TWI495149B - 電流擴散效果優秀的氮化物半導體發光器件及其製備方法 - Google Patents
電流擴散效果優秀的氮化物半導體發光器件及其製備方法 Download PDFInfo
- Publication number
- TWI495149B TWI495149B TW101128685A TW101128685A TWI495149B TW I495149 B TWI495149 B TW I495149B TW 101128685 A TW101128685 A TW 101128685A TW 101128685 A TW101128685 A TW 101128685A TW I495149 B TWI495149 B TW I495149B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- current diffusion
- concentration
- carbon
- diffusion portion
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title claims description 262
- 238000003892 spreading Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 230000000694 effects Effects 0.000 title description 4
- 238000009792 diffusion process Methods 0.000 claims description 241
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 100
- 229910052799 carbon Inorganic materials 0.000 claims description 100
- 239000004065 semiconductor Substances 0.000 claims description 88
- 239000012535 impurity Substances 0.000 claims description 52
- 239000002019 doping agent Substances 0.000 claims description 40
- 229910052684 Cerium Inorganic materials 0.000 claims description 39
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000012808 vapor phase Substances 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 403
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 25
- 229910002601 GaN Inorganic materials 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 239000010931 gold Substances 0.000 description 12
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 229910000480 nickel oxide Inorganic materials 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910003437 indium oxide Inorganic materials 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- RLWNPPOLRLYUAH-UHFFFAOYSA-N [O-2].[In+3].[Cu+2] Chemical compound [O-2].[In+3].[Cu+2] RLWNPPOLRLYUAH-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110078778A KR101175183B1 (ko) | 2011-08-08 | 2011-08-08 | 전류 확산 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201308659A TW201308659A (zh) | 2013-02-16 |
| TWI495149B true TWI495149B (zh) | 2015-08-01 |
Family
ID=46887462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101128685A TWI495149B (zh) | 2011-08-08 | 2012-08-08 | 電流擴散效果優秀的氮化物半導體發光器件及其製備方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9099600B2 (ja) |
| EP (1) | EP2743996A4 (ja) |
| JP (1) | JP2014522125A (ja) |
| KR (1) | KR101175183B1 (ja) |
| CN (1) | CN103748698A (ja) |
| TW (1) | TWI495149B (ja) |
| WO (1) | WO2013022227A2 (ja) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI597862B (zh) * | 2013-08-30 | 2017-09-01 | 晶元光電股份有限公司 | 具阻障層的光電半導體元件 |
| TWI509835B (zh) * | 2013-10-01 | 2015-11-21 | Opto Tech Corp | 白光二極體 |
| US9923119B2 (en) | 2013-10-01 | 2018-03-20 | Opto Tech Corporation | White LED chip and white LED packaging device |
| KR102224109B1 (ko) * | 2014-07-15 | 2021-03-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법 및 조명시스템 |
| US9608103B2 (en) * | 2014-10-02 | 2017-03-28 | Toshiba Corporation | High electron mobility transistor with periodically carbon doped gallium nitride |
| CN104300064B (zh) * | 2014-10-10 | 2018-04-24 | 华灿光电(苏州）有限公司 | 一种GaN基发光二极管的外延片及其制备方法 |
| CN104701359B (zh) * | 2015-03-10 | 2018-02-02 | 苏州能屋电子科技有限公司 | 垂直结构AlGaN/GaN HEMT器件及其制作方法 |
| CN104659082B (zh) * | 2015-03-12 | 2018-02-02 | 苏州能屋电子科技有限公司 | 垂直结构AlGaN/GaN HEMT器件及其制作方法 |
| CN105845788B (zh) * | 2016-04-08 | 2018-02-09 | 湘能华磊光电股份有限公司 | 一种led电流扩展层外延生长方法 |
| CN105869994B (zh) * | 2016-04-14 | 2018-04-06 | 湘能华磊光电股份有限公司 | 一种超晶格层的生长方法及含此结构的led外延结构 |
| CN105870282B (zh) * | 2016-04-14 | 2018-02-16 | 湘能华磊光电股份有限公司 | 一种电流扩展层的生长方法及含此结构的led外延结构 |
| DE102017104719A1 (de) | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper und Halbleiterchip |
| KR102432226B1 (ko) * | 2017-12-01 | 2022-08-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| CN109346566A (zh) * | 2018-08-31 | 2019-02-15 | 华灿光电（浙江）有限公司 | 一种氮化镓基发光二极管外延片及其制备方法 |
| TWI816186B (zh) * | 2021-09-28 | 2023-09-21 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| TWI839293B (zh) * | 2021-09-28 | 2024-04-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| US20240128419A1 (en) * | 2022-09-29 | 2024-04-18 | Bolb Inc. | Current spreading structure for light-emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100738399B1 (ko) * | 2006-04-18 | 2007-07-12 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| TW201044637A (en) * | 2009-03-06 | 2010-12-16 | Showa Denko Kk | Group III nitride compound semiconductor light emitting device and production method thereof, and lamp |
