CN100514572C - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN100514572C
CN100514572C CNB2007101268794A CN200710126879A CN100514572C CN 100514572 C CN100514572 C CN 100514572C CN B2007101268794 A CNB2007101268794 A CN B2007101268794A CN 200710126879 A CN200710126879 A CN 200710126879A CN 100514572 C CN100514572 C CN 100514572C
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CN
China
Prior art keywords
film
nitride film
substrate
gas
wafer
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CNB2007101268794A
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English (en)
Chinese (zh)
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CN101097865A (zh
Inventor
西村荣一
八田浩一
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of CN101097865A publication Critical patent/CN101097865A/zh
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Publication of CN100514572C publication Critical patent/CN100514572C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
CNB2007101268794A 2006-06-29 2007-06-29 基板处理方法和基板处理装置 Active CN100514572C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006180184A JP5102467B2 (ja) 2006-06-29 2006-06-29 基板処理方法
JP2006180184 2006-06-29

Publications (2)

Publication Number Publication Date
CN101097865A CN101097865A (zh) 2008-01-02
CN100514572C true CN100514572C (zh) 2009-07-15

Family

ID=39011559

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007101268794A Active CN100514572C (zh) 2006-06-29 2007-06-29 基板处理方法和基板处理装置

Country Status (4)

Country Link
JP (1) JP5102467B2 (ja)
KR (1) KR100880747B1 (ja)
CN (1) CN100514572C (ja)
TW (1) TWI497597B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8329587B2 (en) * 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
CN103403860B (zh) * 2011-03-04 2015-11-25 旭化成微电子株式会社 半导体装置、半导体装置的制造方法
US9093389B2 (en) * 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
JP6073172B2 (ja) * 2013-03-29 2017-02-01 岩谷産業株式会社 エッチング方法
KR102095983B1 (ko) * 2017-08-24 2020-04-02 피에스케이홀딩스 (주) 기판 처리 장치 및 기판 처리 방법
KR200489542Y1 (ko) 2017-09-12 2019-07-04 미라클통상 주식회사 애견용 방석·카시트 겸용 소파
KR102281826B1 (ko) * 2019-07-08 2021-07-23 세메스 주식회사 기판 처리 장치 및 방법
JP7414593B2 (ja) * 2020-03-10 2024-01-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539700A (en) * 1976-05-14 1979-01-31 Int Plasma Corp Process for etching sio2
JPS57138139A (en) * 1981-02-19 1982-08-26 Nec Home Electronics Ltd Etching method for insulating film of semiconductor device
JPH0628259B2 (ja) 1982-12-27 1994-04-13 富士通株式会社 半導体装置の製造方法
JPS6276630A (ja) * 1985-09-30 1987-04-08 Toshiba Corp ドライ洗浄方法
US5279705A (en) * 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
JPH09171996A (ja) * 1995-12-19 1997-06-30 Toshiba Corp 半導体基板の処理方法及びその処理装置
US6534351B2 (en) * 2001-03-19 2003-03-18 International Business Machines Corporation Gate-controlled, graded-extension device for deep sub-micron ultra-high-performance devices
JP3519066B2 (ja) * 2001-08-27 2004-04-12 忠弘 大見 プラズマプロセス用装置
JP2004095918A (ja) * 2002-08-30 2004-03-25 Fasl Japan Ltd 半導体記憶装置及び半導体装置の製造方法
JP3974547B2 (ja) * 2003-03-31 2007-09-12 株式会社東芝 半導体装置および半導体装置の製造方法
US7077903B2 (en) 2003-11-10 2006-07-18 International Business Machines Corporation Etch selectivity enhancement for tunable etch resistant anti-reflective layer
KR100541680B1 (ko) * 2003-11-28 2006-01-11 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
US20070209200A1 (en) 2004-03-31 2007-09-13 Tadahiro Ohmi Circuit Board, Method Of Manufacturing Circuit Board, And Display Device Having Circuit Board
US20060042752A1 (en) * 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
JP2006108629A (ja) * 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
KR100880747B1 (ko) 2009-02-02
TWI497597B (zh) 2015-08-21
JP2008010661A (ja) 2008-01-17
JP5102467B2 (ja) 2012-12-19
CN101097865A (zh) 2008-01-02
KR20080001612A (ko) 2008-01-03
TW200818316A (en) 2008-04-16

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