TWI460812B - Adsorption platform - Google Patents

Adsorption platform Download PDF

Info

Publication number
TWI460812B
TWI460812B TW100126563A TW100126563A TWI460812B TW I460812 B TWI460812 B TW I460812B TW 100126563 A TW100126563 A TW 100126563A TW 100126563 A TW100126563 A TW 100126563A TW I460812 B TWI460812 B TW I460812B
Authority
TW
Taiwan
Prior art keywords
stage
substrate
adsorption
hollow space
pores
Prior art date
Application number
TW100126563A
Other languages
English (en)
Other versions
TW201222708A (en
Inventor
Yasutomo Okajima
Original Assignee
Mitsuboshi Diamond Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Ind Co Ltd filed Critical Mitsuboshi Diamond Ind Co Ltd
Publication of TW201222708A publication Critical patent/TW201222708A/zh
Application granted granted Critical
Publication of TWI460812B publication Critical patent/TWI460812B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Description

吸附台
本發明係關於一種藉由真空吸附而將玻璃基板、矽晶圓、化合物半導體、陶瓷等平板狀之基板固定之吸附台,更詳細而言,本發明係關於一種吸附面由多孔質材料形成之吸附台。
藉由真空吸附而將基板固定之吸附台係利用於各種領域之基板加工裝置中。例如,於在大型之玻璃基板或半導體基板(所謂之母基板)上對多個電子零件進行圖案形成,並將其按各個電子零件分斷之基板加工裝置中,藉由使用刀輪等之機械刻劃或使用雷射光束之雷射刻劃,而進行於基板上形成劃線之加工。此時,為於所需位置上形成劃線,而對基板進行定位並利用吸附台將基板固定。
於用於基板加工裝置之吸附台,已知有於金屬板形成多個吸附用之貫通孔並將其作為吸附面之類型的吸附台、及將陶瓷等多孔質板作為吸附面之類型之吸附台(參照專利文獻1)。
圖5係表示於金屬板形成多個吸附用之貫通孔之類型的吸附台之一例之剖面圖。吸附台50具備於上面51a(成為吸附面之載台表面)載置基板之金屬製之載台51,與於其周緣支承載台51之底座52。載台51於載置有基板之區域中,呈格子狀形成多個貫通孔53。於緊鄰載台51之下方,形成中空空間54,將載台51之背面51b設為面向中空空間54。而且,各貫通孔53貫通至中空空間54。
底座52之中心安裝有插塞55,插塞55中形成通至中空空間54之流路55a。插塞55進而經由外部流路56連接於真空泵57、氣源58,藉由閥59、60之開閉而可將中空空間54設為減壓狀態,或者使其返回至大氣壓狀態。
吸附台50中,藉由將基板G載置於載台51上而阻塞所有貫通孔53時發揮較強之吸附力,可穩定地固定基板G。例如,利用真空泵57排氣時若所有貫通孔53均被基板阻塞,利用設置於插塞55附近之壓力感測器61進行監測,中空空間54之壓力減壓至-60 KPa左右之壓力,若除去基板而開放所有貫通孔53則中空空間54成為-5 KPa左右之壓力。因此,只要以阻塞所有貫通孔53之方式載置基板,則該等2個狀態之間之壓力差(差壓約55 KPa左右)成為經由各貫通孔53而發揮吸附力。再者,若基板之位置偏移即便1個貫通孔53成為未阻塞之狀態,則自該處產生較大之洩漏,吸附力一下子變弱。
另一方面,圖6係吸附面使用陶瓷製之多孔質板之類型之吸附台的一例之剖面圖。
於吸附台70中,使用由多孔質板所構成之載台71代替圖5中之金屬製載台51。多孔質板中含有多個細細孔,且於上面71a與下面71b之間具有透氣性。再者,除載台71以外之各部分係與圖5相同之構成,故標註相同符號並省略部分說明。
