TWI497597B - Substrate handling method - Google Patents
Substrate handling method Download PDFInfo
- Publication number
- TWI497597B TWI497597B TW096123567A TW96123567A TWI497597B TW I497597 B TWI497597 B TW I497597B TW 096123567 A TW096123567 A TW 096123567A TW 96123567 A TW96123567 A TW 96123567A TW I497597 B TWI497597 B TW I497597B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide film
- nitride film
- substrate
- processing method
- film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 94
- 238000000034 method Methods 0.000 title description 16
- 239000007789 gas Substances 0.000 claims description 70
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 61
- 239000001301 oxygen Substances 0.000 claims description 61
- 229910052760 oxygen Inorganic materials 0.000 claims description 61
- 150000004767 nitrides Chemical class 0.000 claims description 52
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 49
- 238000003672 processing method Methods 0.000 claims description 45
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Chemical compound [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims description 24
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 12
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 12
- 150000001768 cations Chemical class 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 71
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 48
- 229960002050 hydrofluoric acid Drugs 0.000 description 28
- 238000005530 etching Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 9
- 229910001936 tantalum oxide Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 229910000484 niobium oxide Inorganic materials 0.000 description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 208000037998 chronic venous disease Diseases 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- -1 ruthenium nitride Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006180184A JP5102467B2 (ja) | 2006-06-29 | 2006-06-29 | 基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200818316A TW200818316A (en) | 2008-04-16 |
| TWI497597B true TWI497597B (zh) | 2015-08-21 |
Family
ID=39011559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096123567A TWI497597B (zh) | 2006-06-29 | 2007-06-28 | Substrate handling method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5102467B2 (ja) |
| KR (1) | KR100880747B1 (ja) |
| CN (1) | CN100514572C (ja) |
| TW (1) | TWI497597B (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8329587B2 (en) * | 2009-10-05 | 2012-12-11 | Applied Materials, Inc. | Post-planarization densification |
| CN103403860B (zh) * | 2011-03-04 | 2015-11-25 | 旭化成微电子株式会社 | 半导体装置、半导体装置的制造方法 |
| US9093389B2 (en) * | 2013-01-16 | 2015-07-28 | Applied Materials, Inc. | Method of patterning a silicon nitride dielectric film |
| JP6073172B2 (ja) * | 2013-03-29 | 2017-02-01 | 岩谷産業株式会社 | エッチング方法 |
| KR102095983B1 (ko) * | 2017-08-24 | 2020-04-02 | 피에스케이홀딩스 (주) | 기판 처리 장치 및 기판 처리 방법 |
| KR200489542Y1 (ko) | 2017-09-12 | 2019-07-04 | 미라클통상 주식회사 | 애견용 방석·카시트 겸용 소파 |
| KR102281826B1 (ko) * | 2019-07-08 | 2021-07-23 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| JP7414593B2 (ja) * | 2020-03-10 | 2024-01-16 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534351B2 (en) * | 2001-03-19 | 2003-03-18 | International Business Machines Corporation | Gate-controlled, graded-extension device for deep sub-micron ultra-high-performance devices |
| US20040043638A1 (en) * | 2002-08-30 | 2004-03-04 | Fujitsu Amd Semiconductor Limited | Semiconductor memory device and method for manufacturing semiconductor device |
| US20050181607A1 (en) * | 2003-03-31 | 2005-08-18 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
| US20060042752A1 (en) * | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
| US20060057828A1 (en) * | 2004-09-10 | 2006-03-16 | Mitsuhiro Omura | Method of manufacturing semiconductor device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1539700A (en) * | 1976-05-14 | 1979-01-31 | Int Plasma Corp | Process for etching sio2 |
| JPS57138139A (en) * | 1981-02-19 | 1982-08-26 | Nec Home Electronics Ltd | Etching method for insulating film of semiconductor device |
| JPH0628259B2 (ja) | 1982-12-27 | 1994-04-13 | 富士通株式会社 | 半導体装置の製造方法 |
| JPS6276630A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | ドライ洗浄方法 |
| US5279705A (en) * | 1990-11-28 | 1994-01-18 | Dainippon Screen Mfg. Co., Ltd. | Gaseous process for selectively removing silicon nitride film |
| JPH09171996A (ja) * | 1995-12-19 | 1997-06-30 | Toshiba Corp | 半導体基板の処理方法及びその処理装置 |
| JP3519066B2 (ja) * | 2001-08-27 | 2004-04-12 | 忠弘 大見 | プラズマプロセス用装置 |
| US7077903B2 (en) | 2003-11-10 | 2006-07-18 | International Business Machines Corporation | Etch selectivity enhancement for tunable etch resistant anti-reflective layer |
| KR100541680B1 (ko) * | 2003-11-28 | 2006-01-11 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 형성방법 |
| US20070209200A1 (en) | 2004-03-31 | 2007-09-13 | Tadahiro Ohmi | Circuit Board, Method Of Manufacturing Circuit Board, And Display Device Having Circuit Board |
-
2006
- 2006-06-29 JP JP2006180184A patent/JP5102467B2/ja active Active
-
2007
- 2007-05-31 KR KR1020070053364A patent/KR100880747B1/ko active IP Right Grant
- 2007-06-28 TW TW096123567A patent/TWI497597B/zh active
- 2007-06-29 CN CNB2007101268794A patent/CN100514572C/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534351B2 (en) * | 2001-03-19 | 2003-03-18 | International Business Machines Corporation | Gate-controlled, graded-extension device for deep sub-micron ultra-high-performance devices |
| US20040043638A1 (en) * | 2002-08-30 | 2004-03-04 | Fujitsu Amd Semiconductor Limited | Semiconductor memory device and method for manufacturing semiconductor device |
| US20050181607A1 (en) * | 2003-03-31 | 2005-08-18 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
| US20060042752A1 (en) * | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
| US20060057828A1 (en) * | 2004-09-10 | 2006-03-16 | Mitsuhiro Omura | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100880747B1 (ko) | 2009-02-02 |
| JP2008010661A (ja) | 2008-01-17 |
| JP5102467B2 (ja) | 2012-12-19 |
| CN101097865A (zh) | 2008-01-02 |
| CN100514572C (zh) | 2009-07-15 |
| KR20080001612A (ko) | 2008-01-03 |
| TW200818316A (en) | 2008-04-16 |
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