TWI508633B - Inductively coupled plasma processing device, plasma processing method and memory medium - Google Patents

Inductively coupled plasma processing device, plasma processing method and memory medium Download PDF

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Publication number
TWI508633B
TWI508633B TW098135948A TW98135948A TWI508633B TW I508633 B TWI508633 B TW I508633B TW 098135948 A TW098135948 A TW 098135948A TW 98135948 A TW98135948 A TW 98135948A TW I508633 B TWI508633 B TW I508633B
Authority
TW
Taiwan
Prior art keywords
antenna
circuit
processing chamber
impedance
antenna circuit
Prior art date
Application number
TW098135948A
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English (en)
Chinese (zh)
Other versions
TW201026166A (en
Inventor
Kazuo Sasaki
Hitoshi Saito
Ryo Sato
Original Assignee
Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201026166A publication Critical patent/TW201026166A/zh
Application granted granted Critical
Publication of TWI508633B publication Critical patent/TWI508633B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW098135948A 2008-10-27 2009-10-23 Inductively coupled plasma processing device, plasma processing method and memory medium TWI508633B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008275580 2008-10-27
JP2009165598A JP5399151B2 (ja) 2008-10-27 2009-07-14 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
TW201026166A TW201026166A (en) 2010-07-01
TWI508633B true TWI508633B (zh) 2015-11-11

Family

ID=42346367

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098135948A TWI508633B (zh) 2008-10-27 2009-10-23 Inductively coupled plasma processing device, plasma processing method and memory medium

Country Status (4)

Country Link
JP (2) JP5399151B2 (enrdf_load_stackoverflow)
KR (1) KR20110089116A (enrdf_load_stackoverflow)
CN (1) CN101730375B (enrdf_load_stackoverflow)
TW (1) TWI508633B (enrdf_load_stackoverflow)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110097901A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
JP5595136B2 (ja) * 2010-06-18 2014-09-24 三菱重工業株式会社 誘導結合プラズマ発生装置
JP5851682B2 (ja) * 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
JP2013077715A (ja) * 2011-09-30 2013-04-25 Tokyo Electron Ltd 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
JP2013105664A (ja) * 2011-11-15 2013-05-30 Tokyo Electron Ltd 高周波アンテナ回路及び誘導結合プラズマ処理装置
JP5894785B2 (ja) * 2011-12-19 2016-03-30 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
JP5878771B2 (ja) * 2012-02-07 2016-03-08 東京エレクトロン株式会社 誘導結合プラズマ処理方法および誘導結合プラズマ処理装置
KR20140059422A (ko) * 2012-11-08 2014-05-16 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
KR20140066483A (ko) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
KR20140089458A (ko) * 2013-01-04 2014-07-15 피에스케이 주식회사 플라즈마 챔버 및 기판 처리 장치
CN106601579B (zh) * 2015-10-19 2019-02-19 北京北方华创微电子装备有限公司 上电极机构及半导体加工设备
KR101939661B1 (ko) * 2017-08-22 2019-01-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR101986744B1 (ko) * 2017-09-27 2019-06-07 주식회사 유진테크 플라즈마 처리 장치 및 방법
KR101972783B1 (ko) * 2017-10-13 2019-08-16 주식회사 유진테크 Icp 안테나 및 이를 포함하는 플라즈마 처리 장치
JP7139181B2 (ja) 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
US11515122B2 (en) * 2019-03-19 2022-11-29 Tokyo Electron Limited System and methods for VHF plasma processing
KR102081686B1 (ko) * 2019-05-16 2020-02-26 주식회사 유진테크 플라즈마를 이용한 기판 처리 방법
CN113496862B (zh) * 2020-04-02 2024-09-06 中微半导体设备(上海)股份有限公司 等离子体反应器及其射频功率分布调节方法
CN111430211A (zh) * 2020-04-02 2020-07-17 上海理想万里晖薄膜设备有限公司 用于等离子体处理设备的射频系统及其调节方法
JP7650834B2 (ja) 2022-02-16 2025-03-25 東京エレクトロン株式会社 プラズマ処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW447226B (en) * 1999-08-26 2001-07-21 Jusung Eng Co Ltd Antenna device for generating inductively coupled plasma
TW510149B (en) * 1998-06-30 2002-11-11 Lam Res Corp Multiple coil antenna for inductively coupled plasma-generation systems
CN1498057A (zh) * 2002-10-15 2004-05-19 ���ǵ�����ʽ���� 包含有曲折线圈天线的感应耦合等离子体发生设备
TWI276372B (en) * 2001-03-30 2007-03-11 Lam Res Corp Inductive plasma processor having coil with plural windings and method of controlling plasma density

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3077009B2 (ja) * 1993-03-27 2000-08-14 東京エレクトロン株式会社 プラズマ処理装置
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
JPH11152576A (ja) * 1997-11-17 1999-06-08 Sony Corp プラズマｃｖｄ装置及び薄膜成膜方法
JP4852189B2 (ja) * 1999-03-09 2012-01-11 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP4042363B2 (ja) * 2001-07-23 2008-02-06 株式会社日立国際電気 プラズマ生成用の螺旋共振装置
KR100486712B1 (ko) * 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
JP2006216903A (ja) * 2005-02-07 2006-08-17 Hitachi High-Technologies Corp プラズマ処理装置
JP2007311182A (ja) * 2006-05-18 2007-11-29 Tokyo Electron Ltd 誘導結合プラズマ処理装置およびプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW510149B (en) * 1998-06-30 2002-11-11 Lam Res Corp Multiple coil antenna for inductively coupled plasma-generation systems
TW447226B (en) * 1999-08-26 2001-07-21 Jusung Eng Co Ltd Antenna device for generating inductively coupled plasma
TWI276372B (en) * 2001-03-30 2007-03-11 Lam Res Corp Inductive plasma processor having coil with plural windings and method of controlling plasma density
CN1498057A (zh) * 2002-10-15 2004-05-19 ���ǵ�����ʽ���� 包含有曲折线圈天线的感应耦合等离子体发生设备

Also Published As

Publication number Publication date
CN101730375B (zh) 2015-09-02
JP5399151B2 (ja) 2014-01-29
KR20110089116A (ko) 2011-08-04
CN101730375A (zh) 2010-06-09
JP2013201134A (ja) 2013-10-03
JP5566498B2 (ja) 2014-08-06
JP2010135298A (ja) 2010-06-17
TW201026166A (en) 2010-07-01

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