於吸附台70中,若使真空泵57運轉則中空空間54變成減壓狀態,經由多孔質板整個面之細細孔而產生洩漏,成為可於載台71之大致整個面吸附。因此,不論將基板G載置於載台71之上面71a之何處均吸附。然而,於多孔質板中通過細細孔之氣體之流動之阻力較大,故無法期望較大之吸附力。
例如,利用真空泵57排氣時若上面71a之全體(即吸附面全體)完全被基板G阻塞,雖然中空空間54以壓力感測器61而減壓至-60 KPa左右之壓力為止,但於除去基板G而開放上面71a全體之情形時,細細孔之洩漏量較小,變成-55 KPa左右之減壓狀態。即,多孔質板71係將較小之壓力差(差壓5 KPa左右)用作吸附力。
[先前技術文獻] [專利文獻]
專利文獻1:日本特開2000-332087號公報
如上述般,前者之金屬製之吸附台50具有能獲得較強之吸附力,相反地若一部分之貫通孔53未阻塞則吸附力急遽變弱之性質。另一方面,後者之多孔質板之吸附台70雖無法獲得如前者之經由貫通孔53所得之較強吸附力,但因可於載台71與基板G接觸之整個面進行吸附,故吸附力與基板面積成比例地變大。因此,只要成為某種程度之大小之基板面積,則可於載台71上之任意位置固定基板。因此,兩者之吸附台係活用各自之特徵,對應用途而分別使用。
然而,於使用吸附台之情形時,存在必須確認吸附力是否足夠充分之情形。例如,於在母基板上形成劃線之基板加工裝置中,係於基板定位後利用吸附台將其固定。固定後必須確認是否可利用閾值以上之吸附力(將閾值稱為基板保持力)吸附,以便使基板位置不偏移。
於此情形時,若為前者之金屬製吸附台,藉由使用圖5中之壓力感測器61作為真空開關而可確認吸附狀態。即,當阻塞所有貫通孔53時之中空空間54之壓力狀態(-60 KPa)、及開放貫通孔53時之壓力狀態(-5 KPa)下,因壓力差足夠大,故藉由將該等之中間之壓力值設定為閾值,而可確實地確認是否為已載置基板之狀態。
進而,藉由將該閾值設定為較阻塞所有之貫通孔53時之壓力狀態略小之值(例如-50 KPa),而可判斷是所有貫通孔53完全阻塞之狀態,還是自任意貫通孔53產生洩漏之不完全之狀態,藉此亦可判斷基板是否載置於準確之位置。
然而,於使用後者之多孔質板之吸附台之情形時,即便使用圖6中之壓力感測器61作為真空開關,於載置有基板時之中空空間之壓力狀態(-60 KPa)、及未載置基板時之壓力狀態(-55 KPa)下,因無法取得足夠大之壓力差(差壓),故即便將該等之中間之壓力值(例如-57.5 KPa)設定為閾值,誤動作亦較多,難以準確地確認載置狀態。
因此,本發明之目的在於提供一種使用多孔質板之吸附台,其確實地確認是否可獲得固定基板所需之吸附力。
為解決上述問題,於本發明中係採用如下之技術手段。即,本發明之吸附台具備:台本體,其係由以多孔質板形成且載置基板之載台、與支承載台之周緣部分之底座構成,且以內部形成中空空間並且載台之背面面向中空空間的方式構成;真空排氣機構,其對中空空間進行減壓;及壓力感測器,其檢測中空空間之壓力。而且,載台上載置基板之位置,形成貫通多孔質板並到達中空空間之細孔。
根據本發明,若於載台上未載置基板之狀態(開放細孔之狀態)下對中空空間進行真空排氣,則即使為以多孔質板形成之載台,亦經由細孔產生較大之洩漏,中空空間成為難以減壓之狀態。另一方面,若以阻塞細孔之方式將基板或置於載台上,並對中空空間進行真空排氣,則自細孔之較大之洩漏消失,多孔質板之細細孔僅產生微量之洩漏,中空空間成為強減壓之狀態。
因此,於利用基板阻塞細孔之狀態與未阻塞細孔之狀態下,可產生較大之壓力差,只要利用壓力感測器檢測中空空間之壓力,則可確實地確認是載置有基板之狀態、還是未載置之狀態。
此處,較佳為形成於多孔質板之細孔之數為1個。只要將細孔設為僅為1個,藉由於該位置載置基板而阻塞、或開放細孔,可使洩漏量發生較大變化,從而可準確地確認是否為載置有基板之狀態。
細孔之孔徑較佳為0.5mm~1mm。藉此,可利用阻塞細孔之基板之有無而產生檢測基板所需之差壓,又,因細孔之徑足夠小,故而當載置有基板時可確實地阻塞,從而可確實地抑制經由細孔之不必要之洩漏產生。
進而,亦可附設以阻塞細孔之位置之方式誘導載置於載台之基板之定位機構。藉此,即便於所載置之基板之大小每次均不同之情形時,藉由使用定位機構誘導基板之載置位置,亦可確實地阻塞細孔。
又,亦可於載台之中央形成細孔。藉此,藉由於基板中央載置基板,可確實地阻塞細孔。例如,只要於載台中央標註標記,參考標記而載置基板便可確實地阻塞細孔。
以下,針對本發明之吸附台之詳細內容,根據表示其實施形態之圖式而進行詳細說明。
