TWI512794B - 藉由雷射能量輻射一半導體材料表面的方法與設備 - Google Patents
藉由雷射能量輻射一半導體材料表面的方法與設備 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 31
- 230000001678 irradiating effect Effects 0.000 title claims description 7
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 19
- 230000005855 radiation Effects 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 238000001994 activation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000003909 pattern recognition Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
本發明係關於一種藉由一雷射輻射一半導體材料表面的方法。本發明進一步係關於一種用於輻射一半導體材料表面的雷射設備。
熟知半導體材料表面之雷射輻射係用於諸多應用,諸如非晶矽之熱退火以獲得再結晶、及摻雜物活化。此項技術藉由實現一極快速熱處理及較淺之加熱區域深度而提供明顯優於習知加熱製程之優點。
用於半導體應用之習知雷射輻射製程的一般性問題是,由於熱製程所需要的高能量密度及傳統可用雷射源的低輸出能量而致使雷射點尺寸遠小於晶粒(亦稱為晶片或裝置)尺寸。因此,雷射點必須橫越或掃描晶粒以覆蓋整個晶粒,此導致若干缺點。
如Current及Borland(Technologies New Metrology for Annealing of USJ and Thin Films,16th IEEE International Conference on Advanced Thermal Processing of Semiconductors-RTP2008)所描述且如圖1及圖2所繪示,第一缺點在於:若雷射點(b)掃描或橫越晶粒(a),則連續雷射點將在晶粒之某些部分(c)重疊,此導致摻雜物活化速率或深度之不均勻性及表面品質之不均勻性。
另一缺點在於:若在相同表面區域上需要多個雷射脈衝,則雷射點以極高重疊性掃描或橫越該表面,以使經處理表面區域之各個點上的多個雷射脈衝平均化,此導致有限生產速率及週期不均勻性(所謂的莫爾圖案(moir-pattern))。
另一個一般性問題在於:用於不同應用類型之晶粒通常具有不同尺寸,且另外在一些應用中,僅需輻射晶粒之若干部分。熟練人員應熟知,為了能夠以有限重疊性處理不同晶粒尺寸或晶粒之若干部分,光束點係藉由各種不同尺寸之遮罩予以塑形。因此,由於每次需要另一尺寸時必須改變及調諧遮罩,故製造靈活性嚴重受限且停工時間可能相當長。
為試圖克服上述缺點,WO 01/61407(Hawryluk等人)描述一種使用一可變孔隙光闌來界定曝光場尺寸之雷射輻射設備。
然而,一明顯缺點在於:根據Hawryluk等人,獲得滿意均勻性所需之雷射光源需為具有多於1000個空間模式的一固態雷射,其並非當前可購得之雷射源。
設定光束點尺寸之另一實例係US 2006/0176920,其中Park等人描述一種包括強度圖案調節單元之雷射輻射設備,該等強度圖案調節單元具有一通孔、一半通孔及一阻斷區域以藉由調節一帶狀雷射光束之長度而可變地調節其強度。
考慮到上述雷射輻射製程之缺點,明顯需要根據本發明之雷射輻射方法及設備,其作為一第一目的可提供處理半導體材料層以在晶粒內及晶圓內獲得可接受均勻性,同時保持可接受之生產速率及製造靈活性的能力。
本發明可使重疊效應及衰減區域減少,此作為第二目的。
本發明可提供在材料層表面上產生具有靈活影像形狀之一光束的能力,此作為另一目的。
本發明可提供在較低溫度下輻射且使雷射能量最大化地轉換為熱的能力,此作為另一目的。
本發明藉由使雷射光束點尺寸可變地匹配於選定區域尺寸而滿足上述目的。
本發明係關於一種輻射半導體材料之方法,其包括:
- 選擇一半導體材料層表面之一區域,該區域具有一區域尺寸;利用具有一光束點尺寸之一準分子雷射來輻射該半導體材料層表面之該區域;
- 及調整該光束點尺寸;
該方法之特徵為調整該光束點尺寸包括使該光束點尺寸可變地匹配於該選定區域尺寸。
本發明進一步係關於一種用於輻射半導體材料之設備,其包括:
- 一準分子雷射,其係用於輻射一半導體材料層表面之一選定區域,該雷射具有一雷射光束點尺寸且該選定區域具有一區域尺寸;
- 及一用於調整該雷射光束點尺寸之構件;
