TWI480413B - Low - pressure vapor deposition of thin film polymer - Google Patents

Low - pressure vapor deposition of thin film polymer Download PDF

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TWI480413B
TWI480413B TW098117956A TW98117956A TWI480413B TW I480413 B TWI480413 B TW I480413B TW 098117956 A TW098117956 A TW 098117956A TW 98117956 A TW98117956 A TW 98117956A TW I480413 B TWI480413 B TW I480413B
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substrate
temperature
gas
pressure
intake mechanism
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TW098117956A
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TW201005119A (en
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Markus Gersdorff
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Aixtron Ag
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Life Sciences & Earth Sciences (AREA)
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  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
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Description

薄膜聚合物之低壓氣相沉積法
本發明係有關一種沉積一或多層薄膜之方法，其使一尤其是由聚合物構成的製程氣體與一載氣一起由一進氣機構輸入一沉積室中，以在一放置在基板座之承載面上與進氣機構有一距離之基板表面上沉積一層薄膜，尤其是聚合物薄膜。
US 4,945,856提出一種方法，其使一固體對二甲苯轉變為氣態。該氣體經一氣體管路而被輸送至一熱解室中。該二聚物在其內部被分解成一單體。該單體經一氣體管路而被載氣攜帶至具一進氣機構之反應室中，而聚合在放置於散熱基板座上的基板上。US 3,288,728使用對二甲苯共聚物，其可是聚對二甲苯族之C-,N-,D-聚合物，其在室溫下為固態粉末狀或液態。
Korean J.Chem.Eng.,19(4),722-727(2002)「Characterization of Parylene Deposition Process for the Passivation of Organic Light Emmiting Diodes」提出具有聚對二甲苯及其衍生物薄膜之OLED。使不同的大面積基板在真空中塗佈聚對二甲苯亦為已知。例如使玻璃、金屬、紙張、塗料、塑膠、陶瓷、鐵氧體及矽由氣相凝結而塗佈一層無孔透明聚合物薄膜，以利用聚合物薄膜之疏水性、化學阻抗性及電絕緣性。
US 5,554,220提出一種所謂的OVPD製程，其可製造所謂的OLED。該處之原材料為DAST。
DE 101 36 858提出一種製造有塗層基板之裝置及方法，其薄膜使用一凝結法而被塗佈在基板上。基板可為玻璃、薄膜或塑膠。使用該處之裝置可製造發光元件，尤其是薄膜元件，例如OLED。該有機薄膜大面積地使用一光罩而在基板上沉積出一圖案。該裝置具有一控溫進氣裝置，其由一大面積的氣體分佈器構成，以及一位在其下方的散熱基板座，以承載一基板。
EP 0 862 664 B1提出一種在半導體基板上沉積聚對二甲苯之方法及裝置。聚對二甲苯在一蒸發室中被蒸發。被蒸發之聚對二甲苯在一熱解室中被分解。分解產物經進氣機構而被輸入反應室中，並在被冷卻至15℃以下的基板上構成一薄膜。基板座可被一加熱裝置加熱至400℃。
