TWI547575B - 金屬薄膜及金屬薄膜形成用鉬合金濺鍍靶材 - Google Patents
金屬薄膜及金屬薄膜形成用鉬合金濺鍍靶材 Download PDFInfo
- Publication number
- TWI547575B TWI547575B TW103105379A TW103105379A TWI547575B TW I547575 B TWI547575 B TW I547575B TW 103105379 A TW103105379 A TW 103105379A TW 103105379 A TW103105379 A TW 103105379A TW I547575 B TWI547575 B TW I547575B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- thin film
- metal thin
- atom
- resistance
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013030810 | 2013-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201439347A TW201439347A (zh) | 2014-10-16 |
TWI547575B true TWI547575B (zh) | 2016-09-01 |
Family
ID=51307586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103105379A TWI547575B (zh) | 2013-02-20 | 2014-02-19 | 金屬薄膜及金屬薄膜形成用鉬合金濺鍍靶材 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6292466B2 (ja) |
KR (1) | KR101597018B1 (ja) |
CN (1) | CN103993262B (ja) |
TW (1) | TWI547575B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6823799B2 (ja) * | 2015-10-01 | 2021-02-03 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
JP6997945B2 (ja) * | 2016-12-27 | 2022-01-18 | 日立金属株式会社 | 積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 |
WO2019003941A1 (ja) * | 2017-06-29 | 2019-01-03 | 豊田合成 株式会社 | 装飾製品 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201006938A (en) * | 2008-04-28 | 2010-02-16 | Starck H C Inc | Molybdenum-niobium alloys, sputtering targets containing such alloys, methods of making such targets, thin films prepared therefrom and uses thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2828071B2 (ja) * | 1996-10-22 | 1998-11-25 | 三菱マテリアル株式会社 | 耐食性のすぐれた物理蒸着非晶質膜材 |
JPH10301499A (ja) * | 1997-04-22 | 1998-11-13 | Ulvac Seimaku Kk | ブランクス又はブラックマトリクス及びこれらの製造方法 |
JP4419036B2 (ja) | 2000-11-27 | 2010-02-24 | 三菱マテリアル株式会社 | ブラックマトリックス用遮光膜を形成するためのスパッタリングターゲット |
JP3859119B2 (ja) | 2000-12-22 | 2006-12-20 | 日立金属株式会社 | 電子部品用薄膜配線 |
JP4905618B2 (ja) | 2001-05-31 | 2012-03-28 | 株式会社東芝 | 配線形成用材料、配線形成用スパッタリングターゲット、配線薄膜及び電子部品 |
JP4496518B2 (ja) | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
JP2005289046A (ja) * | 2004-03-10 | 2005-10-20 | Asahi Glass Co Ltd | 配線付き基体形成用の積層体、配線付き基体およびその形成方法 |
CN100566505C (zh) * | 2004-09-01 | 2009-12-02 | 住友金属矿山株式会社 | 2层挠性基板及其制造方法 |
JP5203908B2 (ja) * | 2008-12-04 | 2013-06-05 | 新日鉄住金マテリアルズ株式会社 | Ni−Mo系合金スパッタリングターゲット板 |
-
2014
- 2014-01-28 JP JP2014013129A patent/JP6292466B2/ja active Active
- 2014-02-17 KR KR1020140017743A patent/KR101597018B1/ko active IP Right Grant
- 2014-02-19 TW TW103105379A patent/TWI547575B/zh active
- 2014-02-19 CN CN201410056816.6A patent/CN103993262B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201006938A (en) * | 2008-04-28 | 2010-02-16 | Starck H C Inc | Molybdenum-niobium alloys, sputtering targets containing such alloys, methods of making such targets, thin films prepared therefrom and uses thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20140104358A (ko) | 2014-08-28 |
JP2014185393A (ja) | 2014-10-02 |
CN103993262B (zh) | 2016-04-06 |
TW201439347A (zh) | 2014-10-16 |
KR101597018B1 (ko) | 2016-02-23 |
CN103993262A (zh) | 2014-08-20 |
JP6292466B2 (ja) | 2018-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101358529B1 (ko) | 전자부품용 적층 배선막 및 피복층 형성용 스퍼터링 타겟재 | |
TWI583801B (zh) | A sputtering target for forming a wiring film for an electronic component and a coating layer material | |
TWI604066B (zh) | A multilayer wiring film for electronic components and a sputtering target for forming a coating layer | |
TWI498440B (zh) | 電子零件用金屬薄膜及金屬薄膜形成用Mo合金濺鍍靶材 | |
TWI547575B (zh) | 金屬薄膜及金屬薄膜形成用鉬合金濺鍍靶材 | |
TWI576454B (zh) | Spraying target for forming wiring film and coating layer for electronic parts | |
JP6361957B2 (ja) | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 | |
TWI493624B (zh) | 電子零件用積層配線膜及被覆層形成用濺鍍靶材 | |
KR101337141B1 (ko) | 전자부품용 적층 배선막 | |
JP2005091543A (ja) | 薄膜配線層 | |
TWI482256B (zh) | 電子零件用積層配線膜 | |
JP2005093571A (ja) | 薄膜配線層 |