CN101978473B - 具有滚轧成型表面的基座和制造所述基座的方法 - Google Patents

具有滚轧成型表面的基座和制造所述基座的方法 Download PDF

Info

Publication number
CN101978473B
CN101978473B CN200980109686.5A CN200980109686A CN101978473B CN 101978473 B CN101978473 B CN 101978473B CN 200980109686 A CN200980109686 A CN 200980109686A CN 101978473 B CN101978473 B CN 101978473B
Authority
CN
China
Prior art keywords
top surface
roll
substrate support
substrate
mils
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980109686.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN101978473A (zh
Inventor
古田学
戴维·阿奇利
崔寿永
约翰·M·怀特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101978473A publication Critical patent/CN101978473A/zh
Application granted granted Critical
Publication of CN101978473B publication Critical patent/CN101978473B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
CN200980109686.5A 2008-03-20 2009-03-18 具有滚轧成型表面的基座和制造所述基座的方法 Expired - Fee Related CN101978473B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3805008P 2008-03-20 2008-03-20
US61/038,050 2008-03-20
PCT/US2009/037557 WO2009117514A1 (en) 2008-03-20 2009-03-18 Susceptor with roll-formed surface and method for making same

Publications (2)

Publication Number Publication Date
CN101978473A CN101978473A (zh) 2011-02-16
CN101978473B true CN101978473B (zh) 2015-11-25

Family

ID=41089127

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980109686.5A Expired - Fee Related CN101978473B (zh) 2008-03-20 2009-03-18 具有滚轧成型表面的基座和制造所述基座的方法

Country Status (6)

Country Link
US (1) US9243328B2 (enExample)
JP (1) JP5745394B2 (enExample)
KR (1) KR101588566B1 (enExample)
CN (1) CN101978473B (enExample)
TW (1) TWI527929B (enExample)
WO (1) WO2009117514A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
GB201709446D0 (en) * 2017-06-14 2017-07-26 Semblant Ltd Plasma processing apparatus
CN109881184B (zh) * 2019-03-29 2022-03-25 拓荆科技股份有限公司 具有静电力抑制的基板承载装置
CN112387798B (zh) * 2019-08-13 2024-05-14 青岛海尔多媒体有限公司 用于制作电子设备外壳的方法及系统
KR20210089079A (ko) * 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6634882B2 (en) * 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
CN1771588A (zh) * 2003-04-02 2006-05-10 株式会社上睦可 半导体晶片用热处理夹具

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431501A (en) * 1987-07-24 1989-02-01 Kawasaki Steel Co Production of steel sheet for shadow mask
US5531835A (en) * 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US6089182A (en) * 1995-08-17 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
JP2901536B2 (ja) * 1996-02-28 1999-06-07 山形日本電気株式会社 サセプタ
KR100203780B1 (ko) * 1996-09-23 1999-06-15 윤종용 반도체 웨이퍼 열처리 장치
JP3160229B2 (ja) * 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
JP2002113536A (ja) * 2000-10-04 2002-04-16 Toyota Motor Corp 成形素材の成形性向上方法およびその装置
KR100375984B1 (ko) 2001-03-06 2003-03-15 삼성전자주식회사 플레이트 어셈블리 및 이를 갖는 가공 장치
JP2004154814A (ja) * 2002-11-06 2004-06-03 Shooei Shoji:Kk 加工金属板材料
JP2004321848A (ja) * 2003-04-21 2004-11-18 Ngk Insulators Ltd ハニカム構造体及びその製造方法
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US8372205B2 (en) 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
JP2004342834A (ja) * 2003-05-15 2004-12-02 Seiko Epson Corp 基板載置トレイ
JP2006019572A (ja) * 2004-07-02 2006-01-19 Ricoh Co Ltd 半導体製造装置及び半導体製造方法
JP2006173259A (ja) * 2004-12-14 2006-06-29 Ricoh Co Ltd サセプター及びその製造方法及び半導体製造装置
KR100750968B1 (ko) * 2005-06-07 2007-08-22 주식회사 알지비하이텍 플라즈마화학적기상증착 기구 내의 서셉터 구조
US7691205B2 (en) * 2005-10-18 2010-04-06 Asm Japan K.K. Substrate-supporting device
KR100755874B1 (ko) * 2005-11-30 2007-09-05 주식회사 아이피에스 진공처리장치의 정전척, 그를 가지는 진공처리장치 및정전척의 제조방법
JP5122741B2 (ja) * 2005-12-01 2013-01-16 パナソニック株式会社 システムキッチン用シンク又はカウンター
JP2007168245A (ja) * 2005-12-21 2007-07-05 Fujifilm Corp 感光性シート及びその製造方法と装置
KR200412959Y1 (ko) * 2006-01-24 2006-04-05 (주)포인트엔지니어링 반도체 및 액정표시장치의 투명유리기판 제조용 플레이트
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
JP4597894B2 (ja) * 2006-03-31 2010-12-15 東京エレクトロン株式会社 基板載置台および基板処理装置
US20080131622A1 (en) 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6634882B2 (en) * 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
CN1771588A (zh) * 2003-04-02 2006-05-10 株式会社上睦可 半导体晶片用热处理夹具

Also Published As

Publication number Publication date
US20090238734A1 (en) 2009-09-24
JP2011515854A (ja) 2011-05-19
WO2009117514A1 (en) 2009-09-24
TW200951244A (en) 2009-12-16
KR101588566B1 (ko) 2016-01-26
JP5745394B2 (ja) 2015-07-08
US9243328B2 (en) 2016-01-26
KR20100126533A (ko) 2010-12-01
CN101978473A (zh) 2011-02-16
TWI527929B (zh) 2016-04-01

Similar Documents

Publication Publication Date Title
CN101191203B (zh) 等离子体反应器基板安装表面纹理化
CN100385640C (zh) 阳极化衬底支撑件
US20060032586A1 (en) Reducing electrostatic charge by roughening the susceptor
CN101978473B (zh) 具有滚轧成型表面的基座和制造所述基座的方法
JP2005051200A5 (enExample)
CN100505206C (zh) 用于真空处理装置的静电吸盘、具有该静电吸盘的真空处理装置、及其制造方法
JP6010296B2 (ja) 静電チャック
KR101441858B1 (ko) 서셉터를 러프닝함으로써 정전하를 감소시키는 장치
TWI695902B (zh) 基板支撐組件、具有其之處理腔室以及處理基板的方法
KR101111042B1 (ko) 기판 지지부의 가열 및 냉각 방법
KR101239694B1 (ko) 가장자리의 처짐 현상을 개선한 기판안치대
CN118299244A (zh) 静电保持盘、基板处理装置以及静电保持盘的制造方法
CN118299243A (zh) 静电保持盘、基板处理装置以及静电保持盘的制造方法
CN115213808A (zh) 基板载置台的研磨方法和基板处理装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: California, USA

Applicant after: APPLIED MATERIALS, Inc.

Address before: California, USA

Applicant before: APPLIED MATERIALS, Inc.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151125

CF01 Termination of patent right due to non-payment of annual fee