JP5927179B2 - 積層された蛍光体層を有するｌｅｄのウエハー - Google Patents

積層された蛍光体層を有するｌｅｄのウエハー Download PDF

Info

Publication number
JP5927179B2
JP5927179B2 JP2013506794A JP2013506794A JP5927179B2 JP 5927179 B2 JP5927179 B2 JP 5927179B2 JP 2013506794 A JP2013506794 A JP 2013506794A JP 2013506794 A JP2013506794 A JP 2013506794A JP 5927179 B2 JP5927179 B2 JP 5927179B2
Authority
JP
Japan
Prior art keywords
led
layer
phosphor
carrier substrate
phosphor sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013506794A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013526052A5 (enExample
JP2013526052A (ja
Inventor
グリゴリー ベイシン
グリゴリー ベイシン
パウル エス マルティン
パウル エス マルティン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of JP2013526052A publication Critical patent/JP2013526052A/ja
Publication of JP2013526052A5 publication Critical patent/JP2013526052A5/ja
Application granted granted Critical
Publication of JP5927179B2 publication Critical patent/JP5927179B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2013506794A 2010-04-30 2011-04-27 積層された蛍光体層を有するｌｅｄのウエハー Active JP5927179B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/771,809 US8232117B2 (en) 2010-04-30 2010-04-30 LED wafer with laminated phosphor layer
US12/771,809 2010-04-30
PCT/IB2011/051849 WO2011135528A1 (en) 2010-04-30 2011-04-27 Led wafer with laminated phosphor layer

Publications (3)

Publication Number Publication Date
JP2013526052A JP2013526052A (ja) 2013-06-20
JP2013526052A5 JP2013526052A5 (enExample) 2014-06-19
JP5927179B2 true JP5927179B2 (ja) 2016-06-01

Family

ID=44120320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013506794A Active JP5927179B2 (ja) 2010-04-30 2011-04-27 積層された蛍光体層を有するｌｅｄのウエハー

Country Status (7)

