TWI550305B - 具入瞳負後焦之投影物鏡及投影曝光裝置 - Google Patents
具入瞳負後焦之投影物鏡及投影曝光裝置 Download PDFInfo
- Publication number
- TWI550305B TWI550305B TW103125259A TW103125259A TWI550305B TW I550305 B TWI550305 B TW I550305B TW 103125259 A TW103125259 A TW 103125259A TW 103125259 A TW103125259 A TW 103125259A TW I550305 B TWI550305 B TW I550305B
- Authority
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- Taiwan
- Prior art keywords
- mirror
- plane
- projection objective
- image
- mirrors
- Prior art date
Links
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0605—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors
- G02B17/0615—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors off-axis or unobscured systems in wich all of the mirrors share a common axis of rotational symmetry
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/22—Telecentric objectives or lens systems
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78674406P | 2006-03-27 | 2006-03-27 | |
| DE102006014380A DE102006014380A1 (de) | 2006-03-27 | 2006-03-27 | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201447362A TW201447362A (zh) | 2014-12-16 |
| TWI550305B true TWI550305B (zh) | 2016-09-21 |
Family
ID=38513148
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103125259A TWI550305B (zh) | 2006-03-27 | 2007-03-20 | 具入瞳負後焦之投影物鏡及投影曝光裝置 |
| TW096109615A TWI456250B (zh) | 2006-03-27 | 2007-03-20 | 具入瞳負後焦之投影物鏡及投影曝光裝置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096109615A TWI456250B (zh) | 2006-03-27 | 2007-03-20 | 具入瞳負後焦之投影物鏡及投影曝光裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7869138B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1840622A3 (cg-RX-API-DMAC7.html) |
| JP (2) | JP5714201B2 (cg-RX-API-DMAC7.html) |
| KR (3) | KR101121817B1 (cg-RX-API-DMAC7.html) |
| DE (1) | DE102006014380A1 (cg-RX-API-DMAC7.html) |
| TW (2) | TWI550305B (cg-RX-API-DMAC7.html) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009508150A (ja) * | 2005-09-13 | 2009-02-26 | カール・ツァイス・エスエムティー・アーゲー | マイクロリソグラフィ投影光学系、ある機器を製造するための方法、光学面を設計する方法 |
| DE102006014380A1 (de) | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
| DE102006056035A1 (de) * | 2006-11-28 | 2008-05-29 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Projektions-Mikrolithographie, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil |
| EP1950594A1 (de) * | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
| DE102008002377A1 (de) | 2007-07-17 | 2009-01-22 | Carl Zeiss Smt Ag | Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem |
| CN102819196B (zh) * | 2008-03-20 | 2016-03-09 | 卡尔蔡司Smt有限责任公司 | 用于微光刻的投射物镜 |
| DE102008033342A1 (de) | 2008-07-16 | 2010-01-21 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Mikrolithographie |
| DE102008000800A1 (de) | 2008-03-20 | 2009-09-24 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Mikrolithographie |
| DE102008000967B4 (de) * | 2008-04-03 | 2015-04-09 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
| DE102008033340B3 (de) * | 2008-07-16 | 2010-04-08 | Carl Zeiss Smt Ag | Abbildende Optik |
| DE102008046699B4 (de) | 2008-09-10 | 2014-03-13 | Carl Zeiss Smt Gmbh | Abbildende Optik |
| WO2010032753A1 (ja) * | 2008-09-18 | 2010-03-25 | 株式会社ニコン | 開口絞り、光学系、露光装置及び電子デバイスの製造方法 |
| DE102008049588B4 (de) * | 2008-09-30 | 2018-04-05 | Carl Zeiss Smt Gmbh | Optische Abbildungseinrichtung, Mikroskop und Abbildungsverfahren für die Mikroskopie |
| DE102008049589A1 (de) * | 2008-09-30 | 2010-04-08 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung und Abbildungsverfahren für die Mikroskopie |
| KR20100044625A (ko) * | 2008-10-22 | 2010-04-30 | 삼성전자주식회사 | 주기적으로 활성화되는 복제 경로를 구비하는 지연 동기 루프를 구비하는 반도체 장치 |
| JP5525550B2 (ja) | 2009-03-06 | 2014-06-18 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ用の照明光学系及び光学系 |
| US8743342B2 (en) * | 2009-11-17 | 2014-06-03 | Nikon Corporation | Reflective imaging optical system, exposure apparatus, and method for producing device |
| KR101946596B1 (ko) | 2009-11-24 | 2019-02-11 | 가부시키가이샤 니콘 | 결상 광학계, 노광 장치 및 디바이스 제조 방법 |
| US8317344B2 (en) | 2010-06-08 | 2012-11-27 | Nikon Corporation | High NA annular field catoptric projection optics using Zernike polynomial mirror surfaces |
| DE102010041623A1 (de) * | 2010-09-29 | 2012-03-29 | Carl Zeiss Smt Gmbh | Spiegel |
| US20120170014A1 (en) * | 2011-01-04 | 2012-07-05 | Northwestern University | Photolithography system using a solid state light source |
| DE102011076752A1 (de) * | 2011-05-31 | 2012-12-06 | Carl Zeiss Smt Gmbh | Abbildende Optik |
| DE102011086345A1 (de) * | 2011-11-15 | 2013-05-16 | Carl Zeiss Smt Gmbh | Spiegel |
| CN102402135B (zh) * | 2011-12-07 | 2013-06-05 | 北京理工大学 | 一种极紫外光刻投影物镜设计方法 |
| WO2013118615A1 (ja) | 2012-02-06 | 2013-08-15 | 株式会社ニコン | 反射結像光学系、露光装置、およびデバイス製造方法 |
| DE102012204273B4 (de) | 2012-03-19 | 2015-08-13 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie |
| WO2014019617A1 (en) | 2012-08-01 | 2014-02-06 | Carl Zeiss Smt Gmbh | Imaging optical unit for a projection exposure apparatus |
| DE102013218132A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Kollektor |
| DE102013218128A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungssystem |
| DE102013218130A1 (de) * | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie |
| JP6215009B2 (ja) * | 2013-11-15 | 2017-10-18 | 株式会社東芝 | 撮像装置及び撮像方法 |
| JP5854295B2 (ja) * | 2014-04-11 | 2016-02-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ用の照明光学系及び光学系 |
| DE102014216801A1 (de) | 2014-08-25 | 2016-02-25 | Carl Zeiss Smt Gmbh | Facettenspiegel für eine Beleuchtungsoptik für die Projektionslithographie |
| CN105511231B (zh) * | 2014-10-16 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | Euv光源和曝光装置 |
| DE102014223811B4 (de) | 2014-11-21 | 2016-09-29 | Carl Zeiss Smt Gmbh | Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils |
| JP6370255B2 (ja) * | 2015-04-07 | 2018-08-08 | 信越化学工業株式会社 | ペリクル用フレーム及びそれを用いたペリクル |
| DE102017217251A1 (de) | 2017-09-27 | 2019-03-28 | Carl Zeiss Smt Gmbh | Verfahren und Anordnung zur Analyse der Wellenfrontwirkung eines optischen Systems |
| RU2760443C1 (ru) * | 2020-12-07 | 2021-11-25 | Общество с Ограниченной Ответственностью Научно Исследовательский Центр «Астрофизика» | Устройство фокусировки для лазерной обработки |
| DE102021206953A1 (de) | 2021-07-02 | 2022-06-02 | Carl Zeiss Smt Gmbh | Optisches system, lithographieanlage und verfahren zum betreiben eines optischen systems |
| DE102022206110A1 (de) * | 2022-06-20 | 2023-12-21 | Carl Zeiss Smt Gmbh | Abbildende EUV-Optik zur Abbildung eines Objektfeldes in ein Bildfeld |
| DE102022209908A1 (de) | 2022-09-21 | 2024-03-21 | Carl Zeiss Smt Gmbh | Facettenspiegel, Beleuchtungsoptik, Anordnung eines Facettenspiegels, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines nanostrukturierten Bauelements |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010043391A1 (en) * | 2000-01-14 | 2001-11-22 | Shafer David R. | Microlithographic reduction projection catadioptric objective |
| TW200423228A (en) * | 2003-02-21 | 2004-11-01 | Canon Kk | Catoptric projection optical system |
| TW200537257A (en) * | 2004-04-28 | 2005-11-16 | Integrated Solutions Co Ltd | Exposing apparatus |
Family Cites Families (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US666560A (en) * | 1899-07-25 | 1901-01-22 | William S Rowland | Wire fence. |
| DE3343868A1 (de) * | 1983-12-03 | 1985-06-13 | Zeiss Carl Fa | Objektiv mit kegelschnittflaechen fuer die mikrozonenabbildung |
| US4650292A (en) | 1983-12-28 | 1987-03-17 | Polaroid Corporation | Analytic function optical component |
| US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
| JP2691226B2 (ja) | 1989-07-10 | 1997-12-17 | 株式会社ニコン | 赤外線撮像光学装置 |
| US5071240A (en) | 1989-09-14 | 1991-12-10 | Nikon Corporation | Reflecting optical imaging apparatus using spherical reflectors and producing an intermediate image |
| US5063586A (en) | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
| US5212588A (en) * | 1991-04-09 | 1993-05-18 | The United States Of America As Represented By The United States Department Of Energy | Reflective optical imaging system for extreme ultraviolet wavelengths |
| US5309276A (en) | 1991-08-29 | 1994-05-03 | Optical Research Associates | Catoptric optical system including concave and convex reflectors |
| JPH0736959A (ja) | 1993-07-15 | 1995-02-07 | Hitachi Ltd | 自由曲面光学系の設計方法 |
| DE4327656A1 (de) * | 1993-08-17 | 1995-02-23 | Steinheil Optronik Gmbh | Infrarot-Objektiv |
| JPH09505529A (ja) | 1993-11-23 | 1997-06-03 | プラスモテッグ エンジニアリング センター | 精密表面処理のための研磨材およびその製造方法 |
| JP3358097B2 (ja) | 1994-04-12 | 2002-12-16 | 株式会社ニコン | X線投影露光装置 |
| EP0730180B1 (en) | 1995-02-28 | 2002-09-04 | Canon Kabushiki Kaisha | Reflecting type of zoom lens |
| US6021004A (en) | 1995-02-28 | 2000-02-01 | Canon Kabushiki Kaisha | Reflecting type of zoom lens |
| US6166866A (en) | 1995-02-28 | 2000-12-26 | Canon Kabushiki Kaisha | Reflecting type optical system |
| US5815310A (en) * | 1995-12-12 | 1998-09-29 | Svg Lithography Systems, Inc. | High numerical aperture ring field optical reduction system |
| JP3041328B2 (ja) | 1996-03-21 | 2000-05-15 | 株式会社那須板金工業 | 平板葺き屋根構造 |
| US5686728A (en) * | 1996-05-01 | 1997-11-11 | Lucent Technologies Inc | Projection lithography system and method using all-reflective optical elements |
| JPH11110791A (ja) | 1997-09-30 | 1999-04-23 | Pioneer Electron Corp | 光情報記録媒体の再生ピックアップ装置 |
| TW594438B (en) * | 1997-11-07 | 2004-06-21 | Koninkl Philips Electronics Nv | Three-mirror system for lithographic projection, and projection apparatus comprising such a mirror system |
| WO1999026278A1 (en) * | 1997-11-14 | 1999-05-27 | Nikon Corporation | Exposure apparatus and method of manufacturing the same, and exposure method |
| US6240158B1 (en) * | 1998-02-17 | 2001-05-29 | Nikon Corporation | X-ray projection exposure apparatus with a position detection optical system |
| US6226346B1 (en) | 1998-06-09 | 2001-05-01 | The Regents Of The University Of California | Reflective optical imaging systems with balanced distortion |
| JP4238390B2 (ja) * | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
| JP2000091209A (ja) | 1998-09-14 | 2000-03-31 | Nikon Corp | 露光装置の製造方法、露光装置、及びデバイス製造方法 |
| US6859328B2 (en) | 1998-05-05 | 2005-02-22 | Carl Zeiss Semiconductor | Illumination system particularly for microlithography |
| US7186983B2 (en) * | 1998-05-05 | 2007-03-06 | Carl Zeiss Smt Ag | Illumination system particularly for microlithography |
| EP0955641B1 (de) * | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| US6396067B1 (en) | 1998-05-06 | 2002-05-28 | Koninklijke Philips Electronics N.V. | Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system |
| DE19923609A1 (de) * | 1998-05-30 | 1999-12-02 | Zeiss Carl Fa | Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie |
| US6577443B2 (en) | 1998-05-30 | 2003-06-10 | Carl-Zeiss Stiftung | Reduction objective for extreme ultraviolet lithography |
| EP1293832A1 (en) * | 1998-06-08 | 2003-03-19 | Nikon Corporation | Projection exposure apparatus and method |
| US6072852A (en) | 1998-06-09 | 2000-06-06 | The Regents Of The University Of California | High numerical aperture projection system for extreme ultraviolet projection lithography |
| US6213610B1 (en) | 1998-09-21 | 2001-04-10 | Nikon Corporation | Catoptric reduction projection optical system and exposure apparatus and method using same |
| JP2000100694A (ja) | 1998-09-22 | 2000-04-07 | Nikon Corp | 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法 |
| US6195201B1 (en) * | 1999-01-27 | 2001-02-27 | Svg Lithography Systems, Inc. | Reflective fly's eye condenser for EUV lithography |
| WO2002048796A2 (en) | 2000-12-12 | 2002-06-20 | Carl Zeiss Smt Ag | Projection system for euv lithography |
| US6600552B2 (en) | 1999-02-15 | 2003-07-29 | Carl-Zeiss Smt Ag | Microlithography reduction objective and projection exposure apparatus |
| US7151592B2 (en) | 1999-02-15 | 2006-12-19 | Carl Zeiss Smt Ag | Projection system for EUV lithography |
| DE59914179D1 (de) | 1999-02-15 | 2007-03-22 | Zeiss Carl Smt Ag | Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
| US6033079A (en) | 1999-03-15 | 2000-03-07 | Hudyma; Russell | High numerical aperture ring field projection system for extreme ultraviolet lithography |
| WO2000055849A1 (en) | 1999-03-15 | 2000-09-21 | Matsushita Electric Industrial Co., Ltd. | Convergent device, optical head, optical information recording/reproducing and optical information recording/reproducing method |
| JP2000286189A (ja) * | 1999-03-31 | 2000-10-13 | Nikon Corp | 露光装置および露光方法ならびにデバイス製造方法 |
| US6426506B1 (en) | 1999-05-27 | 2002-07-30 | The Regents Of The University Of California | Compact multi-bounce projection system for extreme ultraviolet projection lithography |
| JP4212721B2 (ja) | 1999-06-10 | 2009-01-21 | 三菱電機株式会社 | 広角反射光学系 |
| JP4717974B2 (ja) | 1999-07-13 | 2011-07-06 | 株式会社ニコン | 反射屈折光学系及び該光学系を備える投影露光装置 |
| US6557443B1 (en) | 1999-09-09 | 2003-05-06 | Larue Mark C. | Bar feeder for machining center |
| EP1093021A3 (en) * | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projection optical system as well as equipment and methods making use of said system |
| US6621557B2 (en) * | 2000-01-13 | 2003-09-16 | Nikon Corporation | Projection exposure apparatus and exposure methods |
| US6867913B2 (en) * | 2000-02-14 | 2005-03-15 | Carl Zeiss Smt Ag | 6-mirror microlithography projection objective |
