KR101323035B1 - 다결정 웨이퍼의 검사 방법 - Google Patents

다결정 웨이퍼의 검사 방법 Download PDF

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Publication number
KR101323035B1
KR101323035B1 KR1020117027655A KR20117027655A KR101323035B1 KR 101323035 B1 KR101323035 B1 KR 101323035B1 KR 1020117027655 A KR1020117027655 A KR 1020117027655A KR 20117027655 A KR20117027655 A KR 20117027655A KR 101323035 B1 KR101323035 B1 KR 101323035B1
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KR
South Korea
Prior art keywords
polycrystalline wafer
light source
camera
wafer
irradiation position
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KR1020117027655A
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English (en)
Korean (ko)
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KR20120022993A (ko
Inventor
타카유키 마츠오
Original Assignee
로세브 테크놀로지 코포레이션
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Publication of KR20120022993A publication Critical patent/KR20120022993A/ko
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Publication of KR101323035B1 publication Critical patent/KR101323035B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3554—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
    • G01N21/3559—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content in sheets, e.g. in paper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020117027655A 2009-05-29 2010-04-21 다결정 웨이퍼의 검사 방법 KR101323035B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009130725 2009-05-29
JPJP-P-2009-130725 2009-05-29
JP2009186304 2009-08-11
JPJP-P-2009-186304 2009-08-11
PCT/JP2010/057094 WO2010137431A1 (ja) 2009-05-29 2010-04-21 多結晶ウエハの検査方法

Publications (2)

Publication Number Publication Date
KR20120022993A KR20120022993A (ko) 2012-03-12
KR101323035B1 true KR101323035B1 (ko) 2013-10-29

Family

ID=43222548

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117027655A KR101323035B1 (ko) 2009-05-29 2010-04-21 다결정 웨이퍼의 검사 방법

Country Status (5)

Country Link
JP (1) JP5559163B2 (ja)
KR (1) KR101323035B1 (ja)
CN (1) CN102422149B (ja)
TW (1) TWI468674B (ja)
WO (1) WO2010137431A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102680102A (zh) * 2012-04-28 2012-09-19 江南大学 基于机器视觉的太阳能硅晶片颜色自动检测方法
JP2014190797A (ja) * 2013-03-27 2014-10-06 Tokushima Densei Kk シリコンウェハの欠陥検査装置
TWI557407B (zh) * 2014-03-05 2016-11-11 晶元光電股份有限公司 晶粒檢測方法
KR101522365B1 (ko) * 2014-05-28 2015-05-21 이영우 빗각조명을 이용한 기판 검사장치
KR101602733B1 (ko) * 2014-10-28 2016-03-11 한국교통대학교산학협력단 웨이퍼 검사장치 및 웨이퍼 검사방법
KR102386192B1 (ko) * 2014-12-05 2022-04-12 케이엘에이 코포레이션 워크 피스들에서의 결함 검출을 위한 장치, 방법 및 컴퓨터 프로그램 제품
CN105738379B (zh) * 2014-12-12 2018-10-19 上海和辉光电有限公司 一种多晶硅薄膜的检测装置及检测方法
CN107369740A (zh) * 2017-07-17 2017-11-21 苏州天准科技股份有限公司 一种用于检测太阳能硅片隐裂的光学检测装置及检测方法
CN107907549A (zh) * 2017-11-13 2018-04-13 武汉华星光电半导体显示技术有限公司 基板检查设备及基板检查方法
US10724965B2 (en) 2018-02-09 2020-07-28 Massachusetts Institute Of Technology Systems and methods for crack detection
JP7063181B2 (ja) * 2018-08-09 2022-05-09 株式会社Sumco ウェーハの検査方法および検査装置
CN109765183B (zh) * 2019-03-28 2023-11-24 青岛海鼎通讯技术有限公司 一种手机屏检测装置及其使用方法
MY202103A (en) * 2019-04-30 2024-04-03 Tt Vision Tech Sdn Bhd An apparatus for detecting defects in an object and method thereof
CN112129772B (zh) * 2019-06-24 2024-10-22 杭州元色科技有限公司 缺陷检测系统以及方法
CN110487814A (zh) * 2019-08-13 2019-11-22 东莞市创明电池技术有限公司 电池铝片缺陷检测装置
JP6755603B1 (ja) * 2019-12-25 2020-09-16 上野精機株式会社 電子部品の処理装置
TWI797689B (zh) * 2021-05-24 2023-04-01 馬來西亞商正齊科技有限公司 檢查電子元件內部缺陷的裝置及方法
CN116913797B (zh) * 2023-07-14 2024-02-13 无锡九霄科技有限公司 一种晶圆键合质量检测装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000065759A (ja) * 1998-08-21 2000-03-03 Trw Inc 基板の欠陥を検出する装置及びその方法
JP2001305072A (ja) * 2000-04-25 2001-10-31 Advantest Corp 基板の欠陥検出方法及び装置
JP2007218638A (ja) * 2006-02-14 2007-08-30 Sharp Corp 多結晶半導体ウエハの割れ検査装置および割れ検査方法
JP2008198966A (ja) * 2007-02-08 2008-08-28 Nippon Electro Sensari Device Kk ウエーハ欠陥検査装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3187759B2 (ja) * 1997-12-09 2001-07-11 株式会社アドバンテスト 有機汚染検出・除去装置及びその有機汚染検出・除去方法並びに化学汚染検出・除去装置及びその化学汚染検出・除去方法
JP4363368B2 (ja) * 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法
DE102005061785B4 (de) * 2005-12-23 2008-04-03 Basler Ag Verfahren und Vorrichtung zum Erkennen von Rissen in Silizium-Wafern
KR20090060435A (ko) * 2006-09-12 2009-06-12 루돌프 테크놀로지스 인코퍼레이티드 편광 이미징

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000065759A (ja) * 1998-08-21 2000-03-03 Trw Inc 基板の欠陥を検出する装置及びその方法
JP2001305072A (ja) * 2000-04-25 2001-10-31 Advantest Corp 基板の欠陥検出方法及び装置
JP2007218638A (ja) * 2006-02-14 2007-08-30 Sharp Corp 多結晶半導体ウエハの割れ検査装置および割れ検査方法
JP2008198966A (ja) * 2007-02-08 2008-08-28 Nippon Electro Sensari Device Kk ウエーハ欠陥検査装置

Also Published As

Publication number Publication date
JPWO2010137431A1 (ja) 2012-11-12
CN102422149B (zh) 2014-03-19
JP5559163B2 (ja) 2014-07-23
TW201100788A (en) 2011-01-01
WO2010137431A1 (ja) 2010-12-02
KR20120022993A (ko) 2012-03-12
CN102422149A (zh) 2012-04-18
TWI468674B (zh) 2015-01-11

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