TWI494955B - 具改良光學及電學性能之導電膜或電極 - Google Patents

具改良光學及電學性能之導電膜或電極 Download PDF

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TWI494955B
TWI494955B TW098120292A TW98120292A TWI494955B TW I494955 B TWI494955 B TW I494955B TW 098120292 A TW098120292 A TW 098120292A TW 98120292 A TW98120292 A TW 98120292A TW I494955 B TWI494955 B TW I494955B
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Manoj Nirmal
Robert Lewis Brott
Stephen Paul Maki
Donald James Mcclure
Jason Carl Radel
Clark Ivan Bright
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3M Innovative Properties Co
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Description

具改良光學及電學性能之導電膜或電極
一種膽固醇型液晶(ChLC)材料係由一向列型液晶及一對掌性添加劑摻合在一起而組成,以自發地形成具有一經良好定義之螺距的一螺旋結構。該螺距決定由該材料反射之光的波長及由此決定其之色彩。亦可藉由改變向列型液晶及對掌性組份的比例而調整色彩。藉由應用適當的驅動方案,一ChLC顯示器中之一像素可在其平面反射(有色的)狀態與其半透明焦錐狀態之間切換。在一ChLC器件中,來自該等電極之反射可發生,並且該等反射係非所要的,因為其等反射使器件的性能降級。
與本發明一致的一種導電膜及電極包括一基板及由一透明或半透明之介入層所分離之兩個透明或半透明導電層。介入層有助於減少發生於合併該電極之一器件中之非需要的界面反射,該介入層包含位於該兩個導電層之間之導電路徑。相對於具有相同組合導電層厚度之兩個電絕緣導電層,此改良了導電膜或電極的電屬性。
本發明之實施例係關於具有改良電學及光學屬性之顯示基板電極。該等電極可用於其中例如層與層之間所形成的反射係有損於器件性能的任何顯示器中。該等電極亦可用於各種類型的顯示材料中,例如ChLC材料或電致變色材料。術語「顯示材料」係指藉由一顯示器件中之一電極而活化的任何類型之材料。其他可合併該等電極的顯示器件包含觸控螢幕、液晶顯示器及有機發光二極體(OLED)器件。該等電極亦可用於其他非顯示器件中,舉例而言,諸如被動式窗、智慧型窗、太陽能電池及光電器件。
本發明之其他實施例包含非用作一顯示器件電極之一導電膜。這種導電膜可用於其中導電性為紅外線反射提供必要條件之膜應用中。該等膜應用包含以下實例:窗、照明設備、建築、汽車、器具及科學儀器。該等導電膜也可用於照明及投影機,其中該膜透射可見光且該膜反射紅外線熱。
該電極或導電膜包含具有一特定折射率的兩個或兩個以上導電層及介入導電或絕緣層,該等介入導電或絕緣層具有一不同之折射率且具有導電路徑。該等導電層及介入層各為透明或半透明。當此等基板被併入於一ChLC顯示器中時,調諧電極堆疊中的個別層之厚度及個別層之光折射率,以最小化非所要之菲涅耳(Fresnel)反射。在一較佳實施例中,該等導電層係對稱的,這意謂著該等導電層具有相同的厚度。在其他實施例中,該等導電層可具有不同的厚度。
這種電極構造顯著改良了顯示器之黑階、色彩飽和度且由此改良顯示器之對比度。此外,該等介入層允許該電極之該等導電層之間的電接觸。結果,多層電極之導電性高於堆疊中該等個別導電層之導電性。由於顯示器的大小可能受限於電極之片電阻,該多層電極能製造更大的顯示面板。相較於具有單層電極之器件,使用多層電極製造之顯示器展現出經顯著改良的電學及光學性能。
