TWI468674B - Method for inspection of multi - crystalline wafers - Google Patents

Method for inspection of multi - crystalline wafers Download PDF

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Publication number
TWI468674B
TWI468674B TW99117151A TW99117151A TWI468674B TW I468674 B TWI468674 B TW I468674B TW 99117151 A TW99117151 A TW 99117151A TW 99117151 A TW99117151 A TW 99117151A TW I468674 B TWI468674 B TW I468674B
Authority
TW
Taiwan
Prior art keywords
camera
polycrystalline wafer
light source
inspecting
polycrystalline
Prior art date
Application number
TW99117151A
Other languages
English (en)
Chinese (zh)
Other versions
TW201100788A (en
Inventor
Takayuki Matsuo
Original Assignee
Lossev Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lossev Technology Corp filed Critical Lossev Technology Corp
Publication of TW201100788A publication Critical patent/TW201100788A/zh
Application granted granted Critical
Publication of TWI468674B publication Critical patent/TWI468674B/zh

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3554Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
    • G01N21/3559Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content in sheets, e.g. in paper
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW99117151A 2009-05-29 2010-05-28 Method for inspection of multi - crystalline wafers TWI468674B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009130725 2009-05-29
JP2009186304 2009-08-11

Publications (2)

Publication Number Publication Date
TW201100788A TW201100788A (en) 2011-01-01
TWI468674B true TWI468674B (zh) 2015-01-11

Family

ID=43222548

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99117151A TWI468674B (zh) 2009-05-29 2010-05-28 Method for inspection of multi - crystalline wafers

Country Status (5)

Country Link
JP (1) JP5559163B2 (ja)
KR (1) KR101323035B1 (ja)
CN (1) CN102422149B (ja)
TW (1) TWI468674B (ja)
WO (1) WO2010137431A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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CN102680102A (zh) * 2012-04-28 2012-09-19 江南大学 基于机器视觉的太阳能硅晶片颜色自动检测方法
JP2014190797A (ja) * 2013-03-27 2014-10-06 Tokushima Densei Kk シリコンウェハの欠陥検査装置
TWI557407B (zh) * 2014-03-05 2016-11-11 晶元光電股份有限公司 晶粒檢測方法
KR101522365B1 (ko) * 2014-05-28 2015-05-21 이영우 빗각조명을 이용한 기판 검사장치
KR101602733B1 (ko) * 2014-10-28 2016-03-11 한국교통대학교산학협력단 웨이퍼 검사장치 및 웨이퍼 검사방법
KR102386192B1 (ko) * 2014-12-05 2022-04-12 케이엘에이 코포레이션 워크 피스들에서의 결함 검출을 위한 장치, 방법 및 컴퓨터 프로그램 제품
CN105738379B (zh) * 2014-12-12 2018-10-19 上海和辉光电有限公司 一种多晶硅薄膜的检测装置及检测方法
CN107369740A (zh) * 2017-07-17 2017-11-21 苏州天准科技股份有限公司 一种用于检测太阳能硅片隐裂的光学检测装置及检测方法
CN107907549A (zh) * 2017-11-13 2018-04-13 武汉华星光电半导体显示技术有限公司 基板检查设备及基板检查方法
US10724965B2 (en) 2018-02-09 2020-07-28 Massachusetts Institute Of Technology Systems and methods for crack detection
JP7063181B2 (ja) * 2018-08-09 2022-05-09 株式会社Sumco ウェーハの検査方法および検査装置
CN109765183B (zh) * 2019-03-28 2023-11-24 青岛海鼎通讯技术有限公司 一种手机屏检测装置及其使用方法
MY202103A (en) * 2019-04-30 2024-04-03 Tt Vision Tech Sdn Bhd An apparatus for detecting defects in an object and method thereof
CN112129772B (zh) * 2019-06-24 2024-10-22 杭州元色科技有限公司 缺陷检测系统以及方法
CN110487814A (zh) * 2019-08-13 2019-11-22 东莞市创明电池技术有限公司 电池铝片缺陷检测装置
JP6755603B1 (ja) * 2019-12-25 2020-09-16 上野精機株式会社 電子部品の処理装置
TWI797689B (zh) * 2021-05-24 2023-04-01 馬來西亞商正齊科技有限公司 檢查電子元件內部缺陷的裝置及方法
CN116913797B (zh) * 2023-07-14 2024-02-13 无锡九霄科技有限公司 一种晶圆键合质量检测装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001305072A (ja) * 2000-04-25 2001-10-31 Advantest Corp 基板の欠陥検出方法及び装置
US20010054693A1 (en) * 1998-08-21 2001-12-27 Trw Inc. Method and apparatus for inspection of a substrate by use of a ring illuminator
JP2007218638A (ja) * 2006-02-14 2007-08-30 Sharp Corp 多結晶半導体ウエハの割れ検査装置および割れ検査方法
JP2008198966A (ja) * 2007-02-08 2008-08-28 Nippon Electro Sensari Device Kk ウエーハ欠陥検査装置
TW200839916A (en) * 2006-09-12 2008-10-01 Rudolph Technologies Inc Polarization imaging

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3187759B2 (ja) * 1997-12-09 2001-07-11 株式会社アドバンテスト 有機汚染検出・除去装置及びその有機汚染検出・除去方法並びに化学汚染検出・除去装置及びその化学汚染検出・除去方法
JP4363368B2 (ja) * 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法
DE102005061785B4 (de) * 2005-12-23 2008-04-03 Basler Ag Verfahren und Vorrichtung zum Erkennen von Rissen in Silizium-Wafern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010054693A1 (en) * 1998-08-21 2001-12-27 Trw Inc. Method and apparatus for inspection of a substrate by use of a ring illuminator
JP2001305072A (ja) * 2000-04-25 2001-10-31 Advantest Corp 基板の欠陥検出方法及び装置
JP2007218638A (ja) * 2006-02-14 2007-08-30 Sharp Corp 多結晶半導体ウエハの割れ検査装置および割れ検査方法
TW200839916A (en) * 2006-09-12 2008-10-01 Rudolph Technologies Inc Polarization imaging
JP2008198966A (ja) * 2007-02-08 2008-08-28 Nippon Electro Sensari Device Kk ウエーハ欠陥検査装置

Also Published As

Publication number Publication date
JPWO2010137431A1 (ja) 2012-11-12
CN102422149B (zh) 2014-03-19
JP5559163B2 (ja) 2014-07-23
TW201100788A (en) 2011-01-01
WO2010137431A1 (ja) 2010-12-02
KR20120022993A (ko) 2012-03-12
CN102422149A (zh) 2012-04-18
KR101323035B1 (ko) 2013-10-29

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