KR20130054942A - 동공 투과율 분포의 측정 방법 및 측정 장치, 노광 방법 및 노광 장치, 및 디바이스 제조 방법 - Google Patents

동공 투과율 분포의 측정 방법 및 측정 장치, 노광 방법 및 노광 장치, 및 디바이스 제조 방법 Download PDF

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Publication number
KR20130054942A
KR20130054942A KR1020127024951A KR20127024951A KR20130054942A KR 20130054942 A KR20130054942 A KR 20130054942A KR 1020127024951 A KR1020127024951 A KR 1020127024951A KR 20127024951 A KR20127024951 A KR 20127024951A KR 20130054942 A KR20130054942 A KR 20130054942A
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South Korea
Prior art keywords
pupil
optical system
diffraction
region
phase
Prior art date
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KR1020127024951A
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English (en)
Korean (ko)
Inventor
나오노리 기타
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가부시키가이샤 니콘
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Publication of KR20130054942A publication Critical patent/KR20130054942A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0221—Testing optical properties by determining the optical axis or position of lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0228—Testing optical properties by measuring refractive power
    • G01M11/0235—Testing optical properties by measuring refractive power by measuring multiple properties of lenses, automatic lens meters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
KR1020127024951A 2010-02-25 2011-02-14 동공 투과율 분포의 측정 방법 및 측정 장치, 노광 방법 및 노광 장치, 및 디바이스 제조 방법 Withdrawn KR20130054942A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US30808710P 2010-02-25 2010-02-25
US61/308,087 2010-02-25
US13/011,320 US9389519B2 (en) 2010-02-25 2011-01-21 Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
US13/011,320 2011-01-21
PCT/JP2011/053588 WO2011105307A1 (en) 2010-02-25 2011-02-14 Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method

Publications (1)

Publication Number Publication Date
KR20130054942A true KR20130054942A (ko) 2013-05-27

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KR1020127024951A Withdrawn KR20130054942A (ko) 2010-02-25 2011-02-14 동공 투과율 분포의 측정 방법 및 측정 장치, 노광 방법 및 노광 장치, 및 디바이스 제조 방법

Country Status (5)

Country Link
US (1) US9389519B2 (https=)
JP (2) JP5691608B2 (https=)
KR (1) KR20130054942A (https=)
TW (4) TWI548868B (https=)
WO (1) WO2011105307A1 (https=)

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KR102170864B1 (ko) * 2012-05-02 2020-10-28 가부시키가이샤 니콘 동공 휘도 분포의 평가 방법 및 개선 방법, 조명 광학계 및 그 조정 방법, 노광 장치, 노광 방법, 및 디바이스 제조 방법
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DE102016212477A1 (de) * 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102017221005A1 (de) * 2017-11-23 2019-05-23 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Kalibrierung einer diffraktiven Messstruktur
CN110243572B (zh) * 2019-06-28 2021-07-27 中兴光电子技术有限公司 一种光波导群折射率测试装置和方法
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Also Published As

Publication number Publication date
TWI630378B (zh) 2018-07-21
US20110205514A1 (en) 2011-08-25
WO2011105307A1 (en) 2011-09-01
TWI515419B (zh) 2016-01-01
US9389519B2 (en) 2016-07-12
JP5862992B2 (ja) 2016-02-16
JP5691608B2 (ja) 2015-04-01
TWI706125B (zh) 2020-10-01
JP2015144275A (ja) 2015-08-06
TW201835540A (zh) 2018-10-01
TW201140019A (en) 2011-11-16
TW201608222A (zh) 2016-03-01
TW201638571A (zh) 2016-11-01
TWI548868B (zh) 2016-09-11
JP2011176312A (ja) 2011-09-08

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