TWI493290B - 低釋氣性光阻組合物 - Google Patents
低釋氣性光阻組合物 Download PDFInfo
- Publication number
- TWI493290B TWI493290B TW098129915A TW98129915A TWI493290B TW I493290 B TWI493290 B TW I493290B TW 098129915 A TW098129915 A TW 098129915A TW 98129915 A TW98129915 A TW 98129915A TW I493290 B TWI493290 B TW I493290B
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- TW
- Taiwan
- Prior art keywords
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- group
- repeating unit
- polymer
- photoresist composition
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F36/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
- C08F36/02—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds
- C08F36/20—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds unconjugated
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/16—Halogens
- C08F12/20—Fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
- C08F12/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/16—Halogens
- C08F212/20—Fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/206,065 US7951525B2 (en) | 2008-09-08 | 2008-09-08 | Low outgassing photoresist compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201022849A TW201022849A (en) | 2010-06-16 |
TWI493290B true TWI493290B (zh) | 2015-07-21 |
Family
ID=41110952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098129915A TWI493290B (zh) | 2008-09-08 | 2009-09-04 | 低釋氣性光阻組合物 |
Country Status (7)
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8323868B2 (en) * | 2009-11-06 | 2012-12-04 | International Business Machines Corporation | Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof |
EP2503230A1 (en) | 2011-03-22 | 2012-09-26 | Solvay Specialty Polymers Italy S.p.A. | A led lighting device with an adjustable spatial distribution of the emitted light |
CN103987806B (zh) | 2011-12-14 | 2017-02-08 | 三井化学东赛璐株式会社 | 粘接性树脂组合物、叠层体及自剥离方法 |
JP6051013B2 (ja) * | 2012-10-26 | 2016-12-21 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、高分子化合物、化合物 |
WO2014098076A1 (ja) * | 2012-12-19 | 2014-06-26 | 日産化学工業株式会社 | 環状ジエステル基を有するシリコン含有レジスト下層膜形成組成物 |
JP6052207B2 (ja) * | 2014-03-04 | 2016-12-27 | 信越化学工業株式会社 | ポジ型レジスト材料及びこれを用いたパターン形成方法 |
CN112661741A (zh) * | 2020-12-23 | 2021-04-16 | 上海博栋化学科技有限公司 | 一种含米氏酸结构的光刻胶树脂单体及其合成方法 |
CN115403976B (zh) * | 2022-08-19 | 2023-04-18 | 嘉庚创新实验室 | 一种抗反射涂层组合物 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5932391A (en) * | 1995-08-18 | 1999-08-03 | Kabushiki Kaisha Toshiba | Resist for alkali development |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4189323A (en) | 1977-04-25 | 1980-02-19 | Hoechst Aktiengesellschaft | Radiation-sensitive copying composition |
JPS5559181A (en) * | 1978-10-30 | 1980-05-02 | Mitsui Petrochem Ind Ltd | Preparation of alkenyl-malonic acid cyclic ester |
US4284706A (en) | 1979-12-03 | 1981-08-18 | International Business Machines Corporation | Lithographic resist composition for a lift-off process |
US4442197A (en) | 1982-01-11 | 1984-04-10 | General Electric Company | Photocurable compositions |
EP0153904B1 (de) | 1984-02-10 | 1988-09-14 | Ciba-Geigy Ag | Verfahren zur Herstellung einer Schutzschicht oder einer Reliefabbildung |
US4603101A (en) | 1985-09-27 | 1986-07-29 | General Electric Company | Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials |
US5403908A (en) * | 1989-10-06 | 1995-04-04 | Idemitsu Kosan Company, Limited | Aryl styrene-based copolymer |
DE4106357A1 (de) * | 1991-02-28 | 1992-09-03 | Hoechst Ag | Strahlungsempfindliche polymere mit 2-diazo-1,3-dicarbonyl-gruppen, verfahren zu deren herstellung und verwendung in einem positiv arbeitenden aufzeichnungsmaterial |
US5272232A (en) * | 1992-01-21 | 1993-12-21 | The United States Of America As Represented By The Secretary Of Commerce | Hydroxyfluoroalkyl-substituted styrenes and polymeric compositions containing same |