US 2006/0113507 A1同樣提出一種聚對二甲苯之沉積方法，其要求真空條件。該處需在一步驟中沉積出一層液晶聚合物膜。該製程在一三區反應器中進行，該反應器具有一昇華區、一熱解區及一凝結區，工作溫度為450℃至700℃。昇華在15℃至100℃之溫度間進行。凝結及同時之聚合在210℃至290℃之溫度間進行。
US 6,709,715 B1、US 6,362,115 B1及US 5,958,510提出一種沉積聚對二甲苯之方法及裝置，其首先使一聚合物原材料被蒸發，然後將其分解，分解產物經一大面積的氣體分佈器而被輸入一被加熱之反應室中，並凝結在基板上，該基板放置在散熱之基板座上。
US 3,908,046提出一種對二甲苯聚合物之沉積方法，其同樣包含昇華、熱解及沉積之製程步驟。該處之基板溫度被保持在25℃至30℃之間。
沉積OLED或聚合物之塗佈方法在一沉積室中進行，其內部存在一具垂直溫度梯度之氣相。進氣機構之溫度高於基板。後者藉與基板座之接觸而被散熱。基板座需排出由進氣機構輻射至基板的熱。由於塗佈製程在次毫巴(Sub-mbar)之壓力下進行，故熱只能經由基板與基板座承載面之接觸部分被排出。兩互相貼合的面，即承載面與基板下側，可進行熱傳導的接觸通常為不連續的。由於無法避免之不平坦，兩面之間可能出現縫隙，該縫隙寬度可達100μm。製程壓力小於1mbar時，該縫隙無法進行熱對流傳輸。如此使得欲塗佈之基板表面被進氣機構之輻射熱加熱，而明顯高於基板座溫度。
本發明之目的在於提供一種塗佈製程，其可在基板溫度略高於基板座承載面溫度下進行。
本目的由申請專利範圍所述之本發明達成，其中各項申請專利範圍可為獨立或與其他項申請專利範圍組合。
首先使進氣機構及/或承載面被控溫，使得承載面溫度低於進氣機構溫度，其中在製程氣體進入沉積室之前使沉積室具一第一壓力，該壓力較佳在毫巴範圍，放置在承載面上的基板因被基板座散熱而穩定保持在一只略高於承載面溫度但明顯低於進氣機構溫度的基板溫度下，然後將沉積室中的壓力降低至一製程壓力，該壓力較佳在次毫巴範圍，達到該製程壓力時，使製程氣體進入沉積室中。本方法尤其適用於沉積一或多層聚合物材料，例如對二甲苯之薄膜。一固態或液態，尤其是聚合物，特別是二聚物，原材料在一蒸發室中被蒸發，該蒸發之原材料，尤其是二聚體，被一載氣由蒸發室經一載氣管路輸送至一熱解室中，而在該熱解室中被熱解，尤其是分解成單體。該分解產物，尤其是單體，被載氣由熱解室攜帶至一沉積室中，並經一進氣機構而流入該沉積室中，而聚合在放置於基板座承載面上之基板表面而構成一薄膜。載氣與未被聚合之分解產物，尤其是單體，經由一排氣口被排出反應室。該方法亦適合於沉積OLED。進行OVPD製程時，通常為液態或固態之原材料在所謂的材料源或蒸發器中被轉變為氣態，然後利用一載氣經一氣體管路將其輸入一沉積室中。該處設有一進氣機構。該進氣機構，尤其是由進氣機構構成的氣體流出面，較佳為鍍金或至少高度拋光。氣體流出面鍍金之高度拋光表面之放射率ε小於0.04。如此使得溫度為150℃至250℃之加熱進氣機構的輻射功率被最小化。雖然熱被傳輸至基板，但需被散熱之基板座排出。後者的溫度被控制在-30℃至100℃之間。承載面與進氣機構的溫差至少為50℃，甚至至少為100℃。本發明尚有關在真正的塗佈製程之前預熱基板的方法。塗佈製程在次毫巴之壓力範圍進行，亦即壓力為0.5至0.05mbar，總壓力較佳約為0.1mbar。塗佈製程之前的預熱在沉積室總壓力>1mbar之下進行，例如總壓力為約5mbar。基板被放入反應室後，一載氣，其例如為一稀有氣體或另一反應被動之惰性氣體，經由進氣機構進入反應室中，然後由排氣口流出反應室。其可被一真空幫浦吸出。利用一設在真空幫浦前方的閥門可調整反應室中的製程壓力。首先設定一大於1mbar，較佳約為5mbar，之製程壓力，在該壓力下調整反應室中的溫度。亦即進氣機構及朝向承載面的氣體流出面被加熱至150℃至250℃之溫度。基板溫度則設在-30℃至100℃之基板溫度。在此壓力下氣體分子的自由路徑明顯小於基板下側與承載面間的縫隙寬度，故縫隙中產生熱對流傳輸，而使基板的熱傳輸至基板座。在該第一製程步驟中，基板溫度穩定且只略高於承載面溫度數度。基板溫度與基板座溫度之溫差小於10℃。基板表面的溫差最大為1℃。溫度之穩定可以高溫計或其他方法監測。可設一溫度感測器，以感測基板溫度輻射，而測量出其表面溫度。其他溫度，亦即進氣機構溫度及基板座溫度，可使用適當的測量元件測量，例如溫度計。達到一穩定狀態時，亦即基板表面溫度達到一預設值時，可使用真空幫浦前方的調整閥快速降低沉積室壓力。沉積室壓力通常可在2至10秒內達到一穩定製程壓力，其約為0.1mbar。在此製程壓力時載氣分子之平均自由路徑大於基板下側與承載面間的縫隙寬度。除了基板下側與承載面間的各接觸點之外，基板與基板座之間為隔熱狀態。如此使得被基板吸收來自進氣機構的輻射熱無法被適量排出，故基板與基板座之溫差持續升高。但沉積製程之成長率極高，使得成長時間只需數秒，例如1至4秒。