TWI487156B - 相位變化記憶體結構 - Google Patents

相位變化記憶體結構 Download PDF

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Publication number
TWI487156B
TWI487156B TW097131951A TW97131951A TWI487156B TW I487156 B TWI487156 B TW I487156B TW 097131951 A TW097131951 A TW 097131951A TW 97131951 A TW97131951 A TW 97131951A TW I487156 B TWI487156 B TW I487156B
Authority
TW
Taiwan
Prior art keywords
layer
phase change
electrode
columns
heater
Prior art date
Application number
TW097131951A
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English (en)
Chinese (zh)
Other versions
TW200929632A (en
Inventor
慕瑞黎赫 拉瑪琴倫
莫錢特 圖沙Ｐ
羅 拉傑許Ａ
Original Assignee
飛思卡爾半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 飛思卡爾半導體公司 filed Critical 飛思卡爾半導體公司
Publication of TW200929632A publication Critical patent/TW200929632A/zh
Application granted granted Critical
Publication of TWI487156B publication Critical patent/TWI487156B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW097131951A 2007-09-28 2008-08-21 相位變化記憶體結構 TWI487156B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/864,246 US7811851B2 (en) 2007-09-28 2007-09-28 Phase change memory structures

Publications (2)

Publication Number Publication Date
TW200929632A TW200929632A (en) 2009-07-01
TWI487156B true TWI487156B (zh) 2015-06-01

Family

ID=40507136

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097131951A TWI487156B (zh) 2007-09-28 2008-08-21 相位變化記憶體結構

Country Status (4)

Country Link
US (2) US7811851B2 (enExample)
JP (1) JP5429644B2 (enExample)
TW (1) TWI487156B (enExample)
WO (1) WO2009045635A2 (enExample)

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US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
US8043888B2 (en) * 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US8637847B2 (en) * 2011-12-09 2014-01-28 Micron Technology, Inc. Memory cells having a plurality of heaters
CN103296202B (zh) * 2012-03-02 2015-04-29 中芯国际集成电路制造(上海)有限公司 相变存储器及其制作方法
CN103378288B (zh) * 2012-04-28 2015-01-21 中芯国际集成电路制造(上海)有限公司 相变存储器的形成方法
US8951892B2 (en) 2012-06-29 2015-02-10 Freescale Semiconductor, Inc. Applications for nanopillar structures
US10937961B2 (en) 2018-11-06 2021-03-02 International Business Machines Corporation Structure and method to form bi-layer composite phase-change-memory cell
US12615969B2 (en) 2023-01-06 2026-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Phase-change memory device with tapered thermal transfer layer

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US20040164290A1 (en) * 2003-02-24 2004-08-26 Ji-Hye Yi Phase-change memory devices with a self-heater structure
TW200625705A (en) * 2004-09-27 2006-07-16 Koninkl Philips Electronics Nv Electric device with nanowires comprising a phase change material
US20070096071A1 (en) * 2005-11-03 2007-05-03 Cswitch Corporation Multi-terminal phase change devices

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US6917532B2 (en) * 2002-06-21 2005-07-12 Hewlett-Packard Development Company, L.P. Memory storage device with segmented column line array
US7149155B2 (en) * 2002-09-20 2006-12-12 Hewlett-Packard Development Company, L.P. Channeled dielectric re-recordable data storage medium
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US7488967B2 (en) * 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
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KR100723839B1 (ko) 2005-09-01 2007-05-31 한국전자통신연구원 관통전극 구조를 포함하는 상변화 메모리 소자 및 그제조방법
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US20040164290A1 (en) * 2003-02-24 2004-08-26 Ji-Hye Yi Phase-change memory devices with a self-heater structure
TW200625705A (en) * 2004-09-27 2006-07-16 Koninkl Philips Electronics Nv Electric device with nanowires comprising a phase change material
US20070096071A1 (en) * 2005-11-03 2007-05-03 Cswitch Corporation Multi-terminal phase change devices

Also Published As

Publication number Publication date
US8097873B2 (en) 2012-01-17
US20110001113A1 (en) 2011-01-06
JP2010541246A (ja) 2010-12-24
WO2009045635A3 (en) 2009-05-22
JP5429644B2 (ja) 2014-02-26
WO2009045635A2 (en) 2009-04-09
US20090085024A1 (en) 2009-04-02
TW200929632A (en) 2009-07-01
US7811851B2 (en) 2010-10-12

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