US5241007A (en) * | 1992-01-21 | 1993-08-31 | The United Statets Of America As Represented By The Secretary Of Commerce | Hydroxyfluoroalkyl-substituted styrenes and polymeric compositions containing same |
US5243053A (en) | 1992-02-26 | 1993-09-07 | Eli Lilly And Company | Methylene meldrum's acid precursors |
US5344742A (en) | 1993-04-21 | 1994-09-06 | Shipley Company Inc. | Benzyl-substituted photoactive compounds and photoresist compositions comprising same |
JP3116751B2 (ja) | 1993-12-03 | 2000-12-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JPH07191463A (ja) | 1993-12-27 | 1995-07-28 | Fujitsu Ltd | レジストおよびこれを使った半導体装置の製造方法 |
US5580694A (en) | 1994-06-27 | 1996-12-03 | International Business Machines Corporation | Photoresist composition with androstane and process for its use |
KR0164981B1 (ko) * | 1995-11-28 | 1999-03-20 | 김흥기 | 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료 |
ATE244904T1 (de) * | 1995-12-21 | 2003-07-15 | Wako Pure Chem Ind Ltd | Polymerzusammensetzung und rezistmaterial |
JP2000508677A (ja) * | 1996-12-30 | 2000-07-11 | イドロ―ケベック | マロン酸ニトリル誘導体アニオン塩、及びイオン伝導性材料としてのそれらの使用 |
KR19990081722A (ko) | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
JP3763693B2 (ja) * | 1998-08-10 | 2006-04-05 | 株式会社東芝 | 感光性組成物及びパターン形成方法 |
JP3840052B2 (ja) * | 1998-08-10 | 2006-11-01 | 株式会社東芝 | レジスト用樹脂 |
US6303266B1 (en) | 1998-09-24 | 2001-10-16 | Kabushiki Kaisha Toshiba | Resin useful for resist, resist composition and pattern forming process using the same |
US6365321B1 (en) * | 1999-04-13 | 2002-04-02 | International Business Machines Corporation | Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations |
EP1240552B1 (en) * | 1999-08-13 | 2012-09-19 | Intellectual Ventures Holding 40 LLC | Water-processable photoresist compositions |
KR100653302B1 (ko) * | 1999-09-08 | 2006-12-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 스티렌 유도체 |
KR20010045418A (ko) * | 1999-11-05 | 2001-06-05 | 박종섭 | 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물 |
US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
KR101384171B1 (ko) * | 2006-09-29 | 2014-04-10 | 후지필름 가부시키가이샤 | 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
DE102008011035A1 (de) * | 2007-02-28 | 2008-09-18 | Sumitomo Chemical Co., Ltd. | Dienpolymer und Verfahren zu seiner Herstellung |
-
2008
- 2008-09-08 US US12/206,065 patent/US7951525B2/en not_active Expired - Fee Related
-
2009
- 2009-07-16 WO PCT/EP2009/059160 patent/WO2010025983A1/en active Application Filing
- 2009-07-16 EP EP09780715.0A patent/EP2285845B1/en not_active Not-in-force
- 2009-07-16 JP JP2011525481A patent/JP5735915B2/ja not_active Expired - Fee Related
- 2009-07-16 CN CN2009801347011A patent/CN102143981B/zh not_active Expired - Fee Related
- 2009-07-16 KR KR1020117002152A patent/KR101589776B1/ko not_active IP Right Cessation
- 2009-09-04 TW TW098129915A patent/TWI493290B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5932391A (en) * | 1995-08-18 | 1999-08-03 | Kabushiki Kaisha Toshiba | Resist for alkali development |
Non-Patent Citations (1)
Title |
---|
"Dendronized Polymer Organogels from Click Chemistry: A Remarkable Gelation Property Owing to Synergistic Functional-Group Binding and Dendritic Size Effects", Kwun-Ngai Lau, et al., Angewandte Chemie,International Edition,Vol 120,Issue 36, P.7018-7022, 24 JUL 2008 published online * |
Also Published As
Publication number | Publication date |
---|---|
JP2012502123A (ja) | 2012-01-26 |
US7951525B2 (en) | 2011-05-31 |
CN102143981A (zh) | 2011-08-03 |
TW201022849A (en) | 2010-06-16 |
JP5735915B2 (ja) | 2015-06-17 |
WO2010025983A1 (en) | 2010-03-11 |
EP2285845B1 (en) | 2013-09-04 |
CN102143981B (zh) | 2013-05-15 |
US20100062368A1 (en) | 2010-03-11 |
KR20110065438A (ko) | 2011-06-15 |
KR101589776B1 (ko) | 2016-01-28 |
EP2285845A1 (en) | 2011-02-23 |
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