TWI511333B - Multi - wafer structure with buffer film - Google Patents

Multi - wafer structure with buffer film Download PDF

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Publication number
TWI511333B
TWI511333B TW100133168A TW100133168A TWI511333B TW I511333 B TWI511333 B TW I511333B TW 100133168 A TW100133168 A TW 100133168A TW 100133168 A TW100133168 A TW 100133168A TW I511333 B TWI511333 B TW I511333B
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TW
Taiwan
Prior art keywords
wafer
light
resin layer
buffer film
film
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TW100133168A
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English (en)
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TW201216522A (en
Inventor
Akira Ishigami
Shiyuki Kanisawa
Hidetsugu Namiki
Hideaki Umakoshi
Masaharu Aoki
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Dexerials Corp
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Publication of TW201216522A publication Critical patent/TW201216522A/zh
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Publication of TWI511333B publication Critical patent/TWI511333B/zh

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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Description

多晶片構裝用緩衝膜
本發明係關於一種多晶片構裝用緩衝膜，及使用其製造多晶片模組之方法。
先前以來，隔著絕緣性接著劑或異向性導電接著劑利用接合頭對基板加熱加壓，而總括連接複數個LED元件等晶片元件。然而，由於晶片元件間高度之差異或偏差，或者晶片元件或基板所形成之配線厚度或凸塊高度之差異或偏差，故而對每個晶片元件所施加之熱量與壓力不同，結果有生成未充分地加熱加壓之晶片元件或過度地加熱加壓之晶片元件之虞，關於前者有產生連接不良之虞，關於後者有產生晶片元件破損等之虞。
因此，於利用接合頭進行連接操作時，為消除晶片元件間高度之差異或偏差等，提出有於基板與接合頭之間配置耐熱性橡膠狀彈性體作為緩衝材料，隔著耐熱性橡膠狀彈性體於基板加熱加壓晶片元件。
專利文獻1：日本特開平10-256311號公報
然而，如專利文獻1所揭示，於將橡膠狀彈性體用作緩衝層之情形時，雖然各晶片元件之連接強度良好，但由於加熱加壓頭使緩衝層發生於基板平面方向押展開之變形，且伴隨該變形而產生晶片元件之對準偏移，根據不同情形有連接可靠性下降之問題。
為解決以上之先前問題點，本發明之目的在於，於多晶片構裝時，不產生對準偏移，且可確保良好之連接可靠性。
本發明人發現藉由使用積層有耐熱性樹脂層及柔軟性樹脂層之構造者作為於多晶片構裝時應使用之緩衝材料，可達成上述目的，從而完成本發明，耐熱性樹脂層係應配置於晶片元件側，且不超出特定之線膨脹係數並且相對不易變形，柔軟性樹脂層係應配置於接合頭側，且由表示特定之蕭氏A硬度之材料所構成並且相對容易變形。
