TWI527929B - 具有滾軋成型表面之基座和其製造方法 - Google Patents
具有滾軋成型表面之基座和其製造方法 Download PDFInfo
- Publication number
- TWI527929B TWI527929B TW098109276A TW98109276A TWI527929B TW I527929 B TWI527929 B TW I527929B TW 098109276 A TW098109276 A TW 098109276A TW 98109276 A TW98109276 A TW 98109276A TW I527929 B TWI527929 B TW I527929B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate support
- top surface
- substrate
- embossing
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims description 132
- 238000004049 embossing Methods 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 238000007788 roughening Methods 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims 3
- 230000000630 rising effect Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 description 28
- 238000009826 distribution Methods 0.000 description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 239000003351 stiffener Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000036961 partial effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910000755 6061-T6 aluminium alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- -1 sputtering Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3805008P | 2008-03-20 | 2008-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200951244A TW200951244A (en) | 2009-12-16 |
| TWI527929B true TWI527929B (zh) | 2016-04-01 |
Family
ID=41089127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098109276A TWI527929B (zh) | 2008-03-20 | 2009-03-20 | 具有滾軋成型表面之基座和其製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9243328B2 (enExample) |
| JP (1) | JP5745394B2 (enExample) |
| KR (1) | KR101588566B1 (enExample) |
| CN (1) | CN101978473B (enExample) |
| TW (1) | TWI527929B (enExample) |
| WO (1) | WO2009117514A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| GB201709446D0 (en) * | 2017-06-14 | 2017-07-26 | Semblant Ltd | Plasma processing apparatus |
| CN109881184B (zh) * | 2019-03-29 | 2022-03-25 | 拓荆科技股份有限公司 | 具有静电力抑制的基板承载装置 |
| CN112387798B (zh) * | 2019-08-13 | 2024-05-14 | 青岛海尔多媒体有限公司 | 用于制作电子设备外壳的方法及系统 |
| KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6431501A (en) * | 1987-07-24 | 1989-02-01 | Kawasaki Steel Co | Production of steel sheet for shadow mask |
| US5531835A (en) * | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
| US6089182A (en) * | 1995-08-17 | 2000-07-18 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2901536B2 (ja) * | 1996-02-28 | 1999-06-07 | 山形日本電気株式会社 | サセプタ |
| KR100203780B1 (ko) * | 1996-09-23 | 1999-06-15 | 윤종용 | 반도체 웨이퍼 열처리 장치 |
| JP3160229B2 (ja) * | 1997-06-06 | 2001-04-25 | 日本エー・エス・エム株式会社 | プラズマｃｖｄ装置用サセプタ及びその製造方法 |
| JP2002113536A (ja) * | 2000-10-04 | 2002-04-16 | Toyota Motor Corp | 成形素材の成形性向上方法およびその装置 |
| US6634882B2 (en) * | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
| KR100375984B1 (ko) * | 2001-03-06 | 2003-03-15 | 삼성전자주식회사 | 플레이트 어셈블리 및 이를 갖는 가공 장치 |
| JP2004154814A (ja) * | 2002-11-06 | 2004-06-03 | Shooei Shoji:Kk | 加工金属板材料 |
| KR100758965B1 (ko) * | 2003-04-02 | 2007-09-14 | 가부시키가이샤 사무코 | 반도체 웨이퍼용 열처리 치구 |
| JP2004321848A (ja) * | 2003-04-21 | 2004-11-18 | Ngk Insulators Ltd | ハニカム構造体及びその製造方法 |
| US20040221959A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Anodized substrate support |
| US8372205B2 (en) * | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
| JP2004342834A (ja) * | 2003-05-15 | 2004-12-02 | Seiko Epson Corp | 基板載置トレイ |
| JP2006019572A (ja) * | 2004-07-02 | 2006-01-19 | Ricoh Co Ltd | 半導体製造装置及び半導体製造方法 |
| JP2006173259A (ja) * | 2004-12-14 | 2006-06-29 | Ricoh Co Ltd | サセプター及びその製造方法及び半導体製造装置 |
| KR100750968B1 (ko) * | 2005-06-07 | 2007-08-22 | 주식회사 알지비하이텍 | 플라즈마화학적기상증착 기구 내의 서셉터 구조 |
| US7691205B2 (en) * | 2005-10-18 | 2010-04-06 | Asm Japan K.K. | Substrate-supporting device |
| KR100755874B1 (ko) * | 2005-11-30 | 2007-09-05 | 주식회사 아이피에스 | 진공처리장치의 정전척, 그를 가지는 진공처리장치 및정전척의 제조방법 |
| JP5122741B2 (ja) * | 2005-12-01 | 2013-01-16 | パナソニック株式会社 | システムキッチン用シンク又はカウンター |
| JP2007168245A (ja) * | 2005-12-21 | 2007-07-05 | Fujifilm Corp | 感光性シート及びその製造方法と装置 |
| KR200412959Y1 (ko) * | 2006-01-24 | 2006-04-05 | (주)포인트엔지니어링 | 반도체 및 액정표시장치의 투명유리기판 제조용 플레이트 |
| US8173228B2 (en) * | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
| JP4597894B2 (ja) * | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
| US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
-
2009
- 2009-03-18 CN CN200980109686.5A patent/CN101978473B/zh not_active Expired - Fee Related
- 2009-03-18 JP JP2011500934A patent/JP5745394B2/ja not_active Expired - Fee Related
- 2009-03-18 KR KR1020107023428A patent/KR101588566B1/ko not_active Expired - Fee Related
- 2009-03-18 WO PCT/US2009/037557 patent/WO2009117514A1/en not_active Ceased
- 2009-03-19 US US12/407,766 patent/US9243328B2/en not_active Expired - Fee Related
- 2009-03-20 TW TW098109276A patent/TWI527929B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011515854A (ja) | 2011-05-19 |
| TW200951244A (en) | 2009-12-16 |
| KR101588566B1 (ko) | 2016-01-26 |
| CN101978473B (zh) | 2015-11-25 |
| US20090238734A1 (en) | 2009-09-24 |
| KR20100126533A (ko) | 2010-12-01 |
| JP5745394B2 (ja) | 2015-07-08 |
| WO2009117514A1 (en) | 2009-09-24 |
| CN101978473A (zh) | 2011-02-16 |
| US9243328B2 (en) | 2016-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |