JP5927179B2 - 積層された蛍光体層を有するledのウエハー - Google Patents
積層された蛍光体層を有するledのウエハー Download PDFInfo
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- JP5927179B2 JP5927179B2 JP2013506794A JP2013506794A JP5927179B2 JP 5927179 B2 JP5927179 B2 JP 5927179B2 JP 2013506794 A JP2013506794 A JP 2013506794A JP 2013506794 A JP2013506794 A JP 2013506794A JP 5927179 B2 JP5927179 B2 JP 5927179B2
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- led
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- phosphor
- carrier substrate
- phosphor sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Description
Claims (11)
- 発光ダイオードのデバイスを製造するための方法であって、
LED層を成長基板上に成長させるステップと、
当該LED層とは別に予め成形された蛍光体シートを供給するステップと、
接着材を使用して前記LED層を担体基板に接着するステップと、
当該担体基板が前記LED層に対する機械的支持を提供する間に、前記成長基板を取り除くステップと、
前記予め成形された蛍光体シートを前記LED層の露出面に積層するステップと、
重なっている蛍光体層を各々が有する個々のLEDチップを作り出すために、前記蛍光体シート及び前記LED層を賽の目に切断するステップと、
前記LED層を前記接着材から取り外すステップと、
前記LEDチップを前記担体基板から取り外すステップと、
前記担体基板を伸縮性のある接着材シートの上にマウントするステップと、
を含み、
前記蛍光体シート及び前記LED層を賽の目に切断するステップは、前記担体基板を賽の目に切断するが、前記伸縮性のある接着材シートは切断しない、
方法。 - 前記LED層がn-層及びp-層を有する請求項1の方法であって、前記LED層を前記担体基板に付着するステップに先立ち、前記n-層及び前記p-層と接触する金属電極を形成するステップを更に含む、方法。
- 前記LED層を前記担体基板に接着するステップが、前記金属電極の少なくとも幾つかを前記担体基板に接着するステップを含む、請求項2に記載の方法。
- 前記LEDチップが励起された場合に当該LEDチップが白色光を発するように、前記LED層は、励起された場合に青色光を発し、かつ、前記蛍光体シートは、当該青色光により励起された場合に赤色光の波長及び緑色光の波長を発する、請求項1に記載の方法。
- 前記蛍光体シートがYAG系蛍光体を有する、請求項4に記載の方法。
- 前記蛍光体シートが前記成長基板の面積と同じか、それより大きな面積である、請求項1に記載の方法。
- 前記蛍光体シートが均一な厚さを有する、請求項1に記載の方法。
- 前記成長基板を取り除くステップが、レーザリフトオフ・プロセスを用いて当該成長基板を取り除くステップを含む、請求項1に記載の方法。
- 前記接着材が、紫外線、熱、又は溶剤のうちの少なくとも一つによって剥離可能な接着材を含む、請求項1に記載の方法。
- サブマウント・ウエハー上にある電極を前記LEDチップの対応する電極へとつなげることによって前記LEDチップを当該サブマウント・ウエハー上に載置するステップ、を更に含む、請求項1に記載の方法。
- 前記LEDチップを個々に前記担体基板から取り外すために取り外し-取り付け機械を使用するステップを更に含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/771,809 US8232117B2 (en) | 2010-04-30 | 2010-04-30 | LED wafer with laminated phosphor layer |
US12/771,809 | 2010-04-30 | ||
PCT/IB2011/051849 WO2011135528A1 (en) | 2010-04-30 | 2011-04-27 | Led wafer with laminated phosphor layer |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013526052A JP2013526052A (ja) | 2013-06-20 |
JP2013526052A5 JP2013526052A5 (ja) | 2014-06-19 |
JP5927179B2 true JP5927179B2 (ja) | 2016-06-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013506794A Active JP5927179B2 (ja) | 2010-04-30 | 2011-04-27 | 積層された蛍光体層を有するledのウエハー |
Country Status (7)
Country | Link |
---|---|
US (1) | US8232117B2 (ja) |
EP (1) | EP2564435B1 (ja) |
JP (1) | JP5927179B2 (ja) |
KR (1) | KR101813099B1 (ja) |
CN (1) | CN102906887B (ja) |
TW (1) | TWI538245B (ja) |
WO (1) | WO2011135528A1 (ja) |
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2010
- 2010-04-30 US US12/771,809 patent/US8232117B2/en active Active
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- 2011-04-22 TW TW100114123A patent/TWI538245B/zh active
- 2011-04-27 EP EP11722561.5A patent/EP2564435B1/en active Active
- 2011-04-27 CN CN201180021821.8A patent/CN102906887B/zh active Active
- 2011-04-27 WO PCT/IB2011/051849 patent/WO2011135528A1/en active Application Filing
- 2011-04-27 KR KR1020127031301A patent/KR101813099B1/ko active IP Right Grant
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US8232117B2 (en) | 2012-07-31 |
TWI538245B (zh) | 2016-06-11 |
EP2564435A1 (en) | 2013-03-06 |
CN102906887A (zh) | 2013-01-30 |
US20110266569A1 (en) | 2011-11-03 |
KR101813099B1 (ko) | 2017-12-29 |
EP2564435B1 (en) | 2017-09-27 |
JP2013526052A (ja) | 2013-06-20 |
TW201203596A (en) | 2012-01-16 |
WO2011135528A1 (en) | 2011-11-03 |
KR20130095190A (ko) | 2013-08-27 |
CN102906887B (zh) | 2016-05-11 |
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