該設備之特徵為該用於調整該雷射光束點尺寸之構件係經調適以使該雷射光束點尺寸可變地匹配於該選定區域尺寸。
熟習此項技術者應瞭解根據本發明下文所描述之實施例僅為闡釋性,而並非限制本發明之預期範疇。亦可考慮其他實施例。
根據本發明之一第一實施例,提供一種輻射半導體材料之方法,其包括:
- 選擇一半導體材料層表面之一區域,該區域具有一區域尺寸;
- 利用具有一光束點尺寸之一準分子雷射來輻射該半導體材料層表面之該區域;
- 及調整該光束點尺寸;
該方法之特徵為調整該光束點尺寸包括使該光束點尺寸可變地匹配於該選定區域尺寸。
藉由使該光束點尺寸可變地匹配於該選定區域尺寸,該方法可因減少重疊效應及衰減區域而在晶粒內及晶圓內提供可接受之均勻性。此外,該方法可藉由在該材料層表面上產生具有靈活形狀及尺寸之一光束點的能力而提供可接受之生產速率及製造靈活性。
半導體材料層可為適於半導體應用之任何材料,諸如(但不限於)未摻雜矽、摻雜矽、植入矽、結晶矽、非晶矽、矽鍺、氮化鍺、III-V化合物半導體(諸如氮化鎵、碳化矽)及類似物。
在根據本發明之一實施例中,可藉由改變其影像形成於材料層表面上之一可變孔隙的尺寸及形狀而匹配光束點尺寸。實際上,此孔隙為一孔或一開口,雷射光束從中穿過且該孔或該開口界定光束點在選定區域上之形狀及尺寸。藉由機械地改變此可變孔隙,可使光束點尺寸及/或形狀匹配於選定區域尺寸及/或形狀。如圖5所繪示,此可變孔隙可配備有其位置可經可變地調整之葉片。
視所需之光束點精確度而定,可能需要精細調整孔隙以校正不精確度並且使點尺寸與選定區域精確地匹配。可藉由使用一相機來視覺化材料層表面上之光束點,量測點尺寸及調整孔隙之開口尺寸及形狀來執行此精細調整。在一孔隙配備有葉片之情況下,可精細地調諧葉片位置以達到具有所期望精確度之目標點尺寸。
在根據本發明或與一可變孔隙組合之一替代性實施例中,可藉由具有可變影像放大倍數之一光學系統而匹配光束點尺寸。此光學系統經調適以利用可變放大倍數而在晶圓上產生孔隙之影像。
進一步根據本發明,該方法可包括相對於選定區域沿XYZ方向對準光束點。
在本發明之一較佳實施例中且如圖3所繪示,選定區域可為至少一整個晶粒。可藉由一雷射脈衝來處理該整個晶粒。此外,該晶粒可接收多個雷射脈衝,完全覆蓋整個晶粒。另外亦如圖3所繪示,選定區域可覆蓋多個晶粒。圖4顯示輻射一或多個整個晶粒可明顯有助於增加晶粒上之均勻輻射能量分佈(e),且有助於減少重疊效應(c),導致製程均勻性增加。
根據本發明之一方法可進一步包括在使光束點尺寸匹配於選定區域尺寸之前均勻化雷射光束。均勻化雷射光束將明顯有助於增加製程均勻性。
進一步根據本發明,提供一種用於輻射半導體材料之設備,其包括:
- 一準分子雷射,其係用於輻射一半導體層表面之一選定區域,該雷射具有一雷射光束點尺寸且該選定區域具有一區域尺寸;
- 及一用於調整該雷射光束點尺寸之構件;
該設備之特徵為該用於調整該雷射光束點尺寸之構件係經調適以使該雷射光束點尺寸可變地匹配於該選定區域尺寸。
該準分子雷射可為其波長、能量及脈衝持續時間經調適用於製程之任何準分子雷射,較佳為氯化氙準分子雷射。
該準分子雷射之波長可在190奈米至480奈米之範圍內且較佳為308奈米,因為在該等波長處矽能量吸收高。
雷射能量可在5焦耳至25焦耳之範圍內。為達成該等能量,使雷射放電體積最佳化為通常10釐米(內部電極間距)×7釐米至10釐米(放電寬度)×100釐米至200釐米(放電長度)。
脈衝持續時間對應於用於減少摻雜物擴散之快速加熱與用於減少缺陷形成之相對緩慢冷卻之間的最佳時間,且可在100奈秒至1000奈秒之範圍內,較佳為在100奈秒至300奈秒之範圍內。
在一較佳實施例中,準分子雷射可經調適以產生大於80平方釐米(較佳為100平方釐米)之一大面積輸出光束。
在另一較佳實施例中,準分子雷射可經調適以產生具有1焦耳每平方釐米與10焦耳每平方釐米之間的能量密度之一雷射光束。
根據本發明,用於匹配雷射光束點尺寸之構件可包括一可變孔隙。該可變孔隙不僅可界定光束點尺寸及/或形狀,亦可透過藉由一高解析度成像系統使此孔隙成像而明顯有助於獲得清晰影像邊緣(圖4,f),藉此減少衰減區域及重疊效應。
替代地,根據本發明,用於匹配雷射光束點尺寸之構件包括具有可變影像放大倍數之一光學系統。在如圖6所示之此光學系統中,可藉由一延遲線而調整一第一透鏡或一第一群組透鏡(物鏡,第1群組)與一第二透鏡或第二群組透鏡(物鏡,第2群組)之間的距離,從而調整該系統之放大倍數(通常為自4倍至8倍)。
具有可變影像放大倍數之光學系統可與一可變孔隙組合或不組合地使用。
在本發明之一實施例中,選定區域上之光束點尺寸可調整成自1平方釐米至4.5平方釐米的矩形形狀。
根據本發明之一設備可進一步包括用於沿XYZ方向對準光束點與選定區域之構件。
較佳地,焦點深度應儘可能長且較佳為大於100微米,以便無需極精確、複雜及昂貴地沿焦點調整位置。
雷射光束入射於選定區域上之角度相對於與半導體材料層正交之平面可成一角度(通常為5°),以避免離開表面之反射光被射回光學系統中。
根據本發明之一設備可進一步包括定位於用於調整雷射光束點尺寸之構件之前的一光束均化器。
根據本發明之一設備可進一步包括一圖案辨識系統。此圖案辨識系統可包括一相機,該相機係機械地連結至用於固持半導體材料之一平台且定位於材料層表面上方。在一特定實施例中,來自該相機之影像可經處理以定位在半導體材料上經蝕刻之若干(通常為3個)對準標記。該等對準標記可提供該半導體材料在該設備座標系統中的精確位置。
根據本發明之設備可用於製得半導體材料或裝置,諸如(但不限於)CMOS影像感測器及3D記憶體。
關於CMOS影像感測器,本發明之方法及設備對於背面照明CMOS影像感測器極為有用,其中將光收集於裝置背面上,而在正面上執行讀出/電荷收集。背面照明需要以極好均勻性之活化速率及深度來活化背面摻雜物。此外,活化製程必須維持極高表面品質以在整個感測器上維持影像品質。藉由使用本發明之方法及設備,可藉由一個脈衝輻射一或多個整個感測器之背面,藉此避免重複性地掃描或橫越且達成所需之感測器均勻性。
根據本發明之一方法的實例
步驟0:載入晶圓及相對於光束點粗略地定位晶圓
步驟1:選擇輻射參數:
基於下列選擇輻射參數
- 特定晶圓基板上所需之能量密度(例如,2焦耳每平方釐米)
- 晶圓上之處理區域的尺寸(XW×YW)(例如,18毫米×12毫米)
- 晶圓上待輻射之晶粒相對於一參考位置之座標((Xi,Yi),i=1至N,其中N為待輻射晶粒之數量)。
步驟2:調整系統放大倍數:
- 計算光學系統之放大倍數(G),其將在晶圓上產生最接近於晶圓上所期望尺寸(XW×YW)之一點尺寸,同時使孔隙葉片處於其完全打開位置(Xopen=96毫米,Yopen=76毫米)。在此實例中,G=Xopen/XW=96/18=5.33。
- 將延遲線位置調整為一預設定位置(由先前校準決定),其對應於所期望之放大倍率,導致晶圓上之一點尺寸為96/5.33×72/5.33=18毫米×13.5毫米。亦需要精細地調整物鏡群組之焦點。
步驟3:調整遮罩尺寸:
- 調整孔隙葉片位置以達成所需光束尺寸。在此實例中,打開位置中留有兩個垂直葉片(調整X)且調整兩個水平葉片以達到Y=12毫米,導致晶圓上之一點尺寸為標稱18毫米×12毫米。
- 精細地調諧孔隙葉片位置。
步驟4:相對於待處理之晶圓來定位雷射點
- 一圖案辨識步驟將相對於晶圓平台座標系統而將3個對準標記之精確位置定位於晶圓上
- 移動晶圓平台以使待處理之第一晶粒的位置疊合雷射點位置。
步驟5:輻射
- 該雷射以所需能量密度輻射第一晶粒。輻射能量係藉由調整雷射充電電壓及使用光束路徑中之可變衰減器而加以控制。
- 將晶圓平台移動至下一晶粒位置(Xi,Yi)。
- 重複輻射及移動晶圓平台直至輻射所有待處理之晶粒為止。
a...晶粒
b...雷射點
c...雷射點重疊之部分
e...晶粒上之均勻輻射能量分佈
f...清晰影像邊緣
圖1繪示一先前技術方法。
圖2繪示另一先前技術方法。
圖3繪示根據本發明之一方法。
圖4繪示根據本發明之一整個晶粒上方的一較佳輻射能量分佈。
圖5繪示一可變孔隙。
圖6繪示具有可變影像放大倍數之一光學系統。
a...晶粒
b...雷射點
Claims (12)
- 一種輻射半導體材料之方法,其包括:選擇一半導體材料層表面之一區域,該區域具有一區域尺寸;利用具有一光束點尺寸之一準分子雷射來輻射該半導體材料層表面之該區域;及藉由該光束點尺寸可變地匹配於選定的該區域尺寸而調整該光束點尺寸;該方法之特徵為藉由改變其影像形成於該半導體材料層表面上之一可變孔隙的尺寸及形狀而匹配該光束點尺寸。
- 如請求項1之方法,其中匹配該光束點尺寸包括以可變影像放大倍數來產生該可變孔隙之該影像在該半導體材料層表面上。
- 如請求項1或2之方法,其進一步包括沿XYZ方向使一光束點與選定的該區域對準。
- 如請求項1或2之方法,其中選定的該區域為至少一整個晶粒。
- 如請求項1或2之方法,其進一步包括在使該光束點尺寸匹配於選定的該區域尺寸之前均勻化一雷射光束。
- 一種用於輻射半導體材料之設備,其包括:一準分子雷射,其係用於輻射一半導體材料層表面之一選定區域,該準分子雷射具有一雷射光束點尺寸且該選定區域具有一區域尺寸;及 一用於調整該雷射光束點尺寸之構件,其包括用於可變地匹配該雷射光束點尺寸於選定的該區域尺寸之構件;該設備之特徵為用於可變地匹配該雷射光束點尺寸於選定的該區域尺寸之該構件包括一可變孔隙及用於形成該可變孔隙之一影像於該半導體材料層表面上之一高解析度成像系統。
- 如請求項6之設備,其中該準分子雷射係經調適以產生具有1焦耳每平方釐米與10焦耳每平方釐米之間的一能量密度之一雷射光束。
- 如請求項6或7之設備,其中該用於匹配該雷射光束點尺寸之構件包括具有可變影像放大倍數之一光學系統。
- 如請求項6或7之設備,其進一步包括用於沿XYZ方向對準一光束點與該選定區域之構件。
- 如請求項6或7之設備,其中該光束點尺寸匹配至少一整個晶粒。
- 如請求項6或7之設備,其進一步包括定位於該用於調整該雷射光束點尺寸之構件之前的一光束均化器。
- 一種如請求項6至11中之任一項之設備用於製造半導體材料的用途。
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2009
- 2009-04-07 EP EP09305290A patent/EP2239084A1/en not_active Withdrawn
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2010
- 2010-03-29 CN CN2010800182279A patent/CN102413986A/zh active Pending
- 2010-03-29 WO PCT/EP2010/054135 patent/WO2010115763A1/en active Application Filing
- 2010-03-29 SG SG10201401316UA patent/SG10201401316UA/en unknown
- 2010-03-29 US US13/263,219 patent/US9700959B2/en active Active
- 2010-03-29 KR KR1020117026379A patent/KR20120004514A/ko active Search and Examination
- 2010-03-29 SG SG2011071800A patent/SG175029A1/en unknown
- 2010-03-29 EP EP10711398.7A patent/EP2416920B1/en active Active
- 2010-03-29 JP JP2012503965A patent/JP2012522646A/ja active Pending
- 2010-04-07 TW TW099110779A patent/TWI512794B/zh active
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2015
- 2015-07-22 JP JP2015144630A patent/JP6312636B2/ja active Active
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TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
TW461113B (en) * | 1999-04-19 | 2001-10-21 | Sony Corp | Process of crystallizing semiconductor thin film and laser irradiation system |
Also Published As
Publication number | Publication date |
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TW201042710A (en) | 2010-12-01 |
SG10201401316UA (en) | 2014-07-30 |
CN102413986A (zh) | 2012-04-11 |
EP2239084A1 (en) | 2010-10-13 |
EP2416920A1 (en) | 2012-02-15 |
JP2012522646A (ja) | 2012-09-27 |
KR20120004514A (ko) | 2012-01-12 |
JP2016006882A (ja) | 2016-01-14 |
WO2010115763A1 (en) | 2010-10-14 |
SG175029A1 (en) | 2011-11-28 |
US20120171876A1 (en) | 2012-07-05 |
US9700959B2 (en) | 2017-07-11 |
EP2416920B1 (en) | 2023-11-15 |
JP6312636B2 (ja) | 2018-04-18 |
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