WO2010137431A1 - 多結晶ウエハの検査方法 - Google Patents
多結晶ウエハの検査方法 Download PDFInfo
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- WO2010137431A1 WO2010137431A1 PCT/JP2010/057094 JP2010057094W WO2010137431A1 WO 2010137431 A1 WO2010137431 A1 WO 2010137431A1 JP 2010057094 W JP2010057094 W JP 2010057094W WO 2010137431 A1 WO2010137431 A1 WO 2010137431A1
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- polycrystalline wafer
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000007689 inspection Methods 0.000 title claims abstract description 23
- 230000007547 defect Effects 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 238000003384 imaging method Methods 0.000 claims description 12
- 230000002950 deficient Effects 0.000 claims description 2
- 238000005286 illumination Methods 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 113
- 238000001514 detection method Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3554—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
- G01N21/3559—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content in sheets, e.g. in paper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a method for inspecting a defect in a polycrystalline wafer such as a polycrystalline silicon wafer for solar cells by transmission of infrared rays.
- Patent Document 1 discloses a method of irradiating a silicon wafer with infrared rays, photographing transmitted infrared rays with a CCD camera, and detecting defects such as microcracks from the photographed image by image processing.
- Patent Document 2 irradiates infrared rays from the front and back surfaces of a polycrystalline wafer, images infrared reflected light from the front surface and infrared transmitted light from the back surface by an infrared camera, and compares the image data from the front and back surfaces.
- the general infrared transmission light imaging method also captures the crystal direction, crystal boundaries, and crystal patterns due to the outline thereof as an image. In the process, it becomes difficult to distinguish between the crystal pattern and the defect, and it is easy to cause a false detection or a defect to be overlooked.
- An object of the present invention is to make a crystal pattern of a polycrystalline wafer crystal direction, a crystal boundary and a contour thereof lighter in a photographing process, and to detect defects in the polycrystalline wafer with certainty.
- the inventor repeated an experiment of irradiating a polycrystalline wafer with infrared rays and observing the transmitted infrared rays.
- the following knowledge was obtained. That is, if the infrared light transmitted through the polycrystalline wafer at the infrared irradiation position is directly observed, the crystal pattern of the polycrystalline wafer in the photographed image cannot be made light.
- the infrared irradiation position is separated from the observation position of the transmitted infrared light, that is, the shooting position by the camera, by a suitable distance, the crystal pattern of the polycrystalline wafer can be made light, and only the brightness of the defects in the polycrystalline wafer can be reduced. It could be different from the brightness of other normal parts.
- the present invention has been completed based on such findings.
- the present invention provides the following. (1) irradiating infrared rays toward the irradiation position from a light source arranged so that the optical axis passes through the irradiation position on the polycrystalline wafer; Infrared rays that are incident from the irradiation position and repeatedly refracted and reflected inside the polycrystalline wafer, and emitted from a photographing position on the polycrystalline wafer that is separated from the irradiation position by a predetermined distance in the plane direction of the polycrystalline wafer, Shooting with a camera that shoots the shooting position; Detecting a defect in the polycrystalline wafer based on a difference in brightness between the defect-free portion and the defective portion on a photographed image obtained by the camera.
- the method for inspecting a polycrystalline wafer according to (1) wherein the imaging position is set on a surface opposite to the surface of the polycrystalline wafer on which the irradiation position is set.
- the light source is a single light source, The optical axis of the light source is inclined with respect to the surface of the polycrystalline wafer so as to extend from the irradiation position to the photographing position side. Crystal wafer inspection method.
- the light sources are a plurality of light sources arranged substantially symmetrically with respect to the photographing position.
- each light source is inclined at the same inclination angle with respect to the surface of the polycrystalline wafer so as to extend from each irradiation position to the photographing position side (1).
- the light source is a line-type light source
- the camera is a line sensor type camera, The method for inspecting a polycrystalline wafer according to any one of (1) to (5), wherein the camera detects infrared rays condensed by a cylindrical lens.
- the light source is a ring type light source that forms a ring type irradiation region
- the camera is an area sensor type camera in which the inside of the ring-shaped irradiation area is an imaging area, The method for inspecting a polycrystalline wafer according to any one of (1) to (5), wherein the camera detects the infrared light condensed by a magnifying lens.
- infrared rays incident on the polycrystalline wafer from the irradiation position are repeatedly reflected and refracted in the polycrystalline wafer, and are separated from the irradiation position by a predetermined distance in the plane direction of the polycrystalline wafer.
- the light is emitted from the photographing position on the polycrystalline wafer.
- the infrared rays are repeatedly reflected and refracted in the polycrystalline wafer, so that the intensity of the infrared rays reaching the photographing position becomes substantially uniform, and the influence of the crystal pattern is affected. Since it is hardly received, the photographed image obtained by the camera becomes an image having uniform brightness that does not reflect the crystal pattern of the polycrystalline wafer.
- the photographed image obtained by the camera becomes an image having uniform brightness that does not reflect the crystal pattern of the polycrystalline wafer.
- infrared rays are irregularly reflected by the defect, and the intensity of the infrared rays reaching the photographing position becomes non-uniform.
- the defect appears as an area having a different brightness on the captured image obtained by the camera as compared with the case where the defect does not exist.
- the photographed image obtained by the camera is hardly affected by the crystal direction of the polycrystalline wafer, the crystal boundary, and the crystal pattern due to the outline thereof, and only the defect is a defect. Since the brightness is different from that of the non-exposed portion, defects in the polycrystalline wafer can be reliably detected.
- FIG. 1 is a side view of an optical system showing a state in which an inspection direction (conveying direction of the polycrystalline wafer 1) A is from right to left
- FIG. 2 is an optical system showing a state in which the inspection direction A is from the paper surface toward the front of the paper surface.
- a line-shaped infrared ray 3 extending in a direction orthogonal to the conveyance direction A of the polycrystalline wafer 1 from a line-type light source 2 disposed on the lower surface side of the polycrystalline wafer 1 is converted into a line shape of the polycrystalline wafer 1. Irradiate toward the irradiation position P1. At this time, the light source 2 is arranged so that the optical axis of the light source 2 passing through the irradiation position P1 is inclined with respect to the normal line n1 of the surface of the polycrystalline wafer 1.
- the optical axis of the light source 2 forms an inclination angle ⁇ with respect to the normal line n1 so that the infrared rays 3 emitted from the light source 2 extend from the irradiation position P1 side to the photographing position P2 side.
- Such a line-type light source 2 can be configured by arranging a large number of infrared light emitting diodes linearly or by combining a rod-shaped infrared light source and a light source cover in which a line-shaped slit is formed.
- the infrared rays 3 incident from the irradiation position P1 are repeatedly reflected and refracted inside the polycrystalline wafer 1, and are repeatedly reflected on the front and back surfaces of the polycrystalline wafer 1 to obtain the photographing position P2.
- a part of the infrared ray 3 that has reached the photographing position P2 is reflected, and a part thereof is emitted as it is from the surface of the polycrystalline wafer 1.
- the infrared rays 3 emitted from the photographing position P2 are photographed by the camera 6 arranged so that the optical axis 7 passes through the photographing position P2, and a photographed image is obtained by the camera 6.
- the photographing position P2 is set to a position that is separated from the irradiation position P1 by a predetermined distance D in the surface direction of the polycrystalline wafer 1.
- the camera 6 is disposed on the opposite side of the light source 2 with respect to the polycrystalline wafer 1.
- the optical axis 7 of the camera 6 passes through the photographing position P2 and is perpendicular to the surface of the polycrystalline wafer 1.
- the wavelength of the infrared ray 3 irradiated in a line shape is preferably a wavelength suitable for detecting internal defects, for example, a wavelength region of 0.7 ⁇ m to 2.5 ⁇ m.
- the camera 6 also preferably has good sensitivity in this wavelength region.
- the photographing position P2 is set at a position away from the irradiation position P1 by a predetermined distance D.
- This distance D is set according to the crystal structure of the polycrystalline wafer 1 and its thickness, and is set to the best position where the crystal pattern becomes light.
- the inspection method of the present invention is preferably for a polycrystalline wafer 1 having a thickness of 0.1 to 0.25 mm.