| TW201126755A (en) * | 2010-01-29 | 2011-08-01 | Advanced Optoelectronic Tech | Light emitting diode and method for manufacturing the same |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5693963A (en) * | 1994-09-19 | 1997-12-02 | Kabushiki Kaisha Toshiba | Compound semiconductor device with nitride |
| JP3491375B2 (ja) * | 1995-03-30 | 2004-01-26 | 昭和電工株式会社 | 発光素子及びその製造方法 |
| JPH0992883A (ja) * | 1995-09-28 | 1997-04-04 | Toshiba Corp | 半導体ウェハ、半導体素子、その製造方法及び半導体素子の製造に用いる成長装置 |
| JP3744211B2 (ja) * | 1997-09-01 | 2006-02-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP3897448B2 (ja) * | 1998-04-27 | 2007-03-22 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| JP2000101133A (ja) | 1998-09-21 | 2000-04-07 | Hitachi Cable Ltd | 発光素子用エピタキシャルウェハ及びその製造方法 |
| JP3063756B1 (ja) * | 1998-10-06 | 2000-07-12 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| US6810065B1 (en) * | 2000-11-28 | 2004-10-26 | Optical Communication Productions, Inc. | Low electrical resistance n-type mirror for optoelectronic devices |
| JP2005508077A (ja) * | 2001-10-22 | 2005-03-24 | イェール ユニバーシティ | 半導体材料のハイパードーピング方法、ハイパードープされた半導体材料、および、ハイパードープされた半導体装置 |
| US7812366B1 (en) * | 2005-03-18 | 2010-10-12 | The United States Of America As Represented By The Secretary Of The Army | Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same |
| WO2007013257A1 (ja) * | 2005-07-29 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | 窒化物系半導体素子 |
| KR100674862B1 (ko) * | 2005-08-25 | 2007-01-29 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
| KR101073249B1 (ko) * | 2005-09-06 | 2011-10-12 | 엘지이노텍 주식회사 | 수직형 발광 다이오드 및 그 제조방법 |
| JP5068020B2 (ja) * | 2006-02-20 | 2012-11-07 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
| JP2008066514A (ja) | 2006-09-07 | 2008-03-21 | Hitachi Cable Ltd | 半導体発光素子用エピタキシャルウェハ及び半導体発光素子 |
| KR100979701B1 (ko) * | 2008-08-25 | 2010-09-03 | 서울옵토디바이스주식회사 | 변조도핑층을 갖는 발광 다이오드 |
| KR101007086B1 (ko) | 2008-09-02 | 2011-01-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| US8536615B1 (en) * | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
-
2011
- 2011-08-08 KR KR1020110078778A patent/KR101175183B1/ko not_active IP Right Cessation
-
2012
- 2012-08-02 EP EP20120821814 patent/EP2743996A4/en not_active Withdrawn
- 2012-08-02 WO PCT/KR2012/006178 patent/WO2013022227A2/ko active Application Filing
- 2012-08-02 CN CN201280038922.0A patent/CN103748698A/zh active Pending
- 2012-08-02 US US14/237,299 patent/US9099600B2/en active Active
- 2012-08-02 JP JP2014524919A patent/JP2014522125A/ja active Pending
- 2012-08-08 TW TW101128685A patent/TWI495149B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100738399B1 (ko) * | 2006-04-18 | 2007-07-12 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| TW201044637A (en) * | 2009-03-06 | 2010-12-16 | Showa Denko Kk | Group III nitride compound semiconductor light emitting device and production method thereof, and lamp |
| TW201126755A (en) * | 2010-01-29 | 2011-08-01 | Advanced Optoelectronic Tech | Light emitting diode and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2743996A4 (en) | 2015-04-08 |
| EP2743996A2 (en) | 2014-06-18 |
| CN103748698A (zh) | 2014-04-23 |
| TW201308659A (zh) | 2013-02-16 |
| WO2013022227A3 (ko) | 2013-04-11 |
| US9099600B2 (en) | 2015-08-04 |
| KR101175183B1 (ko) | 2012-08-17 |
| WO2013022227A2 (ko) | 2013-02-14 |
| JP2014522125A (ja) | 2014-08-28 |
| US20140191193A1 (en) | 2014-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI495149B (zh) | 電流擴散效果優秀的氮化物半導體發光器件及其製備方法 | |
| US9166098B2 (en) | Nitride semiconductor light emitting device | |
| EP1829118B1 (en) | Nitride semiconductor light emitting device and fabrication method thereof | |
| JP4895587B2 (ja) | 窒化物半導体発光素子 | |
| TWI517431B (zh) | 形成發光二極體裝置的方法 | |
| KR101262726B1 (ko) | 탄소 도핑된 ｐ형 질화물층을 포함하는 질화물계 발광소자 제조 방법 | |
| US20150188009A1 (en) | Method of manufacturing semiconductor device | |
| US20080315212A1 (en) | Method for fabricating a p-type semiconductor structure | |
| KR101707358B1 (ko) | 질화물 발광 소자 및 그 제조 방법 | |
| JP2006179618A (ja) | 半導体発光素子およびその製造方法 | |
| WO2016072326A1 (ja) | 半導体発光素子 | |
| KR100743468B1 (ko) | 3족 질화물 반도체 발광소자 | |
| KR101874873B1 (ko) | 발광 소자 | |
| US20240178326A1 (en) | Semiconductor structure and manufacturing method thereof | |
| KR100918830B1 (ko) | 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 | |
| JP6103268B2 (ja) | 窒化物発光素子及びその製造方法 | |
| KR20130007031A (ko) | 발광 소자 제조 방법 | |
| KR20130078343A (ko) | 높은 자유 정공 농도를 가지는 질화물계 발광소자의 제조방법 | |
| KR20130079456A (ko) | 탄소 도핑된 ｐ형 질화물층을 포함하는 질화물계 발광소자 | |
| KR20120088366A (ko) | 질화물 반도체 발광소자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |