TWI502680B - A substrate stage, a substrate processing device, and a temperature control method - Google Patents

A substrate stage, a substrate processing device, and a temperature control method Download PDF

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Publication number
TWI502680B
TWI502680B TW097133598A TW97133598A TWI502680B TW I502680 B TWI502680 B TW I502680B TW 097133598 A TW097133598 A TW 097133598A TW 97133598 A TW97133598 A TW 97133598A TW I502680 B TWI502680 B TW I502680B
Authority
TW
Taiwan
Prior art keywords
substrate
heat transfer
transfer gas
mounting table
sec
Prior art date
Application number
TW097133598A
Other languages
English (en)
Chinese (zh)
Other versions
TW200931587A (en
Inventor
Yasuharu Sasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200931587A publication Critical patent/TW200931587A/zh
Application granted granted Critical
Publication of TWI502680B publication Critical patent/TWI502680B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW097133598A 2007-09-03 2008-09-02 A substrate stage, a substrate processing device, and a temperature control method TWI502680B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007227708A JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法

Publications (2)

Publication Number Publication Date
TW200931587A TW200931587A (en) 2009-07-16
TWI502680B true TWI502680B (zh) 2015-10-01

Family

ID=40463061

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097133598A TWI502680B (zh) 2007-09-03 2008-09-02 A substrate stage, a substrate processing device, and a temperature control method

Country Status (5)

Country Link
US (2) US20090233443A1 (enExample)
JP (1) JP2009060011A (enExample)
KR (1) KR101037461B1 (enExample)
CN (1) CN100585828C (enExample)
TW (1) TWI502680B (enExample)

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* Cited by examiner, † Cited by third party
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US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP5869899B2 (ja) 2011-04-01 2016-02-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー
NL2009189A (en) 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
WO2015043890A1 (en) 2013-09-27 2015-04-02 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
KR102113624B1 (ko) * 2013-12-27 2020-05-21 엘지디스플레이 주식회사 표시패널 제조장치
JP6212412B2 (ja) * 2014-02-28 2017-10-11 日本特殊陶業株式会社 真空吸着部材
JP6420900B2 (ja) 2014-10-23 2018-11-07 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置用の支持テーブル、基板をロードする方法、リソグラフィ装置及びデバイス製造方法
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104835761A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种边缘出气的可控温加热盘
CN104835765A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种多边形分布的凸台表面结构的可控温加热盘
KR102348108B1 (ko) * 2015-10-05 2022-01-10 주식회사 미코세라믹스 온도 편차 특성이 개선된 기판 가열 장치
JP6592188B2 (ja) * 2016-03-30 2019-10-16 京セラ株式会社 吸着部材
KR102163938B1 (ko) * 2016-06-23 2020-10-12 가부시키가이샤 알박 유지 장치
JP6918642B2 (ja) * 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
CN107910250A (zh) * 2017-11-16 2018-04-13 德淮半导体有限公司 晶片处理设备及方法
KR102516339B1 (ko) * 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법
JP7175114B2 (ja) * 2018-07-19 2022-11-18 東京エレクトロン株式会社 載置台及び電極部材
CN111052344B (zh) 2018-08-13 2024-04-02 朗姆研究公司 边缘环组件
JP7407529B2 (ja) * 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
US12444579B2 (en) 2020-03-23 2025-10-14 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
CN112530846B (zh) * 2020-12-01 2024-06-21 北京北方华创微电子装备有限公司 承载盘及控温装置

Citations (9)

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Publication number Priority date Publication date Assignee Title
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
JP2000317761A (ja) * 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US20010054389A1 (en) * 2000-06-14 2001-12-27 Yasumi Sago Electro-static chucking mechanism and surface processing apparatus
KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
JP2006156938A (ja) * 2004-10-29 2006-06-15 Tokyo Electron Ltd 基板載置台、基板処理装置、および基板の温度制御方法
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

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JPH05109847A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 発熱体の冷却装置
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JPH07201956A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp ウエハ冷却装置
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
JP4317329B2 (ja) * 2000-01-20 2009-08-19 日本碍子株式会社 静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
JP2005085803A (ja) * 2003-09-04 2005-03-31 Shinwa Controls Co Ltd サセプタ
JP2004119987A (ja) * 2003-10-22 2004-04-15 Hitachi Ltd 半導体製造装置
JP5011736B2 (ja) * 2006-01-31 2012-08-29 住友大阪セメント株式会社 静電チャック装置
US7646581B2 (en) * 2006-01-31 2010-01-12 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
JP2000317761A (ja) * 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US20010054389A1 (en) * 2000-06-14 2001-12-27 Yasumi Sago Electro-static chucking mechanism and surface processing apparatus
KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
JP2006156938A (ja) * 2004-10-29 2006-06-15 Tokyo Electron Ltd 基板載置台、基板処理装置、および基板の温度制御方法
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

Also Published As

Publication number Publication date
KR20090024075A (ko) 2009-03-06
US20140076515A1 (en) 2014-03-20
KR101037461B1 (ko) 2011-05-26
CN101383314A (zh) 2009-03-11
JP2009060011A (ja) 2009-03-19
TW200931587A (en) 2009-07-16
CN100585828C (zh) 2010-01-27
US20090233443A1 (en) 2009-09-17

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