TWI561934B - Resist underlayer film forming composition for lithography comprising polyether structure-containing resin - Google Patents
Resist underlayer film forming composition for lithography comprising polyether structure-containing resinInfo
- Publication number
- TWI561934B TWI561934B TW100137328A TW100137328A TWI561934B TW I561934 B TWI561934 B TW I561934B TW 100137328 A TW100137328 A TW 100137328A TW 100137328 A TW100137328 A TW 100137328A TW I561934 B TWI561934 B TW I561934B
- Authority
- TW
- Taiwan
- Prior art keywords
- lithography
- film forming
- forming composition
- containing resin
- underlayer film
- Prior art date
Links
- 239000004721 Polyphenylene oxide Substances 0.000 title 1
- 238000001459 lithography Methods 0.000 title 1
- 229920000570 polyether Polymers 0.000 title 1
- 239000011347 resin Substances 0.000 title 1
- 229920005989 resin Polymers 0.000 title 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
- C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
- C08G65/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
- C08G65/4006—(I) or (II) containing elements other than carbon, oxygen, hydrogen or halogen as leaving group (X)
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
- C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
- C08G65/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
- C08G65/4012—Other compound (II) containing a ketone group, e.g. X-Ar-C(=O)-Ar-X for polyetherketones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D171/00—Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
- C08G2650/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing oxygen in addition to the ether group
- C08G2650/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing oxygen in addition to the ether group containing ketone groups, e.g. polyarylethylketones, PEEK or PEK
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31942—Of aldehyde or ketone condensation product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Architecture (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Toxicology (AREA)
- Materials For Photolithography (AREA)
- Polyethers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010231217 | 2010-10-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201224665A TW201224665A (en) | 2012-06-16 |
TWI561934B true TWI561934B (en) | 2016-12-11 |
Family
ID=45938293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100137328A TWI561934B (en) | 2010-10-14 | 2011-10-14 | Resist underlayer film forming composition for lithography comprising polyether structure-containing resin |
Country Status (5)
Country | Link |
---|---|
US (2) | US20130189533A1 (zh) |
JP (1) | JP5920588B2 (zh) |
KR (1) | KR101866828B1 (zh) |
TW (1) | TWI561934B (zh) |
WO (1) | WO2012050064A1 (zh) |
Families Citing this family (27)
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JP5915452B2 (ja) * | 2011-09-30 | 2016-05-11 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、並びにパターン形成方法 |
JPWO2013080929A1 (ja) * | 2011-12-01 | 2015-04-27 | Jsr株式会社 | 多層レジストプロセスに用いられるレジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、並びにパターン形成方法 |
JP5894106B2 (ja) * | 2012-06-18 | 2016-03-23 | 信越化学工業株式会社 | レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法 |
JP6264300B2 (ja) * | 2012-12-21 | 2018-01-24 | Jsr株式会社 | 重合体、樹脂組成物及び膜形成方法 |
KR102190384B1 (ko) * | 2013-10-14 | 2020-12-14 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
KR102313101B1 (ko) | 2013-12-12 | 2021-10-15 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 하부층용 방향족 수지 |
US9601325B2 (en) | 2014-06-24 | 2017-03-21 | Rohm And Haas Electronic Materials Llc | Aromatic resins for underlayers |
US9880469B2 (en) | 2014-07-15 | 2018-01-30 | Rohm And Haas Electronic Materials Llc | Resins for underlayers |
CN107077071B (zh) * | 2014-11-04 | 2020-10-02 | 日产化学工业株式会社 | 包含具有亚芳基的聚合物的抗蚀剂下层膜形成用组合物 |
US9508549B2 (en) | 2014-12-26 | 2016-11-29 | Dow Global Technologies Llc | Methods of forming electronic devices including filling porous features with a polymer |
US10365560B2 (en) * | 2015-03-31 | 2019-07-30 | Sumitomo Chemical Company, Limited | Resist composition and method for producing resist pattern |
US9908990B2 (en) | 2015-04-17 | 2018-03-06 | Samsung Sdi Co., Ltd. | Organic layer composition, organic layer, and method of forming patterns |
JP6712188B2 (ja) * | 2015-07-13 | 2020-06-17 | 信越化学工業株式会社 | レジスト下層膜形成用組成物及びこれを用いたパターン形成方法 |
KR102421597B1 (ko) * | 2015-07-14 | 2022-07-18 | 에스케이이노베이션 주식회사 | 신규한 레지스트 하층막 형성용 중합체, 이를 포함하는 레지스트 하층막 형성용 조성물 및 이를 이용한 레지스트 패턴의 형성 방법 |
KR101770749B1 (ko) * | 2016-01-11 | 2017-08-23 | 최상준 | 반사방지용 하드마스크 조성물 |
US11339242B2 (en) | 2016-03-08 | 2022-05-24 | Nissan Chemical Corporation | Method for manufacturing semiconductor substrate having group-III nitride compound layer |
