CN102413986A - 用激光能照射半导体材料表面的方法和设备 - Google Patents
用激光能照射半导体材料表面的方法和设备 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 title claims abstract description 20
- 230000001678 irradiating effect Effects 0.000 title abstract description 10
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000003760 hair shine Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 208000003443 Unconsciousness Diseases 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及照射半导体材料的方法,其包括:选择半导体材料层表面的区域(a),此区域(a)具有区域尺寸;用具有束光斑尺寸(b)的准分子激光器照射半导体材料层表面的区域(a);并且调节此束光斑尺寸(b);其中调节束光斑尺寸(b)包括使束光斑尺寸(b)可变地匹配选择区域的尺寸(a)。本发明还涉及照射半导体材料的设备,包括:准分子激光器,用于照射半导体层表面的选择区域(a);此激光器具有针对具有区域尺寸的选择区域(a)的激光束光斑尺寸(b);和用于调节激光束光斑尺寸的装置;其中用于调节激光束光斑尺寸(b)的装置适用于使激光束光斑尺寸(b)可变地匹配选择区域的尺寸(a)。
Description
发明领域
本发明涉及用激光器照射半导体材料表面的方法。本发明还涉及用于照射半导体材料表面的激光设备。
发明背景
半导体材料表面的激光照射因为其应用而众所周知,所述应用例如非晶硅的加温退火使其再次结晶,和掺杂剂激活。与传统的加热过程相比,此技术通过实现非常快速的加热处理和加热区域的浅深度,而具有显著的优势。
对于半导体应用的传统激光照射过程的普遍问题是,由于热处理所需的高能量密度和传统地可得到的激光源的低输出能量,因而激光斑点的尺寸远小于模具的尺寸,此模具也被称为芯片或者器件。结果是,为了覆盖整个模具,激光斑点必须跨过或者扫描此模具,这导致了很多劣势。
正如Current和Borland (Technologies New Metrology for Annealing ofUSJ and Thin Films,16th IEEE International Conference on Advanced ThermalProcessing of Semiconductors-RTP2008)所描述的和图1、图2所图示的,第一个劣势在于,如果激光斑点(b)扫描或者跨过模具(a),则连续的激光斑点将会在此模具的一些部分(c)上交叠,导致在掺杂剂激活率或深度的不均匀和在表面质量的不均匀。
另一个劣势是,如果在相同的表面区域上需要多个激光脉冲,则为了平均在处理表面区域的每一个点上的多个激光脉冲,这些激光点以非常高的交叠性扫描或者跨过表面,造成有限的生产率和周期性的不均匀性,通常所说的波纹模式(moiré-patterns)。
另一个普遍问题是,不同类型应用的模具通常具有不同的尺寸,此外在一些应用中,只有部分模具必须被照射。技术人员普遍知晓,为了能够用有限的交叠性处理不同模具尺寸的模具和模具的不同部分,束光斑借助于多种具有不同尺寸的遮光板(mask)来被定形。由于因此所导致的在每次需要其他尺寸时遮光板必须被改变和调整,使得制造的灵活性受到了严重的限制并且停机时间可能会是显著的。
在为了克服上述缺陷所做的尝试中,WO 01/61407(Hawryluk等人)描述了一种激光照射设备,其运用可变的孔阑来限定暴露区域的尺寸。
然而,根据Hawryluk等人的观点,一个明显的缺陷是,所需要的用以得到满意的均匀性的激光光源需要是具有多于1000个空间模的固状激光器,这不是当前商业上可以得到的激光源。
另外一个制定束光斑尺寸的例子是US 2006/0176920,其中Park等人描述了一种包括强度模式调整单元的激光照射设备,该强度模式调整单元具有通过区域、半通过区域和阻断区域,以通过调整激光束的长度来变化地调整带状激光束的强度。
考虑到上述激光照射过程的缺陷,对根据本发明的激光照射方法和设备有一个明确地需求,作为第一个目标,本发明可以提供处理半导体材料层以在模具内和在晶片内得到可接受的均匀性的能力,同时保持可接受的生产率和制造灵活性。
