TWI505364B - 硬遮罩材料 - Google Patents

硬遮罩材料 Download PDF

Info

Publication number
TWI505364B
TWI505364B TW099140866A TW99140866A TWI505364B TW I505364 B TWI505364 B TW I505364B TW 099140866 A TW099140866 A TW 099140866A TW 99140866 A TW99140866 A TW 99140866A TW I505364 B TWI505364 B TW I505364B
Authority
TW
Taiwan
Prior art keywords
hard mask
film
layer
plasma
mpa
Prior art date
Application number
TW099140866A
Other languages
English (en)
Chinese (zh)
Other versions
TW201130050A (en
Inventor
維許瓦納森 雷家拉健
喬治 安德魯 安東尼力
亞那達 班尼吉
史拉文德克 巴特 凡
Original Assignee
諾菲勒斯系統公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/631,691 external-priority patent/US8247332B2/en
Priority claimed from US12/631,709 external-priority patent/US8178443B2/en
Application filed by 諾菲勒斯系統公司 filed Critical 諾菲勒斯系統公司
Publication of TW201130050A publication Critical patent/TW201130050A/zh
Application granted granted Critical
Publication of TWI505364B publication Critical patent/TWI505364B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/088—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving partial etching of via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
TW099140866A 2009-12-04 2010-11-25 硬遮罩材料 TWI505364B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/631,691 US8247332B2 (en) 2009-12-04 2009-12-04 Hardmask materials
US12/631,709 US8178443B2 (en) 2009-12-04 2009-12-04 Hardmask materials

Publications (2)

Publication Number Publication Date
TW201130050A TW201130050A (en) 2011-09-01
TWI505364B true TWI505364B (zh) 2015-10-21

Family

ID=44130378

Family Applications (2)

Application Number Title Priority Date Filing Date
TW099140866A TWI505364B (zh) 2009-12-04 2010-11-25 硬遮罩材料
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Country Status (4)

Country Link
JP (1) JP5656010B2 (https=)
KR (2) KR101798235B1 (https=)
CN (2) CN105185707B (https=)
TW (2) TWI505364B (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5723243B2 (ja) * 2011-08-11 2015-05-27 東京エレクトロン株式会社 成膜方法、これを含む半導体装置の製造方法、成膜装置、及び半導体装置
CN103258779B (zh) * 2012-02-17 2015-05-20 中芯国际集成电路制造(上海)有限公司 铜互连结构及其制造方法
JP5860734B2 (ja) * 2012-03-13 2016-02-16 株式会社ライテック研究所 硬質皮膜被覆部材およびその製造方法
US20180347035A1 (en) 2012-06-12 2018-12-06 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2014078579A (ja) * 2012-10-10 2014-05-01 Renesas Electronics Corp 半導体装置の製造方法
KR102178326B1 (ko) * 2012-12-18 2020-11-13 램 리써치 코포레이션 산소-함유 세라믹 하드 마스크들 및 관련 습식-세정들
JP6111097B2 (ja) * 2013-03-12 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US20150024152A1 (en) 2013-07-19 2015-01-22 Agilent Technologies, Inc. Metal components with inert vapor phase coating on internal surfaces
US10767259B2 (en) 2013-07-19 2020-09-08 Agilent Technologies, Inc. Components with an atomic layer deposition coating and methods of producing the same
CN104947085B (zh) * 2014-03-31 2017-12-19 中芯国际集成电路制造(上海)有限公司 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US10535558B2 (en) 2016-02-09 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trenches
CN108475624B (zh) 2016-02-29 2023-10-20 株式会社国际电气 半导体器件的制造方法、衬底处理装置以及记录介质
US9870915B1 (en) * 2016-10-01 2018-01-16 Applied Materials, Inc. Chemical modification of hardmask films for enhanced etching and selective removal
US10388524B2 (en) 2016-12-15 2019-08-20 Tokyo Electron Limited Film forming method, boron film, and film forming apparatus
US9837270B1 (en) * 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
JP6914143B2 (ja) * 2016-12-26 2021-08-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法
KR102020211B1 (ko) * 2017-01-09 2019-11-04 주식회사 테스 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법
JP7229929B2 (ja) * 2017-02-01 2023-02-28 アプライド マテリアルズ インコーポレイテッド ハードマスク応用向けのホウ素がドープされた炭化タングステン
JP6914107B2 (ja) * 2017-06-05 2021-08-04 東京エレクトロン株式会社 ボロン膜の除去方法
CN107742607B (zh) * 2017-08-31 2021-05-11 重庆中科渝芯电子有限公司 一种用icp干法刻蚀制作薄膜电阻的方法
US10474027B2 (en) * 2017-11-13 2019-11-12 Macronix International Co., Ltd. Method for forming an aligned mask
JP7049883B2 (ja) * 2018-03-28 2022-04-07 東京エレクトロン株式会社 ボロン系膜の成膜方法および成膜装置
GB201813467D0 (en) * 2018-08-17 2018-10-03 Spts Technologies Ltd Method of depositing silicon nitride
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
TWI853993B (zh) * 2019-08-12 2024-09-01 美商應用材料股份有限公司 低k介電膜
US11276573B2 (en) * 2019-12-04 2022-03-15 Applied Materials, Inc. Methods of forming high boron-content hard mask materials
US11508573B2 (en) 2019-12-31 2022-11-22 Micron Technology, Inc. Plasma doping of gap fill materials
KR20220146578A (ko) * 2020-02-24 2022-11-01 램 리써치 코포레이션 반도체 애플리케이션들을 위한 고 모듈러스 (modulus) 붕소-기반 세라믹스
US11404263B2 (en) * 2020-08-07 2022-08-02 Applied Materials, Inc. Deposition of low-stress carbon-containing layers
US11676813B2 (en) 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
US11961739B2 (en) * 2020-10-05 2024-04-16 Applied Materials, Inc. Boron concentration tunability in boron-silicon films
CN114664649B (zh) * 2022-05-19 2022-09-20 浙江大学杭州国际科创中心 碳化硅高深宽比槽刻蚀工艺优化方法
CN115241126B (zh) * 2022-09-21 2022-12-30 广州粤芯半导体技术有限公司 通孔刻蚀方法以及金属互连结构的制作方法
JP2025133138A (ja) * 2024-03-01 2025-09-11 東京エレクトロン株式会社 成膜方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200405437A (en) * 2002-09-27 2004-04-01 Advanced Micro Devices Inc Hardmask employing multiple layers of silicon oxynitride
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US20060040507A1 (en) * 2004-08-17 2006-02-23 Mak Cecilia Y Method for depositing porous films
TW200803988A (en) * 2006-03-31 2008-01-16 Exxonmobil Res & Eng Co Improved FCC catalyst stripper configuration
TW200908138A (en) * 2007-05-03 2009-02-16 Lam Res Corp Hardmask open and etch profile control with hardmask open

