TWI480383B - A magneto-optical recording medium for a magnetic recording medium, a sputtering target material, and a magnetic recording medium - Google Patents
A magneto-optical recording medium for a magnetic recording medium, a sputtering target material, and a magnetic recording medium Download PDFInfo
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- TWI480383B TWI480383B TW100130281A TW100130281A TWI480383B TW I480383 B TWI480383 B TW I480383B TW 100130281 A TW100130281 A TW 100130281A TW 100130281 A TW100130281 A TW 100130281A TW I480383 B TWI480383 B TW I480383B
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- 238000005477 sputtering target Methods 0.000 title claims description 10
- 239000013077 target material Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 24
- 229910052735 hafnium Inorganic materials 0.000 claims description 11
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 15
- 230000004907 flux Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 241000051616 Ulmus minor Species 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Soft Magnetic Materials (AREA)
- Thin Magnetic Films (AREA)
Description
本申請案係基於2010年8月24日申請之日本專利申請號2010-186876號主張優先權者,其全部揭示內容以參考方式併入本說明書中。
本發明係有關作為垂質磁性記錄媒體中之軟磁性層膜使用之Co-(Zr,Hf)-B系合金及濺鍍靶材以及磁性記錄媒體者。
近幾年來,隨著磁性記錄技術顯著進步,為使驅動器之大容量化,而進展磁性記錄媒體之高記錄密度化。例如,可實現比以往已普及之面內磁性記錄媒體更高記錄密度之垂直磁性記錄方式已實用化。所謂垂直磁性記錄方式,為使易磁化軸以相對於垂直磁性記錄媒體之磁性膜中之媒體面之垂直方向配向而形成者,為適於高記錄密度之方法。因此,於垂直磁性記錄方式中,已開發具有提高記錄感度之磁性記錄膜層及軟磁性膜層之兩層記錄媒體。該磁性記錄膜層一般使用CoCrPt-SiO2
系合金。
另一方面,以往的軟磁性膜層其強磁性及非晶質性係必要,進而隨著垂直磁性記錄媒體之用途或使用環境不同,附加要求有高飽和磁通密度(magnetic flux density)、高耐蝕性、高硬度等各種特性。例如日本特開2008-260970號公報(專利文獻1)中所揭示,係使用以耐蝕性的高強磁性元素的Co作為基底,並添加用以提高非晶質性之以Zr為代表的非晶質化促進元素者。
且,如日本特開2008-299905號公報(專利文獻2)中所揭示,藉由添加Fe而獲得高的飽和磁通密度,藉由添加B而獲得高硬度。進一步地,近幾年來,除了以往所要求之上述特性以外,變得亦要求具有低矯頑磁力之軟磁性膜用合金。
專利文獻1:日本特開2008-260970號公報
專利文獻2:日本特開2008-299905號公報
本發明人等此次針對合金元素對於垂直磁性記錄媒體之軟磁性膜用合金之矯頑磁力所帶來之影響進行詳細檢討之結果,發現藉由使Zr、Hf及B量成為特定範圍,可獲得垂直磁性記錄媒體用之低矯頑磁力軟磁性合金。而且,現今之垂直磁性記錄媒體用軟磁性合金由於主流上係使用含有25%至趨近60%之Fe作為用以獲得高的飽和磁通密度之元素,故大多使用Fe作為必要元素,但亦發現該Fe之添加會大幅增大矯頑磁力。
因此,本發明之目的係提供具有低矯頑磁力、高非晶質性、高耐蝕性及高硬度之垂直磁性記錄媒體用軟磁性合金、以及用以製作該合金薄膜之濺鍍靶材。