即，本發明提供一種多晶片構裝用緩衝膜，其具有耐熱性樹脂層，及形成於其上之柔軟性樹脂層，耐熱性樹脂層具有80ppm/℃以下之線膨脹係數，柔軟性樹脂層係由根據JIS-K6253之蕭氏A硬度為10～80之樹脂材料所形成。
又，本發明提供一種製造方法，其係製造藉由於基板上隔著接著劑利用接合頭加熱加壓複數個晶片元件來進行多晶片構裝而成的多晶片模組之方法，其具有以下之步驟(A)～(C)：步驟(A)將複數個晶片元件隔著接著劑對準且預黏貼於基板；步驟(B)於晶片元件與接合頭之間，以使該耐熱性樹脂層成為晶片元件側之方式配置上述之多晶片構裝用緩衝膜；步驟(C)隔著多晶片構裝用緩衝膜，利用接合頭對基板加熱加壓，藉此將複數個晶片元件連接於基板。
本發明之多晶片構裝用緩衝膜具有於耐熱性樹脂層積層有柔軟性樹脂層之構造，耐熱性樹脂層係應配置於晶片元件側，且不超出特定之線膨脹係數並且相對不易變形，柔軟性樹脂層係應配置於接合頭側，且由表示特定之蕭氏A硬度之材料所構成並且相對容易變形。因此，於多晶片構裝時，於利用接合頭加熱加壓緩衝膜時，鄰接晶片元件之耐熱性樹脂層不易變形，因此結果能夠抑制晶片元件之對準偏移。另一方面，鄰接接合頭之柔軟性樹脂層易於變形，故而可消除晶片元件高度之差異或偏差等，對複數個晶片元件分別進行良好之加熱加壓，確保良好之連接可靠性。
以下，一面參照圖式一面詳細說明本發明。
圖1係包含耐熱性樹脂層1，及形成於其上之柔軟性樹脂層2之多晶片構裝用緩衝膜10的剖面圖。
構成本發明之多晶片構裝用緩衝膜10之耐熱性樹脂層1係於多晶片構裝時，配置於晶片元件側，為有效地抑制對準偏移，而於玻璃轉移溫度以下之溫度區域中具有80ppm/℃以下、較佳為20～50ppm/℃之線膨脹係數。再者，只要為線膨脹係數之較佳範圍之下限以上，則可充分地消除晶片元件等之高度差異或偏差。又，只要為線膨脹係數之較佳範圍之上限以下，則可更抑制對準偏移。
此種耐熱性樹脂層1，可列舉：聚醯亞胺樹脂膜(例如，宇部興產(股份有限公司)之Upilex-25S等)、聚酯樹脂膜(例如，帝人(股份有限公司)之Teijin Tetoron Film等)、聚氯乙烯樹脂膜(例如，太平化學製品(股份有限公司)之Evilon CB3005等)、聚烯烴樹脂膜(Tech jam(股份有限公司)之SAN8041等)或氟樹脂膜(日東電工(股份有限公司)之NITOFLON(聚四氟乙烯)等)。
耐熱性樹脂層1之層厚，若過厚則無法充分地消除晶片元件等之高度差異或偏差，故而較佳為200μm以下，更佳為10～50μm。再者，只要為該層厚之較佳範圍之下限以上，則可更有效地抑制對準偏移，只要為較佳範圍之上限以下，則可充分地消除晶片元件等之高度差異或偏差。
構成本發明之多晶片構裝用緩衝膜10之柔軟性樹脂層2於多晶片構裝時，配置於接合頭側，且係由根據JIS-K6253之蕭氏A硬度為10～80、較佳為40～75之樹脂材料所形成。只要蕭氏A硬度在該範圍內，則可充分地消除晶片元件等之高度差異或偏差。
此種樹脂材料，較佳可列舉聚矽氧樹脂材料。更佳可列舉陰離子活性(anionic living)聚合性之聚矽氧樹脂組成物。具體而言，可列舉：聚矽氧(Shin-Etsu Silicones(股份有限公司)之KE-1281、X-32-2020，MOMENTIVE公司之XE13-C1822等)、二甲基聚矽氧(Shin-Etsu Silicones(股份有限公司)之KER-2600、KER-2500等)。
柔軟性樹脂層2之層厚，若過薄則無法充分地消除晶片元件等之高度差異或偏差，且未獲得良好之連接可靠性，故而較佳為10μm以上，更佳為40～60μm。再者，只要為該層厚之較佳範圍之下限以上，則可更充分地消除晶片元件等之高度差異或偏差，只要為較佳範圍之上限以下，則能夠確保良好之連接可靠性。
於不損及本發明之效果之範圍內，以上說明之多晶片構裝用緩衝膜10亦可於耐熱性樹脂層1與柔軟性樹脂層2之間設置其他樹脂層。
本發明之多晶片構裝用緩衝膜10可藉由於膜狀之耐熱性樹脂層1，根據常用方法塗佈用以形成柔軟性樹脂層2之樹脂材料並使其乾燥(或聚合)而製造。
繼而，本發明之多晶片構裝用緩衝膜10可較佳應用於藉由於基板上隔著接著劑使用接合頭加熱加壓複數個晶片元件而進行多晶片構裝之多晶片模組之製造方法。該多晶片模組之製造方法具有以下之步驟(A)～(C)：
<步驟(A)>
首先，將晶片元件隔著接著劑對準且預黏貼於基板。具體而言，如圖2所示，於由不鏽鋼等所構成之公知之熱壓接用的平台21上配置形成有配線22與凸塊23之基板24，隔著接著劑25將晶片元件26以倒裝晶片方式對準且預黏貼。關於晶片元件26之對準操作及預黏貼操作本身，並無特別限制，可應用先前之多晶片模組之製造方法中之對準操作及預黏貼操作。
於本發明之製造方法中可應用之晶片元件26，可列舉IC元件、LED(發光二極體)元件等。
又，作為形成有配線22與凸塊23之基板24，可列舉含有由各種金屬材料或ITO等透明電極材料等，藉由印刷法、乾鍍法、濕鍍法、光微影法等而形成之配線，及藉由蒸鍍法、鍍敷法、印刷法、接合法(柱形凸塊)等而形成之金凸塊、焊錫凸塊等凸塊的玻璃基板、塑膠基板、陶瓷基板等。
接著劑25，可使用公知之絕緣性接著膏(NCP，)或膜(NCF)、異向性導電膏(ACP)或膜(ACF)。尤其，於晶片元件26為LED元件之情形時，作為接著劑25，就生產性等方面而言較佳為使用異向性導電接著劑(ACP、ACF)，就提高光提取效率方面而言，特佳為異向性導電接著劑本身顯示出光反射性。較佳為於具有此種光反射性之異向性導電接著劑中含有光反射性針狀絕緣粒子。關於此詳細情形，於步驟(C)之說明之後，再次說明。
<步驟(B)>
繼而，如圖3所示，於晶片元件26與較佳為具有金屬壓接面且具備加熱器之接合頭27之間，配置本發明之多晶片構裝用緩衝膜10。於此情形時，使多晶片構裝用緩衝膜10之耐熱性樹脂層1成為晶片元件26側。
此處，多晶片構裝用緩衝膜10亦能夠如圖3所示，以單片來應用，但較佳為如圖4所示，以捲軸而應用。若為捲軸，則多晶片構裝用緩衝膜10之更換操作變得容易，可提高生產性。
<步驟(C)>
繼而，如圖5所示，隔著多晶片構裝用緩衝膜10，利用接合頭27對基板24加熱加壓複數個晶片元件26。加熱加壓結束之後，可獲得圖6所示之多晶片模組50。
如上所述，對可較佳用作接著劑25之具有光反射性之異向性導電接著劑進行詳細說明。
可較佳用於晶片元件為LED元件之情形時之接著劑係光反射性異向性導電接著劑，其係含有熱固性樹脂組成物、導電粒子、及縱橫比為特定範圍之光反射性針狀絕緣粒子者。可藉由使用針狀者作為光反射性絕緣粒子，而防止異向性導電接著劑產生龜裂並獲得較高之連接可靠性。
再者，於熱固性樹脂組成物含有球狀粒子之情形時，若樹脂組成物之伸縮性隨著溫度變化而下降(變硬)，則由於熱固性樹脂組成物(或其硬化物)之內部應力而於球狀粒子與熱固性樹脂組成物之界面易於產生龜裂。若光反射性異向性導電接著劑產生龜裂，則會有損連接可靠性。因此，光反射性異向性導電接著劑必需具有優異之強韌性，但如上所述，可藉由將縱橫比為特定範圍之針狀光反射性絕緣粒子添加至熱固性樹脂組成物中而對異向性導電接著劑賦予較高之強韌性。其原因在於，於熱固性樹脂組成物中，分別配置於無規則方向上之針狀光反射性絕緣粒子其本身易撓曲並且易彎曲，因此隨著溫度變化可將熱固性樹脂組成物之內部應力傳遞及吸收至針狀晶體中，於熱固性樹脂組成物中可抑制該內部應力傳遞。因此，含有光反射性針狀絕緣粒子之光反射性異向性導電接著劑發揮優異之強韌性，即便藉由溫度變化使熱固性樹脂組成物伸縮亦可抑制產生龜裂或接著面剝離。
此種光反射性針狀絕緣粒子較佳為由呈現白色之針狀無機化合物所構成，使入射至光反射性異向性導電接著劑之光反射至外部。藉由光反射性針狀絕緣粒子本身呈現白色，可使針對可見光之反射特性的波長相依性變小，且可有效地反射可見光。
此種光反射性異向性導電接著劑可藉由含有由呈現白色並且具有縱橫比為特定範圍之針狀形狀之無機化合物所構成的粒子(以下將其稱為「白色針狀無機粒子」)，抑制針對自發光元件出射之光之反射率下降而維持發光元件之發光效率，並且防止龜裂等而獲得較高之連接可靠性。
白色針狀無機粒子，例如可列舉：氧化鋅晶鬚、氧化鈦晶鬚、鈦酸鉀晶鬚、鈦酸晶鬚等鈦酸鹽晶鬚、硼酸鋁晶鬚、矽灰石(高嶺土矽酸鹽之針狀晶體)等針狀形狀之無機化合物。晶鬚係藉由特殊製法而成長為針狀之晶體，其具有晶體結構不紊亂因此富有彈性，且不易變形之優點。該等無機化合物於可見光區域中呈現白色，因此針對可見光之反射特性的波長相依性較小，且易於反射可見光。其中，氧化鋅晶鬚之白度較高，且即便於擔心硬化之異向性導電接著劑中之熱固性樹脂組成物之硬化物的光劣化之情形時，亦對於光劣化無觸媒性，故而特佳。
於白色針狀無機粒子由一根具有針狀形狀之晶體(單針狀晶體)所構成之情形時，該纖維徑(短方向粒徑)較佳為5μm以下。又，由單針狀晶體所構成之白色針狀無機粒子之縱橫比較佳為大於10且未達35，特佳為大於10且未達20。於白色針狀無機粒子之縱橫比大於10之情形時，可充分地傳遞及吸收熱固性樹脂組成物之內部應力。又，於白色針狀無機粒子之縱橫比未達35之情形時，針狀之晶體變得不易折彎，並且可均勻地分散至熱固性樹脂組成物中。於該縱橫比未達20之情形時，可進而提高熱固性樹脂組成物中之分散性。
如此，可藉由將縱橫比大於10且未達35之白色針狀無機粒子添加至熱固性樹脂組成物中，而提高熱固性樹脂組成物之強韌性，因此即便光反射性異向性導電接著劑伸縮亦可抑制接著面之剝離或龜裂產生。
再者，白色針狀無機粒子，亦可使用例如Tetrapod(註冊商標)之類的具有四面體之中心部與頂點分別結合而成之形狀等複數根針狀形狀的晶體(多針狀晶體)代替此種單針狀晶體。多針狀晶體之白色針狀無機粒子與單針狀晶體之白色針狀無機粒子相比，就導熱性大方面而言較優異，但為容積高於單針狀晶體之晶體結構，因此於熱壓接時必需注意使針狀部分不損傷基板或元件之接合零件。
又，針狀白色無機粒子例如亦可為利用矽烷偶合劑來進行處理者。藉由利用矽烷偶合劑來處理針狀白色無機粒子，可提高熱固性樹脂組成物中之分散性。因此，可將利用矽烷偶合劑處理之針狀白色無機粒子於短時間內均勻地混合至熱固性樹脂組成物中。
白色針狀無機粒子較佳為：其折射率(JIS K7142)較佳為大於熱固性樹脂組成物之硬化物之折射率(JIS K7142)，更佳為至少大0.02左右。其原因在於，若折射率之差較小，則該等之界面之反射效率下降。即，作為白色針狀無機粒子，即便為具有光反射性及絕緣性之無機粒子，亦無法應用如SiO2 之類，其折射率為所使用之熱固性樹脂組成物之折射率以下者。
白色針狀無機粒子之光反射性異向性導電接著劑中之摻合量若過少則有無法實現充分光反射之傾向，另一方面，若過多則有熱固性樹脂組成物之接著性下降之傾向，因此相對於熱固性樹脂組成物，較佳為1～50體積%(Vol%)，特佳為5～25體積%。
可應用於本發明之製造方法的光反射性異向性導電接著劑藉由含有此種白色針狀無機粒子來覆蓋導電粒子之大部分，因此於導電粒子呈現棕色等顏色之情形時，亦實現熱固性樹脂組成物之白色性。藉由此種白色性，使針對可見光之反射特性之波長相依性變小，且易於反射可見光，因此與基板電極之顏色種類無關，抑制自LED元件出射之光之反射率下降，並且LED元件可有效地利用朝向其下面側而發光之光。其結果，可提高LED元件之發光效率(光提取效率)。
再者，以上說明之光反射性異向性導電接著劑除白色針狀無機粒子以外，亦可添加由呈現白色之球狀形狀之無機化合物所構成之粒子(以下將其稱為「白色球狀無機粒子」)作為呈現白色之球狀形狀之絕緣粒子。可藉由添加白色針狀無機粒子以及白色球狀無機粒子，而使熱固性樹脂組成物進而白色化而進一步提高LED元件之光提取效率。又，於此情形時，亦可提高熱固性樹脂組成物之強韌性。此處，較佳為將白色針狀無機粒子之添加量(Vol%)設為與白色球狀無機粒子之添加量(Vol%)等量以上。
於光反射性異向性導電接著劑中，於添加白色針狀無機粒子及白色球狀無機粒子之情形時，光反射性異向性導電接著劑可發揮優異之強韌性，藉此即便伸縮亦可抑制接著面之剝離或龜裂產生。
如以上所說明之光反射性異向性導電接著劑所含有之導電粒子，可使用於異向性導電連接用之先前之導電粒子中所使用的金屬材料粒子。即，導電粒子之金屬材料，例如可列舉：金、鎳、銅、銀、焊錫、鈀、鋁、該等之合金、該等之多層化合物(例如，鍍鎳/閃鍍金物)等。
再者，以金、鎳或銅為金屬材料之導電粒子呈現棕色，故而較其他金屬材料可享有本發明之效果。即，如上所述，於熱固性樹脂組成物中，白色針狀無機粒子覆蓋導電粒子之大部分，因此抑制由導電粒子引起熱固性樹脂組成物呈現棕色，且熱固性樹脂組成物全體變為呈現較高之白色性。
又，導電粒子，亦可使用以金屬材料包覆樹脂粒子之金屬包覆樹脂粒子。此種樹脂粒子，可列舉：苯乙烯系樹脂粒子、苯代三聚氰胺樹脂粒子、尼龍樹脂粒子等。以金屬材料包覆樹脂粒子之方法，可採用先前公知之方法，例如可利用無電解電鍍法、電解電鍍法等。又，包覆之金屬材料之層厚只要為可確保良好之連接可靠性之厚度即可，且亦取決於樹脂粒子之粒徑或金屬之種類，但通常為0.1～3μm。