不同於一習知的基於向列型液晶(NLC)之顯示器,一ChLC顯示器不需要偏光或彩色濾光器,此導致成本可能更低的一更簡單之器件構造。在一全彩NLC顯示器中,紅-綠-藍(RGB)子像素係並列配置。結果,該等個別RGB原色之每一者僅佔據三分之一的檢視區。另一方面,每個ChLC RGB子像素反射一單原色的同時透射其他兩個單原色。
圖1繪示一單色ChLC顯示器10,其包含一堆疊,該堆疊具有處於如圖所示之組態的以下層:一基板12、一電極14、一ChLC材料16、一電極18、一基板20,及一黑吸收體22。來自ChLC材料16之一反射26造成一顯示色彩。界面反射24及28可發生於層之間,例如在基板與電極之界面處,而該等界面反射是非所要的。一全彩ChLC顯示器可藉由堆疊一組RGB面板而組成,其中該等個別RGB子像素係重疊於彼此的頂端並反射光譜中的不同區域。顯示面板的背面塗有一寬頻吸收體22,其吸收先前層未反射之光。吸收體包含以下例示性材料:KRYLON消光或光滑黑色的丙烯酸瓷噴漆。
圖2繪示用於一ChLC顯示器之一先前技術電極30。一基板38為器件提供支撐。該先前技術電極包含由一介電聚合物連續層34所分離之兩層透明導電氧化物(TCO)層32及36。基板可使用以下例示性材料製:玻璃、PET、PEN(聚乙烯萘)、PC(聚碳酸酯)、PEEK(聚醚醚酮)、PES(聚醚碸)、PAR(多芳基化合物)、PI(聚醯亞胺)、PMMA、PCO(多環烯烃)、TAC(纖維素三乙酸酯)及聚胺基甲酸酯。透明導電氧化物包含以下例示性材料:氧化銦錫、氧化銦鋅、氧化鎘、Zn2 SnO4 、ZnSnO3 、MgIn2 O4 、GaInO3 、(Ga,In)2 O3 、Zn2 In2 O5 、In4 Sn3 O12 、SnO2 及In2 O3
一ChLC顯示器中的每個子像素都包含夾於兩個導電基板之間之ChLC材料。可使用光學黏著劑將該等子像素接合在一起。或者,可於每個基板的兩側面上塗佈並圖案化導體,以消除光學黏著層。可包含紅色及黃色彩色濾光器以改良色飽和度及最小化視角之色移。所檢視到的每個堆疊像素之色彩係藉由每個子像素之反射的總和而決定。RGB三原色利用全部檢視區使得顯著改良亮度。
在顯示器開啟(反射)狀態中,由一像素反射之光包含ChLC平面反射及在每一界面上因折射率失配引起的非所要之菲涅耳反射,由反射24及28表示。菲涅耳反射典型地為寬頻且因此使顯示器的色飽和度降級。在顯示器關閉狀態,由一像素反射之光包含來自半透明焦錐狀態之散射及界面菲涅耳反射。此等反射使顯示器的黑階降級且因此使低對比度降級。
菲涅耳反射的量值取決於界面處之折射率的比率。在法線入射下,其係由以下方程式決定:
其中n係具有折射率n2、n1之兩個介質之相對折射率。菲涅耳反射在具有最高相對折射率之界面上為最強。圖1所示之器件10之不同層之折射率如下:對於電極n=2.0、對於基板n=1.65,及對於ChLC材料n=1.55。在器件10中,因此,最高折射率步階發生於高折射率氧化銦錫(ITO)透明電極與聚對苯二甲酸乙二(醇)酯(PET)基板或ChLC之間之界面上。器件10包含兩個ITO/PET界面及兩個ITO/ChLC界面。取決於照明及檢視幾何,來自此等界面之寬頻菲涅耳反射可能超過該ChLC的反射性,使顯示器的性能大幅降級。
相比較而言,本發明之實施例的電極設計同時產生很好的光學及電學性能。該電極設計中的介入層係具有導電路徑之一透明或半透明層,該等導電路徑實現該兩個導電層之間之電接觸。可藉由控制該介入層之厚度及沈積條件而自然形成該等導電路徑。亦可調整離基板最近的第一導電層之化學及物理屬性,以致使能夠藉由改變介入層之潤濕屬性而形成此等導電路徑,使得介入層為不連續以允許鄰近層之間的電接觸。或者,可使用諸如雷射剝蝕、離子轟擊或濕式/乾式蝕刻之技術建立該等導電路徑。
可使用氣相沈積技術(諸如濺鍍、電子束及熱蒸鍍)而沈積該介入層。亦可用溶液塗佈形成該介入層。亦可使用一超障壁膜製程,其中將一單體蒸鍍於該基板上並在原位固化。超障壁膜包含多層膜,該等多層膜係例如藉由順序地真空沈積兩種無機介電材料於一玻璃或其他合適之基板上的多個層中而製成,或者為無機材料及有機聚合物之交替層,如美國專利第5,440,446號、第5,877,895號及第6,010,751號中所描述,該等所有專利係如同被充分闡述一般以引用的方式併入本文中。