WO2017199768A1 (ja) * | 2016-05-20 | 2017-11-23 | 日産化学工業株式会社 | レジスト下層膜形成組成物 |
KR102511277B1 (ko) * | 2017-01-13 | 2023-03-17 | 닛산 가가쿠 가부시키가이샤 | 아미드 용매를 포함하는 레지스트 하층막 형성조성물 |
WO2018167112A1 (en) | 2017-03-16 | 2018-09-20 | Merck Patent Gmbh | Lithographic compositions and methods of use thereof |
WO2018186310A1 (ja) * | 2017-04-03 | 2018-10-11 | 日産化学株式会社 | 光架橋基を有するポリエーテル樹脂を含む段差基板被覆組成物 |
JP6341317B2 (ja) * | 2017-04-19 | 2018-06-13 | Jsr株式会社 | 重合体、樹脂膜および電子部品 |
US11506980B2 (en) | 2017-04-25 | 2022-11-22 | Nissan Chemical Corporation | Resist underlayer film forming composition using a fluorene compound |
US10741410B2 (en) * | 2017-04-28 | 2020-08-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Material composition and methods thereof |
SG11202004817QA (en) | 2017-12-20 | 2020-07-29 | Merck Patent Gmbh | An ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating |
US11022882B2 (en) | 2018-06-20 | 2021-06-01 | Shin-Etsu Chemical Co., Ltd. | Compound and composition for forming organic film |
KR20210040972A (ko) * | 2018-08-09 | 2021-04-14 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 패턴 형성 방법 그리고 화합물 및 그의 제조 방법 |
JP6981945B2 (ja) | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | パターン形成方法 |
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US5268444A (en) * | 1993-04-02 | 1993-12-07 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Phenylethynyl-terminated poly(arylene ethers) |
JP2006285046A (ja) * | 2005-04-01 | 2006-10-19 | Jsr Corp | レジスト下層膜用組成物 |
JP2008015223A (ja) * | 2006-07-06 | 2008-01-24 | Nissan Chem Ind Ltd | スルホンを含有するレジスト下層膜形成組成物 |
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CA1272545A (en) * | 1986-08-01 | 1990-08-07 | Mitsui Chemicals, Incorporated | Thermoplastic aromatic polyether-pyridines and process for preparing the same |
US4766197A (en) * | 1986-10-28 | 1988-08-23 | Amoco Corporation | Modified poly(aryl ether ketones) derived from biphenol |
US4806618A (en) * | 1986-11-11 | 1989-02-21 | Central Glass Company, Limited | Aromatic polyethers having biphenylfluorene group |
JPH0786141A (ja) * | 1993-09-14 | 1995-03-31 | Fujitsu Ltd | パターン形成方法 |
US5607824A (en) * | 1994-07-27 | 1997-03-04 | International Business Machines Corporation | Antireflective coating for microlithography |
US5994425A (en) * | 1996-08-29 | 1999-11-30 | Xerox Corporation | Curable compositions containing photosensitive high performance aromatic ether polymers |
US5863963A (en) * | 1996-08-29 | 1999-01-26 | Xerox Corporation | Halomethylated high performance curable polymers |
US5814426A (en) * | 1997-11-21 | 1998-09-29 | Xerox Corporation | Imaging members containing high performance polymers |
US6642147B2 (en) * | 2001-08-23 | 2003-11-04 | International Business Machines Corporation | Method of making thermally stable planarizing films |
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KR20060056712A (ko) * | 2004-11-22 | 2006-05-25 | 삼성전자주식회사 | 포토리소그래피에 사용되는 바텀 레지스트용 폴리머 및 그제조 방법 |
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US20080286689A1 (en) * | 2007-05-14 | 2008-11-20 | Hong Zhuang | Antireflective Coating Compositions |
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WO2010041626A1 (ja) | 2008-10-10 | 2010-04-15 | 日産化学工業株式会社 | フルオレンを含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物 |
JP5544242B2 (ja) * | 2009-07-31 | 2014-07-09 | チェイル インダストリーズ インコーポレイテッド | レジスト下層膜用芳香族環含有重合体、これを含むレジスト下層膜組成物、およびこの組成物を用いた素子のパターン形成方法 |
-
2011
- 2011-10-07 US US13/825,925 patent/US20130189533A1/en not_active Abandoned
- 2011-10-07 KR KR1020137008102A patent/KR101866828B1/ko active IP Right Grant
- 2011-10-07 JP JP2012538669A patent/JP5920588B2/ja active Active
- 2011-10-07 WO PCT/JP2011/073233 patent/WO2012050064A1/ja active Application Filing
- 2011-10-14 TW TW100137328A patent/TWI561934B/zh active
-
2016
- 2016-07-08 US US15/205,165 patent/US9746772B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5268444A (en) * | 1993-04-02 | 1993-12-07 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Phenylethynyl-terminated poly(arylene ethers) |
JP2006285046A (ja) * | 2005-04-01 | 2006-10-19 | Jsr Corp | レジスト下層膜用組成物 |
JP2008015223A (ja) * | 2006-07-06 | 2008-01-24 | Nissan Chem Ind Ltd | スルホンを含有するレジスト下層膜形成組成物 |
Also Published As
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WO2012050064A1 (ja) | 2012-04-19 |
KR20130129915A (ko) | 2013-11-29 |
US20130189533A1 (en) | 2013-07-25 |
US20160320704A1 (en) | 2016-11-03 |
JP5920588B2 (ja) | 2016-05-18 |
TW201224665A (en) | 2012-06-16 |
US9746772B2 (en) | 2017-08-29 |
KR101866828B1 (ko) | 2018-06-14 |
JPWO2012050064A1 (ja) | 2014-02-24 |
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