KR101037461B1 - 기판탑재대, 기판 처리 장치, 및 온도 제어 방법 - Google Patents

기판탑재대, 기판 처리 장치, 및 온도 제어 방법 Download PDF

Info

Publication number
KR101037461B1
KR101037461B1 KR1020080084461A KR20080084461A KR101037461B1 KR 101037461 B1 KR101037461 B1 KR 101037461B1 KR 1020080084461 A KR1020080084461 A KR 1020080084461A KR 20080084461 A KR20080084461 A KR 20080084461A KR 101037461 B1 KR101037461 B1 KR 101037461B1
Authority
KR
South Korea
Prior art keywords
substrate
heat transfer
gas
transfer gas
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020080084461A
Other languages
English (en)
Korean (ko)
Other versions
KR20090024075A (ko
Inventor
야스하루 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20090024075A publication Critical patent/KR20090024075A/ko
Application granted granted Critical
Publication of KR101037461B1 publication Critical patent/KR101037461B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020080084461A 2007-09-03 2008-08-28 기판탑재대, 기판 처리 장치, 및 온도 제어 방법 Active KR101037461B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007227708A JP2009060011A (ja) 2007-09-03 2007-09-03 基板載置台、基板処理装置、及び温度制御方法
JPJP-P-2007-00227708 2007-09-03

Publications (2)

Publication Number Publication Date
KR20090024075A KR20090024075A (ko) 2009-03-06
KR101037461B1 true KR101037461B1 (ko) 2011-05-26

Family

ID=40463061

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080084461A Active KR101037461B1 (ko) 2007-09-03 2008-08-28 기판탑재대, 기판 처리 장치, 및 온도 제어 방법

Country Status (5)

Country Link
US (2) US20090233443A1 (enExample)
JP (1) JP2009060011A (enExample)
KR (1) KR101037461B1 (enExample)
CN (1) CN100585828C (enExample)
TW (1) TWI502680B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
JP5869899B2 (ja) 2011-04-01 2016-02-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー
NL2009189A (en) 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
JP6244454B2 (ja) 2013-09-27 2017-12-06 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のための支持テーブル、リソグラフィ装置、及び、デバイス製造方法
KR102113624B1 (ko) * 2013-12-27 2020-05-21 엘지디스플레이 주식회사 표시패널 제조장치
JP6212412B2 (ja) * 2014-02-28 2017-10-11 日本特殊陶業株式会社 真空吸着部材
EP3210080B1 (en) 2014-10-23 2020-12-09 ASML Netherlands B.V. Support table for a lithographic apparatus, method of loading a substrate, lithographic apparatus and device manufacturing method
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104835765A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种多边形分布的凸台表面结构的可控温加热盘
CN104835761A (zh) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 一种边缘出气的可控温加热盘
KR102348108B1 (ko) * 2015-10-05 2022-01-10 주식회사 미코세라믹스 온도 편차 특성이 개선된 기판 가열 장치
JP6592188B2 (ja) * 2016-03-30 2019-10-16 京セラ株式会社 吸着部材
KR102163938B1 (ko) * 2016-06-23 2020-10-12 가부시키가이샤 알박 유지 장치
JP6918642B2 (ja) 2017-08-25 2021-08-11 東京エレクトロン株式会社 冷媒用の流路を有する部材、冷媒用の流路を有する部材の制御方法及び基板処理装置
CN107910250A (zh) * 2017-11-16 2018-04-13 德淮半导体有限公司 晶片处理设备及方法
KR102516339B1 (ko) * 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법
JP7175114B2 (ja) * 2018-07-19 2022-11-18 東京エレクトロン株式会社 載置台及び電極部材
KR20230106754A (ko) 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
JP7407529B2 (ja) 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
CN112530846B (zh) * 2020-12-01 2024-06-21 北京北方华创微电子装备有限公司 承载盘及控温装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109847A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 発熱体の冷却装置
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JPH07201956A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp ウエハ冷却装置
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
JP2000317761A (ja) * 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
JP4317329B2 (ja) * 2000-01-20 2009-08-19 日本碍子株式会社 静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
JP4697833B2 (ja) * 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
JP2005085803A (ja) * 2003-09-04 2005-03-31 Shinwa Controls Co Ltd サセプタ
JP2004119987A (ja) * 2003-10-22 2004-04-15 Hitachi Ltd 半導体製造装置
JP4642550B2 (ja) * 2004-10-29 2011-03-02 東京エレクトロン株式会社 基板載置台、基板処理装置、および基板の温度制御方法
JP5011736B2 (ja) * 2006-01-31 2012-08-29 住友大阪セメント株式会社 静電チャック装置
US7646581B2 (en) * 2006-01-31 2010-01-12 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020094353A (ko) * 2001-06-11 2002-12-18 삼성전자 주식회사 웨이퍼 쿨링 스테이지
KR100504283B1 (ko) * 2003-06-28 2005-07-27 (주) 대홍기업 웨이퍼 재치대용 플레이트 및 이 플레이트가 채택된 웨이퍼 재치대
KR20050069684A (ko) * 2003-12-31 2005-07-05 동부아남반도체 주식회사 반도체 웨이퍼용 정전척의 온도조절장치 및 온도조절방법
KR20060121702A (ko) * 2005-05-23 2006-11-29 동경 엘렉트론 주식회사 정전 흡착 전극 및 처리 장치

Also Published As

Publication number Publication date
US20140076515A1 (en) 2014-03-20
TWI502680B (zh) 2015-10-01
TW200931587A (en) 2009-07-16
US20090233443A1 (en) 2009-09-17
CN101383314A (zh) 2009-03-11
KR20090024075A (ko) 2009-03-06
CN100585828C (zh) 2010-01-27
JP2009060011A (ja) 2009-03-19

Similar Documents

Publication Publication Date Title
KR101037461B1 (ko) 기판탑재대, 기판 처리 장치, 및 온도 제어 방법
JP6651576B2 (ja) マルチゾーン温度制御および多パージ機能を有するペデスタル
US10354843B2 (en) Chemical control features in wafer process equipment
US20090159566A1 (en) Method and apparatus for controlling temperature of a substrate
KR100550342B1 (ko) 가스 산포 방법, 및 샤워 헤드, 및 샤워 헤드를 구비하는반도체 기판 가공 장치
TWI802790B (zh) 氣體噴淋頭及其製作方法以及包括氣體噴淋頭的電漿裝置
KR102564514B1 (ko) 방위각 믹서
JP2012129547A (ja) 基板載置台、基板処理装置、および温度制御方法
TW201448026A (zh) 具有溫控之多充氣部噴淋頭
CN108242382A (zh) 等离子体处理装置
TW201401431A (zh) 具有冷卻底座之靜電夾盤
JP3913244B2 (ja) 基板処理方法
JP2000294538A (ja) 真空処理装置
JP2006120872A (ja) ガス拡散プレート
US20250305128A1 (en) Multi-zone gas distribution for asymmetric wafer bow compensation
KR200431206Y1 (ko) 삽입부 없이 고종횡비 미세구조물을 에칭하기에 적절한상부 챔버 라이너
CN111816584B (zh) 喷头、包括其的半导体制造装置以及半导体制造方法
KR20240036099A (ko) 메조 채널 어셈블리들을 갖는 기판 지지부들
TW202211988A (zh) 高溫製程用軸向冷卻金屬噴淋頭
KR20030019994A (ko) 반도체 장치 제조 공정에 사용되는 가스를 제공하는 장치및 이를 갖는 가공장치

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20080828

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20100528

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20101130

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20100528

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20101230

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20101130

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20110222

Appeal identifier: 2010101010207

Request date: 20101230

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20101230

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20101230

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20100830

Patent event code: PB09011R02I

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

Patent event date: 20110222

Comment text: Decision to Grant Registration

Patent event code: PB07012S01D

Patent event date: 20110201

Comment text: Transfer of Trial File for Re-examination before a Trial

Patent event code: PB07011S01I

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20110520

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20110520

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20140502

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20140502

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20150416

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20150416

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20160418

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20160418

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20170421

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20170421

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20180502

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20180502

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20190429

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20190429

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20200506

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20210503

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20220418

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20230420

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20240424

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20250407

Start annual number: 15

End annual number: 15