一實施例係呈現為圖3之一器件電極40。此電極包含兩個高折射率TCO或半透明導電氧化物導電層42及50,該兩個導電層42及50係藉由具有導電路徑之一低折射率透明或半透明層46所分離,該等導電路徑包括延伸穿過透明層46中之孔隙48以連接該等電極42及50之導電鏈路44。基板52為器件提供支撐。分開繪示該等層以說明原理。
在另一實施例中,如圖4之器件電極54中所示,該介入層係一透明或半透明導體,其折射率低於其任意側上之導電層之折射率。在電極54中,該介入導電層58可在該兩個相鄰之TCO或半透明導電氧化物導電層56與60之間提供連續導電路徑。基板62為顯示器提供支撐。該介入層58可包括經溶液塗佈或電沈積之一導電聚合物。該介入層58亦可為一氣相沈積透明導體。導電聚合物包含以下例示性材料:聚苯胺、聚呲咯、聚噻吩及PEDOT/PSS(聚(3,4-二氧乙基噻吩)/聚苯乙烯磺酸)。該等導電層之組合厚度受限於片電阻需求,同時針對所要之光學屬性來最佳化該等個別層之厚度。
在又另一實施例中,如圖5之器件電極64所示,該介入層包括散佈於一黏結劑中之導電顆粒。黏結劑68中之導電顆粒70在該等TCO或半透明導電氧化物之導電層66及72之間提供導電路徑。一基板74為器件提供支撐。該黏結劑可為導電的或絕緣的。該等導電顆粒可為有機、無機或金屬。可藉由改變該黏結劑及該等導電顆粒之體積分率而調整該介入層之折射率。
基質及植入之導電奈米顆粒可包含以下各者。該基質可包含任何透明或半透明(導電或絕緣)聚合物(例如丙烯酸酯、甲基丙烯酸酯,或以上所列之該等導電聚合物),或導電的(例如以上所列之TCO)或絕緣的(SiO2 、氮化矽(Six Ny )、氧化鋅(Zn O)、氧化鋁(Al2 O3 )或氟化鎂(MgF2 ))透明或半透明無機材料。該等導電奈米顆粒可包含諸如以上所列之導電聚合物,或金屬(例如銀、金、鎳、鉻)。若該基質導電則該等奈米顆粒可為絕緣,特定言之,其等可為以上所列之絕緣材料的奈米顆粒(例如SiO2 、氮化矽、氧化鋅或其他絕緣材料)。
雖然上述實施例包含由一介入層所分離的兩個透明或半透明導電層,但取決於所要之光學及電學屬性,可增添額外的透明或半透明導電層及介入層,如圖6及圖7所示。圖6及圖7所示之器件電極76及90包含作為一單一電極發揮作用的以下層:多個透明或半透明導電層78、82及86;位於該等導電層之間的介入透明或半透明層80及84;及一基板88。亦可增添額外的導電層及介入層,使得該電極具有經最佳化或經調諧以用於一特定器件的任意數目之層。此外,當該電極用於一顯示器件時,取決於切換機制(例如,受電流或電場驅動),與顯示媒體接觸的層可為絕緣的或導電的,諸如圖6所示之導電層78或圖7所示之絕緣層92。
對於三色ChLC顯示器,每一色彩之電極可經設計或調諧成適於一特定波長範圍以最小化界面反射。表1包含一ChLC顯示器件中用於個別色彩之一經最佳化的電極構造(RGB ChLC材料層)的以奈米(nm)為單位之厚度。
實例
製成具有如圖4中所示之三層電極設計的基板。該介入層係由使用上文確定的超障壁製程沈積之丙烯酸酯聚合物組成,該兩個導電層係由濺射沈積之ITO組成。具有不同之介入層及ITO層厚度的三層式電極係製造於一卷0.005英吋厚之PET上,如表2中確定。
該等個別層之厚度係由該膜橫跨ITO及超障壁膜沈積源之速度所決定,該速度之單位為英尺每分鐘(fpm)。越快之速度產生越薄之層。此等樣品之片電阻之測量係使用測量該兩個ITO層之組合導電性的非接觸式探針(Delcom)及測量頂端曝光表面之導電性的表面接觸4-探針儀器。兩種測量技術在測量誤差內產生了相等之片電阻值,指示該介入層允許該兩個相鄰ITO層之間的電接觸。
將使用具有折射率匹配之三層電極之基板,與使用具有單層折射率不匹配之電極之基板製成的全彩RGB、ChLC器件相比較。寬頻、界面反射對於折射率不匹配之電極係更為明顯的。相對於具有折射率匹配之電極的器件而言,此等反射使色飽和度降級。
具有折射率匹配之電極之器件的色域比具有折射率不匹配之電極之器件的大三倍。相對於具有折射率匹配之電極之器件,更強的界面反射亦使具有折射率不匹配之電極之器件的黑階降級。結果,定義為白狀態對黑狀態之亮度(CIE Y)之比率的對比度對於具有折射率匹配之電極之器件係更高的。
器件亦係由三層式電極基板製成,其中該介入層係由取代超障壁膜層之一無機材料SiO2 組成。三層式電極由ITO(20nm)/SiO2 (42nm)/ITO(20nm)組成,其等係濺鍍於5密耳(mil)之PET(Dupont Teijin,ST-504)上。當併入於ChLC、RGB器件中時,此等基板也展現出經改良的電學及光學屬性。對於具有折射率匹配之三層式電極的器件,色飽和度(色域)及對比度皆係明顯更高。就該三層式折射率匹配之電極而言,色域大四倍以上,且對比度高五倍以上。
三層式電極設計也實現低的片電阻與良好的光學性能之結合。每個介入之低折射率層都允許相鄰透明導電層之間之電接觸。結果多層式電極之導電性係由所有導電層之組合厚度所決定。一顯示器係由具有該三層式電極之基板製成。與使用單層電極之基板相比,此基板之較低的片電阻(約100歐姆/平方)實現極佳的顯示一致性,在橫跨顯示器之圖案內無褪色。可觀察到色飽和度及顯示一致性兩者皆極佳。
10...單色ChLC顯示器
12...基板
14...電極
16...ChLC材料
18...電極
20...基板
22...黑吸收體
24...界面反射
26...反射
28...界面反射
30...先前技術電極
32...TCO層
34...介電聚合物連續層
36...TCO層
38...基板
40...器件電極
42...高折射率導電層
44...導電鏈路
46...低折射率介入層
48...孔隙
50...高折射率導電層
52...基板
54...器件電極
56...TCO或半透明導電氧化物導電層
58...介入導電層
60...TCO或半透明導電氧化物導電層
62...基板
64...器件電極
66...TCO或半透明導電氧化物之導電層
68...黏結劑
70...導電顆粒
72...TCO或半透明導電氧化物之導電層
74...基板
76...器件電極
78...透明或半透明導電層
80...介入透明或半透明導電層
82...透明或半透明導電層
84...介入透明或半透明導電層
86...透明或半透明導電層
88...基板
90...器件電極
92...絕緣層
附圖係併入於本說明書中且構成本說明書之一部分,並與[實施方式]一起解釋本發明之優點及原理。在圖中,
圖1係一單色ChLC顯示器構造之一透視圖;
圖2係用於ChLC顯示器之一先前技術電極之圖式;
圖3係含一具有導電路徑之一介入層之ChLC顯示電極之圖式;
圖4係具有一介入導電層之一ChLC顯示電極之圖式;
圖5係具有一介入層之一ChLC顯示電極之圖式,該介入層具有散佈於一黏結劑中之導電顆粒;
圖6係具有多個介入層及待與一顯示媒體接觸之一絕緣層的一ChLC顯示電極之圖式;及
圖7係具有多個介入層及待與一顯示媒體接觸之一導電層的一ChLC顯示電極之圖式。
40...器件電極
42...高折射率導電層
44...導電鏈路
46...低折射率介入層
48...孔隙
50...高折射率導電層
52...基板

Claims (21)

  1. 一種透明或半透明導電物件,用於具有用於以電子方式顯示內容之顯示區之顯示器件,該物件包括按以下順序配置之層:一第一透明或半透明導電層;一第二透明或半透明導電層;一透明或半透明介入層,其位於該第一導電層與該第二導電層之間,其中該介入層包括一介電材料;及一基板;其中該介入層包含延伸穿過介於該第一導電層與該第二導電層之間且接觸該第一導電層與該第二導電層的該介入層之透明或半透明導電路徑,其中該第一導電層與該第二導電層各包括一材料片,且該第一導電層實質上與該第二導電層共同延伸,且該介入層實質上與該第一導電層及該第二導電層共同延伸,其中該導電物件係經組態以覆蓋該顯示器件之全部該等顯示區。
  2. 如請求項1之導電物件,其中該第一導電層與該第二導電層及該介入層之厚度及光學折射率係經選擇以提供該顯示器件中的一特定的光學反射減少量。
  3. 如請求項1之導電物件,其中該第一導電層及該第二導電層每一者包括一透明或半透明導電氧化物。
  4. 如請求項1之導電物件,其中該基板包括聚對苯二甲酸 乙二(醇)酯。
  5. 如請求項1之導電物件,其中該基板包括聚碳酸酯。
  6. 如請求項1之導電物件,其中該等導電路徑包括延伸穿過介於該第一導電層與該第二導電層之間的孔隙之導電鏈路。