作为第二个目标,本发明可以提供交叠效应和衰减区的减少。
作为另外一个目标,本发明可以提供在材料层表面上产生具有可变图像形状的束的能力。
作为另外一个目标,本发明可以提供使激光能向热能的转换达到最大化和在低温下照射的能力。
本发明通过使激光束的光斑尺寸可变地匹配选择区域的尺寸,来实现上述目标。
发明概述
本发明涉及一种照射半导体材料的方法,其包括:
-选择半导体材料层表面的区域,此区域具有区域尺寸;用具有束光斑尺寸的准分子激光器照射半导体材料层表面的区域;
-并且调节束光斑尺寸;
其特征在于,调节束光斑尺寸包括使束光斑尺寸可变地匹配选择区域的尺寸。
本发明还涉及一种照射半导体材料的设备,其包括:
-准分子激光器,用于照射半导体层表面的选择区域,此激光器具有针对具有区域尺寸的选择区域的激光束光斑尺寸;
-和调节激光束光斑尺寸的装置;
其特征在于,调节激光束光斑尺寸的装置适用于使激光束光斑尺寸可变地匹配选择区域的尺寸。
附图简述
图1图示了一种现有技术方法。
图2图示了另外一种现有技术方法。
图3图示了根据本发明的一种方法。
图4图示了根据本发明的在完整的模具上方的一种优选的照射能量分布。
图5图示了可变孔。
图6图示了具有可变图像放大倍率的光学系统。
发明详述
本领域技术人员会理解,下述实施方案仅是根据本发明的例证性实施方案,并且不限制本发明所设定的范围。其他的实施方案也可以被考虑。
根据本发明的第一种实施方案,提出了一种照射半导体材料的方法,其包括:
-选择半导体材料层表面的区域,该区域具有区域尺寸;
-用具有束光斑尺寸的准分子激光器照射半导体材料层表面的此区域;
-并且调节束光斑的尺寸;
其特征在于,调节束光斑尺寸包括使束光斑尺寸可变地匹配选择区域的尺寸。
通过束光斑尺寸可变地匹配选择区域的尺寸,使此方法由于交叠效应和衰减区的减少而可以提供能接受的在模具和晶片内的均匀性。而且,通过在材料层表面上产生具有可变形状和尺寸的束光斑的能力,此方法可以提供能接受的生产率和制造灵活性。
此半导体材料层可以是任何适合半导体应用的材料,所述应用例如但不局限于:非掺杂硅,掺杂硅,注入硅,晶体硅,非晶硅,锗硅,氮化锗,以及III-V化合物半导体例如氮化镓、碳化硅和其他类似物。
在根据本发明的一种实施方案中,使束光斑尺寸匹配可以通过改变被成像在材料层表面上的可变孔的尺寸和形状来实现。本质上,这种孔是这样的洞或者开口,该洞或者开口被激光束穿过并且限定了在选择区域上的束光斑的形状和尺寸。通过机械地改变此可变孔,束光斑的尺寸和/或者形状可以匹配于选择区域的尺寸和/或者形状。这种可变孔可以配备有位置能够被不同地调节的叶片,如图5所图示。
依据所需的束光斑精确度,可能需要对孔微调,以校正不精确性和使光斑尺寸与选择区域准确地匹配。此微调可以通过用相机观察材料层表面上的束光斑、测量光斑尺寸以及调节孔的开口尺寸和形状来实现。如果孔配备有叶片,这些叶片的位置可以被微整,以达到具有所需精确度的目标光斑尺寸。
在根据本发明或者与可变孔相结合的替代性实施方案中,匹配束光斑尺寸可以通过具有可变图像放大倍率的光学系统来实现。这种光学系统适用于在晶片上产生孔的可变放大倍率的图像。
而且根据本发明,此方法可以包括将束光斑与选择区域在XYZ方向上对齐。
在本发明的且如图3所图示的优选实施方案中,选择区域可以是至少一个完整的模具。该完整的模具可以由一个激光脉冲处理。此模具也可以接收全部都覆盖住整个模具的多个激光脉冲。进一步如图3所图示,选择区域可以覆盖多个模具。图4中表明,照射一个或者多个完整的模具可以显著地有助于提高在模具(e)上方的均匀照射能量分布和有助于减小交叠效应(c),从而提高了过程的均匀性。
根据本发明的方法还可以包括在使束光斑尺寸匹配于选择区域的尺寸之前使激光束均匀。使激光束均匀会明显地有助于提高过程的均匀性。
根据本发明,还提供一种照射半导体材料的设备,其包括:
-准分子激光器,用来照射半导体层表面的选择区域,此激光器具有针对具有区域尺寸的选择区域的激光束光斑尺寸;
-和用来调节激光束光斑尺寸的装置;
其特征在于,用于调节激光束光斑尺寸的装置适应于使激光束光斑尺寸可变地匹配于选择区域的尺寸。
此准分子激光器可以是任何其波长、能量和脉冲宽度与过程相适合的准分子激光器,优选氯化氙准分子激光器。
由于硅在下述这些波长处的高能量吸收,此准分子激光器的波长可以在190nm到480nm的范围内,且优选308nm。
激光能可以在5焦耳到25焦耳范围内。为了获得这些能量,激光放电体积被最优化为典型地10cm(电极间距离)x7到10cm(放电宽度)x100到200cm(放电长度)。
脉冲宽度与在用于减少掺杂剂扩散的快速加热和用于减少缺陷形成的相对地慢速冷却之间的最适宜情况相符,并且可以在100ns到1000ns的范围内,优选在100ns和300ns之间。
在优选的实施方案中,此准分子激光器可以适应于产生大于80cm2、优选100cm2的大区域的输出束。
在另一个优选的实施方案中,此准分子激光器可以适应于产生能量密度在1J/cm2和10J/cm2之间的激光束。
根据本发明,用于使激光束光斑尺寸匹配的装置可以包括可变孔。此可变孔不但可以限定束光斑尺寸和/或者形状,而且还可以通过该孔借助于高分辨率成像系统的成像来显著地帮助获得清晰的图像边缘(图4,f),从而减小了衰减区和交叠效应。
替代地根据本发明,用于使激光束光斑尺寸匹配的装置包括具有可变图像放大倍率的光学系统。在这种如图6所图示的光学系统中,第一透镜或者第一组透镜(物镜,第一组)和第二透镜或者第二组透镜(物镜,第二组)之间的距离可以由延迟线来调节,以调节此系统的放大倍率(一般地从4X到8X)。
该具有可变图像放大倍率的光学系统可以与或者不与可变孔组合地使用。
在本发明的实施方案中,选择区域上的束光斑尺寸可以在1到4,5cm2的长方形形状内调节。
根据本发明的设备,还可以包括用于将束光斑与选择区域在XYZ方向上对齐的装置。
优选地,为了避免对于沿着焦距的非常精确、复杂和昂贵的位置调节的需要,焦距的深度可以尽可能的长,并且优选多于100微米。
为了避免表面的反射光射回光学系统,在选择区域上的激光束的入射角可以相对于与半导体材料层正交的平面成一角度(通常5°)。
根据本发明的设备,还可以包括被定位在用于调节激光束光斑尺寸的装置之前的光束均匀器。
根据本发明的设备还可以包括模式识别系统。这种模式识别系统可以包括相机,该相机与用于保持住半导体材料的平台机械地相连,并且被位于材料层表面上方。在具体的实施方案中,来自相机的图像可以被处理成用以定位多个(通常3个)已经被蚀刻在半导体材料上的对齐记号。此对齐记号提供了半导体材料在设备坐标系中的精确位置。
根据本发明的设备可以被用于制造半导体材料或器件,例如但不局限于CMOS图像传感器和3D存储器。
关于CMOS图像传感器,本发明的方法和设备对于背面被照亮的CMOS图像传感器可能是非常有用的,其中在器件的背面上采集光,同时在前面进行读出/电荷采集。背面照亮需要背面掺杂剂以良好均匀性的激活率和深度来激活。而且,此激活过程必须保持非常高的表面质量,以保持整个传感器上方的图像的质量。通过使用本发明的方法和设备,使得用一个脉冲来照射一个或者多个完整传感器的背面可以成为可能,从而避免了交叠地扫描或者步进,并且获得了所需的传感器均匀性。
根据本发明的方法的实施例
步骤0:晶片相对于束光斑的加载和粗略定位
步骤1:照射参数的选择:
照射参数的选择依据
-具体的晶片衬底所要求的能量密度(例如,2J/cm2)
-晶片上处理区域(XWxYW)的尺度(例如,18x12mm)
-在晶片上待被照射的模具相对于参考位置的坐标((Xi,Yi)从i=1到N,N是待被照射的模具的数量)。
步骤2:系统放大倍率的调节:
-光学系统的放大倍率(G)的计算完成,这会在晶片上在最靠近晶片上的所需要尺度处(XWxYW)产生光斑尺寸,同时使孔叶片处于其完全打开的位置(Xopen=96mm,Yopen=76mm)。在该实例中,G=Xopen/XW=96/18=5,33。
-延迟线的位置被调节至对应于所需要放大倍率的(由预先校准确定的)预调位置,使得在96/5,33x72/5,33=18x13,5mm的晶片上产生光斑尺寸。可能还需要对物镜组的焦距微调。
步骤3:遮光板尺度的调节:
-调节孔叶片的位置来获得所需的束的尺寸。在此例子中,使两个垂直叶片(调节X)处于打开位置,并且两个水平叶片被调节到Y=12mm,使得晶片上的光斑尺寸额定地为18x12mm。
-孔叶片位置的微调整。
步骤4:相对于待被处理晶片的激光光斑定位:
-模式识别步骤将相对于晶片平台坐标系统在晶片上定位3个对齐标记的精确位置。
-晶片平台被移动,以使激光光斑的位置与待被处理的第一模具的位置交叠。
步骤5:照射:
-激光用所需的能量密度照射第一模具。通过调节激光的充电电压和在束路径上运用可变衰减器来控制照射的能量。
-晶片平台被移动到下一个模具的位置(Xi,Yi)
-重复照射和移动晶片平台,直到所有待处理的模具都被照射。
Claims (14)
1.一种照射半导体材料的方法,包括:
-选择半导体材料层表面的区域,所述区域具有区域尺寸;
-用具有束光斑尺寸的准分子激光器照射所述半导体材料层表面的所述区域;
-并且调节所述束光斑尺寸;
其特征在于,调节所述束光斑尺寸包括使所述束光斑尺寸可变地匹配所选择的区域的尺寸。
2.根据权利要求1所述的方法,其中使所述束光斑尺寸匹配是通过改变被成像在所述材料层表面上的可变孔的尺寸和形状来完成的。
3.根据权利要求1所述的方法,其中使所述束光斑尺寸匹配是通过改变具有可变图像放大倍率的光学系统的放大倍率来完成的。
4.根据权利要求1或3所述的方法,还包括将所述束光斑与所选择的区域在XYZ方向上对齐。
5.根据权利要求1到4所述的方法,其中所选择的区域是至少一个完整的模具。
6.根据权利要求1或5所述的方法,还包括在使所述束光斑尺寸匹配所选择的区域的尺寸之前使激光束均匀。
7.一种照射半导体材料的设备,包括:
-准分子激光器,其用于照射半导体材料层表面的选择区域,所述激光器具有针对具有区域尺寸的所述选择区域的激光束光斑尺寸;
-和用于调节所述激光束光斑尺寸的装置;
其特征在于,用于调节所述激光束光斑尺寸的所述装置适用于使所述激光束光斑尺寸可变地匹配所述选择区域的尺寸。
8.根据权利要求7所述的设备,其中所述准分子激光器适用于产生具有在1J/cm2到10J/cm2之间的能量密度的激光束。
9.根据权利要求7到8所述的设备,其中用于使所述激光束光斑尺寸匹配的所述装置包括成像在所述材料层表面上的可变孔。
10.根据权利要求7到9所述的设备,其中用于使所述激光束光斑尺寸匹配的所述装置包括具有可变图像放大倍率的光学系统。
11.根据权利要求7到10所述的设备,还包括用于使所述光斑与所述选择区域在XYZ方向上的对齐的装置。
12.根据权利要求7到11所述的设备,其中所述光斑尺寸匹配至少一个完整的模具。
13.根据权利要求7到12所述的设备,还包括被定位在用于调节所述激光束光斑尺寸的所述装置之前的光束均匀器。
14.根据权利要求7-13所述的设备用于制备半导体材料的用途。
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- 2010-03-29 JP JP2012503965A patent/JP2012522646A/ja active Pending
- 2010-03-29 KR KR1020117026379A patent/KR20120004514A/ko active Search and Examination
- 2010-03-29 CN CN2010800182279A patent/CN102413986A/zh active Pending
- 2010-03-29 WO PCT/EP2010/054135 patent/WO2010115763A1/en active Application Filing
- 2010-03-29 EP EP10711398.7A patent/EP2416920B1/en active Active
- 2010-04-07 TW TW099110779A patent/TWI512794B/zh active
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Also Published As
Publication number | Publication date |
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TWI512794B (zh) | 2015-12-11 |
EP2416920A1 (en) | 2012-02-15 |
SG175029A1 (en) | 2011-11-28 |
JP2012522646A (ja) | 2012-09-27 |
EP2416920B1 (en) | 2023-11-15 |
EP2239084A1 (en) | 2010-10-13 |
JP2016006882A (ja) | 2016-01-14 |
SG10201401316UA (en) | 2014-07-30 |
JP6312636B2 (ja) | 2018-04-18 |
US9700959B2 (en) | 2017-07-11 |
TW201042710A (en) | 2010-12-01 |
KR20120004514A (ko) | 2012-01-12 |
US20120171876A1 (en) | 2012-07-05 |
WO2010115763A1 (en) | 2010-10-14 |
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