- the infrared rays 3 are refracted, reflected, and absorbed inside the polycrystalline wafer 1, and the intensity of the infrared rays 3 photographed by the camera 6 is reduced to obtain a clear photographed image. Because there is no. If the thickness of the polycrystalline wafer 1 is reduced, the number of refractions and reflections that occur until the infrared rays 3 reach the photographing position P2 decreases, and a crystal pattern remains in the photographed image obtained by the camera 6.
- the inclination angle ⁇ of the optical axis of the light source 2 with respect to the normal line n1 of the surface of the polycrystalline wafer 1 is set in the range of 20 ° to 40 °.
- the inclination angle ⁇ is less than 20 °, the number of refractions / reflections required until the infrared ray 3 reaches the photographing position P2 that is separated from the irradiation position P1 by the predetermined distance D increases, and the intensity of the infrared ray 3 photographed by the camera 6 increases. This is because a sharp photographed image cannot be obtained.
- the inclination angle ⁇ is larger than 20 °, the number of refractions / reflections required until the infrared rays 3 reach the photographing position P2 decreases, and a crystal pattern remains in the photographed image.
- the predetermined distance D between the irradiation position P1 and the photographing position P2 is preferably set to 1 to 3 mm. If the predetermined distance D is shorter than 1 mm, the number of refractions / reflections required until the infrared rays 3 reach the photographing position P2 decreases, and a crystal pattern remains in the photographed image. If the predetermined distance D is longer than 3 mm, the number of refractions / reflections increases, and the intensity of the infrared rays 3 photographed by the camera 6 decreases, so that a clear photographed image cannot be obtained.
- the thickness, the inclination angle ⁇ , and the predetermined distance D of the polycrystalline wafer 1 described above are set so as to obtain a clear photographed image with little influence of the crystal pattern. Set as appropriate within the range.
- the infrared rays 3 that have passed through the defect-free region of the polycrystalline wafer 1 are present in a number of randomly existing crystals. Refraction and reflection are repeated in the crystal direction of the grain and the boundary of the crystal to reach the photographing position P2. Since the infrared rays 3 that have been repeatedly subjected to random refraction and reflection a plurality of times reach the photographing position P2 that is separated from the irradiation position P1 by a predetermined distance D, the effects of refraction and reflection at each crystal grain cancel each other.
- the photographed image photographed at the photographing position P2 is a linear photographed image having uniform brightness.
- the defect 4 when the defect 4 is present on the polycrystalline wafer 1, unlike the above, the infrared rays 3 are irregularly reflected or absorbed by the defect 4. A bright part appears. Since the shadow and bright part due to the defect 4 are different in brightness from the photographed image formed by the infrared rays 3 that have passed through the above-described defect-free region, the defect 4 can be detected by comparing the brightness of both. .
- 4A and 4B show captured images of the camera 6 that captures the infrared rays 3 transmitted through the region including the defect 4.
- a bright image with a dark shadow by the infrared ray 3 that has passed through the defect 4 is formed on a background image of uniform brightness formed by the infrared ray 3 that has passed through the defect-free region. Therefore, the defect 4 can be easily and reliably recognized by detecting areas with different brightness from a background image with uniform brightness.
- the photographing position is set to a position P3 where the predetermined distance D on the extension line of the optical axis of the light source 2 is shorter than 1 mm (see FIG. 1), the infrared rays 3 emitted without sufficiently repeating refraction and reflection are used. Since the photographing is performed at the photographing position P3, the photographed image is an image affected by the boundary of the crystal.
- two line-type light sources 2 are arranged on the lower side of the polycrystalline wafer 1 at positions symmetrical with respect to the normal line (the optical axis 7 of the camera 6) on the imaging position P2.
- the line-shaped infrared rays 3 are irradiated from two different inclination directions toward two irradiation positions P1 of the polycrystalline wafer 1.
- the inclination angles formed by the optical axes of the respective light sources 2 and the surface of the polycrystalline wafer 1 are set to be substantially the same. According to this example, in addition to the effects described above, the amount of infrared rays 3 that can be detected by the camera 6 increases, and a bright photographed image can be obtained, so that the defect 4 can be easily detected.
- FIG. 6 shows an example in which infrared rays 3 transmitted through the polycrystalline wafer 1 are condensed by a cylindrical lens 8 and the condensed infrared rays 3 are detected by a line sensor type camera 6.
- the cylindrical lens 8 is arranged such that its longitudinal direction is along the line-shaped infrared rays 3, and the image of the infrared rays 3 is enlarged in the conveyance direction of the polycrystalline wafer 1.
- the lens 8 can also be incorporated into an example in which the light source 2 is single as shown in FIGS.
- optical system is set to appropriate values depending on the thickness of the polycrystalline wafer 1, the wavelength range of the infrared ray 3, the irradiation angle of the infrared ray 3, the sensitivity of the camera 6, and the like.
- FIG. 7 shows an example in which the light source 2 is a ring-type light source, the camera 6 is an area-type camera, and the light source 2 and the camera 6 are arranged on different planes with respect to the polycrystalline wafer 1.
- the ring-type light source 2 is arranged concentrically with respect to the optical axis 7 of the camera 6.
- the irradiation position P1 of the light source 2 is given as a position where the luminous flux of the infrared rays 3 irradiated by the light source 2 is the largest, and is a circle slightly smaller than the circle of the light source 2.
- the photographing position (photographing region) P2 is a detection range by the area type camera 6, and inside the ring type light source 2, as shown in FIG. 8, the optical axis 7 of the camera 6 from the irradiation position P1.
- the enlargement convex lens 8 on the objective lens side of the camera 6 is arranged as necessary.
- the irradiation position P1 can also be formed by a ring-type slit.
- the infrared ray 3 from the light source 2 enters the inside of the polycrystalline wafer 1 from the circular irradiation position P1, reaches the inside of the circular photographing position P2 of the camera 6 by repeating refraction and reflection, Photographed by an area type camera 6.
- the inspection range (observation range) of the polycrystalline wafer 1 can be set as a larger surface than the line-shaped inspection range, so that the inspection efficiency is improved.
- FIG. 9 shows an example in which the ring type light source 2 and the area type camera 6 are arranged on the same surface side of the polycrystalline wafer 1. Also in this example, the infrared ray 3 from the light source 2 enters the inside of the polycrystalline wafer 1 from the circular irradiation position P1, reaches the inside of the circular imaging position P2 by repeating refraction and reflection, and is imaged by the area type camera 6. Is done.
- a light shielding hood 9 is installed on the camera 6 so that the reflected light of the infrared rays 3 does not directly enter the camera 6. May be. Also in this example, the irradiation position P1 can be formed by a ring-shaped slit.
- the portion of the defect 4 in the polycrystalline wafer 1 is another normal portion with respect to the infrared ray 3.
- the detection of the defect 4 becomes effective and easy. Furthermore, even when the irradiation position P1 or the photographing position P2 cannot be set on one surface of the polycrystalline wafer 1, the defect 4 can be detected.
- the line-type light source 2 may also be arranged on the same side as the camera 6 with respect to the polycrystalline wafer 1 in the examples of FIGS. 1, 2, 5 and 6 described above.
- the infrared rays 3 from the line-type light source 2, as illustrated by a two-dot chain line in FIG. 9, are used as necessary by using a light guide such as an optical fiber or an acrylic resin plate, as necessary. Irradiation from at least one of the end faces (four side faces) toward the inside of the polycrystalline wafer 1 can also be performed.
- the front edge in the traveling direction or the rear edge in the traveling direction of the polycrystalline wafer 1 If one of the light sources 2 or a part of the light source 2 is removed, the other light source 2 or the other part of the light source 2 is not detached from the edge of the moving polycrystalline wafer 1, and the defect 4 is subsequently detected. Can continue. For this reason, the defect 4 can be detected also at the edge portion of the polycrystalline wafer 1.
- the infrared rays 3 are irradiated from the tilt direction toward the irradiation position P1 of the polycrystalline wafer 1. For this reason, in the process in which the infrared rays 3 pass through the crystal wafer 1, the opportunities for refraction and reflection are greater than those in the vertical direction, and the infrared rays 3 can be hardly affected by the crystal pattern.
- the irradiation direction of the infrared rays 3 can also be set in a substantially vertical direction toward the irradiation position P1 of the polycrystalline wafer 1. Even if set in this way, since the infrared rays 3 are reflected at the boundaries of many crystals, the infrared rays 3 are diffused in directions other than the vertical direction. A photographed image that is not received can be obtained.
- the infrared rays 3 are directed toward the irradiation position P1 of the polycrystalline wafer 1 and directed toward the photographing position P2, and the irradiation is performed in a tilted state. For this reason, many infrared rays 3 go to the photographing position P2 through the polycrystalline wafer 1, so that a necessary amount of light can be secured at the photographing position P2. However, even if the infrared ray 3 is directed through the polycrystalline wafer 1 in a direction other than the photographing position P2, the amount of light that can be photographed at the photographing position P2 due to refraction and reflection inside the polycrystalline wafer 1, and further irregular reflection. Therefore, the inspection of the defect 4 is possible in principle.
- the imaging conditions are improved.
- the polycrystalline wafer 1 may be continuously moved. Further, the posture of the polycrystalline wafer 1 may be set as a vertical or inclined state according to the inspection space, not horizontal.
- the present invention is not limited to silicon wafers, but can be used for other polycrystalline wafers.
- the method for inspecting a polycrystalline wafer of the present invention it is possible to obtain a photographed image that can clearly identify the existence of a defect with a light crystal pattern due to the crystal direction of the polycrystalline wafer, the boundary of the crystal and its outline. In addition, it is possible to detect defects reliably.
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Abstract
Description
(1) 光軸が多結晶ウエハ上の照射位置を通過するように配置された光源から、赤外線を前記照射位置に向けて照射する工程と、
前記照射位置から入射して前記多結晶ウエハ内部で屈折及び反射を繰り返して、前記照射位置から前記多結晶ウエハの面方向に所定距離離間した前記多結晶ウエハ上の撮影位置から出射した赤外線を、前記撮影位置を撮影するカメラで撮影する工程と、
前記カメラで得られた撮影画像上で、無欠陥部分と欠陥部分の明るさの相違から前記多結晶ウエハ内の欠陥を検出する工程と、を有する多結晶ウエハの検査方法。
(3) 前記撮影位置は、前記照射位置の設定される前記多結晶ウエハの面と同一の面に設定されることを特徴とする(1)の多結晶ウエハの検査方法。
(4) 前記光源は単一の光源であり、
前記光源の光軸は、前記照射位置から前記撮影位置側に延びるように、前記多結晶ウエハの表面に対して傾斜していることを特徴とする(1)~(3)のいずれかの多結晶ウエハの検査方法。