由於成長時間短於10秒，故因失去熱對流傳輸而導致的基板增溫只在20秒之內。基板之熱容量足以忍受在此時間內出現的基板溫度升高。本發明方法使用之裝置使載氣由進氣機構氣體流出面上的氣體流出口流出，載氣及被載氣攜帶的製程氣體成為氣柱而被噴入反應室中。氣柱由複數個氣體流出孔進入反應室中，並彼此連接而構成涵蓋整個承載面的氣流而流向承載面。氣體流出面之面積大於承載面，尤其是基板的面積。進氣機構之輻射面亦具同樣大小。氣體流出面的輻射因放射率藉表面鍍金或高度拋光被最小化而降低至最小。製程氣體較佳為分解成單體的對二甲苯或經取代之對二甲苯，其可在基板表面沉積成一聚合物。成長速率為100nm/s至200nm/s。在此成長速率下可在數秒之內沉積出需要的薄膜厚度100nm至1000nm。
以下將依據附圖詳細說明本發明之實施例。
一未圖示出之氣體供應裝置提供一載氣，例如氦、氬或氮，其被一質流控制器10控制。該載氣經由一可被一閥門關閉的氣體管路11流入一蒸發室1中。蒸發室1中存放一液態或固態原材料。該原材料可為一聚合物，例如對二甲苯或經取代之對二甲苯，例如C-,N-,D-Para-Xylylene。該粉末或液體被加熱至材料源溫度50℃至200℃。在此溫度下二聚體原材料被蒸發，然後經一同樣可被一閥門14關閉的氣體管路13而攜帶至一熱解室2中。熱解室2中的溫度為350℃至700℃。在此溫度下二聚體被熱解成一單體。載氣與製程氣體經一被加熱之氣體管路15而被輸送至一進氣機構3的輸入端分佈器9中。
整個系統的流動阻力被適當設定，而使得熱解室中的氣壓低於1mbar。流動速度亦被適當設定，使得原材料停留在熱解室中的時間夠久，以便使原材料幾乎完全被分解。
元件符號17顯示一輸入管路，其同樣可將氣體輸入該輸入端分佈器9中。但管路17亦可只將載氣輸入該輸入端分佈器9中。可設一未圖示出之排放/運轉系統(Vent-/Run-System)，以穩定進入輸入端分佈器9之前的氣流。
進氣機構3為蓮蓬頭狀，具有一中心室。氣體被輸入端分佈器9平均分佈而進入該室中。室的底部可由一板體構成，其具有氣體流出孔6，其為篩孔狀並平均分布。板體下側構成一氣體流出面3'，其內部設有加熱線或加熱通道19，以使一電流或加熱液體通過。電阻式加熱裝置或其他加熱裝置可將進氣機構，尤其是氣體流出面3'，加熱至150℃至250℃的溫度。相同之氣體流出孔6的直徑被適當選擇，使得氣體流出孔的壓力損失小於0.5mbar。
氣體流出面3'下方距離A之處為一基板座4，該距離A遠小於氣體流出面3'之直徑或對角線。朝向氣體流出面3'並在一水平面上的基板座4之承載面4'的面積小於氣體流出面3'的面積。基板座4由一散熱塊構成並具通道18，可使散熱媒質通過。
氣體流出面3'與承載面4'之間的沉積室8在一反應器中，其殼體壁被標示為8'。後者具一裝卸閘門16及排氣口5，載氣與剩餘的製程氣體可被一真空幫浦抽出。
基板座4被散熱，使得承載面4'之溫度TS為0℃至-50℃。進氣機構3之溫度TG高於溫度TS至少50℃，尤其至少100℃。為最小化進氣機構3對基板座4的熱傳輸，至少氣體流出面3'被高度拋光，尤其是鍍金，使得放射率小於0.04。由高級鋼、鋁或銅製成的基板座4承載基板7。該基板位在氣體流出面3'下方距離25mm至50mm處。其可是一介電基板，亦可是一非介電基板，例如一顯示器、一矽晶圓、紙張或塑膠膜。
基板如為一平面撓性物體，則另放置在一基板載板上。可設一未圖示出之光罩，以在基板上塗佈一圖案。基板亦可被預先塗佈。
圖2顯示基板7之下側7'與基板座4之承載面4'的接觸。雖然兩個面基本上為平坦，但仍然無法避免在下側7'與承載面4'之間出現縫隙20。其係由於製造或熱變形所產生。該縫隙20之寬度在20μm至100μm之間。縫隙所占面積大於基板7之下側7'與承載面4'的接觸面積。故基板與基板座只有部分達到面接觸。
在典型的製程條件中進氣機構3之溫度TG2約為200℃，承載面4'之溫度TS在0℃至-50℃之間，尤其是約為0℃。基板7之表面溫度TD應儘可能只略高於承載面4'之溫度TS。溫差最大為10℃。溫度為200℃之氣體流出面3'的面積超出基板7的面積，故以熱輻射而將大量的熱能傳輸至基板7。輻射功率雖然藉氣體流出面3'鍍金表面的高光澤而被最小化，但仍然會將熱輸送至基板。該熱輸送需經大面積的熱傳導至基板座4而被散熱。基板7與基板座4之溫差需被最小化。
由於基板7與基板座4之直接接觸少，故大部份的熱經縫隙傳輸。製程壓力P2為典型的0.1mbar時，幾乎為隔熱，因氣體分子的自由路徑大於兩個彼此有一距離之表面7'及4'的熱對流。
