TWI538245B - 具疊層式磷層的發光二極體晶圓 - Google Patents
具疊層式磷層的發光二極體晶圓 Download PDFInfo
- Publication number
- TWI538245B TWI538245B TW100114123A TW100114123A TWI538245B TW I538245 B TWI538245 B TW I538245B TW 100114123 A TW100114123 A TW 100114123A TW 100114123 A TW100114123 A TW 100114123A TW I538245 B TWI538245 B TW I538245B
- Authority
- TW
- Taiwan
- Prior art keywords
- led
- layer
- phosphor
- wafer
- carrier substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/771,809 US8232117B2 (en) | 2010-04-30 | 2010-04-30 | LED wafer with laminated phosphor layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201203596A TW201203596A (en) | 2012-01-16 |
| TWI538245B true TWI538245B (zh) | 2016-06-11 |
Family
ID=44120320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100114123A TWI538245B (zh) | 2010-04-30 | 2011-04-22 | 具疊層式磷層的發光二極體晶圓 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8232117B2 (enExample) |
| EP (1) | EP2564435B1 (enExample) |
| JP (1) | JP5927179B2 (enExample) |
| KR (1) | KR101813099B1 (enExample) |
| CN (1) | CN102906887B (enExample) |
| TW (1) | TWI538245B (enExample) |
| WO (1) | WO2011135528A1 (enExample) |
Families Citing this family (52)
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|---|---|---|---|---|
| US20110284866A1 (en) * | 2005-01-11 | 2011-11-24 | Tran Chuong A | Light-emitting diode (led) structure having a wavelength-converting layer and method of producing |
| US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
| KR20120061376A (ko) * | 2010-12-03 | 2012-06-13 | 삼성엘이디 주식회사 | 반도체 발광 소자에 형광체를 도포하는 방법 |
| KR101725220B1 (ko) * | 2010-12-22 | 2017-04-10 | 삼성전자 주식회사 | 형광체 도포 방법 및 형광체 도포 장치 |
| DE102011013369A1 (de) * | 2010-12-30 | 2012-07-05 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen |
| JP5670249B2 (ja) * | 2011-04-14 | 2015-02-18 | 日東電工株式会社 | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
| US9666764B2 (en) | 2012-04-09 | 2017-05-30 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die |
| US9653643B2 (en) * | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
| JP6013685B2 (ja) | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9035344B2 (en) * | 2011-09-14 | 2015-05-19 | VerLASE TECHNOLOGIES LLC | Phosphors for use with LEDs and other optoelectronic devices |
| KR101817807B1 (ko) | 2011-09-20 | 2018-01-11 | 엘지이노텍 주식회사 | 발광소자 패키지 및 이를 포함하는 조명시스템 |
| DE102012101211A1 (de) * | 2012-02-15 | 2013-08-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
| US10276758B2 (en) | 2012-03-19 | 2019-04-30 | Lumileds Llc | Singulaton of light emitting devices before and after application of phosphor |
| US9343613B2 (en) | 2012-03-29 | 2016-05-17 | Koninklijke Philips N.V. | Phosphor in inorganic binder for LED applications |
| KR102228997B1 (ko) * | 2012-03-29 | 2021-03-18 | 루미리즈 홀딩 비.브이. | Led 응용들을 위한 무기 바인더 내의 형광체 |
| US9847445B2 (en) * | 2012-04-05 | 2017-12-19 | Koninklijke Philips N.V. | LED thin-film device partial singulation prior to substrate thinning or removal |
| WO2013171632A1 (en) * | 2012-05-17 | 2013-11-21 | Koninklijke Philips N.V. | Method of separating a wafer of semiconductor devices |
| US20140001949A1 (en) * | 2012-06-29 | 2014-01-02 | Nitto Denko Corporation | Phosphor layer-covered led, producing method thereof, and led device |
| US20140001948A1 (en) * | 2012-06-29 | 2014-01-02 | Nitto Denko Corporation | Reflecting layer-phosphor layer-covered led, producing method thereof, led device, and producing method thereof |
| US20140009060A1 (en) * | 2012-06-29 | 2014-01-09 | Nitto Denko Corporation | Phosphor layer-covered led, producing method thereof, and led device |
| US8876312B2 (en) | 2013-03-05 | 2014-11-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Lighting device and apparatus with spectral converter within a casing |
| US8928219B2 (en) | 2013-03-05 | 2015-01-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Lighting device with spectral converter |
| DE102013212247B4 (de) * | 2013-06-26 | 2021-10-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| EP3118904B1 (en) | 2013-07-18 | 2023-07-05 | Lumileds LLC | Dicing a wafer of light emitting semiconductor devices |
| CN105874618A (zh) * | 2014-01-08 | 2016-08-17 | 皇家飞利浦有限公司 | 经波长转换的半导体发光器件 |
| KR102145208B1 (ko) | 2014-06-10 | 2020-08-19 | 삼성전자주식회사 | 발광소자 패키지 제조방법 |
| CN106575693B (zh) | 2014-06-19 | 2020-07-31 | 亮锐控股有限公司 | 具有小源尺寸的波长转换发光设备 |
| KR102345751B1 (ko) | 2015-01-05 | 2022-01-03 | 삼성전자주식회사 | 반도체 발광소자 패키지 및 그 제조 방법 |
| WO2017099905A1 (en) | 2015-12-07 | 2017-06-15 | Glo Ab | Laser lift-off on isolated iii-nitride light islands for inter-substrate led transfer |
| JP2017157593A (ja) | 2016-02-29 | 2017-09-07 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 発光ダイオード、発光ダイオードの製造方法、発光ダイオード表示装置及び発光ダイオード表示装置の製造方法 |
| US10193031B2 (en) | 2016-03-11 | 2019-01-29 | Rohinni, LLC | Method for applying phosphor to light emitting diodes and apparatus thereof |
| DE102016108682A1 (de) * | 2016-05-11 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
| CN106876551A (zh) * | 2016-12-30 | 2017-06-20 | 东莞中之光电股份有限公司 | 芯片级led封装工艺 |
| CN106876528A (zh) * | 2016-12-30 | 2017-06-20 | 东莞中之光电股份有限公司 | Led封装制作工艺 |
| WO2018154868A1 (ja) * | 2017-02-27 | 2018-08-30 | パナソニックIpマネジメント株式会社 | 波長変換部材 |
| US10686158B2 (en) * | 2017-03-31 | 2020-06-16 | Innolux Corporation | Display device |
| US10964851B2 (en) * | 2017-08-30 | 2021-03-30 | SemiLEDs Optoelectronics Co., Ltd. | Single light emitting diode (LED) structure |
| US10854794B2 (en) | 2017-12-20 | 2020-12-01 | Lumileds Llc | Monolithic LED array structure |
| US10998273B2 (en) | 2017-12-22 | 2021-05-04 | Hrl Laboratories, Llc | Hybrid integrated circuit architecture |
| US11536800B2 (en) | 2017-12-22 | 2022-12-27 | Hrl Laboratories, Llc | Method and apparatus to increase radar range |
| US11527482B2 (en) | 2017-12-22 | 2022-12-13 | Hrl Laboratories, Llc | Hybrid integrated circuit architecture |
| US10957537B2 (en) * | 2018-11-12 | 2021-03-23 | Hrl Laboratories, Llc | Methods to design and uniformly co-fabricate small vias and large cavities through a substrate |
| US10910433B2 (en) | 2018-12-31 | 2021-02-02 | Lumileds Llc | Pixelated LED array with optical elements |
| JP7466933B2 (ja) * | 2018-12-31 | 2024-04-15 | ナノエックス | 両面発光ledチップ |
| US12183866B2 (en) | 2019-07-19 | 2024-12-31 | Lg Electronics Inc. | Display device using micro LED, and manufacturing method therefor |
| US11972970B1 (en) | 2020-09-01 | 2024-04-30 | Hrl Laboratories, Llc | Singulation process for chiplets |
| US11527684B2 (en) * | 2020-12-04 | 2022-12-13 | Lumileds Llc | Patterned downconverter and adhesive film for micro-LED, mini-LED downconverter mass transfer |
| CN113611786B (zh) * | 2021-08-02 | 2022-09-27 | 东莞市中麒光电技术有限公司 | 剥离良率高且方便倒膜的led芯片巨量转移方法 |
| CN113764551B (zh) * | 2021-09-07 | 2023-01-03 | 东莞市中麒光电技术有限公司 | 一种led芯片转移方法 |
| CN113764550B (zh) * | 2021-09-07 | 2023-01-24 | 东莞市中麒光电技术有限公司 | 一种防止led芯片损伤的转移方法 |
| US12463109B2 (en) | 2021-10-15 | 2025-11-04 | Hrl Laboratories, Llc | Thermal isolation between embedded MECA modules |
| CN116544770A (zh) * | 2022-01-26 | 2023-08-04 | 宁波飞芯电子科技有限公司 | 一种激光器的封装结构 |
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| US6194742B1 (en) | 1998-06-05 | 2001-02-27 | Lumileds Lighting, U.S., Llc | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
| US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
| JP3747807B2 (ja) * | 2001-06-12 | 2006-02-22 | ソニー株式会社 | 素子実装基板及び不良素子の修復方法 |
| US6693041B2 (en) * | 2001-06-20 | 2004-02-17 | International Business Machines Corporation | Self-aligned STI for narrow trenches |
| JPWO2003034508A1 (ja) * | 2001-10-12 | 2005-02-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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| TWI246783B (en) | 2003-09-24 | 2006-01-01 | Matsushita Electric Works Ltd | Light-emitting device and its manufacturing method |
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| JP4496774B2 (ja) | 2003-12-22 | 2010-07-07 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
| US7259030B2 (en) * | 2004-03-29 | 2007-08-21 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
| US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
| US7754507B2 (en) | 2005-06-09 | 2010-07-13 | Philips Lumileds Lighting Company, Llc | Method of removing the growth substrate of a semiconductor light emitting device |
| US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
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| TWI420691B (zh) * | 2006-11-20 | 2013-12-21 | 尼康股份有限公司 | Led裝置及其製造方法 |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
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| JP5158472B2 (ja) * | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
| US20090053869A1 (en) * | 2007-08-22 | 2009-02-26 | Infineon Technologies Austria Ag | Method for producing an integrated circuit including a trench transistor and integrated circuit |
| US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
| US20090173958A1 (en) | 2008-01-04 | 2009-07-09 | Cree, Inc. | Light emitting devices with high efficiency phospor structures |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| US7859000B2 (en) | 2008-04-10 | 2010-12-28 | Cree, Inc. | LEDs using single crystalline phosphor and methods of fabricating same |
| US8193565B2 (en) * | 2008-04-18 | 2012-06-05 | Fairchild Semiconductor Corporation | Multi-level lateral floating coupled capacitor transistor structures |
| US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
| US7973327B2 (en) * | 2008-09-02 | 2011-07-05 | Bridgelux, Inc. | Phosphor-converted LED |
-
2010
- 2010-04-30 US US12/771,809 patent/US8232117B2/en active Active
-
2011
- 2011-04-22 TW TW100114123A patent/TWI538245B/zh active
- 2011-04-27 WO PCT/IB2011/051849 patent/WO2011135528A1/en not_active Ceased
- 2011-04-27 KR KR1020127031301A patent/KR101813099B1/ko active Active
- 2011-04-27 EP EP11722561.5A patent/EP2564435B1/en active Active
- 2011-04-27 CN CN201180021821.8A patent/CN102906887B/zh active Active
- 2011-04-27 JP JP2013506794A patent/JP5927179B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2564435A1 (en) | 2013-03-06 |
| EP2564435B1 (en) | 2017-09-27 |
| CN102906887A (zh) | 2013-01-30 |
| KR101813099B1 (ko) | 2017-12-29 |
| TW201203596A (en) | 2012-01-16 |
| JP2013526052A (ja) | 2013-06-20 |
| WO2011135528A1 (en) | 2011-11-03 |
| CN102906887B (zh) | 2016-05-11 |
| US8232117B2 (en) | 2012-07-31 |
| KR20130095190A (ko) | 2013-08-27 |
| JP5927179B2 (ja) | 2016-06-01 |
| US20110266569A1 (en) | 2011-11-03 |
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