(5) 前記光源は、前記撮影位置に対して略対称に配置された複数の光源であり、
各々の前記光源の前記光軸は、各々の前記照射位置から前記撮影位置側に延びるように、前記多結晶ウエハの表面に対して同一の傾斜角で傾斜していることを特徴とする(1)~(3)のいずれかの多結晶ウエハの検査方法。
(6) 前記光源はライン型の光源であり、
前記カメラは、ラインセンサー型のカメラであり、
前記カメラは、シリンドリカル型のレンズで集光された赤外線を検出することを特徴とする(1)~(5)のいずれかの多結晶ウエハの検査方法。
(7) 前記光源は、リング型の照射領域を形成するリング型の光源であり、
前記カメラは、リング型の前記照射領域の内側を撮影領域とする、エリアセンサ型のカメラであり、
前記カメラは、拡大用のレンズで集光された前記赤外線を検出することを特徴とする(1)~(5)のいずれかの多結晶ウエハの検査方法。
具体的には、多結晶ウエハに欠陥が存在しない場合は、赤外線が多結晶ウエハ内で反射や屈折を繰り返すことによって、撮影位置に到達した赤外線の強度は略均一になって結晶模様の影響をほとんど受けなくなるため、カメラで得られた撮影画像は多結晶ウエハの結晶模様を反映しない均一な明るさの画像となる。
ところが、多結晶ウエハ内に欠陥が存在する場合は、欠陥で赤外線が乱反射し、撮影位置に到達した赤外線の強度が不均一となる。したがって、カメラで得られる撮影画像上には、欠陥は、欠陥が存在しない場合と比べて明るさの異なる領域として現れる。このように、本発明によれば、カメラにより得られた撮影画像は、多結晶ウエハの結晶の方向、結晶の境界やその輪郭による結晶模様の影響をほとんど受けることがなく、欠陥のみが欠陥のない部分と明るさが異なるので、多結晶ウエハ内の欠陥を確実に検出できる。
まず、多結晶ウエハ1の下面側に配置されたライン型の光源2から、多結晶ウエハ1の搬送方向Aと直交する方向に延在するライン状の赤外線3を、多結晶ウエハ1のライン状の照射位置P1に向けて照射する。このとき、照射位置P1を通る光源2の光軸が多結晶ウエハ1の表面の法線n1に対して傾くように光源2が配置されている。具体的には、光源2の光軸は、光源2から出射された赤外線3が照射位置P1側から撮影位置P2側に延びるように、法線n1に対して傾斜角αを為している。
図4Aにおいて、無欠陥領域を通過した赤外線3が形成する均一な明るさの背景画像に、欠陥4を通過した赤外線3による暗い影付きの明るい画像が形成される。したがって、均一な明るさの背景画像から明るさの異なる領域を検出することで、欠陥4を簡単かつ確実に認識できる。なお、図4Aは、厚み0.2mmの多結晶ウエハ1を欠陥検出対象とし、所定距離D=2mm、傾斜角α=20°に設定して得られた撮影画像である。
なお、本発明はシリコンウエハに限らず、その他の多結晶構造のウエハにも利用できる。
本出願は、2009年5月29日出願の日本特許出願(特願2009-130725)、及び2009年8月11日出願の日本特許出願(特願2009-186304)に基づくものであり、その内容はここに参照として取り込まれる。
Claims (7)
- 光軸が多結晶ウエハ上の照射位置を通過するように配置された光源から、赤外線を前記照射位置に向けて照射する工程と、
前記照射位置から入射して前記多結晶ウエハ内部の結晶粒界及び欠陥で屈折及び反射を繰り返して、前記照射位置から前記多結晶ウエハの面方向に所定距離離間した前記多結晶ウエハ上の撮影位置から出射した赤外線を、前記撮影位置を撮影するカメラで撮影する工程と、
前記カメラで得られた撮影画像上で、無欠陥部分と欠陥部分の明るさの相違から前記多結晶ウエハ内の欠陥を検出する工程と、を有する多結晶ウエハの検査方法。 - 前記撮影位置は、前記照射位置の設定される前記多結晶ウエハの面の反対側の面に設定されることを特徴とする請求項1記載の多結晶ウエハの検査方法。
- 前記撮影位置は、前記照射位置の設定される前記多結晶ウエハの面と同一の面に設定されることを特徴とする請求項1記載の多結晶ウエハの検査方法。
- 前記光源は単一の光源であり、
前記光源の光軸は、前記照射位置から前記撮影位置側に延びるように、前記多結晶ウエハの表面に対して傾斜していることを特徴とする請求項1から請求項3のいずれか一項に記載の多結晶ウエハの検査方法。 - 前記光源は、前記撮影位置に対して略対称に配置された複数の光源であり、
各々の前記光源の前記光軸は、各々の前記照射位置から前記撮影位置側に延びるように、前記多結晶ウエハの表面に対して同一の傾斜角で傾斜していることを特徴とする請求項1から請求項3のいずれか一項に記載の多結晶ウエハの検査方法。 - 前記光源はライン型の光源であり、
前記カメラは、ラインセンサー型のカメラであり、
前記カメラは、シリンドリカル型のレンズで集光された赤外線を検出することを特徴とする請求項1から請求項5のいずれか一項に記載の多結晶ウエハの検査方法。 - 前記光源は、リング型の照射領域を形成するリング型の光源であり、
前記カメラは、リング型の前記照射領域の内側を撮影領域とする、エリアセンサ型のカメラであり、
前記カメラは、拡大用のレンズで集光された前記赤外線を検出することを特徴とする請求項1から請求項5のいずれか一項に記載の多結晶ウエハの検査方法。
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