TWI552300B - 半導體封裝件及用於一半導體封裝件之製造方法及光學模組 - Google Patents

半導體封裝件及用於一半導體封裝件之製造方法及光學模組 Download PDF

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Publication number
TWI552300B
TWI552300B TW100126871A TW100126871A TWI552300B TW I552300 B TWI552300 B TW I552300B TW 100126871 A TW100126871 A TW 100126871A TW 100126871 A TW100126871 A TW 100126871A TW I552300 B TWI552300 B TW I552300B
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TW
Taiwan
Prior art keywords
support substrate
shielding film
substrate
electromagnetic shielding
bonding
Prior art date
Application number
TW100126871A
Other languages
English (en)
Chinese (zh)
Other versions
TW201220463A (en
Inventor
鈴木優美
長尾真行
伊藤康幸
Original Assignee
新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 新力股份有限公司 filed Critical 新力股份有限公司
Publication of TW201220463A publication Critical patent/TW201220463A/zh
Application granted granted Critical
Publication of TWI552300B publication Critical patent/TWI552300B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
TW100126871A 2010-09-07 2011-07-28 半導體封裝件及用於一半導體封裝件之製造方法及光學模組 TWI552300B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010200067A JP5682185B2 (ja) 2010-09-07 2010-09-07 半導体パッケージおよび半導体パッケージの製造方法ならびに光学モジュール

Publications (2)

Publication Number Publication Date
TW201220463A TW201220463A (en) 2012-05-16
TWI552300B true TWI552300B (zh) 2016-10-01

Family

ID=45770091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100126871A TWI552300B (zh) 2010-09-07 2011-07-28 半導體封裝件及用於一半導體封裝件之製造方法及光學模組

Country Status (5)

Country Link
US (1) US8513756B2 (enExample)
JP (1) JP5682185B2 (enExample)
KR (1) KR101870985B1 (enExample)
CN (1) CN102403325B (enExample)
TW (1) TWI552300B (enExample)

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JP2010238995A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体モジュールおよびこれを搭載したカメラモジュール
WO2013179765A1 (ja) * 2012-05-30 2013-12-05 オリンパス株式会社 撮像装置の製造方法および半導体装置の製造方法
US8759930B2 (en) 2012-09-10 2014-06-24 Optiz, Inc. Low profile image sensor package
CN104347644B (zh) * 2013-07-25 2018-06-19 意法半导体研发(深圳)有限公司 具有透镜组件的图像检测器及相关方法
CN103916577B (zh) * 2014-03-24 2018-06-15 南昌欧菲光电技术有限公司 静电导电元件及具有该静电导电元件的摄像模组
CN103996687A (zh) * 2014-06-12 2014-08-20 中国电子科技集团公司第四十四研究所 局部减薄背照式图像传感器结构及其封装工艺
JP6051399B2 (ja) * 2014-07-17 2016-12-27 関根　弘一 固体撮像装置及びその製造方法
US9666730B2 (en) 2014-08-18 2017-05-30 Optiz, Inc. Wire bond sensor package
US9634053B2 (en) * 2014-12-09 2017-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor chip sidewall interconnection
JP6191728B2 (ja) * 2015-08-10 2017-09-06 大日本印刷株式会社 イメージセンサモジュール
US20170123525A1 (en) * 2015-10-29 2017-05-04 Synaptics Incorporated System and method for generating reliable electrical connections
US10636714B2 (en) * 2015-11-05 2020-04-28 Sony Semiconductor Solutions Corporation Semiconductor device, manufacturing method of semiconductor device, and electronic apparatus
WO2017221589A1 (ja) * 2016-06-20 2017-12-28 ソニー株式会社 半導体チップパッケージ
CN106449546B (zh) * 2016-09-26 2019-12-20 苏州晶方半导体科技股份有限公司 影像传感芯片封装结构及其封装方法
US20180090524A1 (en) * 2016-09-26 2018-03-29 China Water Level CSP Co., Ltd. Image sensor package and method of packaging the same
WO2018223317A1 (zh) * 2017-06-07 2018-12-13 深圳市汇顶科技股份有限公司 芯片封装结构、方法和终端设备
CN109936680B (zh) * 2017-12-15 2021-05-04 宁波舜宇光电信息有限公司 具有扩展布线层的系统化封装摄像模组及其感光组件、电子设备和制备方法
JP2019134111A (ja) * 2018-02-01 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 半導体装置
CN109862245B (zh) * 2019-02-21 2021-04-30 信利光电股份有限公司 一种防pcb漏光的摄像模组
CN111863843B (zh) * 2019-04-30 2024-03-01 同欣电子工业股份有限公司 感测器封装结构及其感测模块
JP2021057440A (ja) * 2019-09-30 2021-04-08 ソニーセミコンダクタソリューションズ株式会社 半導体レーザ駆動装置、電子機器、および、半導体レーザ駆動装置の製造方法
CN220189644U (zh) 2020-09-25 2023-12-15 株式会社村田制作所 电子部件模块
WO2024058037A1 (ja) * 2022-09-13 2024-03-21 株式会社村田製作所 赤外線センサモジュール
CN115939110A (zh) * 2022-12-02 2023-04-07 Tcl华星光电技术有限公司 芯片封装模组
CN115842528B (zh) * 2023-02-15 2023-05-12 深圳新声半导体有限公司 一种封装方法及结构