依據本發明之一樣態,係提供一種磁性記錄媒體用軟磁性合金,其以原子%計,含有
Zr及Hf之一種或兩種:合計6~20%,
B:1~20%,
Ti、V、Nb、Ta、Cr、Mo、W、Ni、Al、Si、P之一種或兩種以上:合計0~7%,
其餘部份由Co及/或Fe以及不可避免雜質所構成,且滿足下述式:
6≦2×(Zr%+Hf%)-B%≦16,以及
0≦Fe%/(Fe%+Co%)<0.20。
依據本發明另一樣態,係提供一種以前述合金製造之濺鍍靶材。
本發明之又另一樣態,係提供一種具備以前述合金製造之軟磁性膜層之磁性記錄媒體。
以下具體說明本發明。若無特別明確指示,則本說明書中之「%」意指原子%者。
依據本發明之合金,以原子%計,含有(comprising)Zr及Hf之一種或兩種合計為6~20%,B為1~20%,Ti、V、Nb、Ta、Cr、Mo、W、Ni、Al、Si、P之一種或兩種以上合計為0~7%,其餘部份由Co及/或Fe以及不可避免雜質所構成,較好實質上由該等元素構成(consisting essentially of),更好僅由該等元素構成(consisting of )。該合金進而滿足下述式:
6≦2×(Zr%+Hf%)-B%≦16,以及
0≦Fe%/(Fe%+Co%)<0.20。
依據本發明之合金,Zr及Hf之一種或兩種含有合計6~20%,較好含有10~15%。本發明之合金中Zr及Hf具有改善非晶質性之效果,且藉由使其與B添加量之相關性最佳化,而為用以獲得低矯頑磁力之必須元素,B添加量未達6%時無法獲得充分之非晶質性、低矯頑磁力,且若超過20%則無法獲得充分之飽和磁通密度。
依據本發明之合金,含有B為1~20%,較好為5~15%。本發明合金中之B具有改善非晶質性之效果,且藉由使其與Zr或Hf添加量之相關性最佳化,而為用以獲得低矯頑磁力之必要元素。B添加量未達1%時無法獲得充分之非晶質性、低矯頑磁力,且若超過20%則無法獲得充分之飽和磁通密度。且B亦有增大硬度之效果。
依據本發明之合金,藉由使Zr、Hf、B添加量成為滿足下述式之範圍,而獲得低矯頑磁力:
6≦2×(Zr%+Hf%)-B%≦16,
較好為8≦2×(Zr%+Hf%)-B%≦14,
更好為9≦2×(Zr%+Hf%)-B%≦12。
在該等範圍外則會增大矯頑磁力。該等式係對添加元素對矯頑磁力帶來之影響加以詳細探討,了解藉由隨著Zr%+Hf%添加量之2倍而增加B之添加量,而有顯示低矯頑磁力之區域之結果所得之式。
依據本發明之合金亦可為包含Fe作為任意成分者,此情況下,成為滿足下述式之範圍:
0<Fe%/(Fe%+Co%)<0.20,
較好為0<Fe%/(Fe%+Co%)<0.10,
更好為0<Fe%/(Fe%+Co%)<0.05。
本合金中之Fe雖有增加飽和磁通密度之效果,但若添加超過上述式之比例則會增大矯頑磁力。又,由於Fe為任意成分,故Fe添加量可為0%(亦即未添加Fe),此亦為最佳。
依據本發明之合金,作為任意成分之Ti、V、Nb、Ta、Cr、Mo、W、Ni、Al、Si、P之一種或兩種以上合計含7%以下,較好含2%以下,更好含1.5%以下者。本發明之合金中,Ti、V、Nb、Ta、Cr、Mo、W、Ni、Al、Si、P雖均僅少許,但亦具有降低矯頑磁力之效果。然而,若添加超過7%,則會降低飽和磁通密度。又,由於該等元素為任意成分,故其添加量可為0%。
以下,藉由實施例具體說明本發明。
通常,垂直磁性記錄媒體中之軟磁性膜層係藉由濺鍍與其成分相同成分之濺鍍靶材,而於玻璃基板等之上成膜而得。此處係使利用濺鍍成膜之薄膜急冷。相對於此,本發明中,作為實施例及比較例之供試材料係使用以單輥式液體急冷裝置製作之急冷薄帶。此係為了對實際上經濺鍍急冷並成膜之薄膜,簡易地藉由液體急冷薄帶評估其成分對諸特性之影響之故。
急冷薄帶之作業條件如下。首先,將表1之成分所秤量之原料30g於直徑10mm、高度40mm左右之水冷銅鑄模中,在減壓Ar中以電弧熔解,作為急冷薄帶之熔解母材。急冷薄帶之製作條件係以單輥方式,將該熔解母材設於直徑15mm之石英管中,將流出熔液噴嘴直徑設為1mm,環境氣壓61kPa、噴霧差壓69kPa、銅輥(直徑300mm)之旋轉數3000rpm,銅輥與流出熔液噴嘴之間隙0.3mm,予以流出熔液。且於熔解母材熔解滴落後立即流出熔液。將如此製作之急冷薄帶作為供試材料,且評估下述項目。
於振動試料型之矯頑磁力計中,於試料台上以雙面膠帶貼附急冷帶,以初期施加磁場144kA/m測定急冷薄帶之矯頑磁力。矯頑磁力為50A/m以下者評價為○,超過50A/m且100A/m以下者評估為△,超過100A/m者評估為×。
於VSM裝置(振動試料型磁力計)中,以施加磁場1200kA/m測定急冷薄帶之飽和磁通密度。供試材料之重量為15mg左右。0.5T以上評估為○,未達0.5T評估為×。