圖1係表示本發明之吸附台之一實施例之剖面圖,圖2係其俯視圖。
吸附台10具備台本體13,該台本體13係由上面11a(載台表面)載置有基板之方形之載台11、及對於載台11以於其周緣抵接之方式進行支承的底座12構成。本實施形態中,係由載台11之周緣之下面(載台背面11b)被底座12支承,但亦可由載台11之側面被底座支承。任意情形時只要將接觸面密著不會產生洩漏便可。
載台11只要為多孔質材料即可,例如以陶瓷製之多孔質板形成。於載台11之除周緣以外之中央部分之正下方,以於底座12設置凹部之方式形成中空空間14,將載台11之背面11b以面向中空空間14之方式而設置。中空空間14既可於載台11側形成凹部,亦可於載台11與底座12之兩側形成凹部。
底座12之中心安裝有插塞15,且於插塞15中形成通達中空空間14之流路15a。插塞15進而經由外部流路16而連接於真空泵17、氣源18,而可藉由開啟閥19使中空空間14變成減壓狀態、或者可藉由關閉閥30而使其返回至大氣壓狀態。
於插塞15之附近之外部流路16設置有壓力感測器31,其可監測中空空間14之壓力,並且可作為真空開關而使用,即藉由預先設定閾值,而進行是否可確保基板保持力之判定。
又,於方形之載台11之1個角上,設置有以相對於二邊而較上面11a更向上側突出之方式安裝之定位構件32,於將方形之基板G載置於載台上時,藉由使二邊抵接於定位構件32,而將其誘導至固定位置。
又,於安裝有定位構件32之角之附近,形成1個貫通載台11之細孔33。將該細孔33之孔徑設為0.5mm~1mm左右。使基板G抵接並載置於定位構件32時,因必須藉由基板G確實地阻塞細孔33,故考慮有載置可能性之基板中,載置最小之基板之狀況,而於即便於此情形時亦可確實地阻塞之位置上設置細孔33。具體而言,例如若所使用之最小基板為5 cm見方,則於與設置有定位構件32之部位相距5 cm見方內形成細孔33。
其次,對該吸附台10之使用動作進行說明。於使用前,為確認吸附力,使真空泵17運轉並且阻塞載台11之整個面,當不產生自多孔質面之洩漏時,測量中空空間14達到之壓力P1。此時,設為減壓至-60 KPa為止。繼而,開放載台11之整個面,測量利用多孔質面及細孔33產生洩漏時中空空間14達到之壓力P2。此時,自除細孔33以外之多孔質面之洩漏量雖小,亦加入至自細孔33之洩漏,故達到壓力變成-10 KPa左右(於無細孔33之多孔質板之情形時變成-55 KPa左右)。
進行以上之測量後,設定使用壓力感測器31作為真空開關時之閾值Ps。具體而言,將壓力P1、P2之間之壓力值設定為閾值。於此處,係設定-30 KPa作為閾值壓力。再者,於要求儘可能大之基板保持力之情形時,將閾值Ps設為接近於P1。
進行以上之設定後,將基板載置於載台11上時於真空開關之運轉狀態下可確認基板之有無。
本實施形態中,係使用壓力感測器31作為真空開關,但亦可由操作者讀取壓力感測器31之壓力值,而確認基板之有無、洩漏之有無。
圖3係作為本發明之另一實施形態之吸附台之剖面圖,圖4係其俯視圖。藉由對與圖1、圖2相同之構成標註相同符號,而省略部分說明。於該吸附台40中,係於載台41之中央形成細孔35。本實施形態中,可無關於所載置之基板之大小或形狀,而確認載台41之中央是否載置有基板。再者,若於載台41之上面41a描繪表示細孔35之位置之如目標標記之圖案,則將基板載置於細孔35之上就變得容易。
以上,對本發明之代表性之實施例進行了說明,但本發明並不限定於上述實施形態,於達成其目的且不脫離申請專利範圍之範圍內可進行適當地修正、變更。
[產業上之可利用性]
本發明之吸附台可作為基板加工裝置中固定基板之載台而使用。
G...基板
10、40...吸附台
11...載台
12...底座
13...台本體
14...中空空間
15...插塞
16...外部流路
17...真空泵
18...氣源
31...壓力感測器
32...定位構件
33、35...細孔
圖1係表示作為本發明之一實施形態的吸附台之剖面圖。
圖2係圖1中之吸附台之俯視圖。
圖3係作為本發明之另一實施形態之吸附台之剖面圖。
圖4係圖3中之吸附台之俯視圖。
圖5係表示習知之金屬製吸附台之一例之圖。
圖6係表示習知之使用多孔質板之吸附台之一例的圖。
G...基板
P、31...壓力感測器
10...吸附台
11...載台
11a...上面(載台表面)
11b...下面(載台背面)
12...底座
13...台本體
14...中空空間
15...插塞
15a...流路
16...外部流路
17...真空泵
18...氣源
19、30...閥
32...定位構件
33...細孔

