covering layer and the ground -covering layer