TWI562148B - Flash memory and programming method thereof - Google Patents

Flash memory and programming method thereof

Info

Publication number
TWI562148B
TWI562148B TW104109355A TW104109355A TWI562148B TW I562148 B TWI562148 B TW I562148B TW 104109355 A TW104109355 A TW 104109355A TW 104109355 A TW104109355 A TW 104109355A TW I562148 B TWI562148 B TW I562148B
Authority
TW
Taiwan
Prior art keywords
flash memory
programming method
programming
flash
memory
Prior art date
Application number
TW104109355A
Other languages
English (en)
Other versions
TW201621907A (zh
Inventor
Riichiro Shirota
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Publication of TW201621907A publication Critical patent/TW201621907A/zh
Application granted granted Critical
Publication of TWI562148B publication Critical patent/TWI562148B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
TW104109355A 2014-12-03 2015-03-24 Flash memory and programming method thereof TWI562148B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014244574A JP5992983B2 (ja) 2014-12-03 2014-12-03 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
TW201621907A TW201621907A (zh) 2016-06-16
TWI562148B true TWI562148B (en) 2016-12-11

Family

ID=55969784

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109355A TWI562148B (en) 2014-12-03 2015-03-24 Flash memory and programming method thereof

Country Status (5)

Country Link
US (1) US9349462B1 (zh)
JP (1) JP5992983B2 (zh)
KR (1) KR101705294B1 (zh)
CN (1) CN106158028B (zh)
TW (1) TWI562148B (zh)

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US10699767B2 (en) 2017-02-28 2020-06-30 SK Hynix Inc. Memory device and operating method thereof
KR102667532B1 (ko) 2017-02-28 2024-05-22 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
CN109411001B (zh) * 2017-08-15 2021-07-06 华邦电子股份有限公司 快闪存储器存储装置及其读取方法
CN109390030A (zh) * 2018-10-16 2019-02-26 长江存储科技有限责任公司 一种寄存器以及闪存单元的分组设备和方法
TWI714267B (zh) * 2019-09-18 2020-12-21 華邦電子股份有限公司 非揮發性記憶體及其資料寫入方法
JP6966587B2 (ja) 2020-03-02 2021-11-17 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置および読出し方法
US11462282B2 (en) 2020-04-01 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structure
KR102791107B1 (ko) 2020-06-15 2025-04-07 삼성전자주식회사 고전압 스위칭 회로를 포함하는 비휘발성 메모리 장치 및 이의 동작 방법
JP2022095248A (ja) * 2020-12-16 2022-06-28 キオクシア株式会社 半導体記憶装置
US11361835B1 (en) * 2021-03-01 2022-06-14 Sandisk Technologies Llc Countermeasure for reducing peak current during programming by optimizing timing of latch scan operations
JP7067851B1 (ja) * 2021-03-29 2022-05-16 ウィンボンド エレクトロニクス コーポレーション 半導体装置

Citations (7)

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JPS5522682B1 (zh) * 1971-07-01 1980-06-18
JP3626221B2 (ja) * 1993-12-13 2005-03-02 株式会社東芝 不揮発性半導体記憶装置
US7443728B2 (en) * 2004-12-31 2008-10-28 Samsung Electronic Co., Ltd. NAND flash memory device and method of programming same
US7791948B2 (en) * 2005-05-02 2010-09-07 Kabushiki Kaisha Toshiba Channel carrier discharging in a NAND flash memory on an insulating substrate or layer
US20100315882A1 (en) * 2009-06-12 2010-12-16 Jun Rye Rho Nonvolatile memory device and method of programming the same
US20110194351A1 (en) * 2007-02-07 2011-08-11 Mosaid Technologies Incorporated Source side asymmetrical precharge programming scheme
US8254181B2 (en) * 2008-11-24 2012-08-28 Samsung Electronics Co., Ltd. Nonvolatile memory device and programming method

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JP3781240B2 (ja) * 1998-09-07 2006-05-31 株式会社ルネサステクノロジ 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
JP2002109890A (ja) * 2000-10-03 2002-04-12 Hitachi Ltd 不揮発性半導体メモリ
JP2002319286A (ja) * 2001-04-19 2002-10-31 Hitachi Ltd 不揮発性記憶装置および記憶システム
US6907497B2 (en) * 2001-12-20 2005-06-14 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP4113166B2 (ja) * 2004-07-20 2008-07-09 株式会社東芝 半導体記憶装置
KR101463584B1 (ko) * 2008-07-30 2014-11-19 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 프로그램 방법
CN101685675B (zh) * 2008-09-26 2014-01-15 美光科技公司 存储器单元操作
JP2010123211A (ja) 2008-11-20 2010-06-03 Toshiba Corp 半導体記憶装置の書き込み方法
KR101669550B1 (ko) * 2009-09-10 2016-10-26 삼성전자주식회사 공통 소스 라인의 노이즈를 줄이는 플래시 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
KR101634363B1 (ko) * 2009-10-05 2016-06-29 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
KR101734204B1 (ko) * 2010-06-01 2017-05-12 삼성전자주식회사 프로그램 시퀀서를 포함하는 플래시 메모리 장치 및 시스템, 그리고 그것의 프로그램 방법
US8295098B2 (en) * 2010-06-16 2012-10-23 Micron Technology, Inc. Local sensing in a memory device
JP5522682B2 (ja) 2010-07-06 2014-06-18 ウィンボンド エレクトロニクス コーポレーション 半導体メモリ
KR101278103B1 (ko) * 2011-09-26 2013-06-24 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
JP5380508B2 (ja) * 2011-09-27 2014-01-08 株式会社東芝 不揮発性半導体記憶装置
US8830760B2 (en) * 2012-08-16 2014-09-09 Kabushiki Kaisha Toshiba Semiconductor storage device
KR20160005840A (ko) * 2014-07-07 2016-01-18 에스케이하이닉스 주식회사 반도체 장치

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522682B1 (zh) * 1971-07-01 1980-06-18
JP3626221B2 (ja) * 1993-12-13 2005-03-02 株式会社東芝 不揮発性半導体記憶装置
US7443728B2 (en) * 2004-12-31 2008-10-28 Samsung Electronic Co., Ltd. NAND flash memory device and method of programming same
US7791948B2 (en) * 2005-05-02 2010-09-07 Kabushiki Kaisha Toshiba Channel carrier discharging in a NAND flash memory on an insulating substrate or layer
US20110194351A1 (en) * 2007-02-07 2011-08-11 Mosaid Technologies Incorporated Source side asymmetrical precharge programming scheme
US20120262986A1 (en) * 2007-02-07 2012-10-18 Mosaid Technologies Incorporated Source side asymmetrical precharge programming scheme
US8254181B2 (en) * 2008-11-24 2012-08-28 Samsung Electronics Co., Ltd. Nonvolatile memory device and programming method
US20100315882A1 (en) * 2009-06-12 2010-12-16 Jun Rye Rho Nonvolatile memory device and method of programming the same

Also Published As

Publication number Publication date
TW201621907A (zh) 2016-06-16
KR20160067016A (ko) 2016-06-13
US20160163391A1 (en) 2016-06-09
CN106158028A (zh) 2016-11-23
JP2016110670A (ja) 2016-06-20
US9349462B1 (en) 2016-05-24
CN106158028B (zh) 2019-08-27
KR101705294B1 (ko) 2017-02-09
JP5992983B2 (ja) 2016-09-14

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