KR20110089116A - 유도 결합 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents
유도 결합 플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDFInfo
- Publication number
- KR20110089116A KR20110089116A KR1020110062799A KR20110062799A KR20110089116A KR 20110089116 A KR20110089116 A KR 20110089116A KR 1020110062799 A KR1020110062799 A KR 1020110062799A KR 20110062799 A KR20110062799 A KR 20110062799A KR 20110089116 A KR20110089116 A KR 20110089116A
- Authority
- KR
- South Korea
- Prior art keywords
- circuit
- antenna circuit
- antenna
- inductively coupled
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000009832 plasma treatment Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 230000006698 induction Effects 0.000 claims abstract description 16
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 96
- 238000009826 distribution Methods 0.000 claims description 34
- 238000003672 processing method Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 abstract description 36
- 239000012071 phase Substances 0.000 description 48
- 238000010586 diagram Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 13
- 238000004380 ashing Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 230000001939 inductive effect Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000008384 inner phase Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000008385 outer phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008275580 | 2008-10-27 | ||
JPJP-P-2008-275580 | 2008-10-27 | ||
JPJP-P-2009-165598 | 2009-07-14 | ||
JP2009165598A JP5399151B2 (ja) | 2008-10-27 | 2009-07-14 | 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090102183A Division KR101143742B1 (ko) | 2008-10-27 | 2009-10-27 | 유도 결합 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110089116A true KR20110089116A (ko) | 2011-08-04 |
Family
ID=42346367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110062799A Withdrawn KR20110089116A (ko) | 2008-10-27 | 2011-06-28 | 유도 결합 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP5399151B2 (enrdf_load_stackoverflow) |
KR (1) | KR20110089116A (enrdf_load_stackoverflow) |
CN (1) | CN101730375B (enrdf_load_stackoverflow) |
TW (1) | TWI508633B (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101939661B1 (ko) * | 2017-08-22 | 2019-01-18 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110097901A1 (en) * | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
JP5595136B2 (ja) * | 2010-06-18 | 2014-09-24 | 三菱重工業株式会社 | 誘導結合プラズマ発生装置 |
JP5851682B2 (ja) * | 2010-09-28 | 2016-02-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5916044B2 (ja) * | 2010-09-28 | 2016-05-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5723130B2 (ja) * | 2010-09-28 | 2015-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5800532B2 (ja) * | 2011-03-03 | 2015-10-28 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5800547B2 (ja) * | 2011-03-29 | 2015-10-28 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5781349B2 (ja) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2013077715A (ja) * | 2011-09-30 | 2013-04-25 | Tokyo Electron Ltd | 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置 |
JP2013105664A (ja) * | 2011-11-15 | 2013-05-30 | Tokyo Electron Ltd | 高周波アンテナ回路及び誘導結合プラズマ処理装置 |
JP5894785B2 (ja) * | 2011-12-19 | 2016-03-30 | 東京エレクトロン株式会社 | 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置 |
JP5878771B2 (ja) * | 2012-02-07 | 2016-03-08 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理方法および誘導結合プラズマ処理装置 |
KR20140059422A (ko) * | 2012-11-08 | 2014-05-16 | 엘아이지에이디피 주식회사 | 유도 결합 플라즈마 처리 장치 및 그 제어방법 |
KR20140066483A (ko) * | 2012-11-23 | 2014-06-02 | 엘아이지에이디피 주식회사 | 유도 결합 플라즈마 처리 장치 및 그 제어방법 |
KR20140089458A (ko) * | 2013-01-04 | 2014-07-15 | 피에스케이 주식회사 | 플라즈마 챔버 및 기판 처리 장치 |
CN106601579B (zh) * | 2015-10-19 | 2019-02-19 | 北京北方华创微电子装备有限公司 | 上电极机构及半导体加工设备 |
KR101986744B1 (ko) * | 2017-09-27 | 2019-06-07 | 주식회사 유진테크 | 플라즈마 처리 장치 및 방법 |
KR101972783B1 (ko) * | 2017-10-13 | 2019-08-16 | 주식회사 유진테크 | Icp 안테나 및 이를 포함하는 플라즈마 처리 장치 |
JP7139181B2 (ja) | 2018-07-26 | 2022-09-20 | ワイエイシイテクノロジーズ株式会社 | プラズマ処理装置 |
US11515122B2 (en) * | 2019-03-19 | 2022-11-29 | Tokyo Electron Limited | System and methods for VHF plasma processing |
KR102081686B1 (ko) * | 2019-05-16 | 2020-02-26 | 주식회사 유진테크 | 플라즈마를 이용한 기판 처리 방법 |
CN113496862B (zh) * | 2020-04-02 | 2024-09-06 | 中微半导体设备(上海)股份有限公司 | 等离子体反应器及其射频功率分布调节方法 |
CN111430211A (zh) * | 2020-04-02 | 2020-07-17 | 上海理想万里晖薄膜设备有限公司 | 用于等离子体处理设备的射频系统及其调节方法 |
JP7650834B2 (ja) | 2022-02-16 | 2025-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3077009B2 (ja) * | 1993-03-27 | 2000-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH0982495A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
JPH11152576A (ja) * | 1997-11-17 | 1999-06-08 | Sony Corp | プラズマcvd装置及び薄膜成膜方法 |
US6164241A (en) * | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
JP4852189B2 (ja) * | 1999-03-09 | 2012-01-11 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
KR100338057B1 (ko) * | 1999-08-26 | 2002-05-24 | 황 철 주 | 유도 결합형 플라즈마 발생용 안테나 장치 |
US7096819B2 (en) * | 2001-03-30 | 2006-08-29 | Lam Research Corporation | Inductive plasma processor having coil with plural windings and method of controlling plasma density |
JP4042363B2 (ja) * | 2001-07-23 | 2008-02-06 | 株式会社日立国際電気 | プラズマ生成用の螺旋共振装置 |
KR100486712B1 (ko) * | 2002-09-04 | 2005-05-03 | 삼성전자주식회사 | 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
KR100486724B1 (ko) * | 2002-10-15 | 2005-05-03 | 삼성전자주식회사 | 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
JP2006216903A (ja) * | 2005-02-07 | 2006-08-17 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2007311182A (ja) * | 2006-05-18 | 2007-11-29 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置およびプラズマ処理方法 |
-
2009
- 2009-07-14 JP JP2009165598A patent/JP5399151B2/ja active Active
- 2009-10-23 TW TW098135948A patent/TWI508633B/zh not_active IP Right Cessation
- 2009-10-27 CN CN200910207040.2A patent/CN101730375B/zh active Active
-
2011
- 2011-06-28 KR KR1020110062799A patent/KR20110089116A/ko not_active Withdrawn
-
2013
- 2013-04-26 JP JP2013094410A patent/JP5566498B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101939661B1 (ko) * | 2017-08-22 | 2019-01-18 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN101730375B (zh) | 2015-09-02 |
JP5399151B2 (ja) | 2014-01-29 |
CN101730375A (zh) | 2010-06-09 |
JP2013201134A (ja) | 2013-10-03 |
JP5566498B2 (ja) | 2014-08-06 |
TWI508633B (zh) | 2015-11-11 |
JP2010135298A (ja) | 2010-06-17 |
TW201026166A (en) | 2010-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
PA0107 | Divisional application |
Comment text: Divisional Application of Patent Patent event date: 20110628 Patent event code: PA01071R01D |
|
PG1501 | Laying open of application | ||
PC1203 | Withdrawal of no request for examination | ||
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |