TWI548868B - A method of measuring a photomask transmittance distribution, a program, a computer-readable medium, a control method of an exposure apparatus, an exposure method, and an exposure apparatus, and a device manufacturing method - Google Patents

A method of measuring a photomask transmittance distribution, a program, a computer-readable medium, a control method of an exposure apparatus, an exposure method, and an exposure apparatus, and a device manufacturing method Download PDF

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Publication number
TWI548868B
TWI548868B TW104138470A TW104138470A TWI548868B TW I548868 B TWI548868 B TW I548868B TW 104138470 A TW104138470 A TW 104138470A TW 104138470 A TW104138470 A TW 104138470A TW I548868 B TWI548868 B TW I548868B
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TW
Taiwan
Prior art keywords
optical system
pupil
light
measurement
measuring
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TW104138470A
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English (en)
Chinese (zh)
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TW201608222A (zh
Inventor
北尚憲
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尼康股份有限公司
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0221—Testing optical properties by determining the optical axis or position of lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0228—Testing optical properties by measuring refractive power
    • G01M11/0235—Testing optical properties by measuring refractive power by measuring multiple properties of lenses, automatic lens meters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
TW104138470A 2010-02-25 2011-02-16 A method of measuring a photomask transmittance distribution, a program, a computer-readable medium, a control method of an exposure apparatus, an exposure method, and an exposure apparatus, and a device manufacturing method TWI548868B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30808710P 2010-02-25 2010-02-25
US13/011,320 US9389519B2 (en) 2010-02-25 2011-01-21 Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method

Publications (2)

Publication Number Publication Date
TW201608222A TW201608222A (zh) 2016-03-01
TWI548868B true TWI548868B (zh) 2016-09-11

Family

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Family Applications (4)

Application Number Title Priority Date Filing Date
TW104138470A TWI548868B (zh) 2010-02-25 2011-02-16 A method of measuring a photomask transmittance distribution, a program, a computer-readable medium, a control method of an exposure apparatus, an exposure method, and an exposure apparatus, and a device manufacturing method
TW107119872A TWI706125B (zh) 2010-02-25 2011-02-16 測量裝置及曝光裝置、以及元件製造方法
TW100105040A TWI515419B (zh) 2010-02-25 2011-02-16 光瞳透射率分布之測定方法、程式、電腦可讀取之媒體、曝光裝置之控制方法、曝光方法及曝光裝置、以及元件製造方法
TW105123218A TWI630378B (zh) 2010-02-25 2011-02-16 Measuring device and exposure device, and component manufacturing method

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW107119872A TWI706125B (zh) 2010-02-25 2011-02-16 測量裝置及曝光裝置、以及元件製造方法
TW100105040A TWI515419B (zh) 2010-02-25 2011-02-16 光瞳透射率分布之測定方法、程式、電腦可讀取之媒體、曝光裝置之控制方法、曝光方法及曝光裝置、以及元件製造方法
TW105123218A TWI630378B (zh) 2010-02-25 2011-02-16 Measuring device and exposure device, and component manufacturing method

Country Status (5)

Country Link
US (1) US9389519B2 (https=)
JP (2) JP5691608B2 (https=)
KR (1) KR20130054942A (https=)
TW (4) TWI548868B (https=)
WO (1) WO2011105307A1 (https=)

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CN102620917A (zh) * 2012-04-11 2012-08-01 长春理工大学 透射式光学元件光致热变形像质分析方法
KR102170864B1 (ko) * 2012-05-02 2020-10-28 가부시키가이샤 니콘 동공 휘도 분포의 평가 방법 및 개선 방법, 조명 광학계 및 그 조정 방법, 노광 장치, 노광 방법, 및 디바이스 제조 방법
JP5969848B2 (ja) * 2012-07-19 2016-08-17 キヤノン株式会社 露光装置、調整対象の調整量を求める方法、プログラム及びデバイスの製造方法
DE102013204466A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Messung einer optischen Symmetrieeigenschaft an einer Projektionsbelichtungsanlage
US11402629B2 (en) 2013-11-27 2022-08-02 Magic Leap, Inc. Separated pupil optical systems for virtual and augmented reality and methods for displaying images using same
CN111112618B (zh) * 2014-11-14 2022-09-16 株式会社尼康 造形装置及造形方法
WO2016179246A1 (en) 2015-05-04 2016-11-10 Magic Leap, Inc. Separated pupil optical systems for virtual and augmented reality and methods for displaying images using same
JP6783801B2 (ja) * 2015-05-20 2020-11-11 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系の測定方法及び測定配列
DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102017221005A1 (de) * 2017-11-23 2019-05-23 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Kalibrierung einer diffraktiven Messstruktur
CN110243572B (zh) * 2019-06-28 2021-07-27 中兴光电子技术有限公司 一种光波导群折射率测试装置和方法
CN113552773B (zh) * 2020-04-23 2023-02-10 上海微电子装备（集团）股份有限公司 光刻机、瞳面透过率分布检测装置及检测方法
US20240085268A1 (en) * 2022-09-14 2024-03-14 National Central University Optical wavefront measuring device and measuring method thereof
US20250132180A1 (en) * 2023-10-24 2025-04-24 Tokyo Electron Limited Wafer bow metrology system

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Also Published As

Publication number Publication date
TWI630378B (zh) 2018-07-21
US20110205514A1 (en) 2011-08-25
WO2011105307A1 (en) 2011-09-01
TWI515419B (zh) 2016-01-01
KR20130054942A (ko) 2013-05-27
US9389519B2 (en) 2016-07-12
JP5862992B2 (ja) 2016-02-16
JP5691608B2 (ja) 2015-04-01
TWI706125B (zh) 2020-10-01
JP2015144275A (ja) 2015-08-06
TW201835540A (zh) 2018-10-01
TW201140019A (en) 2011-11-16
TW201608222A (zh) 2016-03-01
TW201638571A (zh) 2016-11-01
JP2011176312A (ja) 2011-09-08

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