TWI505364B - 硬遮罩材料 - Google Patents

硬遮罩材料 Download PDF

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Publication number
TWI505364B
TWI505364B TW099140866A TW99140866A TWI505364B TW I505364 B TWI505364 B TW I505364B TW 099140866 A TW099140866 A TW 099140866A TW 99140866 A TW99140866 A TW 99140866A TW I505364 B TWI505364 B TW I505364B
Authority
TW
Taiwan
Prior art keywords
hard mask
film
layer
plasma
mpa
Prior art date
Application number
TW099140866A
Other languages
English (en)
Chinese (zh)
Other versions
TW201130050A (en
Inventor
Vishwanathan Rangarajan
George Andrew Antonelli
Ananda Banerji
Schravendijk Bart Van
Original Assignee
Novellus Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/631,691 external-priority patent/US8247332B2/en
Priority claimed from US12/631,709 external-priority patent/US8178443B2/en
Application filed by Novellus Systems Inc filed Critical Novellus Systems Inc
Publication of TW201130050A publication Critical patent/TW201130050A/zh
Application granted granted Critical
Publication of TWI505364B publication Critical patent/TWI505364B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099140866A 2009-12-04 2010-11-25 硬遮罩材料 TWI505364B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/631,691 US8247332B2 (en) 2009-12-04 2009-12-04 Hardmask materials
US12/631,709 US8178443B2 (en) 2009-12-04 2009-12-04 Hardmask materials

Publications (2)

Publication Number Publication Date
TW201130050A TW201130050A (en) 2011-09-01
TWI505364B true TWI505364B (zh) 2015-10-21

Family

ID=44130378

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料
TW099140866A TWI505364B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Country Status (4)

Country Link
JP (1) JP5656010B2 (ko)
KR (2) KR101798235B1 (ko)
CN (2) CN102097364B (ko)
TW (2) TWI547997B (ko)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5723243B2 (ja) * 2011-08-11 2015-05-27 東京エレクトロン株式会社 成膜方法、これを含む半導体装置の製造方法、成膜装置、及び半導体装置
CN103258779B (zh) * 2012-02-17 2015-05-20 中芯国际集成电路制造(上海)有限公司 铜互连结构及其制造方法
JP5860734B2 (ja) * 2012-03-13 2016-02-16 株式会社ライテック研究所 硬質皮膜被覆部材およびその製造方法
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2014078579A (ja) * 2012-10-10 2014-05-01 Renesas Electronics Corp 半導体装置の製造方法
KR102178326B1 (ko) * 2012-12-18 2020-11-13 램 리써치 코포레이션 산소-함유 세라믹 하드 마스크들 및 관련 습식-세정들
JP6111097B2 (ja) * 2013-03-12 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US20150024152A1 (en) 2013-07-19 2015-01-22 Agilent Technologies, Inc. Metal components with inert vapor phase coating on internal surfaces
US10767259B2 (en) 2013-07-19 2020-09-08 Agilent Technologies, Inc. Components with an atomic layer deposition coating and methods of producing the same
CN104947085B (zh) * 2014-03-31 2017-12-19 中芯国际集成电路制造(上海)有限公司 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US10535558B2 (en) 2016-02-09 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trenches
JP6473269B2 (ja) * 2016-02-29 2019-02-20 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US9870915B1 (en) * 2016-10-01 2018-01-16 Applied Materials, Inc. Chemical modification of hardmask films for enhanced etching and selective removal
CN108220922B (zh) 2016-12-15 2020-12-29 东京毅力科创株式会社 成膜方法、硼膜以及成膜装置
US9837270B1 (en) * 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
JP6914143B2 (ja) * 2016-12-26 2021-08-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法
KR102020211B1 (ko) * 2017-01-09 2019-11-04 주식회사 테스 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
JP6914107B2 (ja) * 2017-06-05 2021-08-04 東京エレクトロン株式会社 ボロン膜の除去方法
CN107742607B (zh) * 2017-08-31 2021-05-11 重庆中科渝芯电子有限公司 一种用icp干法刻蚀制作薄膜电阻的方法
US10474027B2 (en) * 2017-11-13 2019-11-12 Macronix International Co., Ltd. Method for forming an aligned mask
JP7049883B2 (ja) * 2018-03-28 2022-04-07 東京エレクトロン株式会社 ボロン系膜の成膜方法および成膜装置
GB201813467D0 (en) * 2018-08-17 2018-10-03 Spts Technologies Ltd Method of depositing silicon nitride
KR20220056249A (ko) 2018-10-19 2022-05-04 램 리써치 코포레이션 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출
TW202111147A (zh) * 2019-08-12 2021-03-16 美商應用材料股份有限公司 低k介電膜
US11508573B2 (en) * 2019-12-31 2022-11-22 Micron Technology, Inc. Plasma doping of gap fill materials
US11676813B2 (en) 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
CN114664649B (zh) * 2022-05-19 2022-09-20 浙江大学杭州国际科创中心 碳化硅高深宽比槽刻蚀工艺优化方法
CN115241126B (zh) * 2022-09-21 2022-12-30 广州粤芯半导体技术有限公司 通孔刻蚀方法以及金属互连结构的制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200405437A (en) * 2002-09-27 2004-04-01 Advanced Micro Devices Inc Hardmask employing multiple layers of silicon oxynitride
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US20060040507A1 (en) * 2004-08-17 2006-02-23 Mak Cecilia Y Method for depositing porous films
TW200803988A (en) * 2006-03-31 2008-01-16 Exxonmobil Res & Eng Co Improved FCC catalyst stripper configuration
TW200908138A (en) * 2007-05-03 2009-02-16 Lam Res Corp Hardmask open and etch profile control with hardmask open

