TWI516582B - 混合的磨料拋光組合物 - Google Patents
混合的磨料拋光組合物 Download PDFInfo
- Publication number
- TWI516582B TWI516582B TW103135182A TW103135182A TWI516582B TW I516582 B TWI516582 B TW I516582B TW 103135182 A TW103135182 A TW 103135182A TW 103135182 A TW103135182 A TW 103135182A TW I516582 B TWI516582 B TW I516582B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing composition
- abrasive particles
- particles
- particle size
- concentration
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/051,121 US9340706B2 (en) | 2013-10-10 | 2013-10-10 | Mixed abrasive polishing compositions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201518492A TW201518492A (zh) | 2015-05-16 |
| TWI516582B true TWI516582B (zh) | 2016-01-11 |
Family
ID=52808764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103135182A TWI516582B (zh) | 2013-10-10 | 2014-10-09 | 混合的磨料拋光組合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9340706B2 (https=) |
| EP (2) | EP3055376B1 (https=) |
| JP (1) | JP6542761B2 (https=) |
| KR (1) | KR102289577B1 (https=) |
| CN (1) | CN105814163B (https=) |
| TW (1) | TWI516582B (https=) |
| WO (1) | WO2015053985A1 (https=) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| CN107075310B (zh) * | 2014-10-21 | 2019-04-02 | 嘉柏微电子材料股份公司 | 钴凹陷控制剂 |
| JP6879995B2 (ja) * | 2015-07-13 | 2021-06-02 | シーエムシー マテリアルズ,インコーポレイティド | 誘電体基板を加工するための方法及び組成物 |
| US10128146B2 (en) | 2015-08-20 | 2018-11-13 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures |
| US20170066944A1 (en) * | 2015-09-03 | 2017-03-09 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
| CN109906257B (zh) * | 2016-10-17 | 2021-11-09 | Cmc材料股份有限公司 | 具有改善的凹陷及图案选择性的对氧化物及氮化物有选择性的化学机械抛光组合物 |
| US9783702B1 (en) | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
| WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| JP6708994B2 (ja) | 2017-03-27 | 2020-06-10 | 日立化成株式会社 | スラリ及び研磨方法 |
| JP7132942B2 (ja) * | 2017-04-17 | 2022-09-07 | シーエムシー マテリアルズ,インコーポレイティド | バルク酸化物の平坦化のための自己停止研磨組成物および方法 |
| CN109251675B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
| US10584265B2 (en) * | 2017-09-28 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them |
| KR102713915B1 (ko) * | 2017-12-22 | 2024-10-07 | 닛산 가가쿠 가부시키가이샤 | 레이저마크 주변의 융기를 해소하기 위한 연마용 조성물 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| WO2019181016A1 (ja) | 2018-03-22 | 2019-09-26 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| WO2020021680A1 (ja) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
| WO2019182061A1 (ja) * | 2018-03-22 | 2019-09-26 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| WO2020065723A1 (ja) | 2018-09-25 | 2020-04-02 | 日立化成株式会社 | スラリ及び研磨方法 |
| US10988635B2 (en) | 2018-12-04 | 2021-04-27 | Cmc Materials, Inc. | Composition and method for copper barrier CMP |
| KR102241941B1 (ko) | 2018-12-28 | 2021-04-20 | 주식회사 케이씨텍 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 그를 이용한 연마 방법 |
| US11326076B2 (en) | 2019-01-25 | 2022-05-10 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives |
| US20200303198A1 (en) * | 2019-03-22 | 2020-09-24 | Fujimi Incorporated | Polishing composition and polishing method |
| KR102453292B1 (ko) * | 2020-07-07 | 2022-10-12 | 주식회사 나노신소재 | 산화세륨 복합분말의 분산 조성물 |
| TWI880128B (zh) * | 2020-07-20 | 2025-04-11 | 美商Cmc材料有限責任公司 | 矽晶圓拋光組合物及方法 |
| CN117120563B (zh) * | 2020-12-21 | 2026-03-27 | Cmc材料有限责任公司 | 用于高形貌选择性的自停止性抛光组合物与方法 |
| CN114686108A (zh) * | 2020-12-30 | 2022-07-01 | 安集微电子(上海)有限公司 | 一种用于钨抛光的化学机械抛光液 |
| JP7697788B2 (ja) * | 2021-01-08 | 2025-06-24 | 株式会社フジミインコーポレーテッド | 二酸化ケイ素膜及び窒化ケイ素膜研磨用の研磨用組成物、二酸化ケイ素膜及び窒化ケイ素膜研磨用の研磨用組成物の製造方法、研磨方法 |
| JP7569717B2 (ja) * | 2021-03-09 | 2024-10-18 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| KR102396281B1 (ko) * | 2021-04-14 | 2022-05-10 | 성균관대학교산학협력단 | 연마용 조성물 및 이의 제조방법 |
| US20220332977A1 (en) * | 2021-04-16 | 2022-10-20 | Entegris, Inc. | Cmp compositions for polishing dielectric materials |
| KR102620964B1 (ko) * | 2021-07-08 | 2024-01-03 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법 |
| TWI907614B (zh) * | 2022-01-05 | 2025-12-11 | 南韓商納米新素材有限公司 | 氧化鈰複合粉末的分散組合物 |
| KR102759558B1 (ko) * | 2022-05-18 | 2025-02-03 | 주식회사 케이씨텍 | 실리콘 웨이퍼 연마용 슬러리 조성물 |
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| US8859428B2 (en) * | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
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-
2013
- 2013-10-10 US US14/051,121 patent/US9340706B2/en active Active
-
2014
- 2014-09-30 WO PCT/US2014/058268 patent/WO2015053985A1/en not_active Ceased
- 2014-09-30 EP EP14852315.2A patent/EP3055376B1/en active Active
- 2014-09-30 KR KR1020167011919A patent/KR102289577B1/ko active Active
- 2014-09-30 EP EP18208724.7A patent/EP3470487B1/en active Active
- 2014-09-30 CN CN201480067701.5A patent/CN105814163B/zh active Active
- 2014-09-30 JP JP2016521703A patent/JP6542761B2/ja active Active
- 2014-10-09 TW TW103135182A patent/TWI516582B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3470487B1 (en) | 2021-01-20 |
| JP6542761B2 (ja) | 2019-07-10 |
| EP3055376A1 (en) | 2016-08-17 |
| WO2015053985A1 (en) | 2015-04-16 |
| US9340706B2 (en) | 2016-05-17 |
| KR20160070094A (ko) | 2016-06-17 |
| US20150102012A1 (en) | 2015-04-16 |
| KR102289577B1 (ko) | 2021-08-13 |
| EP3055376A4 (en) | 2017-05-10 |
| EP3470487A1 (en) | 2019-04-17 |
| EP3055376B1 (en) | 2019-01-16 |
| TW201518492A (zh) | 2015-05-16 |
| CN105814163B (zh) | 2017-12-08 |
| CN105814163A (zh) | 2016-07-27 |
| JP2016538359A (ja) | 2016-12-08 |
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