TWI540662B - 基板處理裝置及基板處理系統 - Google Patents

基板處理裝置及基板處理系統 Download PDF

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Publication number
TWI540662B
TWI540662B TW101136727A TW101136727A TWI540662B TW I540662 B TWI540662 B TW I540662B TW 101136727 A TW101136727 A TW 101136727A TW 101136727 A TW101136727 A TW 101136727A TW I540662 B TWI540662 B TW I540662B
Authority
TW
Taiwan
Prior art keywords
ion beam
substrate
substrate processing
upper plate
processing apparatus
Prior art date
Application number
TW101136727A
Other languages
English (en)
Chinese (zh)
Other versions
TW201327706A (zh
Inventor
Kyu Yong Wi
Original Assignee
Wonik Ips Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wonik Ips Co Ltd filed Critical Wonik Ips Co Ltd
Publication of TW201327706A publication Critical patent/TW201327706A/zh
Application granted granted Critical
Publication of TWI540662B publication Critical patent/TWI540662B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/06—Screens for shielding; Masks interposed in the electron stream
    • H01J29/07—Shadow masks for colour television tubes
    • H01J29/076—Shadow masks for colour television tubes characterised by the shape or distribution of beam-passing apertures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
TW101136727A 2011-12-23 2012-10-04 基板處理裝置及基板處理系統 TWI540662B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110141228A KR101769493B1 (ko) 2011-12-23 2011-12-23 기판처리장치 및 그를 가지는 기판처리시스템

Publications (2)

Publication Number Publication Date
TW201327706A TW201327706A (zh) 2013-07-01
TWI540662B true TWI540662B (zh) 2016-07-01

Family

ID=48637705

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101136727A TWI540662B (zh) 2011-12-23 2012-10-04 基板處理裝置及基板處理系統

Country Status (4)

Country Link
JP (1) JP6190579B2 (ko)
KR (1) KR101769493B1 (ko)
CN (1) CN103177924B (ko)
TW (1) TWI540662B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108766877A (zh) * 2018-04-19 2018-11-06 中国科学院上海应用物理研究所 一种具有周期性的表面电势梯度的材料的制备方法
US20220028707A1 (en) * 2020-07-21 2022-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Warm wafer after ion cryo-implantation

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283467A (ja) * 1985-10-09 1987-04-16 Sharp Corp パレツト移動型スパツタリング装置
JPH03269940A (ja) * 1990-03-19 1991-12-02 Hitachi Ltd イオン注入装置及びそれを用いた半導体集積回路装置の製造方法
JPH0581268U (ja) * 1992-04-07 1993-11-05 住友金属工業株式会社 イオン注入機用試料支持台
JPH0636198U (ja) * 1992-10-06 1994-05-13 日新電機株式会社 真空処理装置
US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
JPH1027568A (ja) * 1996-07-11 1998-01-27 Nissin Electric Co Ltd イオン注入装置
JPH1060624A (ja) * 1996-08-20 1998-03-03 Matsushita Electric Ind Co Ltd スパッタリング装置
JP3239779B2 (ja) * 1996-10-29 2001-12-17 日新電機株式会社 基板処理装置および基板処理方法
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US6194734B1 (en) * 1999-02-19 2001-02-27 Axcelis Technologies, Inc. Method and system for operating a variable aperture in an ion implanter
JP2000285846A (ja) * 1999-03-30 2000-10-13 Sony Corp イオン注入装置
NL1015155C2 (nl) * 2000-05-11 2001-11-13 Tno Elektronenstraallithografie.
JP2002155358A (ja) * 2000-11-16 2002-05-31 Ishikawajima Harima Heavy Ind Co Ltd イオンシャワー装置
CN1322538C (zh) * 2001-01-18 2007-06-20 瓦里安半导体设备联合公司 具有包括可调传动限制缝隙的分隔墙的靶腔的离子注入机
US6815696B2 (en) * 2002-05-29 2004-11-09 Ibis Technology Corporation Beam stop for use in an ion implantation system
JP4371011B2 (ja) * 2004-09-02 2009-11-25 日新イオン機器株式会社 イオンビーム照射装置およびイオンビーム照射方法
KR100734308B1 (ko) * 2006-01-26 2007-07-02 삼성전자주식회사 가변 스크린 어퍼쳐를 갖는 이온 주입 시스템 및 이를이용한 이온 주입 방법
GB2443279A (en) * 2006-07-18 2008-04-30 Applied Materials Inc Beam stop for an ion implanter
US7605382B2 (en) * 2006-10-31 2009-10-20 Nissin Ion Equipment Co., Ltd. Ion implanter
US7977628B2 (en) * 2008-06-25 2011-07-12 Axcelis Technologies, Inc. System and method for reducing particles and contamination by matching beam complementary aperture shapes to beam shapes
US7816239B2 (en) * 2008-11-20 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Technique for manufacturing a solar cell
JP2010174345A (ja) * 2009-01-30 2010-08-12 Seiko Epson Corp 成膜装置
JP2009200048A (ja) * 2009-04-06 2009-09-03 Toyo Tanso Kk イオン注入装置用黒鉛部材
US8198610B2 (en) * 2009-10-20 2012-06-12 Advanced Ion Beam Technology, Inc. Ion implanter with variable aperture and ion implant method thereof
JP5311681B2 (ja) * 2010-05-26 2013-10-09 日新イオン機器株式会社 イオン注入装置

Also Published As

Publication number Publication date
TW201327706A (zh) 2013-07-01
KR20130073401A (ko) 2013-07-03
KR101769493B1 (ko) 2017-08-30
JP2013134986A (ja) 2013-07-08
CN103177924A (zh) 2013-06-26
JP6190579B2 (ja) 2017-08-30
CN103177924B (zh) 2017-06-09

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