| JP2002015979A (ja) | 2000-06-29 | 2002-01-18 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
| WO2002033467A1 (de) | 2000-10-20 | 2002-04-25 | Carl Zeiss | 8-spiegel-mikrolithographie-projektionsobjektiv |
| DE10052289A1 (de) | 2000-10-20 | 2002-04-25 | Zeiss Carl | 8-Spiegel-Mikrolithographie-Projektionsobjektiv |
| TW573234B (en) * | 2000-11-07 | 2004-01-21 | Asml Netherlands Bv | Lithographic projection apparatus and integrated circuit device manufacturing method |
| EP1393133B1 (en) | 2001-01-09 | 2005-10-26 | Carl Zeiss SMT AG | Projection system for euv lithography |
| US6387723B1 (en) | 2001-01-19 | 2002-05-14 | Silicon Light Machines | Reduced surface charging in silicon-based devices |
| US20020171047A1 (en) * | 2001-03-28 | 2002-11-21 | Chan Kin Foeng | Integrated laser diode array and applications |
| JP4349550B2 (ja) | 2001-03-29 | 2009-10-21 | フジノン株式会社 | 反射型投映用光学系 |
| TW594043B (en) | 2001-04-11 | 2004-06-21 | Matsushita Electric Industrial Co Ltd | Reflection type optical apparatus and photographing apparatus using the same, multi-wavelength photographing apparatus, monitoring apparatus for vehicle |
| JP2002329655A (ja) * | 2001-05-01 | 2002-11-15 | Canon Inc | 反射型縮小投影光学系、露光装置及びデバイス製造方法 |
| DE10139177A1 (de) * | 2001-08-16 | 2003-02-27 | Zeiss Carl | Objektiv mit Pupillenobskuration |
| JP4134544B2 (ja) | 2001-10-01 | 2008-08-20 | 株式会社ニコン | 結像光学系および露光装置 |
| JP2003114387A (ja) | 2001-10-04 | 2003-04-18 | Nikon Corp | 反射屈折光学系および該光学系を備える投影露光装置 |
| EP1333260A3 (en) | 2002-01-31 | 2004-02-25 | Canon Kabushiki Kaisha | Phase measuring method and apparatus |
| JP3581689B2 (ja) | 2002-01-31 | 2004-10-27 | キヤノン株式会社 | 位相測定装置 |
| JP2003233002A (ja) | 2002-02-07 | 2003-08-22 | Canon Inc | 反射型投影光学系、露光装置及びデバイス製造方法 |
| JP2003233005A (ja) | 2002-02-07 | 2003-08-22 | Canon Inc | 反射型投影光学系、露光装置及びデバイス製造方法 |
| JP2003233001A (ja) | 2002-02-07 | 2003-08-22 | Canon Inc | 反射型投影光学系、露光装置及びデバイス製造方法 |
| US6989922B2 (en) | 2002-06-21 | 2006-01-24 | Nikon Corporation | Deformable mirror actuation system |
| JP2004029625A (ja) | 2002-06-28 | 2004-01-29 | Nikon Corp | 投影光学系、露光装置及び露光方法 |
| JP2004170869A (ja) * | 2002-11-22 | 2004-06-17 | Nikon Corp | 結像光学系、露光装置および露光方法 |
| JP3938040B2 (ja) | 2002-12-27 | 2007-06-27 | キヤノン株式会社 | 反射型投影光学系、露光装置及びデバイス製造方法 |
| US7268891B2 (en) * | 2003-01-15 | 2007-09-11 | Asml Holding N.V. | Transmission shear grating in checkerboard configuration for EUV wavefront sensor |
| JP2004252358A (ja) | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系及び露光装置 |
| JP2004258541A (ja) | 2003-02-27 | 2004-09-16 | Canon Inc | 反射型光学系 |
| JP2005003943A (ja) * | 2003-06-12 | 2005-01-06 | Fuji Xerox Co Ltd | 光学素子およびその製造方法 |
| JP4428947B2 (ja) | 2003-06-30 | 2010-03-10 | キヤノン株式会社 | 結像光学系 |
| JP2005055553A (ja) | 2003-08-08 | 2005-03-03 | Nikon Corp | ミラー、温度調整機構付きミラー及び露光装置 |
| US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| JP2005166778A (ja) | 2003-12-01 | 2005-06-23 | Canon Inc | 露光装置、デバイスの製造方法 |
| DE10359576A1 (de) | 2003-12-18 | 2005-07-28 | Carl Zeiss Smt Ag | Verfahren zur Herstellung einer optischen Einheit |
| DE10360414A1 (de) | 2003-12-19 | 2005-07-21 | Carl Zeiss Smt Ag | EUV-Projektionsobjektiv sowie Verfahren zu dessen Herstellung |
| WO2005083759A1 (ja) * | 2004-02-27 | 2005-09-09 | Nikon Corporation | 露光装置、及び微細パターンを有するデバイスの製造方法 |
| JP2005294608A (ja) | 2004-04-01 | 2005-10-20 | Nikon Corp | 放電光源ユニット、照明光学装置、露光装置および露光方法 |