Claims (4)

  1. 一種吸附台,其特徵在於具備:台本體,其係由以包含多數個微細孔之多孔質板形成且載置基板之載台、與支承該載台之周緣部分之底座構成,且以內部形成中空空間並且該載台之背面面向該中空空間的方式構成;真空排氣機構,其對該中空空間進行減壓;及壓力感測器,其檢測該中空空間之壓力;於該載台上之一部分區域且載置該基板之位置,有別於包含於該多孔質板之微細孔,形成貫通多孔質板並到達中空空間之細孔,該細孔之孔徑為0.5mm~1mm。
  2. 如申請專利範圍第1項之吸附台,其中,該細孔之數為1個。
  3. 如申請專利範圍第2項之吸附台,其中,附設有誘導載置於該載台之基板以阻塞該細孔之位置的定位機構。
  4. 如申請專利範圍第2項之吸附台,其中,於該載台之中央形成該細孔。
TW100126563A 2010-10-05 2011-07-27 Adsorption platform TWI460812B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010226091A JP5291687B2 (ja) 2010-10-05 2010-10-05 吸着テーブル

Publications (2)

Publication Number Publication Date
TW201222708A TW201222708A (en) 2012-06-01
TWI460812B true TWI460812B (zh) 2014-11-11

Family

ID=46009184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100126563A TWI460812B (zh) 2010-10-05 2011-07-27 Adsorption platform

Country Status (4)