Country Link
US (1) US8232117B2 (enExample)
EP (1) EP2564435B1 (enExample)
JP (1) JP5927179B2 (enExample)
KR (1) KR101813099B1 (enExample)
CN (1) CN102906887B (enExample)
TW (1) TWI538245B (enExample)
WO (1) WO2011135528A1 (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110284866A1 (en) * 2005-01-11 2011-11-24 Tran Chuong A Light-emitting diode (led) structure having a wavelength-converting layer and method of producing
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
KR20120061376A (ko) * 2010-12-03 2012-06-13 삼성엘이디 주식회사 반도체 발광 소자에 형광체를 도포하는 방법
KR101725220B1 (ko) * 2010-12-22 2017-04-10 삼성전자 주식회사 형광체 도포 방법 및 형광체 도포 장치
DE102011013369A1 (de) * 2010-12-30 2012-07-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen
JP5670249B2 (ja) * 2011-04-14 2015-02-18 日東電工株式会社 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置
US9666764B2 (en) 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
US9653643B2 (en) * 2012-04-09 2017-05-16 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US9035344B2 (en) * 2011-09-14 2015-05-19 VerLASE TECHNOLOGIES LLC Phosphors for use with LEDs and other optoelectronic devices
KR101817807B1 (ko) 2011-09-20 2018-01-11 엘지이노텍 주식회사 발광소자 패키지 및 이를 포함하는 조명시스템
DE102012101211A1 (de) * 2012-02-15 2013-08-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
US10276758B2 (en) 2012-03-19 2019-04-30 Lumileds Llc Singulaton of light emitting devices before and after application of phosphor
US9343613B2 (en) 2012-03-29 2016-05-17 Koninklijke Philips N.V. Phosphor in inorganic binder for LED applications
KR102228997B1 (ko) * 2012-03-29 2021-03-18 루미리즈 홀딩 비.브이. Led 응용들을 위한 무기 바인더 내의 형광체
US9847445B2 (en) * 2012-04-05 2017-12-19 Koninklijke Philips N.V. LED thin-film device partial singulation prior to substrate thinning or removal
WO2013171632A1 (en) * 2012-05-17 2013-11-21 Koninklijke Philips N.V. Method of separating a wafer of semiconductor devices
US20140001949A1 (en) * 2012-06-29 2014-01-02 Nitto Denko Corporation Phosphor layer-covered led, producing method thereof, and led device
US20140001948A1 (en) * 2012-06-29 2014-01-02 Nitto Denko Corporation Reflecting layer-phosphor layer-covered led, producing method thereof, led device, and producing method thereof
US20140009060A1 (en) * 2012-06-29 2014-01-09 Nitto Denko Corporation Phosphor layer-covered led, producing method thereof, and led device
US8876312B2 (en) 2013-03-05 2014-11-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device and apparatus with spectral converter within a casing
US8928219B2 (en) 2013-03-05 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Lighting device with spectral converter
DE102013212247B4 (de) * 2013-06-26 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
EP3118904B1 (en) 2013-07-18 2023-07-05 Lumileds LLC Dicing a wafer of light emitting semiconductor devices
CN105874618A (zh) * 2014-01-08 2016-08-17 皇家飞利浦有限公司 经波长转换的半导体发光器件
KR102145208B1 (ko) 2014-06-10 2020-08-19 삼성전자주식회사 발광소자 패키지 제조방법
CN106575693B (zh) 2014-06-19 2020-07-31 亮锐控股有限公司 具有小源尺寸的波长转换发光设备
KR102345751B1 (ko) 2015-01-05 2022-01-03 삼성전자주식회사 반도체 발광소자 패키지 및 그 제조 방법
WO2017099905A1 (en) 2015-12-07 2017-06-15 Glo Ab Laser lift-off on isolated iii-nitride light islands for inter-substrate led transfer
JP2017157593A (ja) 2016-02-29 2017-09-07 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード、発光ダイオードの製造方法、発光ダイオード表示装置及び発光ダイオード表示装置の製造方法
US10193031B2 (en) 2016-03-11 2019-01-29 Rohinni, LLC Method for applying phosphor to light emitting diodes and apparatus thereof
DE102016108682A1 (de) * 2016-05-11 2017-11-16 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN106876551A (zh) * 2016-12-30 2017-06-20 东莞中之光电股份有限公司 芯片级led封装工艺
CN106876528A (zh) * 2016-12-30 2017-06-20 东莞中之光电股份有限公司 Led封装制作工艺
WO2018154868A1 (ja) * 2017-02-27 2018-08-30 パナソニックＩｐマネジメント株式会社 波長変換部材
US10686158B2 (en) * 2017-03-31 2020-06-16 Innolux Corporation Display device
US10964851B2 (en) * 2017-08-30 2021-03-30 SemiLEDs Optoelectronics Co., Ltd. Single light emitting diode (LED) structure
US10854794B2 (en) 2017-12-20 2020-12-01 Lumileds Llc Monolithic LED array structure
US10998273B2 (en) 2017-12-22 2021-05-04 Hrl Laboratories, Llc Hybrid integrated circuit architecture
US11536800B2 (en) 2017-12-22 2022-12-27 Hrl Laboratories, Llc Method and apparatus to increase radar range
US11527482B2 (en) 2017-12-22 2022-12-13 Hrl Laboratories, Llc Hybrid integrated circuit architecture
US10957537B2 (en) * 2018-11-12 2021-03-23 Hrl Laboratories, Llc Methods to design and uniformly co-fabricate small vias and large cavities through a substrate
US10910433B2 (en) 2018-12-31 2021-02-02 Lumileds Llc Pixelated LED array with optical elements
JP7466933B2 (ja) * 2018-12-31 2024-04-15 ナノエックス 両面発光ｌｅｄチップ
US12183866B2 (en) 2019-07-19 2024-12-31 Lg Electronics Inc. Display device using micro LED, and manufacturing method therefor
US11972970B1 (en) 2020-09-01 2024-04-30 Hrl Laboratories, Llc Singulation process for chiplets
US11527684B2 (en) * 2020-12-04 2022-12-13 Lumileds Llc Patterned downconverter and adhesive film for micro-LED, mini-LED downconverter mass transfer
CN113611786B (zh) * 2021-08-02 2022-09-27 东莞市中麒光电技术有限公司 剥离良率高且方便倒膜的led芯片巨量转移方法
CN113764551B (zh) * 2021-09-07 2023-01-03 东莞市中麒光电技术有限公司 一种led芯片转移方法
CN113764550B (zh) * 2021-09-07 2023-01-24 东莞市中麒光电技术有限公司 一种防止led芯片损伤的转移方法
US12463109B2 (en) 2021-10-15 2025-11-04 Hrl Laboratories, Llc Thermal isolation between embedded MECA modules
CN116544770A (zh) * 2022-01-26 2023-08-04 宁波飞芯电子科技有限公司 一种激光器的封装结构

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194742B1 (en) 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP3747807B2 (ja) * 2001-06-12 2006-02-22 ソニー株式会社 素子実装基板及び不良素子の修復方法
US6693041B2 (en) * 2001-06-20 2004-02-17 International Business Machines Corporation Self-aligned STI for narrow trenches
JPWO2003034508A1 (ja) * 2001-10-12 2005-02-03 日亜化学工業株式会社 発光装置及びその製造方法
EP1556904B1 (de) * 2002-10-30 2018-12-05 OSRAM Opto Semiconductors GmbH Verfahren zum herstellen einer leuchtdioden-lichtquelle mit lumineszenz-konversionselement
TWI246783B (en) 2003-09-24 2006-01-01 Matsushita Electric Works Ltd Light-emitting device and its manufacturing method
US7008861B2 (en) * 2003-12-11 2006-03-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
US7259030B2 (en) * 2004-03-29 2007-08-21 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US7754507B2 (en) 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US7968379B2 (en) 2006-03-09 2011-06-28 SemiLEDs Optoelectronics Co., Ltd. Method of separating semiconductor dies
US7452739B2 (en) * 2006-03-09 2008-11-18 Semi-Photonics Co., Ltd. Method of separating semiconductor dies
TWI420691B (zh) * 2006-11-20 2013-12-21 尼康股份有限公司 Ｌｅｄ裝置及其製造方法
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US20080225549A1 (en) * 2007-02-26 2008-09-18 Mahendra Dassanayake Linear Optic Light Coupler
JP5186800B2 (ja) * 2007-04-28 2013-04-24 日亜化学工業株式会社 窒化物半導体発光素子、これを備える発光装置及び窒化物半導体発光素子の製造方法
JP5158472B2 (ja) * 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
US20090053869A1 (en) * 2007-08-22 2009-02-26 Infineon Technologies Austria Ag Method for producing an integrated circuit including a trench transistor and integrated circuit
US20090140279A1 (en) * 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
US20090173958A1 (en) 2008-01-04 2009-07-09 Cree, Inc. Light emitting devices with high efficiency phospor structures
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US7859000B2 (en) 2008-04-10 2010-12-28 Cree, Inc. LEDs using single crystalline phosphor and methods of fabricating same
US8193565B2 (en) * 2008-04-18 2012-06-05 Fairchild Semiconductor Corporation Multi-level lateral floating coupled capacitor transistor structures
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US7973327B2 (en) * 2008-09-02 2011-07-05 Bridgelux, Inc. Phosphor-converted LED

Also Published As

Publication number Publication date
EP2564435A1 (en) 2013-03-06
EP2564435B1 (en) 2017-09-27
CN102906887A (zh) 2013-01-30
KR101813099B1 (ko) 2017-12-29
TW201203596A (en) 2012-01-16
TWI538245B (zh) 2016-06-11
JP2013526052A (ja) 2013-06-20
WO2011135528A1 (en) 2011-11-03
CN102906887B (zh) 2016-05-11
US8232117B2 (en) 2012-07-31
KR20130095190A (ko) 2013-08-27
US20110266569A1 (en) 2011-11-03

Similar Documents

Publication Publication Date Title
JP5927179B2 (ja) 積層された蛍光体層を有するｌｅｄのウエハー
TWI437724B (zh) 基板剝離之強健發光二極體結構
TWI415290B (zh) 在發光二極體上有磷光體的層壓密封膜
JP6203759B2 (ja) Ｌｅｄチップの製造方法
TWI521746B (zh) 發光裝置及其製造方法
JP6237181B2 (ja) 発光装置の製造方法
CN103222073B (zh) 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法
EP2400566B1 (en) Semiconductor light emitting device, lighting module, lighting apparatus
TWI360900B (en) Semiconductor light emitting device, lighting modu
CN104396035A (zh) 通过透明间隔物从led分离的磷光体
JP2014522129A (ja) スロット内に形成される反射壁部を備えるｌｅｄ混合チャンバ
KR20120106624A (ko) 반도체 발광 장치 웨이퍼 및 반도체 발광 장치의 제조 방법
TWI740212B (zh) 微型發光二極體晶片的製作方法
JP2003023180A (ja) 化合物半導体発光素子及びその製造方法
JP5346909B2 (ja) 半導体発光装置、照明モジュール、照明装置、および表示素子
CN115621377A (zh) 微型led芯片的转移方法、显示模组和显示装置
JP2018011088A (ja) 発光装置
TW200843131A (en) High power indium-gallium-nitrogen (InGaN) white light grain
TW201637233A (zh) 薄膜型發光二極體的製作方法及薄膜型發光二極體

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140424

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140424

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150223

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150225

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150415

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20150508

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150812

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20151013

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160204

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20160212

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160329

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160425

R150 Certificate of patent or registration of utility model

Ref document number: 5927179

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250