TWI562226B - Techniques for plasma processing a substrate - Google Patents

Techniques for plasma processing a substrate

Info

Publication number
TWI562226B
TWI562226B TW100120409A TW100120409A TWI562226B TW I562226 B TWI562226 B TW I562226B TW 100120409 A TW100120409 A TW 100120409A TW 100120409 A TW100120409 A TW 100120409A TW I562226 B TWI562226 B TW I562226B
Authority
TW
Taiwan
Prior art keywords
techniques
substrate
plasma processing
plasma
processing
Prior art date
Application number
TW100120409A
Other languages
English (en)
Chinese (zh)
Other versions
TW201203357A (en
Inventor
Helen L Maynard
Kamal Hadidi
Vikram Singh
Timothy J Miller
Ludovic Godet
George D Papasouliotis
Bernard G Lindsay
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW201203357A publication Critical patent/TW201203357A/zh
Application granted granted Critical
Publication of TWI562226B publication Critical patent/TWI562226B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW100120409A 2010-06-11 2011-06-10 Techniques for plasma processing a substrate TWI562226B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35395310P 2010-06-11 2010-06-11
US13/157,005 US9123509B2 (en) 2007-06-29 2011-06-09 Techniques for plasma processing a substrate

Publications (2)

Publication Number Publication Date
TW201203357A TW201203357A (en) 2012-01-16
TWI562226B true TWI562226B (en) 2016-12-11

Family

ID=44513334

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100120409A TWI562226B (en) 2010-06-11 2011-06-10 Techniques for plasma processing a substrate

Country Status (6)

Country Link
US (1) US9123509B2 (enExample)
JP (1) JP5896572B2 (enExample)
KR (1) KR101811364B1 (enExample)
CN (1) CN103109342B (enExample)
TW (1) TWI562226B (enExample)
WO (1) WO2011156813A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI756234B (zh) * 2016-06-29 2022-03-01 美商應用材料股份有限公司 使用材料變性及rf脈衝的選擇性蝕刻
TWI769447B (zh) * 2019-05-10 2022-07-01 大陸商中微半導體設備（上海）股份有限公司 多頻率多階段的電漿射頻輸出的方法及其裝置

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
US20120000606A1 (en) * 2010-07-02 2012-01-05 Varian Semiconductor Equipment Associates, Inc. Plasma uniformity system and method
US8742373B2 (en) * 2010-12-10 2014-06-03 Varian Semiconductor Equipment Associates, Inc. Method of ionization
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US8815720B2 (en) 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece
US8288741B1 (en) * 2011-08-16 2012-10-16 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for three dimensional ion processing
US8735291B2 (en) * 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8692468B2 (en) * 2011-10-03 2014-04-08 Varian Semiconductor Equipment Associates, Inc. Transformer-coupled RF source for plasma processing tool
US8822913B2 (en) * 2011-12-06 2014-09-02 Fei Company Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions
TWI513843B (zh) * 2012-01-12 2015-12-21 Hon Hai Prec Ind Co Ltd 蓋體
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP2014053452A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体装置の製造方法
US9006065B2 (en) * 2012-10-09 2015-04-14 Advanced Ion Beam Technology, Inc. Plasma doping a non-planar semiconductor device
US8916056B2 (en) * 2012-10-11 2014-12-23 Varian Semiconductor Equipment Associates, Inc. Biasing system for a plasma processing apparatus
US8736377B2 (en) * 2012-10-30 2014-05-27 Mks Instruments, Inc. RF pulse edge shaping
CN102931052B (zh) * 2012-11-05 2015-05-13 中微半导体设备(上海)有限公司 一种脉冲射频输出功率控制反应等离子体刻蚀的方法
JP6002556B2 (ja) * 2012-11-27 2016-10-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
US10821542B2 (en) * 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
US9441290B2 (en) * 2013-05-29 2016-09-13 Varian Semiconductor Equipment Associates, Inc. System and method of improving implant quality in a plasma-based implant system
BE1021288B1 (nl) * 2013-10-07 2015-10-20 Europlasma Nv Verbeterde manieren om plasma te genereren op continue vermogens wijze voor lage druk plasma processen
CN108922844A (zh) 2013-11-06 2018-11-30 应用材料公司 通过dc偏压调制的颗粒产生抑制器
JP2015105398A (ja) * 2013-11-29 2015-06-08 三井造船株式会社 皮膜形成装置及び皮膜形成方法
JP6223875B2 (ja) * 2014-03-14 2017-11-01 三井造船株式会社 皮膜形成装置、皮膜形成方法、及び皮膜付筒部材
JP6234860B2 (ja) * 2014-03-25 2017-11-22 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置および成膜方法
US9852902B2 (en) * 2014-10-03 2017-12-26 Applied Materials, Inc. Material deposition for high aspect ratio structures
US9887067B2 (en) 2014-12-03 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
US9450078B1 (en) 2015-04-03 2016-09-20 Advanced Ion Beam Technology, Inc. Forming punch-through stopper regions in finFET devices
JP6518505B2 (ja) * 2015-05-12 2019-05-22 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9734991B2 (en) * 2015-07-28 2017-08-15 Varian Semiconductor Equipment Associates, Inc. Negative ribbon ion beams from pulsed plasmas
CN207852935U (zh) * 2015-08-03 2018-09-11 株式会社村田制作所 天线装置以及电子设备
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
JP6670692B2 (ja) * 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US9788405B2 (en) * 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) * 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9767991B2 (en) * 2015-11-04 2017-09-19 Lam Research Corporation Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication
US10121708B2 (en) * 2015-11-17 2018-11-06 Lam Research Corporation Systems and methods for detection of plasma instability by optical diagnosis
JP6693099B2 (ja) * 2015-11-30 2020-05-13 ブラザー工業株式会社 成膜方法、成膜装置及び成膜プログラム
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US10410873B2 (en) 2016-01-20 2019-09-10 Tokyo Electron Limited Power modulation for etching high aspect ratio features
WO2017176255A1 (en) * 2016-04-05 2017-10-12 Varian Semiconductor Equipment Associates, Inc. Boron implanting using a co-gas
TWI707378B (zh) * 2016-04-08 2020-10-11 美商瓦里安半導體設備公司 將加工物質植入工件中與將摻雜劑植入工件中的方法及用於加工工件的設備
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
US10896806B2 (en) * 2016-11-03 2021-01-19 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
JP7071850B2 (ja) * 2017-05-11 2022-05-19 東京エレクトロン株式会社 エッチング方法
US12078154B1 (en) * 2017-10-05 2024-09-03 The Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville Microplasma-based heaterless, insertless cathode
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
CN108538970B (zh) * 2018-03-09 2020-07-07 华灿光电（浙江）有限公司 一种发光二极管的制备方法
US10224183B1 (en) 2018-03-21 2019-03-05 Lam Research Corporation Multi-level parameter and frequency pulsing with a low angular spread
US10304660B1 (en) * 2018-03-21 2019-05-28 Lam Research Corporation Multi-level pulsing of DC and RF signals
KR102820269B1 (ko) * 2018-04-13 2025-06-12 도쿄엘렉트론가부시키가이샤 공정 플라즈마의 이온 에너지 분포를 제어하기 위한 장치 및 방법
US10998170B2 (en) 2018-04-13 2021-05-04 Tokyo Electron Limited Method for ion mass separation and ion energy control in process plasmas
JP7066178B2 (ja) * 2018-06-01 2022-05-13 国立大学法人東海国立大学機構 Ｉｉｉ族窒化物半導体素子の製造装置および製造方法ならびに半導体ウエハの製造方法
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
JP6976228B2 (ja) * 2018-07-23 2021-12-08 株式会社日立ハイテク プラズマ処理装置
CN112534544B (zh) * 2018-08-30 2025-02-11 东京毅力科创株式会社 控制等离子体加工的系统和方法
US11688586B2 (en) * 2018-08-30 2023-06-27 Tokyo Electron Limited Method and apparatus for plasma processing
US11398387B2 (en) * 2018-12-05 2022-07-26 Lam Research Corporation Etching isolation features and dense features within a substrate
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
CN111524782B (zh) 2019-02-05 2023-07-25 东京毅力科创株式会社 等离子体处理装置
JP6797273B2 (ja) * 2019-02-05 2020-12-09 東京エレクトロン株式会社 プラズマ処理装置
KR20210140778A (ko) * 2019-04-15 2021-11-23 어플라이드 머티어리얼스, 인코포레이티드 정전식 척킹 프로세스
US12283463B2 (en) 2019-04-29 2025-04-22 Lam Research Corporation Systems and methods for multi-level pulsing in RF plasma tools
JP7603649B2 (ja) 2019-07-12 2024-12-20 エーイーエス グローバル ホールディングス， プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
US11817295B2 (en) 2019-08-14 2023-11-14 Tokyo Electron Limited Three-phase pulsing systems and methods for plasma processing
KR20220044845A (ko) * 2019-08-22 2022-04-11 램 리써치 코포레이션 마스크 형상을 제어하고 선택도 대 프로세스 마진 트레이드 오프를 파괴하기 위한 멀티-상태 rf 펄싱
US12057294B2 (en) * 2019-12-17 2024-08-06 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
CN113272939B (zh) * 2019-12-17 2023-11-14 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
JP7382848B2 (ja) * 2020-02-20 2023-11-17 東京エレクトロン株式会社 基板処理方法および基板処理装置
US11742184B2 (en) * 2020-02-28 2023-08-29 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP7535438B2 (ja) * 2020-02-28 2024-08-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2021207002A1 (en) * 2020-04-06 2021-10-14 Lam Research Corporation Methods and systems for controlling radiofrequency pulse-initiation power spike for plasma sheath stabilization
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
TW202533320A (zh) * 2020-05-14 2025-08-16 日商東京威力科創股份有限公司 電漿處理裝置及電源系統
TWI889813B (zh) 2020-05-14 2025-07-11 日商東京威力科創股份有限公司 電漿處理裝置
US11189462B1 (en) 2020-07-21 2021-11-30 Tokyo Electron Limited Ion stratification using bias pulses of short duration
US11545364B2 (en) 2020-08-24 2023-01-03 Tokyo Electron Limited Pulsed capacitively coupled plasma processes
DE102020212353A1 (de) * 2020-09-30 2022-03-31 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines optischen Elements, optisches Element, Vorrichtung zur Herstellung eines optischen Elements, Sekundärgas und Projektionsbelichtungsanlage
JP7537845B2 (ja) * 2020-12-25 2024-08-21 東京エレクトロン株式会社 プラズマ処理装置
JP7537844B2 (ja) * 2020-12-25 2024-08-21 東京エレクトロン株式会社 プラズマ処理装置
US11328902B1 (en) 2021-06-09 2022-05-10 XP Power Limited Radio frequency generator providing complex RF pulse pattern
JP7434669B2 (ja) 2021-06-21 2024-02-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20240026068A (ko) * 2021-06-29 2024-02-27 램 리써치 코포레이션 고 종횡비 에칭을 위한 다중 상태 펄싱
WO2023136913A1 (en) * 2022-01-14 2023-07-20 Lam Research Corporation Method to control etch profile by rf pulsing
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
WO2023158491A1 (en) * 2022-02-17 2023-08-24 Lam Research Corporation Systems and methods for reducing variability in features of a substrate
KR102812573B1 (ko) * 2022-06-07 2025-05-26 주식회사 히타치하이테크 플라스마 처리 장치
JPWO2024024594A1 (enExample) * 2022-07-28 2024-02-01
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
TW202418335A (zh) * 2022-09-29 2024-05-01 日商東京威力科創股份有限公司 電漿處理裝置及電源系統
TW202431327A (zh) * 2022-09-29 2024-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電源系統
US12237149B2 (en) * 2022-11-10 2025-02-25 Applied Materials, Inc. Reducing aspect ratio dependent etch with direct current bias pulsing
KR20240168908A (ko) * 2023-05-19 2024-12-02 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US20250250682A1 (en) * 2024-02-06 2025-08-07 Thin Film Service, Inc. Systems and Methods for Depositing Alternating Layers for a Diamond-Like Coating