| JP2005294087A (ja) | 2004-04-01 | 2005-10-20 | Nikon Corp | 光源ユニット、照明光学装置、露光装置および露光方法 |
| US7114818B2 (en) | 2004-05-06 | 2006-10-03 | Olympus Corporation | Optical system, and electronic equipment that incorporates the same |
| WO2006069725A1 (de) * | 2004-12-23 | 2006-07-06 | Carl Zeiss Smt Ag | Hochaperturiges objektiv mit obskurierter pupille |
| DE102005042005A1 (de) | 2004-12-23 | 2006-07-06 | Carl Zeiss Smt Ag | Hochaperturiges Objektiv mit obskurierter Pupille |
| JP2006245147A (ja) | 2005-03-01 | 2006-09-14 | Canon Inc | 投影光学系、露光装置及びデバイスの製造方法 |
| JP2006253487A (ja) | 2005-03-11 | 2006-09-21 | Nikon Corp | 照明装置、投影露光方法、投影露光装置、及びマイクロデバイスの製造方法 |
| JP2006351586A (ja) | 2005-06-13 | 2006-12-28 | Nikon Corp | 照明装置、投影露光装置、及びマイクロデバイスの製造方法 |
| KR100604942B1 (ko) | 2005-06-18 | 2006-07-31 | 삼성전자주식회사 | 비축상(off-axis) 프로젝션 광학계 및 이를 적용한극자외선 리소그래피 장치 |
| JP2009508150A (ja) | 2005-09-13 | 2009-02-26 | カール・ツァイス・エスエムティー・アーゲー | マイクロリソグラフィ投影光学系、ある機器を製造するための方法、光学面を設計する方法 |
| DE102006003375A1 (de) | 2006-01-24 | 2007-08-09 | Carl Zeiss Smt Ag | Gruppenweise korrigiertes Objektiv |
| DE102006014380A1 (de) | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
-
2006
- 2006-03-27 DE DE102006014380A patent/DE102006014380A1/de not_active Ceased
-
2007
- 2007-03-20 TW TW103125259A patent/TWI550305B/zh active
- 2007-03-20 TW TW096109615A patent/TWI456250B/zh not_active IP Right Cessation
- 2007-03-21 EP EP07005743.5A patent/EP1840622A3/de not_active Withdrawn
- 2007-03-22 US US11/689,672 patent/US7869138B2/en not_active Expired - Fee Related
- 2007-03-27 JP JP2007081783A patent/JP5714201B2/ja not_active Expired - Fee Related
- 2007-03-27 KR KR1020070029682A patent/KR101121817B1/ko not_active Expired - Fee Related
-
2010
- 2010-11-19 US US12/949,985 patent/US8094380B2/en active Active
-
2011
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- 2011-12-06 US US13/312,196 patent/US8810927B2/en not_active Expired - Fee Related
-
2012
- 2012-01-09 KR KR1020120002600A patent/KR101144492B1/ko not_active Expired - Fee Related
- 2012-12-27 JP JP2012285891A patent/JP5883778B2/ja not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010043391A1 (en) * | 2000-01-14 | 2001-11-22 | Shafer David R. | Microlithographic reduction projection catadioptric objective |
| TW200423228A (en) * | 2003-02-21 | 2004-11-01 | Canon Kk | Catoptric projection optical system |
| TW200537257A (en) * | 2004-04-28 | 2005-11-16 | Integrated Solutions Co Ltd | Exposing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110063596A1 (en) | 2011-03-17 |
| KR20110089395A (ko) | 2011-08-08 |
| US8810927B2 (en) | 2014-08-19 |
| JP2013065051A (ja) | 2013-04-11 |
| TW200741244A (en) | 2007-11-01 |
| KR101166658B1 (ko) | 2012-07-18 |
| KR101144492B1 (ko) | 2012-05-14 |
| KR20120024896A (ko) | 2012-03-14 |
| JP2007264636A (ja) | 2007-10-11 |
| TW201447362A (zh) | 2014-12-16 |
| US20120075608A1 (en) | 2012-03-29 |
| US8094380B2 (en) | 2012-01-10 |
| DE102006014380A1 (de) | 2007-10-11 |
| TWI456250B (zh) | 2014-10-11 |
| EP1840622A3 (de) | 2018-05-16 |
| EP1840622A2 (de) | 2007-10-03 |
| KR20070096965A (ko) | 2007-10-02 |
| KR101121817B1 (ko) | 2012-03-22 |
| US7869138B2 (en) | 2011-01-11 |
| JP5714201B2 (ja) | 2015-05-07 |
| JP5883778B2 (ja) | 2016-03-15 |
| US20070223112A1 (en) | 2007-09-27 |
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