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA868641A (en) * 1971-04-13 L. Cuomo Jerome Method for etching silicon nitride films with sharp edge definition
US4895789A (en) * 1988-03-29 1990-01-23 Seiko Instruments Inc. Method of manufacturing non-linear resistive element array
KR100219550B1 (ko) * 1996-08-21 1999-09-01 윤종용 반사방지막 및 이를 이용한 패턴형성방법
JP3430091B2 (ja) * 1999-12-01 2003-07-28 Ｎｅｃエレクトロニクス株式会社 エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
US6794311B2 (en) * 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
US7238393B2 (en) * 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
DE602004026635D1 (de) * 2003-12-26 2010-05-27 Nissan Chemical Ind Ltd Zusammensetzung zur bildung eines nitridbeschichtungsfilms für eine hartmaske
TW200631095A (en) * 2005-01-27 2006-09-01 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP4837370B2 (ja) * 2005-12-05 2011-12-14 東京エレクトロン株式会社 成膜方法
WO2007075369A1 (en) * 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
WO2007116492A1 (ja) * 2006-03-31 2007-10-18 Fujitsu Microelectronics Limited 半導体装置の製造方法
US7528078B2 (en) * 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
US7550758B2 (en) * 2006-10-31 2009-06-23 Atmel Corporation Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
TW200405437A (en) * 2002-09-27 2004-04-01 Advanced Micro Devices Inc Hardmask employing multiple layers of silicon oxynitride
US20060040507A1 (en) * 2004-08-17 2006-02-23 Mak Cecilia Y Method for depositing porous films
TW200803988A (en) * 2006-03-31 2008-01-16 Exxonmobil Res & Eng Co Improved FCC catalyst stripper configuration
TW200908138A (en) * 2007-05-03 2009-02-16 Lam Res Corp Hardmask open and etch profile control with hardmask open

Also Published As

Publication number Publication date
CN105185707B (zh) 2018-06-01
CN105185707A (zh) 2015-12-23
TW201543574A (zh) 2015-11-16
KR20170126827A (ko) 2017-11-20
CN102097364A (zh) 2011-06-15
KR101907802B1 (ko) 2018-12-05
JP2011139033A (ja) 2011-07-14
TW201130050A (en) 2011-09-01
TWI547997B (zh) 2016-09-01
CN102097364B (zh) 2015-10-14
KR20110063386A (ko) 2011-06-10
KR101798235B1 (ko) 2017-11-15
JP5656010B2 (ja) 2015-01-21

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