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6253704B1 (en) * 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US20040124177A1 (en) * 2001-09-14 2004-07-01 Andrea Urban Method of etching structures into an etching body using a plasma
TW200629337A (en) * 1999-08-17 2006-08-16 Tokyo Electron Ltd Reactor for performing a plasma-assisted treatment on a substrate
CN1977351A (zh) * 2004-05-20 2007-06-06 瓦里安半导体设备联合公司 等离子体离子注入系统的原位处理室制备方法
TW200842945A (en) * 2007-04-17 2008-11-01 Lam Res Corp Apparatus and method for atomic layer deposition

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110697A (ja) 1982-12-17 1984-06-26 Shin Etsu Chem Co Ltd メチルハイドロジエンシラン類の製造方法
US5005066A (en) 1987-06-02 1991-04-02 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
JP3122175B2 (ja) 1991-08-05 2001-01-09 忠弘 大見 プラズマ処理装置
US5289010A (en) 1992-12-08 1994-02-22 Wisconsin Alumni Research Foundation Ion purification for plasma ion implantation
US5508227A (en) 1994-06-08 1996-04-16 Northeastern University Plasma ion implantation hydrogenation process utilizing voltage pulse applied to substrate
US5907221A (en) 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JPH104085A (ja) 1996-06-18 1998-01-06 Sony Corp ドライエッチング方法および装置
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
ATE251341T1 (de) 1996-08-01 2003-10-15 Surface Technology Systems Plc Verfahren zur ätzung von substraten
US6214162B1 (en) 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
JPH10150025A (ja) 1996-11-20 1998-06-02 Mitsubishi Electric Corp プラズマ反応装置
JPH10312899A (ja) 1997-05-15 1998-11-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JPH11224796A (ja) 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6319355B1 (en) 1999-06-30 2001-11-20 Lam Research Corporation Plasma processor with coil responsive to variable amplitude rf envelope
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
CN1158403C (zh) 1999-12-23 2004-07-21 西南交通大学 一种人工器官表面改性方法
US6485572B1 (en) 2000-08-28 2002-11-26 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
US7316764B2 (en) 2001-03-16 2008-01-08 4 Wave, Inc. System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal
JP2003073814A (ja) 2001-08-30 2003-03-12 Mitsubishi Heavy Ind Ltd 製膜装置
US20050106873A1 (en) 2003-08-15 2005-05-19 Hoffman Daniel J. Plasma chamber having multiple RF source frequencies
US7431857B2 (en) 2003-08-15 2008-10-07 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source
US20050205211A1 (en) 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
TWI489519B (zh) 2004-04-28 2015-06-21 半導體能源研究所股份有限公司 基板上配線，半導體裝置及其製造方法
US20050241762A1 (en) 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US7396746B2 (en) 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
US7686926B2 (en) 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
KR100632948B1 (ko) 2004-08-06 2006-10-11 삼성전자주식회사 칼코겐화합물 스퍼터링 형성 방법 및 이를 이용한 상변화 기억 소자 형성 방법
US20060121704A1 (en) 2004-12-07 2006-06-08 Varian Semiconductor Equipment Associates, Inc. Plasma ion implantation system with axial electrostatic confinement
US20060236931A1 (en) 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US7524743B2 (en) 2005-10-13 2009-04-28 Varian Semiconductor Equipment Associates, Inc. Conformal doping apparatus and method
US20070084564A1 (en) 2005-10-13 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Conformal doping apparatus and method
US20070170867A1 (en) 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
US7453059B2 (en) 2006-03-10 2008-11-18 Varian Semiconductor Equipment Associates, Inc. Technique for monitoring and controlling a plasma process
US20070224840A1 (en) 2006-03-21 2007-09-27 Varian Semiconductor Equipment Associates, Inc. Method of Plasma Processing with In-Situ Monitoring and Process Parameter Tuning
US7351664B2 (en) 2006-05-30 2008-04-01 Lam Research Corporation Methods for minimizing mask undercuts and notches for plasma processing system
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20080169183A1 (en) 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
JP2008205436A (ja) 2007-01-26 2008-09-04 Toshiba Corp 微細構造体の製造方法
US7820533B2 (en) 2007-02-16 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Multi-step plasma doping with improved dose control
US20080230008A1 (en) 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US20090004836A1 (en) 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US20090227096A1 (en) 2008-03-07 2009-09-10 Varian Semiconductor Equipment Associates, Inc. Method Of Forming A Retrograde Material Profile Using Ion Implantation
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
US8501624B2 (en) * 2008-12-04 2013-08-06 Varian Semiconductor Equipment Associates, Inc. Excited gas injection for ion implant control

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6253704B1 (en) * 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
TW200629337A (en) * 1999-08-17 2006-08-16 Tokyo Electron Ltd Reactor for performing a plasma-assisted treatment on a substrate
US20040124177A1 (en) * 2001-09-14 2004-07-01 Andrea Urban Method of etching structures into an etching body using a plasma
CN1977351A (zh) * 2004-05-20 2007-06-06 瓦里安半导体设备联合公司 等离子体离子注入系统的原位处理室制备方法
TW200842945A (en) * 2007-04-17 2008-11-01 Lam Res Corp Apparatus and method for atomic layer deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI756234B (zh) * 2016-06-29 2022-03-01 美商應用材料股份有限公司 使用材料變性及rf脈衝的選擇性蝕刻
US12057329B2 (en) 2016-06-29 2024-08-06 Applied Materials, Inc. Selective etch using material modification and RF pulsing
TWI769447B (zh) * 2019-05-10 2022-07-01 大陸商中微半導體設備（上海）股份有限公司 多頻率多階段的電漿射頻輸出的方法及其裝置

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KR101811364B1 (ko) 2017-12-22
CN103109342A (zh) 2013-05-15
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US9123509B2 (en) 2015-09-01
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