KR101811364B1 - 기판 플라즈마 프로세싱 기술들 - Google Patents

기판 플라즈마 프로세싱 기술들 Download PDF

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KR101811364B1
KR101811364B1 KR1020127033453A KR20127033453A KR101811364B1 KR 101811364 B1 KR101811364 B1 KR 101811364B1 KR 1020127033453 A KR1020127033453 A KR 1020127033453A KR 20127033453 A KR20127033453 A KR 20127033453A KR 101811364 B1 KR101811364 B1 KR 101811364B1
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power
bias
plasma
substrate
power level
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KR20130085955A (ko
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헬렌 메이나드
카말 하디디
비크람 싱흐
티모시 제이. 밀러
루도빅 고데
조지 디. 파파솔리오티스
버나드 지. 린제이
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020127033453A 2010-06-11 2011-06-13 기판 플라즈마 프로세싱 기술들 Active KR101811364B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35395310P 2010-06-11 2010-06-11
US61/353,953 2010-06-11
US13/157,005 US9123509B2 (en) 2007-06-29 2011-06-09 Techniques for plasma processing a substrate
US13/157,005 2011-06-09
PCT/US2011/040206 WO2011156813A1 (en) 2010-06-11 2011-06-13 Techniques for plasma processing a substrate

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KR20130085955A KR20130085955A (ko) 2013-07-30
KR101811364B1 true KR101811364B1 (ko) 2017-12-22

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US (1) US9123509B2 (enExample)
JP (1) JP5896572B2 (enExample)
KR (1) KR101811364B1 (enExample)
CN (1) CN103109342B (enExample)
TW (1) TWI562226B (enExample)
WO (1) WO2011156813A1 (enExample)

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