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TW200947659A (en) * 2008-01-09 2009-11-16 Sony Corp Semiconductor apparatus and method for manufacturing the same
US20100032781A1 (en) * 2008-08-08 2010-02-11 Samsung Electro-Mechanics Co., Ltd. Camera module and method of manufacturing the same

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JP2002026187A (ja) * 2000-07-07 2002-01-25 Sony Corp 半導体パッケージ及び半導体パッケージの製造方法
US7679167B2 (en) * 2007-01-08 2010-03-16 Visera Technologies Company, Limited Electronic assembly for image sensor device and fabrication method thereof
JP2008300800A (ja) * 2007-06-04 2008-12-11 Nippon Steel Corp 表面処理金属板及び電子機器用筐体
JP4799543B2 (ja) * 2007-12-27 2011-10-26 株式会社東芝 半導体パッケージ及びカメラモジュール
JP2009158853A (ja) 2007-12-27 2009-07-16 Toshiba Corp 半導体装置
JP4762264B2 (ja) * 2008-04-01 2011-08-31 岩手東芝エレクトロニクス株式会社 カメラモジュールおよびカメラモジュールの製造方法
JP2010011230A (ja) * 2008-06-27 2010-01-14 I Square Research Co Ltd カメラモジュール
JP4966931B2 (ja) * 2008-08-26 2012-07-04 シャープ株式会社 電子素子ウエハモジュールおよびその製造方法、電子素子モジュールおよびその製造方法、電子情報機器
JP2010186870A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 半導体装置

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20070007495A1 (en) * 2004-06-18 2007-01-11 Hayes Richard A Electrically conductive polyetherester composition comprising carbon black and product made therefrom
TW200947659A (en) * 2008-01-09 2009-11-16 Sony Corp Semiconductor apparatus and method for manufacturing the same
US20100032781A1 (en) * 2008-08-08 2010-02-11 Samsung Electro-Mechanics Co., Ltd. Camera module and method of manufacturing the same

Also Published As

Publication number Publication date
JP2012059832A (ja) 2012-03-22
TW201220463A (en) 2012-05-16
CN102403325B (zh) 2016-04-20
US20120056292A1 (en) 2012-03-08
KR101870985B1 (ko) 2018-06-25
KR20120025409A (ko) 2012-03-15
US8513756B2 (en) 2013-08-20
JP5682185B2 (ja) 2015-03-11
CN102403325A (zh) 2012-04-04

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