TWI511235B - 用於記憶體修復之適應性處理限制 - Google Patents

用於記憶體修復之適應性處理限制 Download PDF

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Publication number
TWI511235B
TWI511235B TW099138866A TW99138866A TWI511235B TW I511235 B TWI511235 B TW I511235B TW 099138866 A TW099138866 A TW 099138866A TW 99138866 A TW99138866 A TW 99138866A TW I511235 B TWI511235 B TW I511235B
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TW
Taiwan
Prior art keywords
processing
component
preset
recipe
work
Prior art date
Application number
TW099138866A
Other languages
English (en)
Chinese (zh)
Other versions
TW201140752A (en
Inventor
Daniel J Watson
Muir R Cohen
Original Assignee
Electro Scient Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scient Ind Inc filed Critical Electro Scient Ind Inc
Publication of TW201140752A publication Critical patent/TW201140752A/zh
Application granted granted Critical
Publication of TWI511235B publication Critical patent/TWI511235B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW099138866A 2009-12-23 2010-11-11 用於記憶體修復之適應性處理限制 TWI511235B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/646,402 US8461479B2 (en) 2009-12-23 2009-12-23 Adaptive processing constraints for memory repair

Publications (2)

Publication Number Publication Date
TW201140752A TW201140752A (en) 2011-11-16
TWI511235B true TWI511235B (zh) 2015-12-01

Family

ID=44149623

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099138866A TWI511235B (zh) 2009-12-23 2010-11-11 用於記憶體修復之適應性處理限制

Country Status (6)

Country Link
US (1) US8461479B2 (enExample)
JP (1) JP5628935B2 (enExample)
KR (1) KR101630492B1 (enExample)
CN (1) CN102687263B (enExample)
TW (1) TWI511235B (enExample)
WO (1) WO2011087551A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI511820B (zh) * 2013-12-02 2015-12-11 Ardentec Corp 雷射製程機台的參數載入方法
TWI606531B (zh) 2017-03-30 2017-11-21 義守大學 適用於三維晶片的缺陷測試方法及系統
CN111527348B (zh) * 2017-08-11 2023-03-07 布拉瓦家居公司 可配置的烹饪系统和方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808272A (en) * 1994-11-22 1998-09-15 Electro Scientific Industries, Inc. Laser system for functional trimming of films and devices
TW519654B (en) * 2000-02-09 2003-02-01 Infineon Technologies Ag Integrated semiconductor-memory with redundant units for memory-cells
TW525180B (en) * 2000-07-13 2003-03-21 Infineon Technologies Ag Integrated semiconductor-memory with memory-cells in several memory-cells-arrays and method to repair such a memory
US20030105547A1 (en) * 2000-12-15 2003-06-05 Haight Richard A. System and method for modifying enclosed areas for ion beam and laser beam bias effects
US20040031779A1 (en) * 2002-05-17 2004-02-19 Cahill Steven P. Method and system for calibrating a laser processing system and laser marking system utilizing same
TW579525B (en) * 2002-05-30 2004-03-11 Samsung Electronics Co Ltd Semiconductor memory device post-repair circuit and method
US20050282406A1 (en) * 2004-06-18 2005-12-22 Bruland Kelly J Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US20060006156A1 (en) * 2004-07-08 2006-01-12 Martin Huonker Laser welding method and apparatus
US20080284837A1 (en) * 2001-03-29 2008-11-20 Gsi Group Corporation Methods and systems for therma-based laser processing a multi-material device
US20080314879A1 (en) * 2007-06-25 2008-12-25 Electro Scientific Industries, Inc. Systems and methods for adapting parameters to increase throughput during laser-based wafer processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3774138B2 (ja) * 2000-11-13 2006-05-10 住友重機械工業株式会社 加工計画方法、装置、及び、加工方法、装置
JP2003266187A (ja) * 2002-03-12 2003-09-24 Sumitomo Heavy Ind Ltd 加工機の動作速度モデル化方法、装置、動作経路最適化方法、装置、及び、動作速度検定方法、装置
US7358157B2 (en) * 2002-03-27 2008-04-15 Gsi Group Corporation Method and system for high-speed precise laser trimming, scan lens system for use therein and electrical device produced thereby
JP4281292B2 (ja) * 2002-04-23 2009-06-17 パナソニック電工株式会社 ３次元レーザ加工データ作成方法と同データ作成プログラム及び同データ作成プログラムを記録した媒体並びに同加工方法及び装置
JP2004142082A (ja) * 2002-10-28 2004-05-20 Sumitomo Heavy Ind Ltd 加工計画方法及び装置
US7085296B2 (en) * 2003-12-05 2006-08-01 Branson Ultrasonics Corporation Dual parameter laser optical feedback
US8049135B2 (en) * 2004-06-18 2011-11-01 Electro Scientific Industries, Inc. Systems and methods for alignment of laser beam(s) for semiconductor link processing
JP5294629B2 (ja) * 2004-06-18 2013-09-18 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 複数のレーザビームスポットを使用する半導体構造加工

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808272A (en) * 1994-11-22 1998-09-15 Electro Scientific Industries, Inc. Laser system for functional trimming of films and devices
TW519654B (en) * 2000-02-09 2003-02-01 Infineon Technologies Ag Integrated semiconductor-memory with redundant units for memory-cells
TW525180B (en) * 2000-07-13 2003-03-21 Infineon Technologies Ag Integrated semiconductor-memory with memory-cells in several memory-cells-arrays and method to repair such a memory
US20030105547A1 (en) * 2000-12-15 2003-06-05 Haight Richard A. System and method for modifying enclosed areas for ion beam and laser beam bias effects
US20080284837A1 (en) * 2001-03-29 2008-11-20 Gsi Group Corporation Methods and systems for therma-based laser processing a multi-material device
US20040031779A1 (en) * 2002-05-17 2004-02-19 Cahill Steven P. Method and system for calibrating a laser processing system and laser marking system utilizing same
US20060054608A1 (en) * 2002-05-17 2006-03-16 Gsi Lumonics Corporation Method and system for calibrating a laser processing system and laser marking system utilizing same
TW579525B (en) * 2002-05-30 2004-03-11 Samsung Electronics Co Ltd Semiconductor memory device post-repair circuit and method
US20050282406A1 (en) * 2004-06-18 2005-12-22 Bruland Kelly J Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US20060006156A1 (en) * 2004-07-08 2006-01-12 Martin Huonker Laser welding method and apparatus
US20080314879A1 (en) * 2007-06-25 2008-12-25 Electro Scientific Industries, Inc. Systems and methods for adapting parameters to increase throughput during laser-based wafer processing

Also Published As

Publication number Publication date
US8461479B2 (en) 2013-06-11
TW201140752A (en) 2011-11-16
WO2011087551A1 (en) 2011-07-21
CN102687263B (zh) 2015-02-18
US20110147348A1 (en) 2011-06-23
KR20120110115A (ko) 2012-10-09
JP2013516067A (ja) 2013-05-09
KR101630492B1 (ko) 2016-06-24
JP5628935B2 (ja) 2014-11-19
CN102687263A (zh) 2012-09-19

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