作為急冷薄帶之非晶質性評估,通常當測定非晶質材料之X射線繞射圖型時,未見到繞射峰,成為非晶質特有之中空圖型(hallow pattern)。又,於並非完全非晶質之情況,雖見到繞射峰,但與結晶材料相比,峰高度較低,且亦見到中空圖型。因而,以下述方法評估非晶質性。
於玻璃板上以雙面膠帶貼附供試材料,以X射線繞射裝置獲得繞射圖型。此時,以使測定面成為急冷薄帶之銅輥接觸面之方式將供試材料貼附於玻璃板上。X射線源係以Cu-Kα線,掃描速度為4°/min進行測定。該繞射圖型中,可確認中空圖型者評估為○,完全未見到中空圖型者評估為×,作為非晶質性之評估。
於玻璃板上以雙面膠帶貼附供試材料,以5% NaCl食鹽水,在溫度為35℃、噴霧時間16小時之條件下,進行鹽水噴霧試驗,藉此評估急冷薄帶之耐蝕性。具體而言,全面生鏽者評估為×,一部分生鏽者評估為○。
將急冷帶縱向埋入樹脂並研磨,以維氏(Vickers)硬度計測定急冷薄帶之維氏硬度。測定荷重為50g測定10點並以其平均進行評估。具體而言,800HV以上評估為○,未達800HV評估為×。壓痕尺寸為10μm左右。
關於表1所示成分組成之各供試材料No. 1~19,獲得表2所示結果。
於表1及表2所示之No.1~11為本發明例,No.12~19為比較例。
如表1及表2所示,比較例No.12由於成分組成的Hf含量低,故矯頑磁力值高且無法獲得充分之非晶質性。比較例No.13由於成分組成的Zr及Hf合計含量高,且成分組成相關之式(1)之2×(Zr%+Hf%)-B之值高,故矯頑磁力值高,且飽和磁通密度差。比較例No.14由於成分組成相關之式(1)之2×(Zr%+Hf%)-B之值高,故矯頑磁力差。
比較例No.15由於成分組成相關之式(1)之2×(Zr%+Hf%)-B之值低,故矯頑磁力差。比較例No.16由於並未含有成分組成的B,故矯頑磁力差且無法獲得充分之非晶質性,且硬度低。比較例No.17由於成分組成的B含量高,故飽和磁通密度差。比較例No.18由於成分組成相關之式(2)之Fe%/(Fe%+Co%)之值高,故矯頑磁力差。比較例No.19由於成分組成的Nb及P之合計量高,故飽和磁通密度差。
相對於此,可知本發明例的No.1~11均滿足本發明之條件,故有關飽和磁通密度、非晶質性、耐蝕性及硬度之各性能均優異。本發明例的No.1、2、5、6及8~12之矯頑磁力雖稍差,但具有全體優異之性能。
接著,顯示濺鍍靶材之製造方法之例。將秤量No.5之組成之熔解原料,以在減壓Ar環境之耐火物坩鍋內感應加熱熔解後,自坩鍋下部之直徑8mm之噴嘴流出熔液,利用Ar氣體霧化。以該氣體霧化粉末作為原料粉末,填充於碳鋼製之直徑250mm、長度100mm之囊胞內,進行真空脫氣而封入。將此粉末填充之鋼胚以成形溫度1000℃、成形壓力147MPa、成形時間5小時之條件進行HIP成形。自該HIP體,利用機械加工製作直徑18mm、厚度7mm之濺鍍靶材。該濺鍍靶材可無龜裂無缺口地被製造。
如上述,依據本發明,可提供具有低矯頑磁力、高非晶質性、高耐蝕性及高硬度之垂直磁性記錄媒體用軟磁性合金、以及用以製作該合金之薄膜的濺鍍靶。
Claims (6)
- 一種磁性記錄媒體用軟磁性合金,其以原子%計,含有Zr及Hf之一種或兩種:合計6~20%;B:1~20%;Ti、V、Nb、Ta、Cr、Mo、W、Ni、Al、Si、P之一種或兩種以上:合計0~7%,其餘部份由Co及/或Fe以及不可避免雜質所構成,且滿足下述式:6≦2×(Zr%+Hf%)-B%≦16,以及0≦Fe%/(Fe%+Co%)<0.20。
- 如申請專利範圍第1項之合金,其中前述合金以原子%計,係僅由下述成分所構成:Zr及Hf之一種或兩種:合計6~20%;B:1~20%;Ti、V、Nb、Ta、Cr、Mo、W、Ni、Al、Si、P之一種或兩種以上:合計0~7%,剩餘部份為Co及/或Fe以及不可避免雜質。
- 如申請專利範圍第1項之合金,其中Fe之添加量滿足下述式:0<Fe%/(Fe%+Co%)<0.20。
- 如申請專利範圍第1項之磁性記錄媒體用軟磁性合金,其中前述合金含有合計超過0%且7%以下之Ti、V、Nb、Ta、Cr、Mo、W、Ni、Al、Si及P之一種或兩種以上。
- 一種濺鍍靶材,其係以如申請專利範圍第1至4項中任一項之合金所製造。
- 一種磁性記錄媒體,其係具備以如申請專利範圍第1至4項中任一項之合金所製造之軟磁性膜層。
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JP6405261B2 (ja) * | 2014-05-01 | 2018-10-17 | 山陽特殊製鋼株式会社 | 磁気記録用軟磁性合金及びスパッタリングターゲット材並びに磁気記録媒体 |
JP2017057490A (ja) * | 2015-09-18 | 2017-03-23 | 山陽特殊製鋼株式会社 | Co−Fe−B系合金ターゲット材 |
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