又，樹脂粒子之粒徑若過小則產生連接不良，若過大則有圖案間產生短路之傾向，故而較佳為1～20μm，更佳為3～10μm，進而特佳為3～5μm。於此情形時，樹脂粒子之形狀較佳為球形，但亦可為片狀、橄欖球狀。
金屬包覆樹脂粒子為球狀形狀，其粒徑若過大則有連接可靠性下降之傾向，因此較佳為1～20μm，更佳為3～10μm。
再者，能夠將如以上所說明之光反射性異向性導電接著劑所含有之導電粒子成為例如圖7A、圖7B之剖面圖所示之賦予光反射性之光反射性導電粒子。
圖7A所示之光反射性導電粒子100由以金屬材料包覆之核心粒子110、及於其表面上由選自氧化鈦(TiO2 )粒子、氧化鋅(ZnO)粒子或氧化鋁(Al2 O3 )粒子中之至少一種之無機粒子120所形成之光反射層130所構成。由此種無機粒子120所形成之光反射層130呈現白色至灰色之範圍內的某個顏色。因此，如上所述，可使針對可見光之反射特性之波長相依性變小，且易於反射可見光，可更加提高LED元件之發光效率。
再者，於氧化鈦粒子、氧化鋅粒子或氧化鋁粒子之中，於擔心硬化之光反射性異向性導電接著劑之熱固性樹脂組成物的硬化物光劣化之情形時，如上所述，可較佳使用對於光劣化無觸媒性，且折射率亦高之氧化鋅。
核心粒子110供於異向性導電連接，其表面以金屬材料所構成。核心粒子110之形態，例如可列舉核心粒子110本身為金屬材料之形態、或以金屬材料包覆樹脂粒子表面之形態。
由無機粒子120所形成之光反射層130之層厚，就與核心粒子110之粒徑相對之大小之觀點而言，針對核心粒子110之粒徑若過小則反射率之下降變得明顯，若過大則產生連接不良。因此，光反射層130之層厚較佳為0.5～50%，更佳為1～25%。
又，於光反射性導電粒子100中，構成光反射層130之無機粒子120之粒徑若過小則不易產生光反射現象，若過大則有光反射層之形成變得困難之傾向。因此，無機粒子120之粒徑較佳為0.02～4μm，更佳為0.1～1μm，特佳為0.2～0.5μm。於此情形時，就光反射之光之波長之觀點而言，無機粒子120之粒徑較佳為使應反射之光(即，發光元件發出之光)不透過為該光之波長之50%以上。於此情形時，無機粒子120之形狀，可列舉：非定型、球狀、鱗片狀、針狀等，其中，就光擴散效果方面而言較佳為球狀，就全反射效果方面而言較佳為鱗片狀之形狀。
光反射性導電粒子100可利用藉由使大小之粉末彼此物理性碰撞而於大粒徑粒子之表面形成由小粒子所構成之膜之公知的成膜技術(所謂之機械融合法)而製造。於此情形時，以陷入核心粒子110表面之金屬材料中的方式固定無機粒子120，另一方面，無機粒子彼此不易融合固定，故而無機粒子之單層構成光反射層130。因此可認為，於圖7A之情形時，光反射層130之層厚與無機粒子120之粒徑相等或者稍薄。
圖7B所示之光反射性導電粒子200，光反射層230含有作為接著劑而發揮作用之熱塑性樹脂240，藉由該熱塑性樹脂240使無機粒子220彼此固定，就無機粒子220多層化(例如2層或3層)方面而言，與圖7A之光反射性導電粒子100不同。藉由含有此種熱塑性樹脂240而提高光反射層230之機械強度，且無機粒子之剝落等不易產生。
熱塑性樹脂240，為達到低環境負荷而可較佳使用無鹵素型熱塑性樹脂，例如，可較佳使用聚乙烯、聚丙烯等聚烯烴、或聚苯乙烯、丙烯酸樹脂等。
此種光反射性導電粒子200亦可藉由機械熔融法而製造。機械熔融法所應用之熱塑性樹脂240之粒徑若過小則接著功能下降，若過大則不易附著於核心粒子210，故而較佳為0.02～4μm，更佳為0.1～1μm。又，此種熱塑性樹脂240之摻合量若過少則接著功能下降，若過多則形成粒子之凝聚體，故而相對於無機粒子220之100質量份，較佳為0.2～500質量份，更佳為4～25質量份。
光反射性異向性導電接著劑所含有之熱固性樹脂組成物，較佳為儘可能使用無色透明者。其原因在於光反射性異向性導電接著劑中之光反射性導電粒子之光反射效率不會下降，進而不會改變入射光之光色而使其反射。此處，所謂無色透明，意指光反射性異向性導電接著劑之硬化物對於波長380～780nm之可見光，光程長度1cm之透光率(JIS K7105)為80%以上，較佳為90%以上。
於光反射性異向性導電接著劑中，相對於熱固性樹脂組成物100質量份之光反射性導電粒子等導電粒子之摻合量若過少則產生連接不良，若過多則有圖案間產生短路之傾向，故而較佳為1～100質量份，更佳為10～50質量份。