故本發明在真正的塗佈製程之前把整個沉積裝置3、4，包括承載面4'上的基板7提高至壓力P1的穩定狀態，使得進氣機構3達到溫度TS，基板座4，尤其是承載面4'，達到溫度TS，基板7表面達到基板溫度TD。基板溫度TD只略高於溫度TS。溫差小於10℃。該溫度穩定化係利用使熱壓力大於1mbar，並約等於5mbar，亦即使氣體分子的自由路徑縮小，以確保基板7與承載面4'縫隙20中的熱對流。
達到該穩定狀態時，可藉助一設在真空幫浦前方的調整閥提高真空幫浦的吸力，使得沉積室8中的總壓力被降低到製程壓力P22至10秒。後者在次毫巴範圍，且約為0.1mbar。一達到製程壓力P2便開始進行真正的塗佈，其成長速率約為100nm/s，直到薄膜厚度達到約200nm。
此處需忍受的是，總壓力開始降低時基板7與基板座4之間的對流散熱停止，而使得基板7增溫。由於壓力降低及成長階段只持續數秒，故溫度升高可被忍受。
上述方法可塗佈大面積的基板。承載面4'的面積可例如為一平方米。
本發明方法之另一實施例為沉積所謂的OLED。此處亦使用一熱真空法。通常為液態或固態的原材料被存放在一熱容器中，即所謂的材料源。藉由蒸發可使原材料轉變為氣態，然後使用一載氣將其經氣體管路15、17輸入沉積室8中。該處設有進氣機構3以分散及控制載氣輸送的製程氣體。該製程氣體由氣體流出孔流入反應室8中，並凝結在被散熱的基板7上。後者被放置在一散熱基板座4上。沉積薄膜的溫度明顯低於200℃，因使用之原材料對溫度極不穩定。基板溫度TS具一較低值，進氣機構溫度TG則具一較高值，例如原材料之蒸發溫度。為避免基板表面因進氣機構3之熱輻射而被加熱至一較高值，在真正開始之前反應室被保持在壓力P1，其明顯高於製程壓力P2。在壓力P1時，基板下側與基板座上側之間的縫隙可使基板與基板座進行熱交換。製程在明顯較低的製程壓力P2下進行。在該製程壓力P2下基板下側與基板座上側之縫隙的熱傳輸明顯降低。
所有揭示特徵本身皆具有發明性質。本發明揭示之特徵完全包含於本案之申請專利範圍中。
1．．．蒸發室
2．．．熱解室
3．．．進氣機構
3'．．．氣體流出面
4．．．基板座
4'．．．承載面
5．．．排氣口
6．．．氣體流出孔
7．．．基板
7'．．．基板表面
8．．．沉積室
8'．．．殼體壁
9．．．輸入端分佈器
10．．．質流控制器
11．．．氣體管路
12．．．閥門
13．．．氣體管路
14．．．閥門
15．．．氣體管路
16．．．裝卸閘門
17．．．氣體管路
18．．．通道
19．．．通道
20．．．縫隙
A．．．距離
P1‧‧‧壓力
P2‧‧‧製程壓力
TD‧‧‧基板溫度
TG‧‧‧進氣機構溫度
TS‧‧‧承載面溫度
ε‧‧‧放射率
圖1係本發明塗佈裝置組件，尤其是沉積室內部結構之示意圖。
圖2係圖1部份II基板7之下側7'與基板座4之承載面4'縫隙的放大圖。
1．．．蒸發器
2．．．熱解室
3．．．進氣機構
3'．．．氣體流出面
4．．．基板座
4'．．．承載面
5．．．排氣口
6．．．氣體排出孔
7．．．基板
7'．．．基板表面
8．．．沉積室
8'．．．殼體壁
9．．．輸入端分佈器
10．．．質流控制器
11．．．氣體管路
12．．．閥門
13．．．氣體管路
14．．．閥門
15．．．氣體管路
17．．．氣體管路
18．．．通道
19．．．通道
A．．．距離

Claims (25)

  1. 一種在一基板(7)的表面(7')上沉積一層薄膜之方法，該基板(7)係放置在基板座(4)之承載面(4')上並進一步容納於一沉積室(8)中，該沉積室(8)係具有一進氣機構(3)，該方法包含：在製程氣體進入沉積室(8)之前使沉積室(8)具一第一壓力(P1)；在沉積室具第一壓力(P1)時，來自基板(7)之熱係流至基板座(4)而調整基板(7)之溫度(TD)，當穩定時，基板溫度(TD)係高於承載面(4')之溫度(TS)但低於進氣機構(3)之溫度(TG)；基板溫度(TD)穩定後，將沉積室(8)中的壓力從第一壓力(P1)降低至一製程壓力(P2)；沉積室(8)中的壓力達到該製程壓力(P2)後，藉由進氣機構(3)使製程氣體與載氣一起流入沉積室(8)中，以在基板(7)的表面(7')上沉積薄膜；及當製程氣體流入沉積室(8)時，(i)將熱自進氣機構(3)傳送至基板(7)及(ii)使熱自基板(7)流至基板座(4)以移除基板(7)之熱，藉由傳送至基板(7)之熱大於自基板(7)移除之熱而連續地增加基板溫度(TD)。
  2. 如申請專利範圍第1項之方法，其中，載氣及製程氣體係由進氣機構(3)之氣體流出面(3')之流出孔(6)流出，該氣體 流出面(3')為高度拋光且經鍍金。
  3. 如申請專利範圍第2項之方法，其中，進氣機構(3)以蓮蓬頭狀形成之氣體流出面(3')而被加熱。
  4. 如申請專利範圍第3項之方法，其中，進氣機構(3)被電熱加熱線或液體通過之通道(19)加熱。
  5. 如申請專利範圍第4項之方法，其中，電熱加熱線或液體通過之通道(19)係設在進氣機構(3)之構成氣體流出面(3')的面板中。
