TWI535569B - Organic semiconductor components - Google Patents

Organic semiconductor components Download PDF

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Publication number
TWI535569B
TWI535569B TW104113969A TW104113969A TWI535569B TW I535569 B TWI535569 B TW I535569B TW 104113969 A TW104113969 A TW 104113969A TW 104113969 A TW104113969 A TW 104113969A TW I535569 B TWI535569 B TW I535569B
Authority
TW
Taiwan
Prior art keywords
group
organic
formula
compound
acid
Prior art date
Application number
TW104113969A
Other languages
English (en)
Chinese (zh)
Other versions
TW201601932A (zh
Inventor
Junichi Takeya
Junji Iwasa
Kazuhisa Kumazawa
Original Assignee
Nippon Soda Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Soda Co filed Critical Nippon Soda Co
Publication of TW201601932A publication Critical patent/TW201601932A/zh
Application granted granted Critical
Publication of TWI535569B publication Critical patent/TWI535569B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Polymers (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
TW104113969A 2014-05-09 2015-04-30 Organic semiconductor components TWI535569B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014097826 2014-05-09

Publications (2)

Publication Number Publication Date
TW201601932A TW201601932A (zh) 2016-01-16
TWI535569B true TWI535569B (zh) 2016-06-01

Family

ID=54392318

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104113969A TWI535569B (zh) 2014-05-09 2015-04-30 Organic semiconductor components

Country Status (5)

Country Link
JP (1) JP6289617B2 (ko)
KR (1) KR101920133B1 (ko)
CN (1) CN106463408B (ko)
TW (1) TWI535569B (ko)
WO (1) WO2015170458A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6916731B2 (ja) * 2017-12-28 2021-08-11 東京応化工業株式会社 基板の撥水化方法、表面処理剤、及び基板表面を洗浄液により洗浄する際の有機パターン又は無機パターンの倒れを抑制する方法
CN108715710A (zh) * 2018-05-07 2018-10-30 天津大学 一种喷墨打印墨水及其制备方法
JP7485497B2 (ja) * 2019-02-14 2024-05-16 ダウ・東レ株式会社 オルガノポリシロキサン硬化物フィルム、その用途、製造方法および製造装置
CN113583507A (zh) * 2021-06-29 2021-11-02 成都灵睿奥创科技有限公司 一种有机半导体墨水、制备方法及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200365A (ja) 2002-12-18 2004-07-15 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子
JP4807159B2 (ja) * 2006-04-12 2011-11-02 凸版印刷株式会社 絶縁塗料、これから形成された有機絶縁膜、その形成方法および有機トランジスタ
KR101258294B1 (ko) * 2006-11-13 2013-04-25 삼성전자주식회사 가교성 유기 절연체 형성용 조성물 및 이를 이용하여제조된 유기 절연체
US9048445B2 (en) * 2008-03-18 2015-06-02 Toray Industries, Inc. Gate insulating material, gate insulating film and organic field-effect transistor
JP5262974B2 (ja) * 2009-05-12 2013-08-14 凸版印刷株式会社 絶縁性薄膜、絶縁性薄膜の形成用溶液、絶縁性薄膜の製造方法、電界効果型トランジスタ及びその製造方法並びに画像表示装置
AU2011270548B2 (en) * 2010-06-23 2013-12-05 Nippon Soda Co., Ltd. Process for production of replica mold for imprinting use
KR20170102373A (ko) * 2012-07-10 2017-09-08 닛뽕소다 가부시키가이샤 유기 무기 복합체 및 그 형성용 조성물

Also Published As

Publication number Publication date
WO2015170458A1 (ja) 2015-11-12
JP6289617B2 (ja) 2018-03-07
KR101920133B1 (ko) 2018-11-19
TW201601932A (zh) 2016-01-16
KR20160138559A (ko) 2016-12-05
JPWO2015170458A1 (ja) 2017-04-20
CN106463408A (zh) 2017-02-22
CN106463408B (zh) 2019-09-03

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