光反射性異向性導電接著劑藉由於熱固性樹脂組成物中添加白色針狀無機粒子而使針對波長450nm之光之反射率(JIS K7105)成為比9%高之值。光反射性異向性導電接著劑之反射特性藉由適當調整其他各種因素，例如光反射性導電粒子之反射特性、或摻合量、熱固性樹脂組成物之摻合組成等，而實現針對波長450nm之光之反射率(JIS K7105)為30%以上。通常，只要增加反射特性良好之光反射性導電粒子之摻合量，則有反射率亦增大之傾向。
又，光反射性異向性導電接著劑之反射特性亦可就折射率之觀點進行評價。即，其原因在於若該硬化物之反射率較除去導電粒子與光反射性絕緣粒子的熱固性樹脂組成物之硬化物的折射率大，則於光反射性絕緣粒子與包圍其之熱固性樹脂組成物之硬化物之界面上的光反射量增大。具體而言，較理想的是：光反射性絕緣粒子之折射率(JIS K7142)減去熱固性樹脂組成物之硬化物之折射率(JIS K7142)的差較佳為0.02以上，更佳為0.2以上。再者，通常，以環氧樹脂為主體之熱固性樹脂組成物之折射率為約1.5。
熱固性樹脂組成物，可利用於先前之異向性導電接著劑中所使用者。一般而言，此種熱固性樹脂組成物係於絕緣性黏合劑樹脂中摻合硬化劑者。絕緣性黏合劑樹脂，較佳為可列舉以脂環環氧化合物、雜環系環氧化合物或氫化環氧化合物等為主成分之環氧系樹脂。
脂環環氧化合物，較佳可列舉於分子內具有兩個以上環氧基者。該等可為液狀亦可為固體狀。具體而言，可列舉環氧丙基六氫雙酚、環氧環己烯基甲基-環氧環己烯基羧酸酯等。其中，就可確保對硬化物之適合LED元件構裝等之透光性，且速硬化性亦優異之方面而言，可較佳使用環氧丙基六氫雙酚A、3,4-環氧環己烯基甲基-3',4'-環氧環己烯基羧酸酯。
雜環系環氧化合物，可列舉含有三環之環氧化合物，特佳可列舉1,3,5-三(2,3-環氧丙基)-1,3,5-三-2,4,6-(1H,3H,5H)-三酮。
氫化環氧化合物，可使用上述之脂環環氧化合物、或雜環系環氧化合物之氫化物或其他公知之氫化環氧樹脂。
脂環環氧化合物、或雜環系環氧化合物或氫化環氧化合物可單獨使用，亦可併用兩種以上。又，除該等之環氧化合物以外只要不損及本發明之效果，亦可併用其他環氧化合物。例如，可列舉使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲基雙酚A、四甲基雙酚F、三(羥基苯基)甲烷、聯二甲苯酚、苯酚酚醛、甲酚醛等多酚與表氯醇反應而獲得之環氧丙基醚；使甘油、新戊二醇、乙二醇、丙二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇反應而獲得之聚環氧丙基醚；使如對羥基苯甲酸、β-羥基萘甲酸之類的羥基羧酸與表氯醇反應而獲得之環氧丙基醚酯；自如鄰苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞甲基四氫鄰苯二甲酸、內亞甲基六氫鄰苯二甲酸、苯偏三酸、聚合脂肪酸之類的聚羧酸所獲得之聚環氧丙基脂；自胺基苯酚、胺基烷酚所獲得之環氧丙基胺基環氧丙基醚；自胺基苯甲酸所獲得之環氧丙基胺基環氧丙基脂；自苯胺、甲苯胺、三溴苯胺、苯二甲胺、二胺基環己烷、雙胺基甲基環己烷、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯基碸等所獲得之環氧丙基胺；及環氧化聚烯烴等公知之環氧樹脂類。
硬化劑可列舉：酸酐、咪唑化合物、二氰等。其中，可較佳使用使硬化物不易變色之酸酐，尤其是脂環酸酐系硬化劑。具體而言，可較佳列舉甲基六氫鄰苯二甲酸酐等。
於熱固性樹脂組成物中，於使用脂環環氧化合物與脂環酸酐系硬化劑之情形時，各自之使用量有如下傾向：若脂環酸酐系硬化劑過少則未硬化環氧化合物變多，若過多則由於剩餘之硬化劑之影響而促進被接著體材料之腐蝕，故而相對於脂環環氧化合物100質量份，將脂環酸酐系硬化劑以較佳為80～120質量份，更佳為95～105質量份之比例來使用。
光反射性異向性導電接著劑可藉由將熱固性樹脂組成物、導電粒子、及作為光反射性絕緣粒子之白色針狀無機粒子均勻地混合而製造。又，於製成光反射性異向性導電膜之情形時，只要將熱固性樹脂組成物、導電粒子、及作為光反射性絕緣粒子之白色針狀無機粒子與甲苯等溶劑一併分散混合，以成為預期厚度之方式塗佈於經剝離處理之PET膜，且以約80℃左右之溫度乾燥即可。
[實施例]
以下，藉由實施例具體地說明本發明。
<實施例1～6、比較例1～4>
(多晶片構裝用緩衝膜之製作)
於表1所示之耐熱性樹脂膜(耐熱性樹脂層)，藉由網版印刷法而塗佈表1之聚矽氧系樹脂組成物，於120℃乾燥1小時而形成柔軟性樹脂層，藉此製作多晶片構裝用緩衝膜。
再者，耐熱性樹脂膜及聚矽氧系樹脂組成物係使用以下之材料。
聚醯亞胺樹脂膜：Upilex-25S，宇部興產(股份有限公司)
聚酯樹脂膜：Teijin Tetoron Film，帝人(股份有限公司)
聚氯乙烯樹脂膜：Evilon CB3005，太平化學製品(股份有限公司)
聚烯烴樹脂膜：SAN8041，Tech jam(股份有限公司)
氟樹脂膜(聚四氟乙烯)：NITOFLON，日東電工(股份有限公司)
聚矽氧：KE-1281、X-32-2020，Shin-Etsu Silicones(股份有限公司)
聚矽氧：XE13-1822，MOMENTIVE公司
二甲基聚矽氧：KER-2600，Shin-Etsu Silicones(股份有限公司)
二甲基聚矽氧：KER-2500，Shin-Etsu Silicones(股份有限公司)
使用所製作之多晶片構裝用緩衝膜與以下所說明之光反射性異向性導電接著劑，以倒裝晶片方式於電路基板總括性地多晶片構裝複數個LED元件，對所得之多晶片模組之「連接可靠性」與「對準偏移」進行試驗評價。將所得之評價結果示於表1中。
<光反射性異向性導電接著劑之調製>
使白色針狀無機粒子與將球狀樹脂之表面鍍金處理之導電粒子(粒徑5μm)混合於由環氧硬化系接著劑(以CEL2021P-MeHHPA為主成分之接著性黏合劑)所構成之熱固性樹脂組成物中而製作光反射性異向性導電接著劑。白色針狀無機粒子之添加量相對於熱固性樹脂組成物為12.0體積%。作為白色針狀無機粒子，使用長方向粒徑1.7μm、短方向粒徑0.13μm(縱橫比13.1)之二氧化鈦(TiO2 )晶鬚。又，導電粒子之添加量相對於熱固性樹脂組成物為10質量%。
<多晶片模組之製作>
100μm間距之銅配線中具有經Ni/Au(5.0μm厚/0.3μm厚)鍍敷處理之配線，於能夠構裝20個LED元件之玻璃環氧基板，使用凸塊座(FB700，KAIJO(股份有限公司))而形成10μm高之金(Au)凸塊。於附有該金凸塊之玻璃環氧基板，以成為15μm厚之方式塗佈上述異向性導電接著劑，於其上搭載20個0.3mm見方之LED晶片元件，且預黏貼。使用包含金屬製之加熱加壓頭之倒裝晶片接合機，於該預黏貼之LED晶片元件與加熱加壓頭之間配置實施例或比較例之多晶片構裝用緩衝膜，於200℃正式加熱加壓30秒鐘，藉此獲得多晶片模組。
<連接可靠性評價>
首先，使用曲線描繪器(TCT-2004，國洋電機工業(股份有限公司))測定剛獲得之多晶片模組之連接電阻。將所得之結果示於表1中。繼而，對多晶片模組進行冷熱循環試驗(TCT：於-40℃及100℃之環境各暴露30分鐘，將其設為一個循環，將該冷熱循環實施500循環或1000循環)之後，再次測定連接電阻。將所得之結果示於表1中。
再者，連接可靠性之評價係測定If=20mA時之Vf值，根據以下之基準進行評價。再者，於以構裝時之晶片破損等確認短路(洩漏)之情形時以「*」表示，又，切斷(無法連接)之情形以「-」表示。
等級基準
AA：Vf值自初始Vf值之上升量未達±0.05V
A：Vf值自初始Vf值之上升量為±0.05V以上且未達±0.07V
B：Vf值自初始Vf值之上升量為±0.07V以上且未達±0.1V
C：Vf值自初始Vf值之上升量為±0.1V以上
＜對準偏移評價＞
使用顯微鏡觀察所得之多晶片模組之外觀，且觀察LED晶片元件與基板之凸塊之間的偏移，根據以下之基準進行評價。
等級基準
AA：於LED元件之電極與基板之凸塊之間完全無偏移之情形
A：於LED元件之電極與基板之凸塊之間觀察到一部分偏移，但在實際應用上無問題之情形
B：於LED元件之電極與基板之凸塊之間觀察到偏移，但獲得電性連接之情形
C：於LED元件之電極與基板之凸塊之間觀察到明顯的偏移，且完全無電性連接之情形
由表1可知，使用實施例1～6之多晶片構裝用緩衝膜製造之多晶片模組中，未觀察到LED晶片之對準偏移，又，初始及TCT1000循環後之連接可靠性亦良好。尤其，於實施例1之情形時，顯示出較其他實施例更良好之結果。
