TWI536012B - 暗場檢驗系統及其之提供方法 - Google Patents
暗場檢驗系統及其之提供方法 Download PDFInfo
- Publication number
- TWI536012B TWI536012B TW099124187A TW99124187A TWI536012B TW I536012 B TWI536012 B TW I536012B TW 099124187 A TW099124187 A TW 099124187A TW 99124187 A TW99124187 A TW 99124187A TW I536012 B TWI536012 B TW I536012B
- Authority
- TW
- Taiwan
- Prior art keywords
- inspection system
- beam shaping
- light
- illumination
- dark field
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 19
- 238000005286 illumination Methods 0.000 claims description 103
- 238000007493 shaping process Methods 0.000 claims description 52
- 238000003384 imaging method Methods 0.000 claims description 50
- 239000000835 fiber Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 6
- 230000004075 alteration Effects 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 230000001427 coherent effect Effects 0.000 claims description 3
- 238000010191 image analysis Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 59
- 230000007547 defect Effects 0.000 description 18
- 238000001514 detection method Methods 0.000 description 13
- 238000012935 Averaging Methods 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22771309P | 2009-07-22 | 2009-07-22 | |
| PCT/US2010/042354 WO2011011291A1 (en) | 2009-07-22 | 2010-07-16 | Dark field inspection system with ring illumination |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201132960A TW201132960A (en) | 2011-10-01 |
| TWI536012B true TWI536012B (zh) | 2016-06-01 |
Family
ID=43499363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099124187A TWI536012B (zh) | 2009-07-22 | 2010-07-22 | 暗場檢驗系統及其之提供方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9176072B2 (enExample) |
| EP (1) | EP2457251A4 (enExample) |
| JP (2) | JP5639169B2 (enExample) |
| KR (1) | KR101803109B1 (enExample) |
| CN (1) | CN102473663B (enExample) |
| IL (1) | IL217178A (enExample) |
| TW (1) | TWI536012B (enExample) |
| WO (1) | WO2011011291A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI860476B (zh) * | 2020-05-15 | 2024-11-01 | 美商科磊股份有限公司 | 用於旋轉一光學物鏡之設備及方法 |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012048186A2 (en) * | 2010-10-08 | 2012-04-12 | Dark Field Technologies, Inc. | Retro-reflective imaging |
| US8885148B2 (en) | 2011-01-04 | 2014-11-11 | Asml Holding N.V. | System and method for design of linear motor for vacuum environment |
| US9267891B2 (en) * | 2011-06-06 | 2016-02-23 | The Regents Of The University Of California | Multiplex fluorescent particle detection using spatially distributed excitation |
| US8995746B2 (en) * | 2013-03-15 | 2015-03-31 | KLA—Tencor Corporation | Image synchronization of scanning wafer inspection system |
| CN103245671B (zh) * | 2013-05-09 | 2016-04-13 | 深圳先进技术研究院 | 冲压件表面缺陷检测装置及方法 |
| US9747670B2 (en) | 2013-06-26 | 2017-08-29 | Kla-Tencor Corporation | Method and system for improving wafer surface inspection sensitivity |
| US9182351B2 (en) | 2013-11-26 | 2015-11-10 | Nanometrics Incorporated | Optical metrology system for spectral imaging of a sample |
| US9846122B2 (en) | 2013-11-26 | 2017-12-19 | Nanometrics Incorporated | Optical metrology system for spectral imaging of a sample |
| KR102241978B1 (ko) | 2014-09-11 | 2021-04-19 | 삼성전자주식회사 | 피검체의 표면 검사 방법 및 이를 수행하기 위한 광학 시스템 |
| US9891177B2 (en) * | 2014-10-03 | 2018-02-13 | Kla-Tencor Corporation | TDI sensor in a darkfield system |
| US9395309B2 (en) | 2014-10-15 | 2016-07-19 | Exnodes Inc. | Multiple angle computational wafer inspection |
| CN104407453A (zh) * | 2014-12-17 | 2015-03-11 | 中国电子科技集团公司第三十八研究所 | 一种光控型可调太赫兹波衰减器及其使用方法 |
| JP6522384B2 (ja) * | 2015-03-23 | 2019-05-29 | 三菱重工業株式会社 | レーザレーダ装置及び走行体 |
| US9989480B2 (en) * | 2015-04-21 | 2018-06-05 | Camtek Ltd. | Inspection system having an expanded angular coverage |
| US10192716B2 (en) * | 2015-09-21 | 2019-01-29 | Kla-Tencor Corporation | Multi-beam dark field imaging |
| JP2017198612A (ja) * | 2016-04-28 | 2017-11-02 | キヤノン株式会社 | 検査装置、検査システム、および物品製造方法 |
| US10739275B2 (en) * | 2016-09-15 | 2020-08-11 | Kla-Tencor Corporation | Simultaneous multi-directional laser wafer inspection |
| US20200011795A1 (en) | 2017-02-28 | 2020-01-09 | The Regents Of The University Of California | Optofluidic analyte detection systems using multi-mode interference waveguides |
| WO2018191491A1 (en) | 2017-04-12 | 2018-10-18 | Sense Photonics, Inc. | Emitter structures for ultra-small vertical cavity surface emitting lasers (vcsels) and arrays incorporating the same |
| US11237872B2 (en) | 2017-05-23 | 2022-02-01 | Kla-Tencor Corporation | Semiconductor inspection and metrology systems for distributing job among the CPUs or GPUs based on logical image processing boundaries |
| KR102459880B1 (ko) * | 2017-09-29 | 2022-10-27 | 에이에스엠엘 네델란즈 비.브이. | 웨이퍼 검사를 위한 고급 전하 컨트롤러에 대한 방법 및 장치 |
| KR101969232B1 (ko) * | 2017-10-31 | 2019-04-17 | 주식회사 이노비즈 | 측면 비전 장치 |
| CN107727668B (zh) * | 2017-11-03 | 2023-11-14 | 浙江科技学院 | 基于偏振消光的透明介质单面选择成像方法及其装置 |
| CN109973858B (zh) * | 2017-12-28 | 2022-03-08 | 中国科学院深圳先进技术研究院 | 一种用于水下暗场成像的照明器 |
| US20190227002A1 (en) * | 2018-01-24 | 2019-07-25 | Corning Incorporated | Apparatus and methods for inspecting damage intensity |
| US20190355110A1 (en) * | 2018-05-15 | 2019-11-21 | Camtek Ltd. | Cross talk reduction |
| EP3611569A1 (en) * | 2018-08-16 | 2020-02-19 | ASML Netherlands B.V. | Metrology apparatus and photonic crystal fiber |
| US10942135B2 (en) * | 2018-11-14 | 2021-03-09 | Kla Corporation | Radial polarizer for particle detection |
| WO2020170389A1 (ja) * | 2019-02-21 | 2020-08-27 | 株式会社エフケー光学研究所 | 異物検査装置及び異物検査方法 |
| DE102019125127A1 (de) * | 2019-09-18 | 2021-03-18 | Mühlbauer Gmbh & Co. Kg | Bauteilhandhabung, Bauteilinspektion |
| CN112697794A (zh) * | 2019-10-23 | 2021-04-23 | 上海微电子装备(集团)股份有限公司 | 一种掩模版检测装置、光刻设备及掩模版检测方法 |
| US11397153B2 (en) * | 2019-12-03 | 2022-07-26 | Kla Corporation | Apparatus and method for gray field imaging |
| CN112098421B (zh) * | 2020-09-15 | 2022-06-28 | 上海微电子装备(集团)股份有限公司 | 暗场检测装置 |
| CN112179909B (zh) * | 2020-10-19 | 2024-09-20 | 中国工程物理研究院激光聚变研究中心 | 微型大视场超分辨显微成像装置 |
| WO2022176208A1 (ja) | 2021-02-22 | 2022-08-25 | 株式会社 ジャパンセル | 所定光生成方法、所定光利用方法、所定光を利用したサービス提供方法、測定/イメージング方法、光学特性変換素子、光源部、計測部、測定装置、所定光利用装置およびサービス提供システム |
| KR102864165B1 (ko) | 2021-10-20 | 2025-09-24 | 주식회사 엘지에너지솔루션 | 원통형 전지 측면 검사 장치 |
| US20240104777A1 (en) * | 2022-09-23 | 2024-03-28 | Apple Inc. | Camera-alignment-based fault detection for physical components |
| CN117589790B (zh) * | 2023-11-30 | 2024-07-23 | 魅杰光电科技(上海)有限公司 | 暗场照明装置及暗场照明的光学检测系统 |
| CN117538333A (zh) * | 2023-12-26 | 2024-02-09 | 苏州矽行半导体技术有限公司 | 镜头阵列和晶圆检测设备 |
| WO2025187232A1 (ja) * | 2024-03-04 | 2025-09-12 | パナソニックIpマネジメント株式会社 | レンズ、光学システム、撮像装置及び検査装置 |
| KR102874969B1 (ko) * | 2025-06-24 | 2025-10-23 | 주식회사 블루타일랩 | 워피지 검사를 위한 빔 패턴 분석 장치 및 이를 포함하는 웨이퍼 검사 장치 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5630630A (en) * | 1979-08-23 | 1981-03-27 | Hitachi Ltd | Foreign matter detector |
| JPS61104243A (ja) | 1984-10-29 | 1986-05-22 | Hitachi Ltd | 異物検出方法及びその装置 |
| US4740079A (en) | 1984-10-29 | 1988-04-26 | Hitachi, Ltd. | Method of and apparatus for detecting foreign substances |
| JPH02175090A (ja) * | 1988-12-27 | 1990-07-06 | Isamu Miyamoto | レーザビーム成形装置 |
| JPH0432067A (ja) | 1990-05-28 | 1992-02-04 | Mitsubishi Electric Corp | 磁気記録再生装置 |
| JPH0432067U (enExample) * | 1990-07-12 | 1992-03-16 | ||
| JPH0682376A (ja) * | 1992-09-03 | 1994-03-22 | Toshiba Corp | 表面検査装置 |
| JP3593375B2 (ja) * | 1995-02-07 | 2004-11-24 | 株式会社日立製作所 | 微小欠陥検出方法及びその装置 |
| WO1996039619A1 (en) * | 1995-06-06 | 1996-12-12 | Kla Instruments Corporation | Optical inspection of a specimen using multi-channel responses from the specimen |
| US5717518A (en) * | 1996-07-22 | 1998-02-10 | Kla Instruments Corporation | Broad spectrum ultraviolet catadioptric imaging system |
| US6064517A (en) * | 1996-07-22 | 2000-05-16 | Kla-Tencor Corporation | High NA system for multiple mode imaging |
| US5953130A (en) * | 1997-01-06 | 1999-09-14 | Cognex Corporation | Machine vision methods and apparatus for machine vision illumination of an object |
| US6366690B1 (en) * | 1998-07-07 | 2002-04-02 | Applied Materials, Inc. | Pixel based machine for patterned wafers |
| US7136159B2 (en) * | 2000-09-12 | 2006-11-14 | Kla-Tencor Technologies Corporation | Excimer laser inspection system |
| US6538730B2 (en) * | 2001-04-06 | 2003-03-25 | Kla-Tencor Technologies Corporation | Defect detection system |
| WO2003021853A2 (en) * | 2001-09-05 | 2003-03-13 | Genicon Sciences Corporation | Apparatus for reading signals generated from resonance light scattered particle labels |
| US6532064B1 (en) * | 2001-10-16 | 2003-03-11 | Baader-Canpolar Inc. | Automatic inspection apparatus and method for simultaneous detection of anomalies in a 3-dimensional translucent object |
| US7046353B2 (en) * | 2001-12-04 | 2006-05-16 | Kabushiki Kaisha Topcon | Surface inspection system |
| US7088443B2 (en) * | 2002-02-11 | 2006-08-08 | Kla-Tencor Technologies Corporation | System for detecting anomalies and/or features of a surface |
| US7106432B1 (en) * | 2002-09-27 | 2006-09-12 | Kla-Tencor Technologies Corporation | Surface inspection system and method for using photo detector array to detect defects in inspection surface |
| AU2003263109A1 (en) | 2002-09-30 | 2004-04-23 | Applied Materials Israel, Ltd. | Dark field inspection system |
| US20040156539A1 (en) * | 2003-02-10 | 2004-08-12 | Asm Assembly Automation Ltd | Inspecting an array of electronic components |
| US7227984B2 (en) * | 2003-03-03 | 2007-06-05 | Kla-Tencor Technologies Corporation | Method and apparatus for identifying defects in a substrate surface by using dithering to reconstruct under-sampled images |
| US7365834B2 (en) * | 2003-06-24 | 2008-04-29 | Kla-Tencor Technologies Corporation | Optical system for detecting anomalies and/or features of surfaces |
| US7433031B2 (en) * | 2003-10-29 | 2008-10-07 | Core Tech Optical, Inc. | Defect review system with 2D scanning and a ring detector |
| US7319229B2 (en) | 2003-12-29 | 2008-01-15 | Kla-Tencor Technologies Corporation | Illumination apparatus and methods |
| DE102004004761A1 (de) * | 2004-01-30 | 2005-09-08 | Leica Microsystems Semiconductor Gmbh | Vorrichtung und Verfahren zur Inspektion eines Wafers |
| JP4751617B2 (ja) | 2005-01-21 | 2011-08-17 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| KR100663365B1 (ko) * | 2005-07-18 | 2007-01-02 | 삼성전자주식회사 | 내부에 적어도 한 쌍의 빔 경로들을 갖는 렌즈 유니트를구비하는 광학적 검사장비들 및 이를 사용하여 기판의 표면결함들을 검출하는 방법들 |
| JP4996856B2 (ja) * | 2006-01-23 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置およびその方法 |
| JP4908925B2 (ja) * | 2006-02-08 | 2012-04-04 | 株式会社日立ハイテクノロジーズ | ウェハ表面欠陥検査装置およびその方法 |
| JP4988224B2 (ja) * | 2006-03-01 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| JP2008002932A (ja) * | 2006-06-22 | 2008-01-10 | Tokyo Seimitsu Co Ltd | 試料撮像装置及び試料の照明方法 |
| JP2008046075A (ja) * | 2006-08-21 | 2008-02-28 | Omron Corp | 光学系、薄膜評価装置および薄膜評価方法 |
| US20080297786A1 (en) * | 2007-05-31 | 2008-12-04 | Hitachi High-Technologies Corporation | Inspecting device and inspecting method |
| US7986412B2 (en) * | 2008-06-03 | 2011-07-26 | Jzw Llc | Interferometric defect detection and classification |
| DE102009000528B4 (de) * | 2009-01-30 | 2011-04-07 | Nanophotonics Ag | Inspektionsvorrichtung und -verfahren für die optische Untersuchung von Objektoberflächen, insbesondere von Waferoberflächen |
-
2010
- 2010-07-16 WO PCT/US2010/042354 patent/WO2011011291A1/en not_active Ceased
- 2010-07-16 KR KR1020127004139A patent/KR101803109B1/ko active Active
- 2010-07-16 CN CN201080033782.9A patent/CN102473663B/zh active Active
- 2010-07-16 EP EP10802700.4A patent/EP2457251A4/en not_active Withdrawn
- 2010-07-16 JP JP2012521696A patent/JP5639169B2/ja active Active
- 2010-07-16 US US12/919,760 patent/US9176072B2/en active Active
- 2010-07-22 TW TW099124187A patent/TWI536012B/zh active
-
2011
- 2011-12-25 IL IL217178A patent/IL217178A/en active IP Right Grant
-
2014
- 2014-07-07 JP JP2014140065A patent/JP6072733B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI860476B (zh) * | 2020-05-15 | 2024-11-01 | 美商科磊股份有限公司 | 用於旋轉一光學物鏡之設備及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102473663A (zh) | 2012-05-23 |
| JP6072733B2 (ja) | 2017-02-01 |
| US20110169944A1 (en) | 2011-07-14 |
| EP2457251A4 (en) | 2017-11-08 |
| WO2011011291A1 (en) | 2011-01-27 |
| US9176072B2 (en) | 2015-11-03 |
| KR101803109B1 (ko) | 2017-11-29 |
| KR20120052994A (ko) | 2012-05-24 |
| TW201132960A (en) | 2011-10-01 |
| IL217178A (en) | 2017-04-30 |
| IL217178A0 (en) | 2012-02-29 |
| JP5639169B2 (ja) | 2014-12-10 |
| EP2457251A1 (en) | 2012-05-30 |
| CN102473663B (zh) | 2016-11-09 |
| JP2014222239A (ja) | 2014-11-27 |
| JP2012533756A (ja) | 2012-12-27 |
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