Country Link
JP (1) JP5291687B2 (zh)
KR (1) KR101313016B1 (zh)
CN (1) CN102446800B (zh)
TW (1) TWI460812B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014033057A (ja) * 2012-08-02 2014-02-20 Murata Mfg Co Ltd 基板吸着装置
KR101422355B1 (ko) * 2012-11-21 2014-07-22 세메스 주식회사 버퍼 스테이지 및 이를 포함하는 다이 본딩 장치
JP6138503B2 (ja) * 2013-02-04 2017-05-31 株式会社ディスコ チャックテーブル
CN103264303B (zh) * 2013-05-16 2015-04-29 大连理工大学 低刚度薄壁腔体零件气动式精密装夹装置
JP2016078216A (ja) * 2014-10-22 2016-05-16 株式会社ディスコ バイト切削装置
CN106019655A (zh) * 2016-07-26 2016-10-12 武汉华星光电技术有限公司 机台
CN106353902B (zh) * 2016-11-08 2019-03-22 武汉华星光电技术有限公司 一种液晶面板移载装置及液晶面板切割系统
CN107608097A (zh) * 2017-09-16 2018-01-19 合肥惠科金扬科技有限公司 一种面板目检喷气式治具的面板吸附台
JP2020066112A (ja) * 2018-10-26 2020-04-30 株式会社ディスコ チャックテーブル
JP7186356B2 (ja) * 2019-01-16 2022-12-09 株式会社東京精密 ウェーハチャック及びウェーハ保持装置
JP7482825B2 (ja) * 2021-04-19 2024-05-14 三菱電機株式会社 検査装置、半導体基板の検査方法、半導体基板の製造方法、および半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01170530U (zh) * 1988-05-17 1989-12-01
JPH07214442A (ja) * 1994-01-28 1995-08-15 Roland D G Kk バキューム・テーブル
TW200520139A (en) * 2003-11-12 2005-06-16 Nitto Denko Corp Method and apparatus for joining adhesive tape to back face of semiconductor wafer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54169986U (zh) * 1978-05-22 1979-11-30
JP2000332087A (ja) * 1999-05-25 2000-11-30 Sony Corp 基板吸着装置
JP2004154920A (ja) * 2002-11-08 2004-06-03 Central Glass Co Ltd ガラス基板を吸着保持して研磨するための吸着パッド
JP4851282B2 (ja) * 2006-09-21 2012-01-11 株式会社ディスコ 切削装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01170530U (zh) * 1988-05-17 1989-12-01
JPH07214442A (ja) * 1994-01-28 1995-08-15 Roland D G Kk バキューム・テーブル
TW200520139A (en) * 2003-11-12 2005-06-16 Nitto Denko Corp Method and apparatus for joining adhesive tape to back face of semiconductor wafer

Also Published As

Publication number Publication date
TW201222708A (en) 2012-06-01
CN102446800B (zh) 2015-04-22
JP5291687B2 (ja) 2013-09-18
KR101313016B1 (ko) 2013-10-01
JP2012076203A (ja) 2012-04-19
CN102446800A (zh) 2012-05-09
KR20120035852A (ko) 2012-04-16

Similar Documents

Publication Publication Date Title
TWI460812B (zh) Adsorption platform
TWI449120B (zh) Adsorption platform
KR20220133838A (ko) 접합 장치, 접합 시스템, 접합 방법 및 컴퓨터 기억 매체
TW201625969A (zh) 晶圓檢查裝置之檢查用壓力設定值決定方法
JP2016127086A (ja) 基板吸着補助部材及び基板搬送装置
TWI583975B (zh) Wafer inspection interface and wafer inspection device
TWI648815B (zh) 夾具、基板保持裝置、圖案形成裝置、及物品之製造方法
JP2014116433A (ja) 基板保持部材
JP6706182B2 (ja) 基板保持装置
JP4737392B2 (ja) 基板検査装置
KR20190132929A (ko) 기판 보유 지지 장치, 기판 연마 장치, 탄성 부재 및 기판 보유 지지 장치의 제조 방법
WO2011065021A1 (ja) 真空チャック
JP3817613B2 (ja) 真空吸着装置
JP4643520B2 (ja) 検査方法および検査装置
JP2018067602A (ja) プローバ及びプローブ検査方法
TW202209478A (zh) 基板處理裝置及基板處理方法
JP2008286886A (ja) 基板貼り合わせ装置及び基板貼り合わせ方法
JP2007229889A (ja) チャックテーブルの検査方法
JP2014241357A (ja) 基板保持装置、及び光学装置、及び基板保持方法
JP5316172B2 (ja) ウェハ吸引パッド及びそれを備えたプリアライナ
JP2006269989A (ja) 基板保持具
WO2013168360A1 (ja) 半導体ウエーハの評価方法および半導体ウエーハの評価装置
JP7203918B2 (ja) 接合装置、接合システム、接合方法及びコンピュータ記憶媒体
JP2006024837A (ja) 保持機構およびそれを用いた保持装置
KR100614791B1 (ko) 진공도 측정 장치 및 이를 이용한 진공도 측정 방법