  7. 如請求項1之導電物件,其進一步包括一絕緣層,該絕緣層係位於在與該介入層相反側上的該第一導電層上。
  8. 如請求項1之導電物件,其進一步包括一第三透明或半透明導電層及位於該第一導電層與該第三導電層之間之另一透明或半透明介入層。
  9. 如請求項1之導電物件,其中該物件包括一電極。
  10. 如請求項1之導電物件,其中該等透明或半透明導電路徑係由一與該第一透明或半透明導電層及該第二透明或半透明導電層相同的材料所組成。
  11. 一種顯示器件,具有用於以電子方式顯示內容之多個顯示區,該顯示器件包括按以下順序配置之層:一第一基板;一第一電極;一顯示材料,用於在該等顯示區中以電子方式顯示內容,其中該顯示材料包含一膽固醇型液晶材料;一第二電極;及一第二基板;其中該第一電極及該第二電極各包括:一第一透明或半透明導電層; 一第二透明或半透明導電層;及位於該第一導電層與該第二導電層之間的一透明或半透明介入層,其中該介入層包括一介電材料,其中該介入層包含延伸穿過介於該第一導電層與該第二導電層之間且接觸該第一導電層與該第二導電層的該介入層之透明或半透明導電路徑,其中該第一導電層與該第二導電層各包括一材料片,且該第一導電層實質上與該第二導電層共同延伸,且該介入層實質上與該第一導電層及該第二導電層共同延伸,其中該第一電極及該第二電極之每一者覆蓋該顯示器件之全部該等顯示區。
  12. 如請求項11之器件,其進一步包括一黑吸收體,該黑吸收體係定位為在與該第二電極相反側上鄰近於該第二基板。
  13. 如請求項11之器件,其中該第一導電層及該第二導電層各包括一透明或半透明導電氧化物。
  14. 如請求項11之器件,其中該基板包括聚對苯二甲酸乙二(醇)酯。
  15. 如請求項11之器件,其中該基板包括聚碳酸酯。
  16. 如請求項11之器件,其中該等導電路徑包括延伸穿過該第一導電層與該第二導電層之間的孔隙之導電鏈路。
  17. 如請求項11之器件,其進一步包括位於該第一導電層與該顯示材料之間之一絕緣層。
  18. 如請求項11之器件,其中該第一導電層之厚度與該第二導電層之厚度實質上係相同的。
  19. 如請求項11之器件,其中該等透明或半透明導電路徑係由一與該第一透明或半透明導電層及該第二透明或半透明導電層相同的材料所組成。
  20. 一種透明或半透明導電物件,用於具有用於透射可見光之透射區之一非顯示器件,該物件包括按以下順序配置之層:一第一透明或半透明導電層;一第二透明或半透明導電層;一透明或半透明介入層,其位於該第一導電層與該第二導電層之間,其中該介入層包括一介電材料;及一基板;其中該介入層包含延伸穿過介於該第一導電層與該第二導電層之間且接觸該第一導電層與該第二導電層的該介入層之透明或半透明導電路徑,其中該第一導電層與該第二導電層各包括一材料片,且該第一導電層實質上與該第二導電層共同延伸,且該介入層實質上與該第一導電層及該第二導電層共同延伸,其中該導電物件係經組態以覆蓋該非顯示器件之全部該等透射區。
  21. 如請求項20之導電物件,其中該等透明或半透明導電路徑係由一與該第一透明或半透明導電層及該第二透明或半透明導電層相同的材料所組成。
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WO2009155164A3 (en) 2010-03-11
KR20110030588A (ko) 2011-03-23
US9402305B2 (en) 2016-07-26
CN105425479A (zh) 2016-03-23
US20090316060A1 (en) 2009-12-24
US20120229746A1 (en) 2012-09-13
CN102057318A (zh) 2011-05-11
EP2300869A2 (en) 2011-03-30
US20160309583A1 (en) 2016-10-20
US20150008023A1 (en) 2015-01-08
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US8854589B2 (en) 2014-10-07

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