另一方面，使用比較例1之多晶片構裝用緩衝膜製造之多晶片模組中，雖未觀察到LED晶片之對準偏移，但不存在柔軟性樹脂層，因此於連接可靠性試驗之初始評價中觀察到洩漏，未獲得良好之連接可靠性。
使用比較例2之多晶片構裝用緩衝膜製造之多晶片模組中，雖未觀察到LED晶片之對準偏移，但柔軟性樹脂層相對較硬，因此連接可靠性有問題。
使用比較例3之多晶片構裝用緩衝膜製造之多晶片模組之情形時，緩衝膜之耐熱性樹脂層熱縮，觀察到LED晶片之對準偏移。並且初始連接可靠性良好，但於TCT500循環後Vf值明顯上升，進而於TCT1000循環後成為切斷。
使用比較例4之多晶片構裝用緩衝膜製造之多晶片模組之情形時，緩衝膜變形，LED晶片之對準完全偏移。
[產業上之可利用性]
本發明之多晶片構裝用緩衝膜具有於耐熱性樹脂層積層有柔軟性樹脂層之構成，耐熱性樹脂層應配置於晶片元件側，且不超出特定之線膨脹係數並且相對不易變形，柔軟性樹脂層應配置於接合頭側，且由表示特定之蕭氏A硬度之材料所構成並且相對容易變形。因此，於多晶片構裝中，利用接合頭加熱加壓緩衝膜時，鄰接晶片元件之耐熱性樹脂層不易變形，因此結果能夠抑制晶片元件之對準偏移。另一方面，鄰接接合頭之柔軟性樹脂層易於變形，故而可消除晶片元件之高度之差異或偏差，對複數個晶片元件分別進行良好之加熱加壓，確保良好之連接可靠性。因此，用於基板上總括性地構裝複數個晶片元件之多晶片構裝。
1．．．耐熱性樹脂層
2．．．柔軟性樹脂層
10．．．多晶片構裝用緩衝膜
21‧‧‧平台
22‧‧‧配線
23‧‧‧凸塊
24‧‧‧基板
25‧‧‧接著劑
26‧‧‧晶片元件
27‧‧‧接合頭
50‧‧‧多晶片模組
100、200‧‧‧光反射性導電粒子
110、210‧‧‧核心粒子
120、220‧‧‧無機粒子
130、230‧‧‧光反射層
240‧‧‧熱塑性樹脂
圖1係本發明之多晶片構裝用緩衝膜之概略剖面圖。
圖2係本發明之多晶片模組製造方法之說明圖。
圖3係以單片而應用多晶片構裝用緩衝膜之本發明之多晶片模組製造方法的說明圖。
圖4係以捲軸而應用多晶片構裝用緩衝膜之本發明之多晶片模組製造方法的說明圖。
圖5係本發明之多晶片模組製造方法之說明圖。
圖6係藉由本發明之多晶片模組製造方法而獲得之多晶片模組的概略剖面圖。
圖7A係光反射性異向性導電接著劑中所使用之光反射性導電粒子之概略剖面圖。
圖7B係光反射性異向性導電接著劑中所使用之光反射性導電粒子之概略剖面圖。
1．．．耐熱性樹脂層
2．．．柔軟性樹脂層
10．．．多晶片構裝用緩衝膜

Claims (9)

  1. 一種多晶片構裝用緩衝膜，其具有耐熱性樹脂層，及形成於其上之柔軟性樹脂層，耐熱性樹脂層具有80ppm/℃以下之線膨脹係數，柔軟性樹脂層由根據JIS-K6253之蕭氏A硬度為10~80的樹脂材料所形成。
  2. 如申請專利範圍第1項之多晶片構裝用緩衝膜，其中，耐熱性樹脂層為聚醯亞胺樹脂膜、聚酯樹脂膜、聚氯乙烯樹脂膜、聚烯烴樹脂膜或氟樹脂膜。
  3. 如申請專利範圍第1或2項之多晶片構裝用緩衝膜，其中，構成柔軟性樹脂層之樹脂材料為陰離子活性(anionic living)聚合性之聚矽氧樹脂組成物。
  4. 如申請專利範圍第1或2項之多晶片構裝用緩衝膜，其中，耐熱性樹脂層之層厚為200μm以下，柔軟性樹脂層之層厚為10μm以上。
  5. 一種多晶片模組之製造方法，該多晶片模組係藉由在基板上隔著接著劑利用接合頭加熱加壓複數個晶片元件來進行多晶片構裝而成，具有以下步驟(A)~(C)：步驟(A)將複數個晶片元件隔著接著劑對準且預黏貼於基板；步驟(B)於晶片元件與接合頭之間，以使該耐熱性樹脂層成為晶片元件側之方式配置申請專利範圍第1至4項中任一項之多晶片構裝用緩衝膜；步驟(C) 隔著多晶片構裝用緩衝膜，利用接合頭對基板加熱加壓，藉此連接複數個晶片元件。
  6. 如申請專利範圍第5項之多晶片模組之製造方法，其中，晶片元件為LED元件。
  7. 如申請專利範圍第5或6項之多晶片模組之製造方法，其中，多晶片構裝用緩衝膜以單片來應用。
  8. 如申請專利範圍第5或6項之多晶片模組之製造方法，其中，多晶片構裝用緩衝膜以捲軸(roll to roll)來應用。
  9. 如申請專利範圍第6項之多晶片模組之製造方法，其中，黏著劑為含有光反射性針狀絕緣粒子之異向性導電接著劑。
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