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA868641A (en) * 1971-04-13 L. Cuomo Jerome Method for etching silicon nitride films with sharp edge definition
US4895789A (en) * 1988-03-29 1990-01-23 Seiko Instruments Inc. Method of manufacturing non-linear resistive element array
KR100219550B1 (ko) * 1996-08-21 1999-09-01 윤종용 반사방지막 및 이를 이용한 패턴형성방법
JP3430091B2 (ja) * 1999-12-01 2003-07-28 Ｎｅｃエレクトロニクス株式会社 エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
US6794311B2 (en) * 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
US7238393B2 (en) * 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
KR101158298B1 (ko) * 2003-12-26 2012-06-26 닛산 가가쿠 고교 가부시키 가이샤 하드 마스크용 도포형 질화막 형성 조성물
TW200631095A (en) * 2005-01-27 2006-09-01 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP4837370B2 (ja) * 2005-12-05 2011-12-14 東京エレクトロン株式会社 成膜方法
WO2007075369A1 (en) * 2005-12-16 2007-07-05 Asm International N.V. Low temperature doped silicon layer formation
JP5040913B2 (ja) * 2006-03-31 2012-10-03 富士通セミコンダクター株式会社 半導体装置の製造方法
US7528078B2 (en) * 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
US7550758B2 (en) * 2006-10-31 2009-06-23 Atmel Corporation Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
TW200405437A (en) * 2002-09-27 2004-04-01 Advanced Micro Devices Inc Hardmask employing multiple layers of silicon oxynitride
US20060040507A1 (en) * 2004-08-17 2006-02-23 Mak Cecilia Y Method for depositing porous films
TW200803988A (en) * 2006-03-31 2008-01-16 Exxonmobil Res & Eng Co Improved FCC catalyst stripper configuration
TW200908138A (en) * 2007-05-03 2009-02-16 Lam Res Corp Hardmask open and etch profile control with hardmask open

Also Published As

Publication number Publication date
JP5656010B2 (ja) 2015-01-21
CN102097364A (zh) 2011-06-15
JP2011139033A (ja) 2011-07-14
KR20110063386A (ko) 2011-06-10
TW201543574A (zh) 2015-11-16
KR101798235B1 (ko) 2017-11-15
CN105185707A (zh) 2015-12-23
KR101907802B1 (ko) 2018-12-05
CN105185707B (zh) 2018-06-01
TWI547997B (zh) 2016-09-01
KR20170126827A (ko) 2017-11-20
CN102097364B (zh) 2015-10-14
TW201130050A (en) 2011-09-01

Similar Documents

Publication Publication Date Title
TWI505364B (zh) 硬遮罩材料
US8247332B2 (en) Hardmask materials
US8178443B2 (en) Hardmask materials
TWI624860B (zh) 含氧之陶瓷硬遮罩及相關濕式清潔
TW202334478A (zh) 氧化矽之拓撲選擇性膜形成之方法
TWI541898B (zh) 用於半導體整合之非敏性乾式移除製程
US7964442B2 (en) Methods to obtain low k dielectric barrier with superior etch resistivity
US6656840B2 (en) Method for forming silicon containing layers on a substrate
TWI482219B (zh) 使用含氮前驅物的介電阻絕物的沉積方法
CN102906859A (zh) 对用于光刻掩模应用的富含硼的膜的设计
US20230066543A1 (en) Fully self aligned via integration processes
US10593543B2 (en) Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth
KR102356462B1 (ko) 산소-함유 세라믹 하드 마스크들 및 관련 습식-세정들
US12563982B2 (en) Additives to enhance the properties of dielectric films

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees