TWI562240B - - Google Patents

Info

Publication number
TWI562240B
TWI562240B TW104129332A TW104129332A TWI562240B TW I562240 B TWI562240 B TW I562240B TW 104129332 A TW104129332 A TW 104129332A TW 104129332 A TW104129332 A TW 104129332A TW I562240 B TWI562240 B TW I562240B
Authority
TW
Taiwan
Application number
TW104129332A
Other languages
Chinese (zh)
Other versions
TW201546905A (zh
Inventor
Hideto Yamaguchi
Tetsuya Kosugi
Masaaki Ueno
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201546905A publication Critical patent/TW201546905A/zh
Application granted granted Critical
Publication of TWI562240B publication Critical patent/TWI562240B/zh

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW104129332A 2012-09-25 2013-09-09 熱電偶支撐體、基板處理裝置、溫度檢測方法及半導體裝置之製造方法 TW201546905A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012210264A JP6080451B2 (ja) 2012-09-25 2012-09-25 基板処理装置、半導体装置の製造方法、及び熱電対支持体

Publications (2)

Publication Number Publication Date
TW201546905A TW201546905A (zh) 2015-12-16
TWI562240B true TWI562240B (US07223432-20070529-C00017.png) 2016-12-11

Family

ID=50547606

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104129332A TW201546905A (zh) 2012-09-25 2013-09-09 熱電偶支撐體、基板處理裝置、溫度檢測方法及半導體裝置之製造方法
TW102132387A TWI511203B (zh) 2012-09-25 2013-09-09 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a temperature detection method

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102132387A TWI511203B (zh) 2012-09-25 2013-09-09 A substrate processing apparatus, a manufacturing method of a semiconductor device, and a temperature detection method

Country Status (4)

Country Link
US (3) US20140120636A1 (US07223432-20070529-C00017.png)
JP (1) JP6080451B2 (US07223432-20070529-C00017.png)
KR (2) KR101543375B1 (US07223432-20070529-C00017.png)
TW (2) TW201546905A (US07223432-20070529-C00017.png)

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US20140134838A1 (en) * 2012-11-09 2014-05-15 Primestar Solar, Inc. Methods of annealing a conductive transparent oxide film layer for use in a thin film photovoltaic device
US9700951B2 (en) * 2014-05-28 2017-07-11 Hakko Corporation Heater sensor complex with high thermal capacity
JP6333126B2 (ja) 2014-08-29 2018-05-30 東京エレクトロン株式会社 磁気アニール装置及び磁気アニール方法
DE102014119593A1 (de) * 2014-12-23 2016-06-23 Endress + Hauser Wetzer Gmbh + Co. Kg Temperaturfühler
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
JP6579974B2 (ja) 2015-02-25 2019-09-25 株式会社Kokusai Electric 基板処理装置、温度センサ及び半導体装置の製造方法
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
JP6857156B2 (ja) 2017-07-14 2021-04-14 株式会社Kokusai Electric 基板処理装置、基板保持具及び半導体装置の製造方法
KR20190008101A (ko) 2017-07-14 2019-01-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 보지구 및 반도체 장치의 제조 방법
US10998205B2 (en) * 2018-09-14 2021-05-04 Kokusai Electric Corporation Substrate processing apparatus and manufacturing method of semiconductor device
WO2020059722A1 (ja) 2018-09-18 2020-03-26 株式会社Kokusai Electric 基板処理装置、温度制御システム及び半導体装置の製造方法
WO2020145183A1 (ja) * 2019-01-07 2020-07-16 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびヒータユニット
KR20220119670A (ko) * 2020-03-02 2022-08-30 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 처리 방법, 프로그램 및 반도체 장치의 제조 방법
JP6916920B1 (ja) * 2020-03-04 2021-08-11 株式会社Kokusai Electric 基板処理装置、治具、半導体装置の製造方法および基板処理装置の校正方法
TWI736449B (zh) * 2020-10-19 2021-08-11 中國鋼鐵股份有限公司 熱電偶之修復與固定裝置及其使用方法
CN114527009B (zh) * 2022-02-09 2023-07-04 南京钢铁股份有限公司 一种在热模拟试验机上熔化凝固过程控制方法

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JPS63121431U (US07223432-20070529-C00017.png) * 1987-01-30 1988-08-05
JP2006173531A (ja) * 2004-12-20 2006-06-29 Hitachi Kokusai Electric Inc 基板処理装置
TW201140699A (en) * 2006-03-07 2011-11-16 Hitachi Int Electric Inc Substrate processing device and substrate processing method thereof

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US20090095422A1 (en) * 2007-09-06 2009-04-16 Hitachi Kokusai Electric Inc. Semiconductor manufacturing apparatus and substrate processing method
KR101097945B1 (ko) * 2007-10-19 2011-12-22 가부시키가이샤 히다치 고쿠사이 덴키 온도 제어 방법, 온도 보정치 취득 방법, 반도체 디바이스를 제조하기 위한 방법, 기판 처리 장치
US7946762B2 (en) * 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
JP5647502B2 (ja) * 2010-02-23 2014-12-24 株式会社日立国際電気 熱処理装置、半導体装置の製造方法及び基板処理方法。
KR101172376B1 (ko) * 2010-06-11 2012-08-08 한국수력원자력 주식회사 외장 열전대를 이용한 용융금속 액위 측정 장치
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JP5980551B2 (ja) * 2011-07-13 2016-08-31 株式会社日立国際電気 温度検出部、基板処理装置、及び半導体装置の製造方法

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JPS63121431U (US07223432-20070529-C00017.png) * 1987-01-30 1988-08-05
JP2006173531A (ja) * 2004-12-20 2006-06-29 Hitachi Kokusai Electric Inc 基板処理装置
TW201140699A (en) * 2006-03-07 2011-11-16 Hitachi Int Electric Inc Substrate processing device and substrate processing method thereof

Also Published As

Publication number Publication date
TWI511203B (zh) 2015-12-01
US11049742B2 (en) 2021-06-29
JP6080451B2 (ja) 2017-02-15
KR20140039987A (ko) 2014-04-02
KR101543375B1 (ko) 2015-08-11
KR101579501B1 (ko) 2015-12-22
US20190355630A1 (en) 2019-11-21
KR20150035904A (ko) 2015-04-07
TW201546905A (zh) 2015-12-16
JP2014067766A (ja) 2014-04-17
TW201421585A (zh) 2014-06-01
US20140120636A1 (en) 2014-05-01
US10418293B2 (en) 2019-09-17
US20180040520A1 (en) 2018-02-08

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