  6. 如申請專利範圍第1項之方法，其中，由散熱塊構成的基板座(4)被主動散熱。
  7. 如申請專利範圍第6項之方法，其中，進氣機構(3)之溫度(TG)高於承載面(4')之溫度(TS)至少50℃。
  8. 如申請專利範圍第7項之方法，其中，進氣機構(3)之溫度(TG)高於承載面(4')之溫度(TS)至少100℃。
  9. 如申請專利範圍第1項之方法，其中，氣體流出面(3')之溫度在150℃至250℃之間。
  10. 如申請專利範圍第9項之方法，其中，氣體流出面(3')之溫度約為200℃。
  11. 如申請專利範圍第1項之方法，其中，基板座之溫度在-30℃至100℃之間。
  12. 如申請專利範圍第11項之方法，其中，基板座之溫度為0℃以下。
  13. 如申請專利範圍第1項之方法，其中，製程壓力(P2)低於1mbar。
  14. 如申請專利範圍第13項之方法，其中，製程壓力(P2)在0.5mbar至0.05mbar之間。
  15. 如申請專利範圍第13項之方法，其中，製程壓力(P2)為0.1mbar。
  16. 如申請專利範圍第1項之方法，其中，基板溫度(TD)穩定時係低於100℃，且熱壓力(P1)高於1mbar。
  17. 如申請專利範圍第16項之方法，其中，基板溫度(TD)穩定時係低於10℃，且熱壓力(P1)約為5mbar。
  18. 如申請專利範圍第1項之方法，其中，製程氣體為一蒸發單體或聚合物原材料。
  19. 如申請專利範圍第18項之方法，其中，製程氣體為對二甲苯或經取代之對二甲苯。
  20. 如申請專利範圍第1項之方法，其中，製程氣體是液態或固態原材料，其凝結在基板(7)上作為形式為OLED之發光或光電薄膜。
  21. 一種沉積一或多層聚合物材料薄膜之方法，一聚合物形式之固體或液體原材料在一蒸發室(1)中被蒸發，原材料被一載氣由蒸發室(1)經一載氣管路(13)攜帶至一熱解室(2)，而在其中被熱解成單體，該單體被載氣由分解室(2)攜帶至一沉積室(8)中，並經一進氣機構(3)而流入沉積室(8) 中，而聚合在放置於基板座(4)之承載面(4')上之基板(7)的表面(7')上而構成一薄膜，載氣與未被聚合之單體可由反應室(8)一排氣口(5)流出，其特徵為：進氣機構(3)及/或承載面(4')被控溫，使得承載面(4')之溫度(TS)低於進氣機構(3)之溫度(TG)，在製程氣體進入沉積室(8)之前使沉積室具一第一壓力(P1)，放置在承載面(4')上的基板(7)因被基板座(4)散熱而穩定保持在一基板溫度(TD)下，該基板溫度(TD)係高於承載面(4')之溫度(TS)但低於進氣機構(3)之溫度(TG)，然後將沉積室(8)中的壓力(P1)降低至一製程壓力(P2)，達到該製程壓力(P2)時，使製程氣體進入沉積室(8)中，及當製程氣體流入沉積室(8)時，(i)將熱自進氣機構(3)傳送至基板(7)及(ii)使熱自基板(7)流至基板座(4)以移除基板(7)之熱，藉由傳送至基板(7)之熱大於自基板(7)移除之熱而連續地增加基板溫度(TD)。
  22. 如申請專利範圍第21項之方法，其中，該聚合物材料為對二甲苯。
  23. 如申請專利範圍第21項之方法，其中，該原材料為二聚物。
  24. 如申請專利範圍第21項之方法，其中，單體係與載氣一起由進氣機構(3)之氣體流出面(3')上的氣體流出孔(6)流出，而垂直流向基板表面(7')，緊密相鄰之「噴出氣柱」彼此連接而構成涵蓋整個承載面的氣流而流入反應室(8)，且 氣體流出孔(6)分佈在整個平行於承載面(4')的氣體流出面(3')上。
  25. 如申請專利範圍第21項之方法，其中，氣體流出面(3')之面積大於承載面(4')及基板的面積。
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010000447A1 (de) * 2010-02-17 2011-08-18 Aixtron Ag, 52134 Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte
CN103031535B (zh) * 2011-09-28 2015-12-09 核心能源实业有限公司 薄膜工艺设备及其制作方法
TWI458843B (zh) 2011-10-06 2014-11-01 Ind Tech Res Inst 蒸鍍裝置與有機薄膜的形成方法
US9299956B2 (en) * 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
DE102014115497A1 (de) * 2014-10-24 2016-05-12 Aixtron Se Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen
CN104716077A (zh) * 2015-03-25 2015-06-17 上海华力微电子有限公司 可控温加热式传送腔及其工艺装置和控温加热方法
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
KR102122639B1 (ko) * 2018-03-22 2020-06-15 (주)씨엔원 3차원 구조물 코팅장치
JP7093667B2 (ja) * 2018-04-11 2022-06-30 東京エレクトロン株式会社 成膜装置及び成膜方法
US20190386256A1 (en) * 2018-06-18 2019-12-19 Universal Display Corporation Sequential material sources for thermally challenged OLED materials
WO2020129702A1 (ja) * 2018-12-21 2020-06-25 国立大学法人 東京大学 有機電界発光素子
GB201913140D0 (en) * 2019-09-12 2019-10-30 Ucl Business Plc Methods and apparatuses for fabricating polymeric conformal coatings, parts coated with polymeric conformal coatings, and optical apparatus
US20220033958A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Evaporation source, vapor deposition apparatus, and method for coating a substrate in a vacuum chamber
CN116759297B (zh) * 2023-08-23 2023-11-03 上海陛通半导体能源科技股份有限公司 一种连续制备低温氮化硅薄膜中降低晶圆表面温度的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW379367B (en) * 1996-11-07 2000-01-11 Applied Materials Inc Method and apparatus for depositing a multilayered low dielectric constant film
US6133148A (en) * 1997-11-24 2000-10-17 Samsung Electronics Co., Ltd. Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3288728A (en) 1966-02-18 1966-11-29 Union Carbide Corp Para-xylylene copolymers
US3908046A (en) 1974-02-25 1975-09-23 Xerox Corp P-xylene vapor phase polymerization coating of electrostatographic particles
US4945856A (en) 1988-06-23 1990-08-07 Jeffrey Stewart Parylene deposition chamber
US5554220A (en) 1995-05-19 1996-09-10 The Trustees Of Princeton University Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
ATE230445T1 (de) 1995-10-27 2003-01-15 Specialty Coating Systems Inc Verfahren und vorrichtung zur ablagerung von parylen af4 auf halbleiterwafern
US5958510A (en) 1996-01-08 1999-09-28 Applied Materials, Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
JP3788835B2 (ja) * 1996-12-06 2006-06-21 株式会社アルバック 有機薄膜製造方法
KR100498050B1 (ko) * 1998-10-09 2005-10-14 삼성전자주식회사 열압축방식 잉크젯프린터헤드의 제작방법 및 그 잉크젯프린터헤드
US6362115B1 (en) 1998-12-09 2002-03-26 Applied Materials, Inc. In-situ generation of p-xylyiene from liquid precursors
US6709715B1 (en) 1999-06-17 2004-03-23 Applied Materials Inc. Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
RU2164047C1 (ru) * 2000-07-26 2001-03-10 Гадалова Ольга Евгеньевна Способ получения композиционных металлокерамических мембран cvd-методом и устройство для его реализации
KR100348893B1 (ko) * 2000-07-31 2002-08-30 학교법인 영남학원 패릴린박막 증착장치, 유기발광소자 제조방법 및유기발광소자
JP2002110564A (ja) * 2000-10-02 2002-04-12 Japan Pionics Co Ltd 気相成長装置及び気相成長方法
DE10136858A1 (de) 2001-02-15 2002-09-05 Aixtron Ag Beschichtungsvorrichtung
US6921556B2 (en) * 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US20040006621A1 (en) * 2002-06-27 2004-01-08 Bellinson Craig Adam Content filtering for web browsing
KR100749375B1 (ko) * 2003-07-01 2007-08-14 동경 엘렉트론 주식회사 플라즈마 화학 증착 장치
JP4596803B2 (ja) * 2004-03-25 2010-12-15 キヤノン株式会社 減圧蒸着装置
JP2006009041A (ja) * 2004-06-22 2006-01-12 Canon Inc プラズマ処理装置
JP4664637B2 (ja) * 2004-09-22 2011-04-06 三菱重工業株式会社 基板冷却装置及び基板の冷却方法
RU2317313C2 (ru) 2004-10-28 2008-02-20 Самсунг Электроникс Ко., Лтд Способ получения жидкокристаллической полимерной пленки
JP2007023350A (ja) * 2005-07-19 2007-02-01 Sharp Corp ポリパラキシリレン膜の形成方法、ポリパラキシリレン膜、インクジェットヘッド
CN101511903A (zh) * 2006-07-28 2009-08-19 第三化成株式会社 化学气相沉积装置及方法
JP2008053489A (ja) * 2006-08-25 2008-03-06 Hitachi Kokusai Electric Inc 基板処理装置
US7867560B2 (en) * 2007-03-28 2011-01-11 Tokyo Electron Limited Method for performing a vapor deposition process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW379367B (en) * 1996-11-07 2000-01-11 Applied Materials Inc Method and apparatus for depositing a multilayered low dielectric constant film
US6133148A (en) * 1997-11-24 2000-10-17 Samsung Electronics Co., Ltd. Method of depositing film for semiconductor device in single wafer type apparatus using a lamp heating method

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