KR101630492B1 - 메모리 수리에 대한 적응적 처리 제약 - Google Patents

메모리 수리에 대한 적응적 처리 제약 Download PDF

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Publication number
KR101630492B1
KR101630492B1 KR1020127018124A KR20127018124A KR101630492B1 KR 101630492 B1 KR101630492 B1 KR 101630492B1 KR 1020127018124 A KR1020127018124 A KR 1020127018124A KR 20127018124 A KR20127018124 A KR 20127018124A KR 101630492 B1 KR101630492 B1 KR 101630492B1
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KR
South Korea
Prior art keywords
recipe
processing
basic
laser
wafer
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Expired - Fee Related
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KR1020127018124A
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English (en)
Korean (ko)
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KR20120110115A (ko
Inventor
다니엘 제이 왓슨
뮤어 알 코헨
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일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드
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Publication of KR20120110115A publication Critical patent/KR20120110115A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020127018124A 2009-12-23 2010-10-29 메모리 수리에 대한 적응적 처리 제약 Expired - Fee Related KR101630492B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/646,402 US8461479B2 (en) 2009-12-23 2009-12-23 Adaptive processing constraints for memory repair
US12/646,402 2009-12-23

Publications (2)

Publication Number Publication Date
KR20120110115A KR20120110115A (ko) 2012-10-09
KR101630492B1 true KR101630492B1 (ko) 2016-06-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127018124A Expired - Fee Related KR101630492B1 (ko) 2009-12-23 2010-10-29 메모리 수리에 대한 적응적 처리 제약

Country Status (6)

Country Link
US (1) US8461479B2 (enExample)
JP (1) JP5628935B2 (enExample)
KR (1) KR101630492B1 (enExample)
CN (1) CN102687263B (enExample)
TW (1) TWI511235B (enExample)
WO (1) WO2011087551A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI511820B (zh) * 2013-12-02 2015-12-11 Ardentec Corp 雷射製程機台的參數載入方法
TWI606531B (zh) 2017-03-30 2017-11-21 義守大學 適用於三維晶片的缺陷測試方法及系統
CN111527348B (zh) * 2017-08-11 2023-03-07 布拉瓦家居公司 可配置的烹饪系统和方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003131714A (ja) 2000-11-13 2003-05-09 Sumitomo Heavy Ind Ltd 加工計画方法、装置、及び、そのための加工データ作成方法、装置
JP2003266187A (ja) 2002-03-12 2003-09-24 Sumitomo Heavy Ind Ltd 加工機の動作速度モデル化方法、装置、動作経路最適化方法、装置、及び、動作速度検定方法、装置
JP2004142082A (ja) 2002-10-28 2004-05-20 Sumitomo Heavy Ind Ltd 加工計画方法及び装置
WO2009002364A1 (en) * 2007-06-25 2008-12-31 Electro Scientific Industries, Inc. Systems and methods for adapting parameters to increase throughput during laser-based wafer processing

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Publication number Priority date Publication date Assignee Title
US5685995A (en) * 1994-11-22 1997-11-11 Electro Scientific Industries, Inc. Method for laser functional trimming of films and devices
US8217304B2 (en) 2001-03-29 2012-07-10 Gsi Group Corporation Methods and systems for thermal-based laser processing a multi-material device
DE10005618A1 (de) * 2000-02-09 2001-08-30 Infineon Technologies Ag Integrierter Halbleiterspeicher mit redundanter Einheit von Speicherzellen
DE10034062A1 (de) * 2000-07-13 2002-01-24 Infineon Technologies Ag Integrierter Halbleiterspeicher mit Speicherzellen in mehre-ren Speicherzellenfeldern und Verfahren zur Reparatur eines solchen Speichers
US6591154B2 (en) 2000-12-15 2003-07-08 International Business Machines Corporation System and method for modifying enclosed areas for ion beam and laser beam bias effects
US7358157B2 (en) * 2002-03-27 2008-04-15 Gsi Group Corporation Method and system for high-speed precise laser trimming, scan lens system for use therein and electrical device produced thereby
JP4281292B2 (ja) * 2002-04-23 2009-06-17 パナソニック電工株式会社 ３次元レーザ加工データ作成方法と同データ作成プログラム及び同データ作成プログラムを記録した媒体並びに同加工方法及び装置
US7119351B2 (en) * 2002-05-17 2006-10-10 Gsi Group Corporation Method and system for machine vision-based feature detection and mark verification in a workpiece or wafer marking system
TW579525B (en) * 2002-05-30 2004-03-11 Samsung Electronics Co Ltd Semiconductor memory device post-repair circuit and method
US7085296B2 (en) * 2003-12-05 2006-08-01 Branson Ultrasonics Corporation Dual parameter laser optical feedback
US8049135B2 (en) * 2004-06-18 2011-11-01 Electro Scientific Industries, Inc. Systems and methods for alignment of laser beam(s) for semiconductor link processing
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
JP5294629B2 (ja) * 2004-06-18 2013-09-18 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 複数のレーザビームスポットを使用する半導体構造加工
DE502004001425D1 (de) 2004-07-08 2006-10-19 Trumpf Laser Gmbh & Co Kg Laserschweissverfahren und -vorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003131714A (ja) 2000-11-13 2003-05-09 Sumitomo Heavy Ind Ltd 加工計画方法、装置、及び、そのための加工データ作成方法、装置
JP2003266187A (ja) 2002-03-12 2003-09-24 Sumitomo Heavy Ind Ltd 加工機の動作速度モデル化方法、装置、動作経路最適化方法、装置、及び、動作速度検定方法、装置
JP2004142082A (ja) 2002-10-28 2004-05-20 Sumitomo Heavy Ind Ltd 加工計画方法及び装置
WO2009002364A1 (en) * 2007-06-25 2008-12-31 Electro Scientific Industries, Inc. Systems and methods for adapting parameters to increase throughput during laser-based wafer processing

Also Published As

Publication number Publication date
US8461479B2 (en) 2013-06-11
TW201140752A (en) 2011-11-16
WO2011087551A1 (en) 2011-07-21
CN102687263B (zh) 2015-02-18
US20110147348A1 (en) 2011-06-23
KR20120110115A (ko) 2012-10-09
JP2013516067A (ja) 2013-05-09
TWI511235B (zh) 2015-12-01
JP5628935B2 (ja) 2014-11-19
CN102687263A (zh) 2012-09-19

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